• 한국균학회소식:학술대회논문집
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• 한국균학회 2015년도 추계학술대회 및 정기총회
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• pp.28-28
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• 2015

Asexual reproduction or conidiation in aspergilli is a primary mean to produce their progenies that is environmentally and genetically controlled tightly. Previously, intensive researches in the model fungus Aspergillus nidulans disclosed some genes playing important roles in asexual and sexual development. Among them, one gene encoding a putative helix-loop-helix (HLH) transcription factor, named ndrA, has been isolated and characterized as a downstream regulator of developmental master regulator NsdD. By using comparative genome search of A. niduans NdrA protein, its orthologues have been identified in A. fumigatus and A. flavus, respectively (AfudrnA and AfldrnA). Deletion of the ndrA genes in both Aspergillus species made them unable to produce the conidia yet abundant production of sclerotia in A. flavus. Complementation of ndrA deletion strains by intact ndrA ORFs has restored the conidiation as in the control strains. In A. fumigatus, ndrA deletion also resulted in loss of conidiation phenotype. Northern analyses showed that the ndrA genes in both Aspergillus species are highly expressed at the early stage of the conidiation. Interestingly, the ndrA genes were found to be necessary for the proper expression of brlA genes. Antifungal sensitivity test revealed that the ndrA genes might be responsible for the sensitivity or resistance to some antifungal agents. However, ndrA deletion did not greatly influence the growth in both strains. And the A. flavus ndrA gene did not affect the aflatoxin production. Taken together, ndrA genes in Aspergillus species could be an important positive regulator of conidiation under the regulation of the nsdD gene yet upstream of the brlA gene.

• Korean Chemical Engineering Research
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• 제47권2호
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• pp.163-168
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• 2009

본 연구에서는 양이온, 중심원소, 배위원소가 치환된 Keggin 형 및 Wells-Dawson 형 헤테로폴리산 촉매의 NDR(negative differential resistance) 거동을 STM(scanning tunneling microscopy)을 이용하여 살펴보았다. 헤테로폴리산 촉매의 NDR 전압과 산화환원능력 사이에는 일정한 상관관계가 있었다. 촉매의 구조적 차이에 상관없이 산화환원능력이 높은 헤테로폴리산 촉매는 보다 낮은 음전압에서 NDR 거동을 나타내었다. 이처럼 NDR 전압은 촉매의 산화환원능력을 대변하는 하나의 correlating parameter로 활용될 수 있었다.

• The Plant Pathology Journal
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• 제21권2호
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• pp.149-157
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• 2005

A novel rice (Oryza sativa L.) gene, homologous to Arabidopsis pathogenesis-related NDR1 gene, was cloned from cDNA library prepared from 30 min Magnaporthe grisea -treated rice seedling leaves, and named as OsNDR1. OsNDR1 encoded a 220-aminoacid polypeptide and was highly similar to the Arabidopsis AtNDR1 protein. OsNDR1 is a plasma membrane (PM)-localized protein, and presumes through sequence analysis and protein localization experiment. Overexpression of OsNDR1 promotes the expression of PBZ1 that is essential for the activation of defense/stressrelated gene. The OsNDR1 promoter did not respond significantly to treatments with either SA, PBZ, or ETP. Exogenously applied BTH induces the same set of SAR genes as biological induction, providing further evidence for BTH as a signal. Presumably, BTH is bound by a receptor and the binding triggers a signal transduction cascade that has an ultimate effect on transcription factors that regulate SAR gene expression. Thus OsNDR1 may act as a transducer of pathogen signals and/or interact with the pathogen and is indeed another important step in clarifying the component participating in the defense response pathways in rice.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 학술대회 논문집 정보 및 제어부문
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• pp.288-290
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• 2004

Networked Digital Recorder(NDR) Platform is a system that owns contents jointly between tv viewers connected by the broadcast broadband convergence network. NDR suggests a new content distribution chain model that users can receive broadcast contents, share contents and sends contents by convergence network. This paper looks at the system requirements, service model and the overall system architecture of NDR platform.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.237-237
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• 1999

We have observed that a stable and reproducible Negative Differential Resistance(NDR) is induced by external microwave at low power in Nb/AlO$_x$/Al/Alo$_x$/Nb junctions. To study the erratic and pozzling NDR observations we have simulated Stewart-McCumber model in the region. Experimental results and simulation results will be presented with a discussion to draw a dynamic interpreration of the NDR.

• 전자통신동향분석
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• 제36권3호
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• pp.34-40
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• 2021

For developing a switching device of a new concept that cannot be implemented with a semiconductor device, we introduce the Mott insulator-metal transition (IMT) phenomenon occurring out of the semiconductor regime, such as the temperature-driven IMT, the electric-field or voltage-driven IMT, the negative differential resistance (NDR)-IMT switching generated at constant current, and the NDR-based IMT-oscillation. Moreover, the possibilities of new concept IMT switching devices are briefly explained.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1568-1570
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• 2003

We have studied the I-V characteristics of polytetrafluoroethylene(PTFE) thin film depending on a variation of thickness. Polymer PTFE buffer layer was made using thermal evaporation technique. The device was made in the structure of ITO/PTFE/Al. We have observed the NDR(negative differential resistance) behavior between 2.5V and 5V. There are some reports on this NDR behavior in the polymer thin film[1]. We have studied the NDR behavior depending on a variation thickness. As the film thickness increased, The NDR behavior decreased and moved in low electrical field, and we have studied the conduction mechanism of PTFE thin film.

• Asian Pacific Journal of Cancer Prevention
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• 제15권2호
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• pp.963-967
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• 2014

Previous studies have suggested anti-tumor effects of asiatic acid in some human cancer cell lines. This agent is reported to increase the levels of $p21^{WAF1/CIP1}$ in human breast cancer cell lines. However, the molecular mechanisms have not been established. Here we report that asiatic acid up-regulates $p21^{WAF1/CIP1}$ protein expression but not the level of $p21^{WAF1/CIP1}$ mRNA in HepG2 human hepatoma cells. Furthermore, we found that the asiatic acid induced increase of $p21^{WAF1/CIP1}$ protein was associated with decreased phosphorylation (ser-146) of $p21^{WAF1/CIP1}$. Knockdown of NDR1/2 kinase, which directly phosphorylates $p21^{WAF1/CIP1}$ protein at ser-146 and enhances its proteasomal degradation, increased the levels of $p21^{WAF1/CIP1}$ protein and eliminated the regulation of $p21^{WAF1/CIP1}$ stability by asiatic acid. At the same time, the expression of NDR1/2 kinase decreased during treatment with asiatic acid in HepG2 cells. Moreover, asiatic acid inhibited the proliferation of HepG2 cells, this being attenuated by knockdown of $p21^{WAF1/CIP1}$. In conclusion, we propose that asiatic acid inhibits the expression NDR1/2 kinase and promotes the stability of $p21^{WAF1/CIP1}$ protein through attenuating NDR1/2 dependent phosphorylation of $p21^{WAF1/CIP1}$ in HepG2 cells.

• Journal of Electrical Engineering and Technology
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• 제1권3호
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• pp.366-370
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• 2006

We investigated the negative differential resistance (NDR) property of self-assembled 4,4-di(ethynylphenyl)-2'-nitro-l-(thioacetyl)benzene ('nitro-benzene'), which has been well known as a conducting molecule [1], Self-assembly monolayers (SAMs) were prepared on Au (111), which had been thermally deposited onto pre-treated $(H_2SO_4: H_2O_2=3:1)$ Si, The Au substrate was exposed to a 1mM solution of 1-dodecanethiol in ethanol for 24 hours to form a monolayer. After thorough rinsing of the sample, it was exposed to a $0.1{\mu}M$ solution of nitro-benzene in dimethylformamide (DMF) for 30 min and kept in the dark during immersion to avoid photo-oxidation. Following the assembly, the samples were removed from the solutions, rinsed thoroughly with methanol, acetone, and $CH_2Cl_2$, and finally blown dry with $N_2$. Under these conditions, we measured the electrical properties of SAMs using ultra high vacuum scanning tunneling microscopy (UHV-STM) and scanning tunneling spectroscopy (STS) [2]. As a result, we confirmed the properties of NDR in between the positive and negative region.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권1호
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• pp.16-19
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• 2006

The characteristic of negative differential resistance(NDR) is decreased current when the applied voltage is increased. The NDR is potentially very useful in molecular electronics device schemes. Here, we investigated the NDR characteristic of self-assembled 4,4'-di(ethynylphenyl)-2'-nitro-1-benzenethiolate, which has been well known as a conducting molecule. Self-assembly monolayers(SAMs) were prepared on Au(111), which had been thermally deposited onto $pre-treatment(H_2SO_4:H_2O_2=3:1)$ Si. The Au substrate was exposed to a 1 mM/1 solution of 1-dodecanethiol in ethanol for 24 hours to form a monolayer. After thorough rinsing the sample, it was exposed to a 0.1 ${\mu}M/l$ solution of 4.4'-di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene in dimethylformamide(DMF) for 30 min and kept in the dark during immersion to avoid photo-oxidation. After the assembly, the samples were removed from the solutions, rinsed thoroughly with methanol, acetone, and $CH_2Cl_2,$ and finally blown dry with N_2. Under these conditions, we measured electrical properties of self-assembly monolayers(SAMs) using ultra high vacuum scanning tunneling microscopy(UHV-STM). The applied voltages were from -2 V to +2 V with 298 K temperature. The vacuum condition was $6{\time}10^{-8}$ Torr. As a result, we found the NDR voltage of the 4,4'-di(ethynylphenyl)-2'-nitro-1-benzenethiolate were $-1.61{\pm}0.26$ V(negative region) and $1.84{\pm}0.33$ V(positive region). respectively.