• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.16 no.3
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• pp.7-12
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• 2016

DRAM is commonly used as a smartphone memory medium, but extending its capacity is challenging due to DRAM's large battery consumption and density limit. Meanwhile, smartphone applications such as social network services need increasingly large memory, resulting in long latency due to additional storage accesses. To alleviate this situation, we adopt emerging nonvolatile memory (NVRAM) as smartphone's buffer cache and propose an efficient management scheme. The proposed scheme stores all dirty data in NVRAM, thereby reducing the number of storage accesses. Moreover, it separately exploits read and write histories of data accesses, leading to more efficient management of volatile and nonvolatile buffer caches, respectively. Trace-driven simulations show that the proposed scheme improves I/O performances significantly.

• Proceedings of the Korea Information Processing Society Conference
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• 2017.04a
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• pp.857-860
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• 2017

RocksDB는 데이터를 Key-Value쌍으로 다루는 Key-Value 데이터베이스 시스템이며 효율적으로 데이터를 저장하기 위한 자료구조로 Log-Structured Merge-Tree를 사용하고 있다. 이에 더하여, 데이터베이스의 지속성을 위해 WAL 방식으로 로깅을 한다. 이러한 특징들로 인해 RocksDB는 신속하고 효과적인 데이터 처리와 지속성 보존이 가능하여 지속적으로 화두가 되고 있는 데이터베이스 시스템이다. 그러나 RocksDB는 WAL 로깅으로 인한 오버헤드가 발생한다. 본 논문에서는 RocksDB에서 발생하는 WAL 오버헤드를 측정하여 WAL 로깅이 차지하는 오버헤드를 분석하였으며, 차세대 비 휘발성 메모리인 NVRAM을 통해 오버헤드가 얼마나 개선 될 수 있는지 분석하였다. 분석을 통해 로깅 오버헤드는 성능 저하에 상당한 비중을 차지하고 있으며, 디바이스의 쓰기 속도에 따른 로깅 오버헤드의 차이를 발견 하였다.

• Journal of Information Technology Applications and Management
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• v.12 no.1
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• pp.125-140
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• 2005

Nowadays, we have many embedded systems which store and process multimedia data. For multimedia systems using hard disks as storage media such as DVR, existing file systems are not the right choice to store multimedia data in terms of cost. performance and reliability. In this study we designed a reliable file system with very high performance for embedded multimedia applications. The proposed file system runs with quite simple disk layout to reduce time to initialize and to recover after power failures, uses a large data block to speed up the sequential accesses, incorporates a time-based indexing scheme to improve the time-based random accesses and boosts reliability by backing up the important meta data on a small NVRAM. We implemented the file system on a Linux-based DVR and verified the performance by comparing with existing file systems.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.28-31
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• 2000

In this paper, the effects of La addition of PLZT(x/30/70) thin films Prepared by sol-gel method are investigated for NVFRAM application. The tetragonality (c/a), the grain size, and the surface roughness of PLZT thin films decrease with an increase of La concentration. As the La concentration increases, the dielectric constants at 10 kHz increase from 450 to 600, while the loss tangent decrease from 0.075 to 0.025. Also, the leakage current density at 100kV/cm decrease from 5.83$\times$10$^{-7}$ to 1.38$\times$10$^{-7}$ 4/$\textrm{cm}^2$. In the results of hysteresis loops measured at $\pm$170kV/cm, the remanent polarization and the coercive field of PLZT thin films with La concentration from 0 to 10㏖％ decrease from 20.8 to 10.5 $\mu$C/cm and from 54.48 to 32.12kV/cm, respectively. After a fatigue measurement by applying 10$^{9}$ square pulses with $\pm$5V, the remanent polarizations of PLZT thin films with 0 and 10㏖％ La concentration decrease about 64 and 42 ％ from initial state. In the results of retention measurement after 10$^{5}$ s, PLZT thin films with 0 to 10mo1％ La concentration show that the remanent polarization is decreased about 43％ and 9％ from initial state, respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.2
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• pp.128-133
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• 2008

Phase-change random access memory (PRAM) chip cell phase of amorphous state is rapidly changed to crystal state above 160 Celsius degree within several seconds during Infrared (IR) reflow. Thus, on-board programming method is considered for PRAM chip programming. We demonstrated the functional 512Mb PRAM with 90nm technology using several novel core circuits, such as metal-2 line based global row decoding scheme, PN-diode cells based BL discharge (BLDIS) scheme, and PMOS switch based column decoding scheme. The reverse-state standby current of each PRAM cell is near 10 pA range. The total leak current of 512Mb PRAM chip in standby mode on discharging state can be more than 5 mA. Thus in the proposed BLDIS control, all bitlines (BLs) are in floating state in standby mode, then in active mode, the activated BLs are discharged to low level in the early timing of the active period by the short pulse BLDIS control timing operation. In the conventional sense amplifier, the simultaneous switching activation timing operation invokes the large coupling noise between the VSAREF node and the inner amplification nodes of the sense amplifiers. The coupling noise at VSAREF degrades the sensing voltage margin of the conventional sense amplifier. The merit of the proposed sense amplifier is almost removing the coupling noise at VSAREF from sharing with other sense amplifiers.

• Journal of KIISE:Computing Practices and Letters
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• v.16 no.3
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• pp.336-340
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• 2010

Flash storages are prevalent as portable storage in computing systems. When we consider the detachability of Flash storage devices, data integrity becomes an important issue. To assure extreme data integrity, file systems synchronously write all file data to storage accompanying hot write references. In this study, we concentrate on the effect of hot write references on Flash storage, and we consider the effect of absorbing the hot write references via nonvolatile write cache on the performance of the FTL schemes in Flash storage. In 80 doing, we quantify the performance of typical FTL schemes for workloads that contain hot write references through a wide range of experiments on a real system environment. Through the results, we conclude that the impact of the underlying FTL schemes on the performance of Flash storage is dramatically reduced by absorbing the hot write references via nonvolatile write cache.

• Journal of KIISE:Computing Practices and Letters
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• v.14 no.5
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• pp.537-541
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• 2008

Log-Structured File System(LFS) is a disk based file system that is optimized for improving the write performance. LFS gathers dirty data in memory as long as possible, and flushes all dirty data sequentially at once. In a real system, however, maintaining dirty data in memory should be flushed into a disk to meet file system consistency issues even if more memory is still available. This synchronizations increase the cleaner overhead of LFS and make LFS to write down more metadata into a disk. In this paper, by adapting Non-volatile RAM(NV-RAM) we modifies LFS and virtual memory subsystem to guarantee that LFS could gather enough dirty data in the memory and reduce small disk writes. By doing so, we improves the performance of LFS by around 2.5 times than the original LFS.

• KIPS Transactions on Computer and Communication Systems
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• v.5 no.12
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• pp.491-498
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• 2016

Recently leakages of confidential information and internal date have been steadily increasing by using booting technique on portable OS such as Windows PE stored in portable storage devices (USB or CD/DVD etc). This method allows to bypass security software such as USB security or media control solution installed in the target PC, to extract data or insert malicious code by mounting the PC's storage devices after booting up the portable OS. Also this booting method doesn't record a log file such as traces of removable storage devices. Thus it is difficult to identify whether the data are leaked and use trace-back technique. In this paper is to propose method to help facilitate the process of digital forensic investigation or audit of a company by collecting and analyzing BIOS firmware images that record data relating to BIOS settings in flash memory and finding traces of portable storage devices that can be regarded as abnormal events.