• Journal of Integrative Natural Science
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• v.5 no.4
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• pp.211-215
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• 2012

Single-crystalline silicon nanowire arrays (SiNWAs) using electroless metal-assisted etchings of p-type silicon were successfully fabricated. Ag nanoparticle deposition on silicon wafers in HF solution acted as a localized micro-electrochemical redox reaction process in which both anodic and cathodic process took place simultaneously at the silicon surface to give SiNWAs. The growth effect of SiNWs was investigated by changing of etching times. The morphologies of SiNWAs were obtained by SEM observation. Well-aligned nanowire arrays perpendicular to the surface of the silicon substrate were produced. Optical characteristics of SiNWs were measured by FT-IR spectroscopy and indicated that the surface of SiNWs are terminated with hydrogen. The thicknesses and lengths of SiNWs are typically 150-250 nm and 2 to 5 microns, respectively.

• Journal of Integrative Natural Science
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• v.16 no.4
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• pp.139-145
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• 2023

Due to changes in the distribution system and increased demand for renewable energy, interest in technology to increase the limit capacity of distributed energy grid connection using grid flexible resources is also increasing. Recently, the distribution system system is changing due to the increase in distributed power from renewable energy, and as a result, problems with the limited capacity of the distribution system, such as waiting for renewable energy to connect and increased overload, are occurring. According to the power generation facility status report provided by the Korea Power Exchange, of the total power generation capacity of 134,020 MW as of 2021, power generation capacity through new and renewable energy facilities is 24,855 MW, accounting for approximately 19%, and among them, power generation through solar power accounts for a total portion of the total. It was analyzed that the proportion of solar power generation facilities was high, accounting for 75%. In the future, the proportion of new and renewable energy power generation facilities is expected to increase, and accordingly, an efficient operation plan for the distribution system is needed. Advanced country-type NWAs that can integrate the operation and management of load characteristics for each line of the distribution system, power distribution, regional characteristics, and economic feasibility of distributed power in order to improve distribution network use efficiency without expanding distribution facilities due to the expansion of renewable energy. An integrated operating system is needed. In this study, in order to improve the efficiency of distribution network use without expanding distribution facilities due to the expansion of renewable energy, we developed a method that can integrate the operation and management of load characteristics for each line of the distribution system, power distribution, regional characteristics, and economic feasibility of distributed power. We want to develop an integrated operation system for NWAs similar to that of advanced countries.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.7
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• pp.427-431
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• 2017

In this paper, we discuss ${\beta}-Ga_2O_3$ thin films that have been grown on freestanding GaN (FS-GaN) using furnace oxidation. A GaN template was grown by horizontalhydride vapor phase epitaxy (HVPE), and FS-GaN was fabricated using the laser lift off (LLO) system. To obtain ${\beta}-Ga_2O_3$ thin film, FS-GaN was oxidized at $900{\sim}1,100^{\circ}C$. Surface and cross-section of prepared ${\beta}-Ga_2O_3$ thin films were observed by field emission scanning electron microscopy (FE-SEM). The single crystal FS-GaNs were changed to poly-crystal ${\beta}-Ga_2O_3$. The oxidized ${\beta}-Ga_2O_3$ thin film at $1,100^{\circ}C$ was peel off from FS-GaN. Next, oxidation of FS-GaNwas investigated for 0.5~12 hours with variation of the oxidation time. The thicknesses of ${\beta}-Ga_2O_3$ thin films were measured from 100 nm to 1,200 nm. Moreover, the 2-theta XRD result indicated that (-201), (-402), and (-603) peaks were confirmed. The intensity of peaks was increased with increased oxidation time. The ${\beta}-Ga_2O_3$ thin film was generated to oxidize FS-GaN.

• Korean Journal of Materials Research
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• v.10 no.8
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• pp.540-544
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• 2000

The effect of atmospheric annearling on the densification and electrical poperty of the Ca-doped $YCrO_3$were investigated. In order to study the densification and elecrical properties of $Y_{0.7}Ca_{0.3}CrO3$ the sample sintered at $1700^{\circ}C$ for 12hrs were subsequently annealed at $1400^{\circ}C$ under various atmospheres($O_2$, Air, $N_2$)as a function of time. The density of $Y_{0.7}Ca_{0.3}CrO3$ was $4.5/cm^3$ before annealing. Under the $N_2$ annealingm the bulk density of $Y_{0.7}Ca_{0.3}CrO3$ was increased to $4.9g/cm^3$ at 24hrs and then remained unchanged at 48hrs. When $Y_{0.7}Ca_{0.3}CrO3$nwas annealing at $1400^{\circ}C$ for 12hrs and 24hrs under $O_2$ activation energies were about 0.16eV at 12hrs and 24hrs, and showed 0.167eV below 400K, and 0.24eV over 400K at 48hrs.