• Journal of the Korean Ceramic Society
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• v.30 no.2
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• pp.85-92
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• 1993

Oxynitride glasses in Na-Ca-Si-O-N system were prepared by melting at 135$0^{\circ}C$ for 2 hours in N2 gas. The effects of Si/Na mole ratio and the various Si3N4 contents were investigated. Stable oxynitride glasses can be obtained up to 9wt.% Si3N4 content in case the Si/Na mole ratio was 2.12 and 1.62, but $\beta$-Si3N4 was precipitated at 9wt.% Si3N4 content in case the Si/Na mole rtio was 1.12. Density (p), chemical durability, hardness (Hv), and fracture toughness (KIC) increased with increasing Si3N4 content. In cae the Si/Na mole ratio was 1.12, the increment of properties was remarkable but hardness and fracture toughness did not increase no longer owing to precipitation of $\beta$-Si3N4.

• Journal of the Korean institute of surface engineering
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• v.49 no.5
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• pp.467-471
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• 2016

In order to investigate the Na gettering, PSG/$SiO_2$/Al-1%Si multilevel thin films were fabricated. DC magnetron sputter techniques and APCVD (atmosphere pressure chemical vapor deposition) were utilized for the deposition of Al-1%Si thin films and PSG/$SiO_2$ passivations, respectively. Heat treatment was carried out at $300^{\circ}C$ for 5 h in air. SIMS (secondary ion mass spectrometry) depth profiling and XPS (X-ray Photoelectron Spectroscopy) analysis were used to determine the distribution and binding energies of Na, Al, Si, O, P and other elements throughout the PSG/$SiO_2$/Al-1%Si multilevel thin films. Na peaks were mainly observed at the the PSG/$SiO_2$ interface and at the $SiO_2$/Al-1%Si interfaces. Na impurity gettering in PSG/$SiO_2$/Al-1%Si multilevel thin films is considered to be caused by a segregation type of gettering. The chemical state of Si and O elements in PSG passivation appears to be $SiO_2$.

• Journal of the Korean institute of surface engineering
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• v.51 no.2
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• pp.110-115
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• 2018

The Na low temperature gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ and $SiO_2/TEOS/SiO_2/Al-1%Si$ multilevel thin films was investigated using dynamic SIMS(secondary ion mass spectrometry) analysis. DC magnetron sputter, APCVD and PECVD techniques were utilized for the deposition of Al-1%Si thin films, $SiO_2/PSG/SiO_2$ and $SiO_2/TEOS/SiO_2$ passivations, respectively. Heat treatment was carried out at $300^{\circ}C$ for 5 h in air. SIMS depth profiling was used to determine the distribution of Na, Al, Si and other elements throughout the $SiO_2/PSG/SiO_2/Al-1%Si$ and $SiO_2/TEOS/SiO_2/Al-1%Si$ multilevel thin films. XPS was used to analyze chemical states of Si and O elements in $SiO_2$ passivation layers. Na peaks were observed throughout the $PSG/SiO_2$ and $TEOS/SiO_2$ passivation layers on the Al-1%Si thin films and especially at the interfaces. Na low temperature gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ and $SiO_2/TEOS/SiO_2/Al-1%Si$ multilevel thin films is considered to be caused by a segregation type of gettering.

• Journal of the Korean Ceramic Society
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• v.41 no.3
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• pp.235-242
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• 2004

Si, NH$_4$Cl, NaN$_3$, NaCl, $N_2$ were used as raw materials for preparation of $\alpha$-Si$_3$N$_4$ powder. NH$_4$Cl and NaN$_3$ were used as additives, and NaCl was used as a diluent. Initial $N_2$ gas pressure in the SHS reactor was 60 atm. In preparation of $\alpha$-Si$_3$N$_4$, the reactivity and the properties of the products were examined with the various kinds of additives and the content of diluent. At first, the optimum reaction system for the preparation of $\alpha$-Si$_3$N$_4$ is examined and then the optimum composition was examined in the optimum reaction system. The optimum reaction system was Si-$N_2$-additive(NH$_4$Cl+NaN$_3$)-diluent(NaCl) and the optimum composition was 38 wt%Si+50 wt%(NH$_4$Cl+NaN$_3$)+12 wt%NaCl. The maximum fraction of $\alpha$-phase of Si$_3$N$_4$ produced in this condition was 96.5 wt% and the shape of the $\alpha$-Si$_3$N$_4$ produced in this condition was an irregular fiber with a length of 10 ${\mu}{\textrm}{m}$ and a diameter of 1 ${\mu}{\textrm}{m}$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.70-73
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• 1999

Amorphous silica was hydrothermally reacted for 48~120h at $170~180^{\circ}C$ in molar ratios of $SiO_{2}/(NaOH+Na_{2}CO_{3})=2~20\;and\;H_{2}O/(NaOH+Na_{2}CO_{3})=200~250$. Na-kenyaite nuclei were formed directly from amorphous silica without formation of Na-magadiite nuclei in wide range with $SiO_{2}/(NaOH+Na_{2}CO_{3})=3~20$. Above $SiO_{2}/(NaOH+Na_{2}CO_{3})=10$, Na-kenyaite always produced with a residual amorphous silica. Well-crystallized Na-kenyaite without residual amorphous silica were obtained in the range of $SiO_{2}/(NaOH+Na_{2}CO_{3})=3~10$. Morphology of Na-kenyaite exhibited that a large spherical and loosely packed aggregates changed into the smaller and individual platelets according to increase of reaction time.

• Journal of the Korean institute of surface engineering
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• v.53 no.2
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• pp.59-66
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• 2020

Effects of Na₂SiO₃ concentration added into 0.1 M NaOH + 0.05 M NaF solution on the formation behavior and properties of PEO films on AZ91 Mg alloy were investigated under 1200 Hz of alternating current (AC) by voltage-time curves, in-situ observation of arc generation behavior and measurements of film thickness, surface roughness and micro vickers hardness. In the absence of Na₂SiO₃ in the 0.1 M NaOH + 0.05 M NaF solution, about 4 ㎛ thick PEO film was formed within 1 min and then PEO film did not grow but white spots were formed by local burning. Addition of Na₂SiO₃ up to 0.2 M caused more increased formation voltage and growth of PEO film with uniform generation of arcs. Addition of Na₂SiO₃ from 0.2 M to 0.4 M showed nearly the same voltage-time behavior and uniform arc generation. Addition of Na₂SiO₃ more than 0.5 M resulted in a decrease of formation voltage and non-uniform arc generation due to local burning. PEO film growth rate increased with increasing added Na₂SiO₃ concentration but maximum PEO film thickness was limited by local burning if added Na₂SiO₃ concentration is higher than 0.5 M. Surface roughness of PEO film increased with increasing added Na₂SiO₃ concentration and appeared to be proportional to the PEO film thickness. PEO film hardness increased with increasing added Na₂SiO₃ concentration and reached a steady-state value of about 930 H_V at more than 0.5 M of added Na₂SiO₃ concentration.

• Journal of the Korean Ceramic Society
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• v.28 no.8
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• pp.625-625
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• 1991

The specimens for the corrosion test were made by hot-pressing of SiC power with 2 wt% Nl2O3 and 10wt% Al2O3 additions at 2000℃ and 2050℃. The specimens were corroded in 37 mole% NaCl and 63 mole% Na2SO4 salt mixture at 1000℃ up to 60 min. SiO2 layer was formed on SiC and then this oxide layer was dissolved by Na2O ion in the salt mixture. The rate of corrosion of the specimen containing 10 wt% Al2O3 was slower than that of the specimen containing 2 wt% Al2O3. This is due to the presence of continuous grain boundary phase in the specimen containing 10 wt% Al2O3. The oxidation of SiC produced gas bubbles at the SiC-SiO2 interface. The rate of corrosion follows a linear rate law up to 50 min. and then was accelerated. This acceleration is due to the disruption oxide layer by the gas evolution at SiC-SiO2 interface. Pitting corrosion has found at open pores and grain boundaries.

• Journal of the Korean Chemical Society
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• v.55 no.4
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• pp.570-574
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• 2011

Large colorless single crystals of analcime with diameters up to 0.20 mm have been synthesized from gels with the composition of $3.00SiO_2$ : $1.50NaAlO_2$ : 8.02NaOH : $454H_2O$ : 5.00TEA. The fully $Na^+$-exchanged analcime have been prepared with aqueous 0.1 M NaCl (pH adjusted from 6 to 11 by dropwise addition of NaOH). The single-crystal structure of hydrated $|Na_{0.94}(H_2O)|[Si_{2.06}Al_{0.94}O_6]$-ANA per unit cell, a=13.703(3) ${\AA}$, has been determined by single-crystal X-ray diffraction technique in the orthorhombic space group Ibca at 294 K. The structure was refined using all intenties to the final error indices (using only the 1,446 reflections for which $F_o$ > $4{\sigma}(F_o))R_1/wR_2$ = 0.054/0.143. About 15 $Na^+$ ions are located at three nonequivalent positions and octahedrally coordinated. The chemical composition is $Na_{0.94}(H_2O)Si_{2.06}Al_{0.94}O_6$. The Si/Al ratio of synthetic analcime is 2.19 determined by the occupations of cations, 14.79, in the single-crystal determination work.

• Journal of the Korean Ceramic Society
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• v.41 no.12 s.271
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• pp.907-914
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• 2004

The nitridation mechanism of Si by SHS at $Si-NaCl-NH_{4}Cl-NaN_3$ system was investigated in this work. It was revealed that NaCl as a diluent was helpful to the perfect nitridation reaction by retarding the growth of Si particle resulted from the melting of Si at the initial stage of the nitridation reaction. And $NH_{4}Cl\;and\;NaN_3$ formed NaCl through decomposition and combination, and the preheating of pellet was helpful to the nitridation reaction in this process. The main nitridation mechanism of this system was liquid-gas reaction. The optimum porosity of the pellet for the nitridation of ${\alpha}-Si_{3}N_4$ was $67-69\%$.

• Journal of the Mineralogical Society of Korea
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• v.19 no.4 s.50
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• pp.347-353
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• 2006

The atomic-nano scale structures of multi-component aluminosilicate glasses have not been well understood in spite of its implications fur dynamics and generation of magma in the natural system due to lack of suitable spectroscopic and scattering experiments. Here, we report O-17 MAS and isotropic projection of 3QMAS NMR spectra for quaternary Na-Ca silicate glasses $[(CaO)_x(Na_2O)_{1-x}]\;(A1_2O_3)_{0.5}(SiO_2)_6,\;CNAS)$ at 14.1 Tesla where atomic configurations around bridging oxygen (Si-O-Si, Si-O-Al) and non bridging oxygen (Na-O-Si, Ca-O-Si, (Na, Ca)-O-Si) are partially resolved. With increasing Na content, the fraction of Na-O-Si increases while those for bridging oxygens remain constant. The Na/Ca ratio apparently affects the peak widths of bridging oxygen peaks (e.g., Si-O-Si)) and thus the topological entropy as well as chemical shifts of the bridging oxygen peaks, implying that both BOs and NBOs are strongly interacting with network modifying cations The effect of cation field strength on the degree of Al-avoidance was also discussed.