• Steel and Composite Structures
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• v.36 no.3
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• pp.293-305
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• 2020

This article presented a nanoscale modified continuum model to investigate the free vibration of functionally graded (FG) porous nanobeam by using finite element method. The main novelty of this manuscript is presenting effects of four different porosity models on vibration behaviors of nonlocal nanobeam structure including size effect, that not be discussed before The proposed porosity models are, uniform porosity distribution, symmetric with mid-plane, bottom surface distribution and top surface distribution. The nano-scale effect is included in modified model by using the differential nonlocal continuum theory of Eringen that adding the length scale into the constitutive equations as a material parameter constant. The graded material is distributed through the beam thickness by a generalized power law function. The beam is simply supported, and it is assumed to be thin. Therefore, the kinematic assumptions of Euler-Bernoulli beam theory are held. The mathematical model is solved numerically using the finite element method. Results demonstrate effects of porosity type, material gradation, and nanoscale parameters on the free vibration of nanobeam. The proposed model is effective in vibration analysis of NEMS structure manufactured by porous functionally graded materials.

• Smart Structures and Systems
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• v.26 no.2
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• pp.213-226
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• 2020

In this manuscript, static and dynamic behaviors of geometrically imperfect carbon nanotubes (CNTs) subject to different types of end conditions are investigated. The Doublet Mechanics (DM) theory, which is length scale dependent theory, is used in the analysis. The Euler-Bernoulli kinematic and nonlinear mid-plane stretching effect are considered through analysis. The governing equation of imperfect CNTs is a sixth order nonlinear integro-partial-differential equation. The buckling problem is discretized via the differential-integral-quadrature method (DIQM) and then it is solved using Newton's method. The equation of linear vibration problem is discretized using DIQM and then solved as a linear eigenvalue problem to get natural frequencies and corresponding mode shapes. The DIQM results are compared with analytical ones available in the literature and excellent agreement is obtained. The numerical results are depicted to illustrate the influence of length scale parameter, imperfection amplitude and shear foundation constant on critical buckling load, post-buckling configuration and linear vibration behavior. The current model is effective in designing of NEMS, nano-sensor and nano-actuator manufactured by CNTs.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.10a
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• pp.295-298
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• 2005

This paper is concerned with the precision material property measurement of a micro metal thin foil that is used in MEMS technology. Since these MEMS components require great precision and accuracy, evaluation of reliability such as the lift cycle endurance test, impact test, and residual stress test is necessary for these components. However, in practice, real reliability tests are not easy to perform due to consideration of various factors. Rather than actual testing, it would be much easier to evaluate the reliability of components by the analytical approach. Although the analytical method is utilized by software tools, it is obviously necessary to acquire fundamental properties of materials through real test methods. In this paper, the oriented mechanical properties of aluminum thin foil are measured by nano scale material property measurement system.

• Bulletin of the Korean Chemical Society
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• v.28 no.4
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• pp.533-537
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• 2007

This paper describes the heteroepitaxial growth of single-crystalline 3C-SiC (cubic silicon carbide) thin films on Si (100) wafers by atmospheric pressure chemical vapor deposition (APCVD) at 1350 oC for micro/nanoelectromechanical system (M/NEMS) applications, in which hexamethyldisilane (HMDS, Si2(CH3)6) was used as a safe organosilane single-source precursor. The HMDS flow rate was 0.5 sccm and the H2 carrier gas flow rate was 2.5 slm. The HMDS flow rate was important in obtaing a mirror-like crystalline surface. The growth rate of the 3C-SiC film in this work was 4.3 μm/h. A 3C-SiC epitaxial film grown on the Si (100) substrate was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and Raman scattering, respectively. These results show that the main chemical components of the grown film were single-crystalline 3C-SiC layers. The 3C-SiC film had a very good crystal quality without twins, defects or dislocations, and a very low residual stress.

• Proceedings of the KIEE Conference
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• 2003.07a
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• pp.89-91
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• 2003

최근 들어 전력 계통은 점차 복잡해지고 계통 규모 역시 빠른 속도록 성장하고 있다. 이러한 환경 하에서 전력계통 운영을 담당하고 있는 한국전력거래소가 계통의 현 상태를 정확하게 파악하고 가능한 상정 고장에 대비하여 전력계통을 안정적으로 운영하는 것은 매우 중요하다고 할 수 있다. 이를 위해 기존의 스카다를 사용하여 계통의 상황을 파악하는 방법은 통신상의 잡음 및 측정값의 부정확성으로 인해 계통을 전체적으로 정확하게 파악하고 실시간 상정고장 분석과 같은 검토를 하는데 한계가 있다. 따라서 차세대 에너지 관리 시스템(NEMS)을 구축하는 단계에서 한국전력거래소는 상태추정 및 관련 응용프로그램을 실계통에 도입하여 전력 계통의 안정 운영에 기여하려 하고 있다. 상태추정이란 에러를 포함하고 있는 측정값과 네트워크 모델을 사용하여 현 계통의 전압, 위상각, 조류 둥의 실제 상태를 추정하는 방법으로 상태추정을 사용하여 현 상태 감시 및 실시간 상정고장 분석, 안전도 개선과 같은 기능을 수행할 수 있다. 본 논문에서는 차세대 EMS에 적용된 상태추정을 설명하고 실계통에 적용하여 파악한 상태추정의 기능을 보여주고 있다.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.252-257
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• 2004

Nanometer-sized structures are being applied to many devices including micro/nano electronics, optoelectronics, quantum devices, MEMS/NEMS, biosensors, etc. Especially, the thin film with submicron thickness is a basic structure for fabricating these devices, but its mechanical behaviors are not well understood. The mechanical properties of the thin film are different from those of the bulk structure and are difficult to measure because of its handling inconvenience. Several techniques have been applied to mechanical characterization of the thin film, such as nanoindentation test, micro/nano tensile test, strip bending test, etc. In this study, we focus on the strip bending test because of its high accuracy and moderate specimen preparation efforts, and measure Au thin film, which is a very popular material in micro/nano electronic devices. Au film is deposited on Si substrate by evaporation process, of which thickness is 100nm. Using the strip bending test, we obtain elastic modulus, yield and ultimate tensile strength, and residual stress of Au thin film.

• Proceedings of the KSR Conference
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• 2003.05a
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• pp.712-717
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• 2003

지능 재료를 이용한 디바이스는 자연계에 존재하는 생명체와 같이 내.외부 환경 변화에 대응하여 스스로 변하는 능동적 기능을 갖고 있기 때문에 시스템 성능의 극대화 및 유지비용의 최소화를 가져오게 된다. 이러한 지능재료 기술은 지난 10여년 전부터 연구되었는데 대표적인 웅용을 보면, 산업, 항공, 교통, 운송 분야의 능동 소음 및 반능동 진동제어; 복합 재료 손상위치 탐지시스템, 손상구조 건전성 평가시스템, 교량, 저장탱크, 건물, 유조선, 대형 구조물의 건전성 평가 시스템; 초정밀 직진 안내기구, 나노 스테이지, 절삭오차 보정용 엑츄에이터, 초음파 회전모터, 지능유압 서보밸브, 변형 거울 등의 모터/엑츄에이터; 자동차 엔진 성능제어, 흡배기구 압력측정, 가속도 센서, 자이로센서, 에어백 센서, 타이어 센서 등의 지능 MEMS/NEMS 센서; electronic article 정찰, 도서태그, 비접촉 항공 운송물 분류 및 보안시스템, 전자 운전자 식별시스템, 광섬유 건물 보안 시스템, 지능 신경망 형상 인식 시스템 등의 보안 시스템; 지능항공기 구조물, 인공위성안테나, 헬리콥터 회전익 등의 형상제어가 있다. 본 논문에서는 지능재료 기술을 정리하고 차세대 철도차량 기술에 지금까지 적용한 예를 소개하며 향후 적용할 수 있는 분야들을 가능성 및 실용성 면에서 소개하고자 한다.

• Journal of Sensor Science and Technology
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• v.17 no.5
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• pp.325-328
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• 2008

This paper describes the electrical properties of poly (polycrystalline) 3C-SiC thin films with different nitrogen doping concentrations. In-situ doped poly 3C-SiC thin films were deposited by APCVD at $1200^{\circ}C$ using HMDS (hexamethyildisilane: $Si_2(CH_3)_6)$) as Si and C precursor, and $0{\sim}100$ sccm $N_2$ as the dopant source gas. The peak of SiC is appeared in poly 3C-SiC thin films grown on $SiO_2/Si$ substrates in XRD(X-ray diffraction) and FT-IR(Fourier transform infrared spectroscopy) analyses. The resistivity of poly 3C-SiC thin films decreased from $8.35{\Omega}{\cdot}cm$ with $N_2$ of 0 sccm to $0.014{\Omega}{\cdot}cm$ with 100 sccm. The carrier concentration of poly 3C-SiC films increased with doping from $3.0819{\times}10^{17}$ to $2.2994{\times}10^{19}cm^{-3}$ and their electronic mobilities increased from 2.433 to $29.299cm^2/V{\cdot}S$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.331-332
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• 2007

Surface micromachined SiC devices have readily been fabricated from the polycrystalline (poly) 3C-SiC thin film which has an advantage of being deposited onto $SiO_2$ or $Si_3N_4$ as a sacrificial layer. Therefore, in this work, magnetron reactive ion etching process which can stably etch poly 3C-SiC thin films grown on $SiO_2$/Si substrate at a lower energy (70 W) with $CHF_3$ based gas mixtures has been studied. We have investigated the etching properties of the poly 3C-SiC thin film using PR/Al mask, according to $O_2$ flow rate, pressure, RF power, and electrode gap. The etched RMS (root mean square), etch rate, and etch profile of the poly 3C-SiC thin films were analyzed by SEM, AFM, and $\alpha$-step.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.357-358
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• 2007

Raman spectra of poly (polycrystalline) 3C-SiC thin films, which were deposited on the oxidized Si substrate by APCVD, have been measured. They were used to study the mechanical characteristics of poly 3C-SiC grown in various temperatures. TO and LO modes of 2.0 m poly 3C-SiC grown at 1180 C occurred at 794.4 and $965.7\;cm^{-1}$. Their FWHMs (full width half maximum) were used to investigate the stress and the disorder of 3C-SiC. The broad FWHM can explain that the crystallinity of 3C-SiC grown at 1180 C becomes poly crystalline instead of the disordered crystal. The ratio of intensity $I_{(LO)}/I_{(TO)}$ 1.0 means that the crystal defect of 3C-SiC/$SiO_2$/Si is small. The biaxial stress of poly 3C-SiC was obtained as 428 MPa. In the interface of 3C-SiC/$SiO_2$, the phonon mode of C-O bonding appeared at $1122.6\;cm^{-1}$. The phonon modes related to D and G bands of C-C bonding were measured at 1355.8 and $1596.8\;cm^{-1}$ respectively.