• Korean Journal of Optics and Photonics
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• v.14 no.5
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• pp.530-534
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• 2003

A novel all-optical NOR gate is proposed and demonstrated for the first time by use of gain saturation in a semiconductor optical amplifier (SOA). It is operated by the nonlinearity of the SOA gain. Hence, to obtain sufficient gain saturation of the SOA, pump signals are amplified by an Er-doped fiber amplifier at the input of the SOA. The operation characteristics of the all-optical NOR gate are successfully measured at 10 Gbit/s.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.3
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• pp.1-6
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• 2011

Low-power logic gates, i.e. inverter, NAND, and NOR, are proposed employing only n-channel oxide thin film transistors (TFTs). The proposed circuits were designed to prevent the pull-up and pull-down switches from being turned on simultaneously by using asymmetric feed-through and bootstrapping, thereby exhibited same output voltage swing as the input signal and no static current. The inverter is composed of 5 TFTs and 2 capacitors. The NAND and the NOR gates consist of 10 TFTs and 4 capacitors respectively. The operations of the logic gates were confirmed successfully by SPICE simulation using oxide TFT model.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.1 s.343
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• pp.13-16
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• 2006

We have proposed and experimentally demonstrated the all-optical composite logic gates with XOR, NOR, OR and NAND functions using SOA-MZI structures to make it possible to simultaneously perform various logical functions. The proposed scheme is robust and feasible for high speed all-optical logic operation with high ER.

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 1984.10a
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• pp.25-27
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• 1984

Using LED sources, the system that performs optical logic function of the input data arrays will be presented. Sixteen possible functions of two binary data arrays, such as AND, OR, NOR and XOR are simply obtained in parallel by controlling LED switching mode. Experimental result and some examples of application will be given.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.17 no.5
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• pp.509-520
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• 1992

AIGaAs /GaAs HBT OR /NOR gate. which can be used for high speed digital system was designed. Equivalent circuit parameters of HBT were obtained from Gummel-Poon's model and direct extraction method. Simulation results with PSPI CE showed that propagation delay time and cutoff toggle frequency of designed gate were 25ps and 200Hz, respectively. the designed gate exhibited superior properties to the recently reported HBT ECL and MESFET SCFL when considering the fan-out characteristics and noise margin.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.4
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• pp.13-16
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• 1984

This paper proposes a new layout algorithm in order to minimize chip area in one dimensional MOS - LSI composed of basic cells, such as NAND or NOR gates. The virtval gates are constructed, which represent I/O of signal lines at the left-most and at the right-most side of the MCS gate array. With this, a heuristic algorithm is realized that can minimize the number of straight connectors passing through each gate, and as the result, minimize the horizontal tracks necessary to route. The usefulness of the algorithm proposed is shown by the execution of the experimental program on practical logic circuits.

• Proceedings of the Korean Institute of Intelligent Systems Conference
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• 2003.09a
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• pp.154-157
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• 2003

In order for testing faults of combinatorial logic circuit, the authors have developed a new diagnosis method: "Neural Network (NN) fault diagnosis", based on fm error back propagation functions. This method has proved the capability to test gate faults of wider range including so called SSA (single stuck-at) faults, without assuming neither any set of test data nor diagnosis dictionaries. In this paper, it is further shown that what kind of fault models can be detected in the NN fault diagnosis, and the simply modified one can extend to test delay faults, e.g. logic hazard as long as the delays are confined to those due to gates, not to signal lines.

• Proceedings of the IEEK Conference
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• 2000.07a
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• pp.347-350
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• 2000

We present the design of ternary flip-flop which is based on ternary logic so as to process ternary data. These flip-flops are fabricated with ternary voltage mode NOR, NAND, INVERTER gates. These logic gate circuits are designed using CMOS and obtained the characteristics of a lower voltage, a lower power consumption as compared to other gates. These circuits have been simulated with the electrical parameters of a standard 0.25 micron CMOS technology and 2.5 volts supply voltage. The Architecture of proposed ternary flip-flop is highly modular and well suited for VLSI implementation, only using ternary gates.

• Bulletin of the Korean Chemical Society
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• v.26 no.5
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• pp.849-851
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• 2005

• Journal of the Korea Institute of Information and Communication Engineering
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• v.26 no.5
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• pp.682-687
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• 2022

In this paper, the research results on monolithic three-dimensional integrated-circuit (M3DICs) stacked with tunneling field effect transistors (TFETs) are introduced. Unlike metal-oxide-semiconductor field-effect transistors (MOSFETs), TFETs are designed differently from the layout of symmetrical MOSFETs because the source and drain of TFET are asymmetrical. Various monolithic 3D inverter (M3D-INV) structures and layouts are possible due to the asymmetric structure, and among them, a simple inverter structure with the minimum metal layer is proposed. Using the proposed M3D-INV, this M3D logic gates such as NAND and NOR gates by sequentially stacking TFETs are proposed, respectively. The simulation results of voltage transfer characteristics of the proposed M3D logic gates are investigated using mixed-mode simulator of technology computer aided design (TCAD), and the operation of each logic circuit is verified. The cell area for each M3D logic gate is reduced by about 50% compared to one for the two-dimensional planar logic gates.