• Journal of the Korean Ceramic Society
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• v.36 no.12
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• pp.1322-1326
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• 1999

In2O3 thick film gas sensor for detecting NOx gas of high concentration was fabricated by a screen printing technique. This work focussed on investigation of the change of sensitivity to NOx gas with firing temperatures of sensing layer and on improvement of the sensitivity by adding catalysts such as Al,. Ru, and SnO2 The cross sensitivites of sensor to CO, H2, CH4 and i-C4H10 gases were also examined under NO2 gas concentration of 200ppm Pure In2O3 gas sensor prepared at a firing temperature of 50$0^{\circ}C$ showed a maximum sensitivity to NOx gas at the operating temperature of 40$0^{\circ}C$ Al(0.004 wt%)-In2O3 sensor largely improved the sensitivities to both NO2 and NO gas and showed a superior selectivity compared with other gas sensors.

• Journal of Sensor Science and Technology
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• v.19 no.3
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• pp.176-183
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• 2010

It is considered that the urea injection DeNOx SCR(selective catalytic reduction) system is the only promising method to satisfy the worldwide NOx emission standards. As for the theoretical aspect, reactants of NO and $NO_2$ with $NH_3$ produce $H_2O$, $N_2$ and $O_2$ which do not harm human beings and environmental as well. The realization of maximum NOx conversion (without using a post oxidation catalyst) is only possible with closed loop controlled urea dosing. It means built-in $NH_3$ gas sensor have to be developed for detecting accurate $NH_3$ concentration for the feedback system. Using YSZ(yttria-stabilized zirconia) as a solid state electrolyte and $In_2O_3$ as a sensing material, this paper aims to study dependable $NH_3$ gas sensor for the promising solution of DeNOx technology, which have a reproducible electric output signal, a high sensitivity and fast response.

• Journal of Sensor Science and Technology
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• v.5 no.5
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• pp.39-46
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• 1996

The Pd or Pt-doped $WO_{3}$ thin-film NOx sensor was fabricated. The $WO_{3}$-based thin films as a gas-sensing layer were deposited at ambient temperature in a high-vacuum resistance heated evaporator and annealed at $500^{\circ}C$. The gas sensitivity ($R_{gas}/R_{air}$) to 5 ppm $NO_{2}$ measured at the operating temperature of $300^{\circ}C$ was 50 (highest sensitivity) for the 0.5 wt.% $Pt-WO_{3}$ sensor.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.9
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• pp.821-827
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• 2007

The nitrogen oxides, NO and $NO_2$, abbreviated usually as NOx, emitted from combustion facilities such as power plants and automobiles are the typical air-pollutants causing acid rain and photochemical smog. In order to solve the NOx-related pollution problems effectively, we need efficient techniques to monitor NOx in the combustion exhausts and in environments. Development of solid-state electrochemical devices for detecting NOx is demonstrated based on various combination of solid electrolytes and auxiliary sensing materials. The object of this research is to develop various sensor performance for solid state amperometric sensor, and to test gas sensor performance manufactured. So we try to present a guidance for developing amperometric gas sensor. We concentrated on development of manufacturing process and performance test. Amperometric Nitrogen dioxide sensor was fabricated using NASICON and an $NaNO_2$ layer deposited on the counter electrode. The current response was almost linear with Nitrogen dioxide concentration in the range 1-350 ppb at $150^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.365-365
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• 2008

In this work, Ga-doped ZnO (GZO) thin films for NOx gas sensor application were deposited on low temperature co-fired ceramics (LTCC) substrates, by RF magnetron sputtering method. The LTCC substrate is one of promising materials for this application since it has many advantages (e.g., low cost production, high manufacturing yields and easy realizing 3D structure etc.). The LTCC substrates with thickness of 400 pm were fabricated by laminating 12 green tapes which consist of alumina and glass particle in an organic binder. The structural properties of the fabricated GZO thin films with different thickness are analyzed by X-ray diffraction method (XRD) and field emission scanning electron microscope (FESEM). The GZO gas sensors are tested by gas measurement system under varing operation temperature and show good performance to the NOx gas in sensitivity and response time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.40-41
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• 2007

$SnO_2$ nanowires are used at the nanoscale level for the electrical transduction of the gas interaction with these sensing materials. We report on a study of high sensitivity and fast NOx gas sensor. We focused on improving the response time and refresh time by growth nanowires on the trench structure of Si substrate as air path. To improve refresh time we applied the trench structure with depth of $10\;{\mu}m$ by the inductively coupled plasma reactive ion etching(ICP-RIE). The fabricated device was measured at temperature of $200{\sim}300^{\circ}C$. The sensor exhibit ultra-fast and reversible electrical response (t90% ~4 s for response and ~3 s for recovery).

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.601-604
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• 1998

NOX detecting gas sensors using TiO2 doped tungsten oxide semiconductor were prepared and their electrical and sensing characteristics have been investigated. In normal air condition, the sensors of WO3, TiO2 doped WO3 show grain boundary heights of 0.34 eV, 0.25 eV, respectively. The grain boundary barrier energy variation was increased by doping TiO2 into large variation of resistance to NOX gases. And doping the TiO2 4 wt.%, the particle size of WO3 polycrystal films showed higher sensitivity and better sorption characteristics to NOX gas than the pure WO3 films material in air at operating temperature of $350^{\circ}C.$ The TiO2 doped WO3 semiconductor gas sensor shows nano-sized particle size and good sensitivity to sub-ppm concentration of NOX.

• Journal of the Korean Ceramic Society
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• v.32 no.12
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• pp.1369-1376
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• 1995

The WO3 thin-film NOx sensor which is of practical use and includes the heater and the temperature sensor was fabricated. The WO3 thin films as a gas-sensing layer was deposited at ambient temperature in a high-vacuum resistance heated evaporator. The highest sensitivity of the WO3 thin-film sensor to NOx was obtained under the condition of the annealing temperature of 50$0^{\circ}C$ and the operating temperature of 30$0^{\circ}C$. The gas sensing characteristics of this sensor was excellent, i.e. high sensitivity (Rgas/Rair in 3 ppm NO2=53) and fast response time (4 seconds).

• Journal of IKEEE
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• v.23 no.3
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• pp.793-799
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• 2019

In this study, the diffusion process and the thermal energy distribution gradient of the sensor were confirmed by using the finite element analysis program (COMSOL) of the mesh method to analyze the thermal diffusion in the wearable fabric (Nylon) + MWCNT gas sensor. To analyze the diffusion process of thermal energy, the structure of the gas sensor was modeled in a two dimension plane. The proposed modeling was presented with the characteristic value for the component of the sensor, and the gas sensor designed using the mesh finite element method (FEM) was proposed and analyzed by suggesting the one-way partial differential equation in the governing equation to know the degree of thermal energy diffusion and the thermal energy gradient. In addition, the temperature gradient 10[K/mm] of the anode-cathode electrode layer and the gas detection unit was investigated by suggesting the heat velocity transfer equation.

• Journal of the Korean Society for Heat Treatment
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• v.24 no.3
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• pp.140-143
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• 2011

In this work, Ga doped ZnO (GZO) films were prepared by radio frequency (RF) magnetron sputtering without intentional substrate heating on glass substrate and then the effect of the intense electron irradiation on structural and electrical properties and the NOx gas sensitivity were investigated. Although as deposited GZO films showed a diffraction peak for ZnO (002) in the XRD pattern, GZO films that electron irradiated at electron energy of 900 eV showed the higher intense diffraction peaks than that of the as deposited GZO films. The electrical property of the films are also influenced with electron's energy. As deposited GZO films showed the three times higher resistivity than that of the films irradiated at 900 eV In addition, the sensitivity for NOx gas is also increased with electron irradiation energy and the film sensor showed the proportionally increased gas sensitivity with NOx concentration. This approach is promising in gaining improvement in the performance of thin film gas sensors used for the detection of hazard gas phase.