• 제목/요약/키워드: NAT

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Preferred orientation of TiN thin films produced by Ion Beam Assist Deposition

  • Won, J.Y.;Kim, J.H.;Kang, H.J.;Baeg, C.H.;Park, S.Y.;Hong, J.W.;Wey, M.Y.
    • 한국진공학회지
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    • 제6권S1호
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    • pp.154-159
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    • 1997

  • The crystal structure properties of TiN thin films deposited on SKD61 steel and Si(100) substrates by Ion Beam Assisted Deposition have been studied to clarify the thin film growth mechanism by using XRD, RBS, SEM, and AFM. The preferred orientation of TiN thin films changes from (111) to (100) as increasing the assisted energy. This tendency is independent of the substrate structure. The TiN thin film grow with (100) direction having surface free energy minimum as the assisted energy increases.

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