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The Effect of Absorbing Hot Write References on FTLs for Flash Storage Supporting High Data Integrity  

Shim, Myoung-Sub (홍익대학교 컴퓨터공학과)
Doh, In-Hwan (홍익대학교 컴퓨터공학과)
Moon, Young-Je (홍익대학교 컴퓨터공학과)
Lee, Hyo-J. (홍익대학교 컴퓨터공학과)
Choi, Jong-Moo (단국대학교 컴퓨터과학과)
Lee, Dong-Hee (서울시립대학교 컴퓨터과학과)
Noh, Sam-H. (홍익대학교 컴퓨터공학과)
Publication Information
Journal of KIISE:Computing Practices and Letters / v.16, no.3, 2010 , pp. 336-340 More about this Journal
Abstract
Flash storages are prevalent as portable storage in computing systems. When we consider the detachability of Flash storage devices, data integrity becomes an important issue. To assure extreme data integrity, file systems synchronously write all file data to storage accompanying hot write references. In this study, we concentrate on the effect of hot write references on Flash storage, and we consider the effect of absorbing the hot write references via nonvolatile write cache on the performance of the FTL schemes in Flash storage. In 80 doing, we quantify the performance of typical FTL schemes for workloads that contain hot write references through a wide range of experiments on a real system environment. Through the results, we conclude that the impact of the underlying FTL schemes on the performance of Flash storage is dramatically reduced by absorbing the hot write references via nonvolatile write cache.
Keywords
Flash memory; FTL; NVRAM; Write cache;
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