• 제목/요약/키워드: Nano Resolution

검색결과 375건 처리시간 0.033초

Printing Technologies for the Gate and Source/Drain Electrodes of OTFTs

  • Lee, Myung-Won;Lee, Mi-Young;Song, Chung-Kun
    • Journal of Information Display
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    • 제10권3호
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    • pp.131-136
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    • 2009
  • This is a report on the fabrication of a flexible OTFT backplane for electrophoretic display (EPD) using a printing technology. A practical printing technology for a polycarbonate substrate was developed by combining the conventional screen and inkjet printing technologies with the wet etching and oxygen plasma processes. For the gate electrode, the screen printing technology with Ag ink was developed to define the minimum line width of ${\sim}5{\mu}m$ and the thickness of ${\sim}70nm$ with the resistivity of ${\sim}10^{-6}{\Omega}{\cdot}cm$, which are suitable for displays with SVGA resolution. For the source and drain (S/D) electrodes, PEDOT:PSS, whose conductivity was drastically enhanced to 450 S/cm by adding 10 wt% glycerol, was adopted. In addition, the modified PEDOT:PSS could be neatly confined in the specific S/D electrode area that had been pretreated with oxygen. The OTFTs that made use of the developed printing technology produced a mobility of ${\sim}0.13cm^2/Vs.ec$ and an on/off current ratio of ${\sim}10^6$, which are comparable to those using thermally evaporated Au for the S/D electrode.

이광자 흡수 광환원 공정을 이용한 마이크로 금속형상 제작의 정밀화에 관한 연구 (Improvement of Metallic Micro-Structure Precision Employing Two-photon Induced Photoreduction Process)

  • 손용;임태우;양동열;;이광섭
    • 대한기계학회논문집A
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    • 제32권9호
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    • pp.754-760
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    • 2008
  • A two-photon induced photoreduction process suggests a possibility for fabricating complicated metallic microstructures which can be applied to 3-D micro-circuits and optical devices, etc. The process employs the photoreduction of silver ions in a metallic solution which is composed of metallic salt ($AgNO_3$) and watersoluble polymer ((poly(4-styrenesulfonique acid) 18wt. % in $H_2O$, $(C_8H_8O_3S)_n$)). In this process, the improvement of the resolution and the uniformity of fabricated metallic structures are important issues. To address these problems, continuous forming window (CFW) is obtained from a parametric study on the conditions of laser power and scanning velocity and the direct seed generation (DSG) method is proposed. Silver nano particles are uniformly generated in a metallic solution through the DSG method, which enables the decrease of a laser power to trigger the photoreduction of silver ions as well as the increase of metal contents in a metallic solution. So the two-photon induced photoreduction property of a metallic solution is improved. Through this work, precise silver patterns are fabricated with a minimum line width of 400 nm.

광섬유 탐침의 반사를 이용한 파면 분석 근접장 주사 광간섭계 (Near field scanning optical interferometer using facet reflection of a tapered optical fiber)

  • 유장훈;임상엽;이현호;박승한
    • 한국광학회지
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    • 제15권3호
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    • pp.248-253
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    • 2004
  • 광섬유 탐침의 끝 단에서 반사하는 광을 이용하는 근접장 주사 광간섭계를 제안하고 제안한 근접장 주사 광간섭계를 이용하여 초점의 위치와 집광 초점면에서의 파면을 분석하였다. 파면의 분석은 광섬유 탐침의 끝 단에서 반사된 빛과 시료표면에서 반사된 빛을 간섭시키고, 탐침의 끝 단을 λ/4씩 위상천이 시키면서 4장의 간섭무늬를 얻은 후, 위상천이 알고리즘을 통하여 광학 수차를 구하는 방법을 이용하였다. 실험 결과 근접 주사시의 초점의 위치를 파장의 3분의 1 이하로 제어할 수 있음을 알 수 있었으며, 제안한 근접장 주사 광간섭계를 이용하여 구한 집광 초점면에서의 파면 수차 값이 트와이만-그린 간섭계를 이용하여 구한 파면 수차값과 잘 일치함을 확인할 수 있었다.

Energetics of adsorptions on fcc(111) and binary system; An application of the modified embedded atom method

  • Hy. Shin;J. Seo;Kim, J.S.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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    • pp.188-188
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    • 1999
  • The embedded atom method (EAM) of Daw and Baskes as a semiempirical method, has been successfully applied to the fcc or nearly filled d-band transition metals due to its computational feasibility and its methodological simplicity. Then Baskes modified the EAM (MEAM) to include directional bonding and applied it to metals, semiconductors, and diatomic gases, all of which have different types of bondings. Here, we present a detailed study of the energetics of adsorption on the fcc(111) surfaces and binary system within the framework of MEAM. In adsorption on fcc(111) surfaces, there are two energetically favored sites, so called, fcc site and hcp site, which may trigger stacking fault in the growth of films and might switch growth mode between 3D growth and layer by layer growth. We scrutinized the role of the hcp sites, which would offer dynamic growth pathways although the dynamics are not yet clear within the limited experimental resolution. Featuring these transient motions in the atomic level should contribute to the understanding the growth mechanisms on fcc(111) surface. And we also applied MEAM for initial stage energetics at the Cr coverage of sub- monolayer on W(110). We hope that recently observed extraordinary growth behavior at the Cr coverage of 0.7 monolayer, self- organized nano-scale lines, can be resolved in this MEAM binary system calculation.

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CMOS Compatible Fabrication Technique for Nano-Transistors by Conventional Optical Lithography

  • Horst, C.;Kallis, K.T.;Horstmann, J.T.;Fiedler, H.L.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제4권1호
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    • pp.41-44
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    • 2004
  • The trend of decreasing the minimal structure sizes in microelectronics is still being continued. Therefore in its roadmap the Semiconductor Industries Association predicts a printed minimum MOS-transistor channel length of 10 nm for the year 2018. Although the resolution of optical lithography still dramatically increases, there are known and proved solutions for structure sizes significantly below 50 nm up to now. In this work a new method for the fabrication of extremely small MOS-transistors with a channel length and width below 50 nm with low demands to the used lithography will be explained. It's a further development of our deposition and etchback technique which was used in earlier research to produce transistors with very small channel lengths down to 30 nm, with a scaling of the transistor's width. The used technique is proved in a first charge of MOS-transistors with a channel area of W=200 nm and L=80 nm. The full CMOS compatible technique is easily transferable to almost any other technology line and results in an excellent homogeneity and reproducibility of the generated structure size. The electrical characteristics of such small transistor will be analyzed and the ultimate limits of the technique will be discussed.

탄소나노튜브를 이용한 텅스텐 나노팁 전계방출기 제작 (Fabrication of a nano-sized conical-type tungsten field-emitter based on carbon nanotubes)

  • 박창균;김종필;김영광;박진석
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2008년도 제39회 하계학술대회
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    • pp.1220-1221
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    • 2008
  • Submicron-sized conical-type tungsten(W) field-emitters based on carbon nanotubes(CNTs) are fabricated with the configuration of CNTs/catalyst(Ni)/buffer(Al/Ni/TiN)/W-tip. This study focuses on elucidating how the Al/Ni/TiN stacked buffer layer affects the structural properties of CNTs and the electron-emission characteristics of CNT-emitters. Field-emission scanning electron microscopy(FESEM), high-resolution transmission electron microscopy(HRTEM), and x-ray photoelectron spectroscopy(XPS) are used to monitor the nanostructures, surface morphologies, chemical bonds of all the catalysts and CNTs grown. The crystalline structure of CNTs is also characterized by Raman spectroscopy. Furthermore, the measurement of field-emission characteristics for the field-emitters fabricated shows that the emitter using the Al/Ni/TiN stacked buffer reveals the excellent performances.

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티타늄 카바이드가 코팅된 탄소나노튜브 미세팁 이미터의 전계방출 특성 분석 (Characterization of microtip emitters based on titanium carbide-coated carbon nanotubes)

  • 김영광;김종필;박창균;박진석
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2008년도 제39회 하계학술대회
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    • pp.1218-1219
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    • 2008
  • Thin films (< 30 nm) of titanium carbide (TiC) are coated on carbon nanotubes (CNTs), which are directly grown on nano-sized ($\sim$ 500 nm in diameter) conical-type tungsten (W) tips, by employing an inductively coupled plasma-chemical vapor deposition (ICP-CVD) technique. Any modification in structural properties (such as length to diameter ratio, crystal quality, and growth behavior) of CNTs due to TiC-coating has been monitored by using high-resolution TEM, field-emission SEM, and Raman spectroscopy. Driving voltage for obtaining the same level of emission current in CNTs-emitter is significantly reduced by TiC-coating. It is also worthy of being noted that the degradation of emission current due to prolonged operation (up to 30 h) is remarkably suppressed by TiC-coating.

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Stearic acid 유기박막의 표면주고 Image (Surface Structure Image of Stearic acid Organic Thin Films)

  • 장헌;송진원;최영일;이경섭
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.562-564
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    • 2001
  • Transformation of molecular film occurs only usually in air-water interface, 2 dimensions domain's growth and crash are achieved. Organic matter thin film that accumulate molecular film in archaism board only that consist of growth of domain can understand correct special quality of accumulation film supplying information about fine structure and properties of matter of device observing information and so on that is surface forward player and optic enemy using AFM one of SPM application by nano electronics. The stable images are probably due to a strong interaction between the monolayer film and glass substrate. We are unable to obtain molecule resolution in images of the films but did see a marked contrast between images of the bare substrate and those with the network structure film deposited onto it. Formation that prevent when gas phase state and liquid phase state measure but Could know organic matter that molecules form equal and stable film when molecules were not distributed evenly. and accumulated in solid state only.

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LB박막의 이미지와 표면구조분석에 관한 연구 (A Study on the Image and Surface Structure analysisthat Manufacture by LB Method of LB Thin Film)

  • 송진원;이경섭;최영일;정헌상;구할본;김영근;이영길
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2002년도 하계학술대회 논문집 C
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    • pp.1618-1620
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    • 2002
  • Transformation of molecular film occurs only usually in air-water interface, 2 dimensions domain's growth and crash are achieved. Organic matter thin film that accumulate molecular film in archaism board only that consist of growth of domain can understand correct special quality of accumulation film supplying information about fine structure and properties of matter of device observing information and so on that is surface forward player and optic enemy using AFM one of SPM application by nano electronics. The stable images are probably due to a strong interaction between the monolayer film and glass substrate. We are unable to obtain molecule resolution in images of the films but did see a marked contrast between images of the bare substrate and those with the network structure film deposited onto it. Formation that prevent when gas phase state and liquid phase state measure but Could know organic matter that molecules form equal and stable film when molecules were not distributed evenly, and accumulated in solid state only.

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미세접촉프린팅공정을 이용한 플렉시블 디스플레이 유기박막구동소자 제작 (Fabrication of Organic Thin Film Transistor(OTFT) for Flexible Display by using Microcontact Printing Process)

  • 김광영;조정대;김동수;이제훈;이응숙
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2006년도 춘계학술대회 논문집
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    • pp.595-596
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    • 2006
  • The flexible organic thin film transistor (OTFT) array to use as a switching device for an organic light emitting diode (OLED) was designed and fabricated in the microcontact printing and low-temperature processes. The gate, source, and drain electrode patterns of OTFT were fabricated by microcontact printing which is high-resolution lithography technology using polydimethylsiloxane(PDMS) stamp. The OTFT array with dielectric layer and organic active semiconductor layers formed at room temperature or at a temperature tower than $40^{\circ}C$. The microcontact printing process using SAM(self-assembled monolayer) and PDMS stamp made it possible to fabricate OTFT arrays with channel lengths down to even nano size, and reduced the procedure by 10 steps compared with photolithography. Since the process was done in low temperature, there was no pattern transformation and bending problem appeared. It was possible to increase close packing of molecules by SAM, to improve electric field mobility, to decrease contact resistance, and to reduce threshold voltage by using a big dielecric.

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