• Proceedings of the Korean Information Science Society Conference
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• 2005.11a
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• pp.883-885
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• 2005

광대역 통합망에서 방송과 통신기능을 결합한 컨텐츠 소비 환경을 통해 사용자는 컨텐츠 검색, 공유, 발행과 같은 컨텐츠 재분배를 수행해 새로운 컨텐츠 소비 체인을 형성하여 컨텐츠 획득 및 소비에 필요한 도메인을 방송망과 통신망으로 확장한다. 본 논문에서는 디지털 케이블망에 연결되어 방송 뿐 아니라 시청자가 능동적으로 자신이 원하는 컨텐츠를 검색하거나 발행 주체로서의 역할을 수행가능하도록 하는 NDR 플랫폼 개발 중 관련 SW 관점의 설계 및 구현방안에 관해 논한다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.24-26
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• 2002

In this paper, we discuss the electrical properties of self-assembled (2'-amino-4,4-di(ethynylphenyl)-5'-nitro-l-(thioacetyl)benzene), which has been well known as a conducting molecule having possible application to molecular level NDR device. The phenomenon of negative differential resistance (NDR) is characterized by decreasing current through a junction at increasing voltage. also fabrication of MIM-type molecular electronic and the Molecular Level Using Scanning Tunneling Microscopy

• Journal of Korea Society of Digital Industry and Information Management
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• v.4 no.4
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• pp.21-29
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• 2008

The DC characteristics of GaAS Gunn diode are investigated as a preliminary study on the planar grade gap injector GaAs Gunn diode which is the transferred electron device with high output power and dc-rf conversion efficiency. The Gunn devices we fabricated were confirmed to have the DC characteristics of negative differential resistance(NDR). We discussed the nature of the NDR effect, including the electron intervalley transfer; the NDR effect was examined for six different cathode radii.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.546-550
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• 2013

We propose a novel negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) by combining pn junction diode with depletion mode nanowire (NW) transistor, which suppress the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) Esaki diode with degenerately doped pn junction can provide multiple switching behavior having multi-peak and valley currents. These multiple NDR characteristics can be controlled by doping concentration of tunnel diode and threshold voltage of NW transistor. By designing our NDR device, PVCR can be over $10^4$ at low operation voltage of 0.5 V in a single peak and valley current.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.139-141
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• 2005

It is possble to study charge transfer property which is caused by height variation because we can see the organic materials barrier height and STM tip by organic materials energy band gap. Here, we investigated the negative differential resistance(NDR) and charge transfer property of self-assembled 4,4-Di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene, which has been well known as a conducting molecule. Self-assembly monolayers(SAMs) were prepared on Au(111), which had been thermally deposited onto pre-treatment($H_{2}SO_{4}:H_{2}O_{2}$=3:1) Si. The Au substrate was exposed to a 1 mM/l solution of 1-dodecanethiol in ethanol for 24 hours to form a monolayer. After thorough rinsing the sample, it was exposed to a $0.1{\mu}M/1$ solution of 4,4-Di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene in dimethylformamide(DMF) for 30 min and kept in the dark during immersion to avoid photo-oxidation. After the assembly, the samples were removed from the solutions, rinsed thoroughly with methanol, acetone, and $CH_{2}Cl_{2}$, and finally blown dry with $N_2$. Under these conditions, we measured electrical properties of self-assembly monolayers(SAMs) using ultra high vacuum scanning tunneling microscopy(UHV-STM). The applied voltages were from -1.50 V to -1.20 V with 298 K temperature. The vacuum condition is $6{\times}10^{-8}$ Torr. As a result, we found that NDR and charge transfer property by a little change of height when the voltage is applied between STM tip and electrode.

• The Plant Pathology Journal
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• v.30 no.3
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• pp.254-260
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• 2014

Potato Rpi-blb2 encodes a protein with a coiled-coil-nucleotide binding site and leucine-rich repeat (CC-NBSLRR) motif that recognizes the Phytophthora infestans AVRblb2 effector and triggers hypersensitive cell death (HCD). To better understand the components required for Rpi-blb2-mediated HCD in plants, we used virus-induced gene silencing to repress candidate genes in Rpi-blb2-transgenic Nicotiana benthamiana plants and assayed the plants for AVRblb2 effector. Rpi-blb2 triggers HCD through NbSGT1-mediated pathways, but not NbEDS1- or NbNDR1-mediated pathways. In addition, the role of salicylic acid (SA), jasmonic acid (JA), and ethylene (ET) in Rpi-blb2-mediated HCD were analyzed by monitoring of the responses of NbICS1-, NbCOI1-, or NbEIN2-silenced or Rpi-blb2::NahG-transgenic plants. Rpi-blb2-mediated HCD in response to AVRblb2 was not associated with SA accumulation. Thus, SA affects Rpi-blb2-mediated resistance against P. infestans, but not Rpi-blb2-mediated HCD in response to AVRblb2. Additionally, JA and ET signaling were not required for Rpi-blb2-mediated HCD in N. benthamiana. Taken together, these findings suggest that NbSGT1 is a unique positive regulator of Rpi-blb2-mediated HCD in response to AVRblb2, but EDS1, NDR1, SA, JA, and ET are not required.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1844-1846
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• 2005

The characteristic of negative differential resistance(NDR) is decreased current when the applied voltage is increased. The NDR is potentially very useful in molecular electronics device schemes. Here, we investigated the NDR property of self-assembled 4,4- Di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene, which has been well known as a conducting molecule. Self-assembly monolayers(SAMs) were prepared on Au(111), which had been thermally deposited onto pre-treatment$(H_2SO_4:H_2O_2=3:1)$ Si. The Au substrate was exposed to a 1mM/l solution of 1-dodecanethiol in ethanol for 24 hours to form a monolayer. After thorough rinsing the sample, it was exposed to a $0.1{\mu}M/l$ solution of 4,4-Di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene in dimethylformamide(DMF) for 30 min and kept in the dark during immersion to avoid photo-oxidation. After the assembly, the samples were removed from the solutions, rinsed thoroughly with methanol, acetone, and $CH_2Cl_2$, and finally blown dry with $N_2$. Under these conditions, we measured electrical properties of self-assembly monolayers(SAMs) using ultra high vacuum scanning tunneling microscopy(UHV-STM). The applied voltages were from -2V to +2V with 299K temperature. The vacuum condition is $6{\times}10^{-8}$ Torr. As a result, we found the NDR voltage of the nitro-benzene is $-1.61{\pm}0.26$ V(negative region) and $1.84{\pm}0.33$ (positive region), respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.7
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• pp.622-627
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• 2005

In this study, electrical properties of self-assembled dipyridinium dithioacetate molecule onto the Au(111) substrate is observed using Scanning Tunneling Microscopy(STM) by vortical structure of STM probe. At first, the Au(111) substrate is cleaned by piranha solution$(H_2SO_4:H_2O_2\;=\;3:1)$. Subsequently, 1 mM/ml of dipyridinium dithioacetate molecule is self-assembled onto the Au(111) surface. Using STM, the images of dipyridinium dithioacetate molecule which is self-assembled onto the Au(111) substrate, can be observed. In addition, the electrical properties(I-V) of dipyridinium dithioacetate can also be examined by using Scanning Tunneling Spectroscopy(STS). From the results of the measurement of the current-voltage(I-V), the property of Negative Differential Resistance(NDR) that shows the decreases of current according to the increases of voltage is observed. We found the NDR voltage of the dipyridinium dithioacetate is -1.42 V(negative region) and 1.30 V(positive region), respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.485-488
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• 2004

본 연구에서는 dipyridinium dithioacetate 분자를 Au(111) 표면에 자기조립하여 STM 탐침-유기 단분자막-Au(111)기판의 수직구조로 STM 측정시스템을 이용하여, 전기적 특성을 관찰하였다. 먼저 Au(111)기판을 Piranha용액$(H_2SO_4:H_2O_2=3:1)$으로 Au 표면을 전처리 하였다. 전처리한 Au(111) 기판을 dipyridinium dithioacetate 1mol/ml 농도로 자기조립 하였으며, 자기조립막의 표면 구조를 STM으로 관찰하였다. dipyridinium dithioacetate의 전기적 특성은 STM 탐침-유기단분자막-Au(111) 기판의 수직구조로 STS를 이용하여 조사하였다. 전압과 전류 측정에서 전압이 증가함에 따라 전류가 감소하는 부성 미분저항(NDR)의 특성이 관찰 되었다. NDR 수치가 $-545\;[m\Omega/cm^2]$였고, PVCR은 1.64:1 이었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.811-813
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• 2003

We investigated the electrical properties of self-assembled (4,4'-Di(ethynylphenyl)-2'-nitro-1-thioacetylbenzene), which has been well known as a conducting molecule having possible application to molecular level negative differential resistance(NDR)[1]. Generally, the phenomenon of NDR can be characterized by the decreasing current with the increasing voltage[2]. To deposit the SAM layer onto gold electrode, we transfer the prefabricated nanopores into a 1mM self-assembly molecules in THF solution. Au(111) substrates were prepared by ion beam sputtering method of gold onto the silicon wafer. As a result, we measured the voltage-current properties and confirmed the negative differential resistance properties of self-assembled organic thin film and measured, using Scanning Tunneling Microscopy(STM).