• Journal of Powder Materials
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• v.28 no.1
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• pp.44-50
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• 2021

Zinc selenide (ZnSe) nanoparticles were synthesized in aqueous solution using glutathione (GSH) as a ligand. The influence of the ligand content, reaction temperature, and hydroxyl ion concentration (pH) on the fabrication of the ZnSe particles was investigated. The optical properties of the synthesized ZnSe particles were characterized using various analytical techniques. The nanoparticles absorbed UV-vis light in the range of 350-400 nm, which is shorter than the absorption wavelength of bulk ZnSe particles (460 nm). The lowest ligand concentration for achieving good light absorption and emission properties was 0.6 mmol. The reaction temperature had an impact on the emission properties; photoluminescence spectroscopic analysis showed that the photo-discharge characteristics were greatly enhanced at high temperatures. These discharge characteristics were also affected by the hydroxyl ion concentration in solution; at pH 13, sound emission characteristics were observed, even at a low temperature of 25℃. The manufactured nanoparticles showed excellent light absorption and emission properties, suggesting the possibility of fabricating ZnSe QDs in aqueous solutions at low temperatures.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.125-129
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• 2021

We investigated the electronic property and atomic structure for chalcopyrite (CH) Al_xGa_1-xAs semiconductor by using first-principles FPLMTO method. The CH-Al_xGa_1-xAs exhibits a p-type semiconductor with a direct band-gap. For low Al concentration unoccupied hole-carriers are induced, but for high Al concentration it is formed a localized bonding or anti-bonding state below Fermi level. The hybridization of Al(3s)-Ga(4s, or 4p) is larger than that of Al(3s)-As(4s, or 4p). And the Al film on As-terminated surface, Al/AsGa(001), is more energetically favorable one than that on Ga-terminated (001) surface. Consequently, the band-gap of CH-Al_xGa_1-xAs system increases exponentially with increasing Al concentration. The change of lattice parameter is shown two different configurations with increasing Al concentration. The calculated lattice parameters for CH-Al_xGa_1-xAs system are compared to the experimental ones of zinc-blend GaAs and AlAs.

• Journal of Korean Society of Environmental Engineers
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• v.35 no.9
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• pp.636-642
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• 2013

In order to overcome drawbacks (i.e., filtration and recovery) of conventional powder type photocatalysts, nano-ZnO/Laponite/PVA (ZLP) photocatalyzed adsorption balls were developed by using in situ mixing of nanoscale ZnO as a photocatalyst, and Laponite as both adsorbent and supporting media in deionized water, followed by the poly vinyl alcohol polymerization with boric acid. The optimum mixing ratio of nano-ZnO:Laponite:PVA:deionized water was found to be 3:1:1:16 (by weight), and the mesh and film produced by PVA polymerization with boric acid might inhibit both swelling of Laponite and detachment of nanoscale ZnO from ZLP balls. Drying ZLP balls with microwave (600 watt) was found to produce ZLP balls with stable structure in water, and various sizes (55~500 ${\mu}m$) of pore were found to be distributed based on SEM and TEM results. In the initial period of reaction (i. e., 40 min), adsorption through ionic interaction between methylene blue and Laponite was the main removal mechanism. After the saturation of methylene blue to available adsorption sites for Laponite, the photocatalytic degradation of methylene blue occurred. The effective removal of methylene blue was attributed to adsorption and photocatalytic degradation. Based on the results from this study, synthesized ZLP photocatalyzed adsorption balls were expected to remove recalcitrant organic compounds effectively through both adsorption and photocatalytic degradation, and the risks of environmental receptors caused by detachment of nanoscale photocatalysts can be reduced.

• Journal of the Korean Chemical Society
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• v.61 no.4
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• pp.179-184
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• 2017

In this paper, a $ZnO/SiO_2$ nano-composite was prepared by a simple chemical method at room temperature. For the synthesis of ZnO nanoparticles (NPs), a sonochemical method was used, and $SiO_2$ NPs were prepared by precipitation method. The formation of $ZnO/SiO_2$ NCs was characterized by X-ray diffractometer (XRD) and confirmed by field-emission scanning electron microscopy (FE-SEM) and Fourier transform infra-red spectroscopy(FT-IR). The photocatalytic properties of $ZnO/SiO_2$ NCs formed at different concentrations of $SiO_2$ were evaluated by rhodamine-B dye. It was confirmed that increasing $SiO_2$ concentration resulted in an increase in the photocatalytic property. In addition, the antibacterial activity of $ZnO/SiO_2$ NCs was conducted against Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus). As a result, the antibacterial activities of E.coli and S. aureus were increased in the presence of thick SiO NPs layer.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.75-75
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• 2018

Commercially pure titanium (CP-Ti) and Ti-6Al-4V alloys have been widely used in implant materials such as dental and orthopedic implants due to their corrosion resistance, biocompatibility, and good mechanical properties. However, surface modification of titanium and titanium alloys is necessary to improve osseointegration between implant surface and bone. Especially, when titanium oxide nanotubes are formed on the surface of titanium alloy, cell adhesion is greatly improved. In addition, plasma electrolytic oxide (PEO) coatings have a good safety for osseointegration and can easily and quickly form coatings of uniform thickness with various pore sizes. Recently, the effects of bone element such as magnesium, zinc, strontium, silicon, and manganese for bone regeneration are researching in dental implant field. The purpose of this study was researched on the surface morphology of PEO-treated Ti-6Al-4V alloy after anodic titanium oxide treatmentusing various instruments. Ti-6Al-4V ELI disks were used as specimens for nanotube formation and PEO-treatment. The solution for the nanotube formation experiment was 1 M $H_3PO_4$ + 0.8 wt. % NaF electrolyte was used. The applied potential was 30V for 1 hours. The PEO treatment was performed after removing the nanotubes by ultrasonics for 10 minutes. The PEO treatment after removal of the nanotubes was carried out in the $Ca(CH_3)_2{\cdot}H_2O+(CH_3COO)_2Mg{\cdot}4H_2O+Mn(CH_3COO)_2{\cdot}4H_2O+Zn(CH_3CO_2)_2Zn{\cdot}2H_2O+Sr(CH_2COO)_2{\cdot}0.5H_2O+C_3H_7CaO_6P$ and $Na_2SiO_3{\cdot}9H_2O$ electrolytes. And the PEO-treatment time and potential were 3 minutes at 280V. The morphology changes of the coatings on Ti-6Al-4V alloy surface were observed using FE-SEM, EDS, XRD, AFM, and scratch tester. The morphology of PEO-treated surface in 5 ion coating solution after nanotube removal showed formation or nano-sized mesh and micro-sized pores.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.30 no.2
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• pp.173-180
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• 2004

Nano sized ZnO particle as 20-30nm applies for material, pigments, rubber additives, gas sensors, varistors, fluorescent substance as well as new material such as photo-catalyst, sensitizer, fluorescent material. ZnO with a particle size in the range 20-30nm has provided to be an excellent UV blocking material in the cosmetics industry, which can be used in sunscreen product to enhance the sun protection factor and natural makeup effect. But pure ZnO particles application limits for getting worse wearing feeling. We make high-functional inorganic-composite that coated with nano-ZnO on the plate-type particle such as sericite, boron nitride and bismuthoxychloride. In this experiment, we synthesized composite powder using hydrothermal precipitation method. The starting material was ZnCl$_2$ Precipitation materials were used hexamethylenetetramine(HMT) and urea. We make an experiment with changing as synthesis factors that are concentrations of starting material, precipitation materials, nuclear formation material, reaction time, and reaction temperature. We analyzed composite powder's shape, crystallization and UV-blocking ability with FE-SEM, XRD, FT-IR, TGA-DTA, In vitro SPF test. The user test was conducted by product's formulator. In the results of this study, nanometer sized ZnD was coated regardless of the type of plate-powder at fixed condition range. When the coated plate-powders were applied in pressed powder product, the glaze of powder itself decreased, but natural make-up effect, spreadability, and adhesionability were increased.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.4
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• pp.127-134
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• 2015

Aluminum nitride (AlN) single crystals have attracted much attention for a next-generation semiconductor application because of wide bandgap (6.2 eV), high thermal conductivity ($285W/m{\cdot}K$), high electrical resistivity (${\geq}10^{14}{\Omega}{\cdot}cm$), and high mechanical strength. The bulk AlN single crystals or thin film templates have been mainly grown by PVT (sublimation) method, flux method, solution growth method, and hydride vapor phase epitaxy (HVPE) method. Since AlN suffers difficulty in commercialization due to the defects that occur during single crystal growth, crystalline quality improvement via defects analyses is necessary. Etch pit density (EPD) analysis showed that the growth misorientations and the defects in the AlN surface exist. Transmission electron microscopy (TEM) and electron back-scattered diffraction (EBSD) analyses were employed to investigate the overall crystalline quality and various kinds of defects. TEM studies show that the morphology of the AlN is clearly influenced by stacking fault, dislocation, second phase, etc. In addition EBSD analysis also showed that the zinc blende polymorph of AlN exists as a growth defects resulting in dislocation initiator.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.151-151
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• 2009

Recently, there has been increasing interest in amorphous oxide semiconductors to find alternative materials for an amorphous silicon or organic semiconductor layer as a channel in thin film transistors(TFTs) for transparent electronic devices owing to their high mobility and low photo-sensitivity. The fabriction of amorphous oxide-based TFTs at room temperature on plastic substrates is a key technology to realize transparent flexible electronics. Amorphous oxides allows for controllable conductivity, which permits it to be used both as a transparent semiconductor or conductor, and so to be used both as active and source/drain layers in TFTs. One of the materials that is being responsible for this revolution in the electronics is indium-zinc-tin oxide(IZTO). Since this is relatively new material, it is important to study the properties of room-temperature deposited IZTO thin films and exploration in a possible integration of the material in flexible TFT devices. In this research, we deposited IZTO thin films on polyethylene naphthalate substrate at room temperature by using magnetron sputtering system and investigated their properties. Furthermore, we revealed the fabrication and characteristics of top-gate-type transparent TFTs with IZTO layers, seen in Fig. 1. The experimental results show that by varying the oxygen flow rate during deposition, it can be prepared the IZTO thin films of two-types; One a conductive film that exhibits a resistivity of $2\times10^{-4}$ ohm${\cdot}$cm; the other, semiconductor film with a resistivity of 9 ohm${\cdot}$cm. The TFT devices with IZTO layers are optically transparent in visible region and operate in enhancement mode. The threshold voltage, field effect mobility, on-off current ratio, and sub-threshold slope of the TFT are -0.5 V, $7.2\;cm^2/Vs$, $\sim10^7$ and 0.2 V/decade, respectively. These results will contribute to applications of select TFT to transparent flexible electronics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.327-327
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• 2009

ZnO with a large band gap (~3.37 eV) and exciton binding energy (~60 meV), is suitable for optoelectronic applications such as ultraviolet (UV) light emitting diodes (LEDs) and detectors. However, the ZnO-based p-n homojunction is not readily available because it is difficult to fabricate reproducible p-type ZnO with high hall concentration and mobility. In order to solve this problem, there have been numerous attempts to develop p-n heterojunction LEDs with ZnO as the n-type layer. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducible availability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices. In particular, a number of ZnO films show UV band-edge emission with visible deep-level emission, which is originated from point defects such as oxygen vacancy, oxygen interstitial, zinc interstitial[1]. Thus, defect-related peak positions can be controlled by variation of growth or annealing conditions. In this work, the undoped ZnO film was grown on the p-GaN:Mg film using RF magnetron sputtering method. The undoped ZnO/p-GaN:Mg heterojunctions were annealed in a horizontal tube furnace. The annealing process was performed at $800^{\circ}C$ during 30 to 90 min in air ambient to observe the variation of the defect states in the ZnO film. Photoluminescence measurements were performed in order to confirm the deep-level position of the ZnO film. As a result, the deep-level emission showed orange-red color in the as-deposited film, while the defect-related peak positions of annealed films were shifted to greenish side as increasing annealing time. Furthermore, the electrical resistivity of the ZnO film was decreased after annealing process. The I-V characteristic of the LEDs showed nonlinear and rectifying behavior. The room-temperature electroluminescence (EL) was observed under forward bias. The EL showed a weak white and strong yellowish emission colors (~575 nm) in the undoped ZnO/p-GaN:Mg heterojunctions before and after annealing process, respectively.

• Journal of Environmental Health Sciences
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• v.36 no.6
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• pp.480-495
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• 2010

This study evaluated the distribution of the concentrations of nano-particles and heavy metals (08-Pb, Cr, Zn, As, Fe, 09-Pb, Cr, Zn, Cu, Ni, Mn) in Seoul, Chungnam A and Gwangyang from August to December, in 2008 5 times each in the Seoul area, 5 times in and Chungnam A area and from August to November, in 2009 14 times in the Chungnam A area, 8 times in the Gwangyang area. The examined results showed high concentration level from $PM_1$ through $PM_{0.1}$ in all three areas. These results were obtained the concentration of particles by diameter and statistically significant in Stage5 (1.0-0.56 ${\mu}m$) from the result of conducting Kruskal-Wallis H test (p < 0.05). In the case of the heavy metal concentration included in 0.10-0.056 ${\mu}m$, 0.056 ${\mu}m$, the lead concentration of Chungnam Asan area was 6.49 ng/$m^3$ and 9.93 ng/$m^3$, which was higher than 3.05 ng/$m^3$ and 4.22 ng/$m^3$ of Seoul, respectively. The concentration of iron in Seoul was 9.28 ng/$m^3$ and 13.24 ng/$m^3$, that appeared higher than 2.38 ng/$m^3$ and 3.23 ng/$m^3$ of Chungnam A area, respectively. The concentration level was similar to other metals except lead and iron in Chungnam A area and Seoul. From the concentration of heavy metal included in 0.10-0.056 ${\mu}m$, 0.056 ${\mu}m$, the lead concentration of Chungnam A area was 0.31 ng/$m^3$ and 0.12 ng/$m^3$ while Gwangyang was 0.28 ng/$m^3$, 0.06 ng/$m^3$. Thus Chungnam A area showed higher lead concentration than Gwangyang. The manganese concentration of Chungnam A area was 0.12 ng/$m^3$ and 0.03 ng/$m^3$ while Gwangyang was 0.21 ng/$m^3$ and 0.08 ng/$m^3$. Therefore, the concentration of Gwangyang appeared higher than that of Chunnam A area. These two metals showed statistically significant in 0.056 ${\mu}m$ (p < 0.05, p < 0.01). Among the concentration of heavy metal in all regions, the result demonstrated that the order of higher concentration is arsenic > iron > zinc > chrome > lead > nickel > copper > manganese.