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Preferred orientation of TiN thin films produced by Ion Beam Assist Deposition

  • Won, J.Y.;Kim, J.H.;Kang, H.J.;Baeg, C.H.;Park, S.Y.;Hong, J.W.;Wey, M.Y.
    • Journal of the Korean Vacuum Society
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    • v.6 no.S1
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    • pp.154-159
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    • 1997

  • The crystal structure properties of TiN thin films deposited on SKD61 steel and Si(100) substrates by Ion Beam Assisted Deposition have been studied to clarify the thin film growth mechanism by using XRD, RBS, SEM, and AFM. The preferred orientation of TiN thin films changes from (111) to (100) as increasing the assisted energy. This tendency is independent of the substrate structure. The TiN thin film grow with (100) direction having surface free energy minimum as the assisted energy increases.

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