• Transactions of the Korean Society of Mechanical Engineers A
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• v.20 no.7
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• pp.2134-2140
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• 1996

This study was carried out to anlayze the heat-resistant characteristics of functionally gradient material(FGM) composed with ceramic and metal. The thermal fracture behavior of plasma-sprayed FGM and conventional coating material(NFGM) was exaimined by acoustic emession technique under heating and cooling. Furnace cooling and rapid cooling tests were used to examine the effect of temperature change under various conditions, respectively. At the high temperature above $800^{\circ}C$, it was shown that FGM gives higher thermal resistance compared to NFGM by AE signal and fracture surface analysis.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.325-327
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• 2011

In this paper, nonvolatile nano-floating gate memory devices are fabricated with ZnO nanowires and Al nanoparticles on a $SiO_2/Si$ substrate. Al nanoparticles used as floating gate nodes are formed by the sputtering method. The fabricated device exhibits a threshold voltage shift of -1.5 V. In addition, we investigate the endurance and retention characteristics of the nano-floating gate memory device.

• Korean Journal of Metals and Materials
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• v.48 no.8
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• pp.775-779
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• 2010

Functionally graded materials (FGM) of PSZ/NiCrAlY on Inconel substrate were fabricated by detonation gun spraying method. A thick ceramic layer generally has a high thermal barrier effect however, because failure often occurs, the use of an FGM layer gives an advantage in thermal property. During the thermal shock test, micro fracture processes were detected by the AE method. Also, the thermal shock test was performed for NFGM, FGM and the changed FGM in the layered composition profile. It was found through AE testing and the observation of fracture surface that FGM was superior to NFGM in thermal shock properties. The linear or metal-rich type FGM in composition profile had the best resisting property among the FGM. It was found that the controlled composition profile of the graded layers had better thermal properties.

• Journal of the Korea Concrete Institute
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• v.22 no.5
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• pp.667-673
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• 2010

The near fault ground motion (NFGM) is characterized by a single long period velocity pulse with large magnitude. NFGMs have been observed in recent strong earthquakes, Northridge (1994), Japan Kobe (1995), Turkey Izmit (1999), China Sichuan (2008), Haiti (2010) etc. These strong earthquakes have caused considerable damage to infrastructures because the epicenter was close to the urban area, called as NFGM. Extensive research for the far field ground motion (FFGM) have been carried out in strong seismic region, but limited research have been done for NFGM in low or moderate seismic regions because of very few records. The purpose of this research is to investigate and analyze the seismic response of reinforced concrete bridge piers subjected to near-fault ground motions. The seismic performance of six RC bridge piers depending on three confinement steel ratios and three superstructure mass was investigated on the shaking table. From these experimental results, it was confirmed that the reduction of seismic performance was observed for test specimens with lower confinement steel ratio or more deck weight. The displacement ductility of RC bridge piers in terms of the stiffness degradation is proposed based on test results the shaking table.

• Journal of the Earthquake Engineering Society of Korea
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• v.10 no.3 s.49
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• pp.101-111
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• 2006

This paper proposes a method for modeling new fault ground motion due to moderate size earthquakes in Stable Continental Regions (SCRs) for the first time. The near fault ground motion is characterized by a single long period velocity pulse of large amplitude. In order to model the velocity pulse, its period and peak amplitude need be determined in terms of earthquake magnitude and distance from the causative fault. Because there have been observed very few new fault ground motions, it is difficult to derive the model directly from the recorded data in SCRs. Instead an indirect approach is adopted in this work. The two parameters, the period and peak amplitude of the velocity pulse, are known to be functions of the rise time and the slip velocity. For Western United States (WUS) that belongs active tectonic regions, there art empirical formulas for these functions. The relations of rise time and slip velocity on the magnitude in SCRs are derived by comparing related data between Western United States and Central-Eastern United States that belongs to SCRs. From these relations, the functions of these pulse parameters for NFGM in SCRs can be expressed in terms of earthquake magnitude and distance. A time history of near fault ground motion of moderate magnitude earthquake in stable continental regions is synthesized by superposing the velocity pulse on the for field ground motion that is generated by stochastic method. As an demonstrative application, the response of a single degree of freedom elasto-plastic system is studied.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.22 no.1
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• pp.73-79
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• 1998

The development of a new material which should be continuously usable under severe environment of very high temperature has been urgently requested. The conventional thermal barrier coating(TBC) is a two layer coating, but a composition and a microstructure of functionally graded material(FGM) are varied continuously from place to place in ways designed to provide it with the maximum function of mitigating the induced thermal stress. The purpose of this study is to evaluate the heat-resistant characteristics by thermal shock of laser and furnace heating. The fracture behaviors of non-FGM(NFGM) and FGM were investigated based on acoustic emission(AE) technique during thermal shock test. Therefore, it can be concluded that FGM gives higher thermal resistance compared to NFGM by AE signal and fracture surface analysis.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1226-1227
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• 2008

In this study, a single p-type Si nanowire - Au nanoparticles nano floating gate memory (NFGM) device is successfully fabricated and characterized their memory effects by comparison of electrical characteristics of p-type Si nanowire-based field effect transistor (FET) devices with Au nanoparticles embedded in the $Al_2O_3$ gate materials and without the Au nanoparticles. Drain current versus gate voltage ($I_{DS}-V_{GS}$) characteristics of a single p-type Si nanowire - Au nanoparticle NFGM device show counterclockwise hysteresis loops with the threshold voltage shift of ${\Delta}V_{th}$= 3.0 V. However, p-type Si nanowire based top-gate device without Au nanoparticles does not exhibit a threshold voltage shift. This behavior is ascribed to the presence of the Au nanoparticles, and is indicative of the trapping and emission of electrons in the Au nanoparticles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.136-137
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• 2007

In this study, a single ZnO nanowire - CdTe nanoparticle nano floating gate memory (NFGM) device is successfully fabricated and characterized their memory effects by comparison of electrical characteristics of ZnO nanowire-based field effect transistor (FET) devices with CdTe nanoparticles embedded in the $Al_2O_3$ gate materials and without the CdTe nanoparticles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.255-255
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• 2009

In this work, nonvolatile nano-floating gate memory devices were fabricated with ZnO films and Al nanoparticles using the sputtering method on a glass substrate. Al nanoparticles acted as floating gate nodes in the devices. The fabricated device exhibits a threshold voltage shift of 1.7 V.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.118-118
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• 2011

The Nano-Floating Gate Memory(NFGM) devices with ZnO:Cu thin film embedded in Al2O3 and AlOx-SAOL were fabricated and the electrical characteristics were evaluated. To further improve the scaling and to increase the program/erase speed, the high-k dielectric with a large barrier height such as Al2O3 can also act alternatively as a blocking layer for high-speed flash memory device application. The Al2O3 layer and AlOx-SAOL were deposited by MLD system and ZnO:Cu films were deposited by ALD system. The tunneling layer which is consisted of AlOx-SAOL were sequentially deposited at $100^{\circ}C$. The floating gate is consisted of ZnO films, which are doped with copper. The floating gate of ZnO:Cu films was used for charge trap. The same as tunneling layer, floating gate were sequentially deposited at $100^{\circ}C$. By using ALD process, we could control the proportion of Cu doping in charge trap layer and observe the memory characteristic of Cu doping ratio. Also, we could control and observe the memory property which is followed by tunneling layer thickness. The thickness of ZnO:Cu films was measured by Transmission Electron Microscopy. XPS analysis was performed to determine the composition of the ZnO:Cu film deposited by ALD process. A significant threshold voltage shift of fabricated floating gate memory devices was obtained due to the charging effects of ZnO:Cu films and the memory windows was about 13V. The feasibility of ZnO:Cu films deposited between Al2O3 and AlOx-SAOL for NFGM device application was also showed. We applied our ZnO:Cu memory to thin film transistor and evaluate the electrical property. The structure of our memory thin film transistor is consisted of all organic-inorganic hybrid structure. Then, we expect that our film could be applied to high-performance flexible device.----못찾겠음......