• Title/Summary/Keyword: N2 gas

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Separation Permeation Characteristics of N2-O2 Gas in Air at Cell Membrane Model of Skin which Irradiated by High Energy Electron (고에너지 전자선을 조사한 피부의 세포막모델에서 공기 중의 O2-N2 혼합기체의 분리투과 특성)

  • Ko, In-Ho;Yeo, Jin-Dong
    • Journal of the Korean Society of Radiology
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    • v.13 no.2
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    • pp.261-270
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    • 2019
  • The separation permeation characteristics of $N_2-O_2$ gas in air at cell membrane model of skin which irradiated by high energy electron(linac 6 MeV) were investigated. The cell membrane model of skin used in this experiment was a sulfonated polydimethyl siloxane(PDMS) non-porous membrane. The pressure range of $N_2$ and $O_2$ gas were appeared from $1kg_f/cm^2$ to $6kg_f/cm^2$. In this experiment(temperature $36.5^{\circ}C$), the permeation change of $N_2$ and $O_2$ gas in non-porous membrane by non-irradiation were found to be $1.19{\times}10^{-4}-2.43{\times}10^{-4}$, $1.72{\times}10^{-4}-2.6{\times}10^{-4}cm^3(STP)/cm^2{\cdot}sec{\cdot}cmHg$, respectively. That of $N_2$ and $O_2$ gas in non-porous membrane by irradiation were found to be $0.19{\times}10^{-4}-0.56{\times}10^{-4}$, $0.41{\times}10^{-4}-0.76{\times}10^{-4}cm^3(STP)/cm^2{\cdot}sec{\cdot}cmHg$, respectively. The irradiated membrane was significantly decreased about 4-10 times than membrane which was not irradiated. And ideal separation factor of $N_2$ and $O_2$ gas by non-irradiation was found to be from 1.32 to 0.42 and that of $N_2$ and $O_2$ gas by irradiation was found to be from 0.237 to 0.125. The irradiated membrane was significantly decreased about 4-5 times than membrane which was not irradiated. When the operation change(cut) and pressure ratio(Pr) by non-irradiation were about 0, One was increased to the oxygen enrichment and the other was decreased to the oxygen enrichment. The irradiated membrane was significantly decreased about 4-19 times than membrane which was not irradiated. As the pressure of $N_2$ and $O_2$ gas was increased, the selectivity was decreased. As separation permeation characteristics of $N_2-O_2$ gas in cell membrane model of skin were abnormal, cell damages were appeared at cell.

Theoretical Studies of the Gas-Phase Identity Nucleophilic Substitution Reactions of Cyclopentadienyl Halides

  • Lee, Ik-Choon;Li, Hong-Guang;Kim, Chang-Kon;Lee, Bon-Su;Kim, Chan-Kyung;Lee, Hai-Whang
    • Bulletin of the Korean Chemical Society
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    • v.24 no.5
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    • pp.583-592
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    • 2003
  • The gas phase identity nucleophilic substitution reactions of halide anions (X = F, Cl, Br) with cyclopentadienyl halides (1) are investigated at the B3LYP/6-311+G**, MP2/6-311+G** and G2(+)MP2 levels involving five reaction pathways: σ-attack $S_N2$, β-$S_N$2'-syn, β-$S_N$2'-anti, γ-$S_N$2'-syn and γ-$S_N$2'-anti paths. In addition, the halide exchange reactions at the saturated analogue, cyclopentyl halides (2), and the monohapto circumambulatory halide rearrangements in 1 are also studied at the same three levels of theory. In the σ-attack $S_N2$ transition state for 1 weak positive charge develops in the ring with X = F while negative charge develops with X = Cl and Br leading to a higher energy barrier with X = F but to lower energy barriers with X = Cl and Br than for the corresponding reactions of 2. The π-attack β-$S_N$2' transition states are stabilized by the strong $n_C-{\pi}^{*}_{C=C}$ charge transfer interactions, whereas the π-attack γ-$S_N$2' transition states are stabilized by the strong $n_C-{\sigma}^{*}_{C-X}$ interactions. For all types of reaction paths, the energy barriers are lower with X = F than Cl and Br due to the greater bond energy gain in the partial C-X bond formation with X = F. The β-$S_N$2' paths are favored over the γ-$S_N$2' paths only with X = F and the reverse holds with X = Cl and Br. The σ-attack $S_N2$ reaction provides the lowest energy barrier with X = Cl and Br, but that with X = F is the highest energy barrier path. Activation energies for the circumambulatory rearrangement processes are much higher (by more than 18 kcal $mol^{-1}$) than those for the corresponding $S_N2$ reaction path. Overall the gas-phase halide exchanges are predicted to proceed by the σ-attack $S_N2$ path with X = Cl and Br but by the β-$S_N$2'-anti path with X = F. The barriers to the gas-phase halide exchanges increase in the order X = F < Br < Cl, which is the same as that found for the gas-phase identity methyl transfer reactions.

Surface Discharge Characteristics in Different Media (이종절연재의 연면절연특성)

  • Shin, Sung-Ha
    • Journal of the Korean Society of Industry Convergence
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    • v.15 no.2
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    • pp.49-54
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    • 2012
  • With the improvement of industrial society, the high quality electrical energy, simplification of operation and maintenance, ensuring reliability and safety are being required. This paper reviews a basic data of the surface discharge characteristics for teflon resin in not only pure $N_2$, $N_2:O_2$ mixture gas and Dry-Air as being focused on environmentally friendly insulating Gas also $SF_6$. Used electrodes are Knife to Knife. With the changing distance of electrodes and pressure, we can find it, surface discharge voltages and surface dielectric strengths, respectively. Surface discharge Voltages of $N_2:O_2=80:20$ mixture gas are more higher than the $N_2:O_2$ Mixture gases.

The Hydrogen Generation's Characteristics using Plasma Reactor of Multi-needle Electrode Type (다중침전극형 플라즈마 반응기를 이용한 수소발생 특성)

  • Park, Jae-Yoon;Kim, Jong-Seok;Jung, Jang-Gun;Goh, Hee-Seok;Park, Sang-Hyun;Lee, Hyun-Woo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.11
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    • pp.1246-1251
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    • 2004
  • This paper is investigated about the effect of carrier gas type and the humidity for generating hydrogen gas. The vibration of the water surface is more powerful with increasing applied voltage. In this experimental reactor which is made of multi-needle and plate, the maximum acquired hydrogen production rate is about 3500 ppm. In the experimental result of generating hydrogen gas by non-thermal plasma reactor, the rate of generating hydrogen gas is different with what kind of carrier gas is. We used two types of carrier gas, such as $N_2$ and He. $N_2$ as carrier gas is more efficient to generate hydrogen gas than He because $N_2$ is reacted with $O_2$, which is made from water dissociation. In comparison with water droplet by humidifier and without water droplet by humidifier, the generation of hydrogen gas is decreased in case of water droplet by humidifier. That is the result that the energy for water dissociation is reduced on water surface because a part of plasma energy is absorbed at the small water molecular produced from humidifier.

Effect of the O2/N2 Ratio on the Growth of TiO2 Nanowires via Thermal Oxidation (열 산화를 이용한 TiO2 나노선의 성장에 미치는 O2/N2 가스비의 영향)

  • Lee, Geun-Hyoung
    • Korean Journal of Materials Research
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    • v.25 no.10
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    • pp.543-546
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    • 2015
  • $TiO_2$ nanowires were grown by thermal oxidation of TiO powder in an oxygen and nitrogen gas environment at $1000^{\circ}C$. The ratio of $O_2$ to $N_2$ in an ambient gas was changed to investigate the effect of the gas ratio on the growth of $TiO_2$nanowires. The oxidation process was carried out at different $O_2$/$N_2$ ratios of 0/100, 25/75, 50/50 and 100/0. No nanowires were formed at $O_2$/$N_2$ ratios of less than 25/75. When the $O_2$/$N_2$ ratio was 50/50, nanowires started to form. As the gas ratio increased to 100/0, the diameter and length of the nanowires increased. The X-ray diffraction pattern showed that the nanowires were $TiO_2$ with a rutile crystallographic structure. In the XRD pattern, no peaks from the anatase and brookite structures of $TiO_2$were observed. The diameter of the nanowires decreased along the growth direction, and no catalytic particles were detected at the tips of the nanowires which suggests that the nanowires were grown with a vapor-solid growth mechanism.

Numerical Modeling for GaN Deposition by MOCVD: Effects of the Gas Inlet

  • Yang, Wonkyun;Joo, Junghoon
    • Applied Science and Convergence Technology
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    • v.23 no.3
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    • pp.139-144
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    • 2014
  • GaN deposition equipment and processes for the fabrication of white LEDs (Light Emitting Diode) using MOCVD (Metal Organic Chemical Vapor Deposition) were numerically modeled to analyze the effects of a reactive gas introduction strategy. The source gases, TMGa and $NH_3$, were injected from a shower head at the top of the chamber; the carrier gases, $H_2$ or $N_2$, were introduced using two types of injection structures: vertical and horizontal. Wafers sat on the holder at a radial distance between 100 mm and 150 mm. The non-uniformity of the deposition rates for vertical and horizontal injection were 4.3% and 3.1%, respectively. In the case of using $H_2$ as a carrier gas instead of $N_2$, the uniform deposition zone was increased by 20%.

Effect of Hydrogen Treatment on Electrical Properties of Hafnium Oxide for Gate Dielectric Application

  • Park, Kyu-Jeong;Shin, Woong-Chul;Yoon, Soon-Gil
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.1 no.2
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    • pp.95-102
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    • 2001
  • Hafnium oxide thin films for gate dielectric were deposited at $300^{\circ}C$ on p-type Si (100) substrates by plasma enhanced chemical vapor deposition (PECVD) and annealed in $O_2$ and $N_2$ ambient at various temperatures. The effect of hydrogen treatment in 4% $H_2$ at $350^{\circ}C$ for 30 min on the electrical properties of $HfO_2$for gate dielectric was investigated. The flat-band voltage shifts of $HfO_2$capacitors annealed in $O_2$ambient are larger than those in $N_2$ambient because samples annealed in high oxygen partial pressure produces the effective negative charges in films. The oxygen loss in $HfO_2$films was expected in forming gas annealed samples and decreased the excessive oxygen contents in films as-deposited and annealed in $O_2$ or $N_2$ambient. The CET of films after hydrogen forming gas anneal almost did not vary compared with that before hydrogen gas anneal. Hysteresis of $HfO_2$films abruptly decreased by hydrogen forming gas anneal because hysteresis in C-V characteristics depends on the bulk effect rather than $HfO_2$/Si interface. The lower trap densities of films annealed in $O_2$ambient than those in $N_2$were due to the composition of interfacial layer becoming closer to $SiO_2$with increasing oxygen partial pressure. Hydrogen forming gas anneal at $350^{\circ}C$ for samples annealed at various temperatures in $O_2$and $N_2$ambient plays critical role in decreasing interface trap densities at the Si/$SiO_2$ interface. However, effect of forming gas anneal was almost disappeared for samples annealed at high temperature (about $800^{\circ}C$) in $O_2$ or $N_2$ambient.

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Optimum Design on the Mixed Ratio of Injection Gas with CO2/N2 in Enhanced Coalbed Methane Recovery (석탄층 메탄가스 회수증진공법에서 CO2/N2 주입가스의 혼합 비율 최적 설계)

  • Yoo, Hyun-Sang;Kim, Young-Min;Lee, Jeong-Hwan
    • Journal of the Korean Institute of Gas
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    • v.21 no.2
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    • pp.1-9
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    • 2017
  • Enhanced coalbed methane recovery (ECBM), as injecting $CO_2$ or $N_2$ into the coalbed methane (CBM) reservoir for increasing methane recovery, takes center stage in these days. ECBM makes a better recovery than the conventional production method, it called dewatering process. However the characteristics of injection gas affect to methane recovery, thus analysis on the mixed ratio of injection gas should be required. In this study, CBM reservoir model was built to estimate the methane recovery of ECBM method by different mixed ratio of injection gas. Additionally, to consider the characteristics of injection gas such as carbon captured storage, nitrogen re-injection, etc. economic analysis was performed. The results showed that ECBM cases produced methane almost twice as much as dewatering case and $CO_2$ 10% and $N_2$ 90% case resulted in the highest methane recovery among the mixed gas cases. On the other hand, the results of economic analysis showed that $CO_2$ 20% and $N_2$ 80% case made the highest total production profit. Therefore, both the recovery of methane and economical efficiency should be considered to apply ECBM process.

A Study on the Corrosion Properties and Microstructure of the Nitrocarburized and Oxidized Low Carbon Steel according to the Treatment Atmospheres (저탄소강의 질화침탄과 산화처리시 분위기 변화에 따른 조직 및 부식특성에 관한 연구)

  • Shin, P.W.;Lee, K.H.;Nam, K.S.;Park, Y.M.;Jo, H.J.
    • Journal of the Korean Society for Heat Treatment
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    • v.17 no.2
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    • pp.87-93
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    • 2004
  • Nitrocarburizing was carried out with various $CH_4$ gas composition with 4 torr gas pressure at $570^{\circ}C$ for 3 hours and post oxidation was carried out with 100% $O_2$ gas atmosphere with 4 torr at different temperatures for various time. In the case of plasma nitrocarburizing, It is that the ratio of ${\varepsilon}-Fe_{2-3}$(N, C) and ${\gamma}^{\prime}-Fe_4$(C, N), which comprise the compound layer phase, depend on concentrations of $N_2$ gas and $CH_4$ such that when the concentration of $N_2$ and $CH_4$ increased, the ratio of ${\gamma}^{\prime}-Fe_4$(C, N) decreased, but the ratio of ${\varepsilon}-Fe_{2-3}$(N, C) increased. The thickness of compound layer consistently increased as gas concentration increased regardless of $N_2$ and $CH_4$ expect when the concentration of $CH_4$ was 3.5 volume%, it decreased insignificantly. When oxidizing for 15min in the temperature range of $460{\sim}570{^\circ}C$, the study found small amount of $Fe_3O_4$ at the temperature of $460{^\circ}C$ and also found that amounts of $Fe_2O_3$. and $Fe_3O_4$ on the surface and amount of ${\gamma}^{\prime}-Fe_4$(C, N) in the compound layer increased as the increased over $460^{\circ}C$, but the thickness of the compound layer decreased. Corrosion resistance was influenced by oxidation times and temperature.

Electrical Breakdown Characteristics of N2 Gas under Impulse Voltages (임펄스전압에 대한 N2가스의 절연파괴특성)

  • Shin, Hee-Kyoung;Kim, Dong-Kyu;Lee, Bok-Hee
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.25 no.2
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    • pp.131-136
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    • 2011
  • This paper aims to examine the possibility of using an environmentally friendly $N_2$ as an alternative gas to $SF_6$. For this purpose, we have investigated breakdown characteristics of $N_2$ under impulse voltages in a quasi-uniform electric field gap. The 1.2/50[${\mu}s$] lightning impulse voltage, switching impulse voltages and oscillatory impulse voltages were applied at the test gap. The electric field utilization factor ranges from 0.5 to 0.8. The experimental data of $SF_6$ and $N_2$ acquired in the same experimental condition are presented in parallel for comparison. As a result, the breakdown voltages in $SF_6$ and $N_2$ are linearly increased with the gas pressure, also the breakdown voltages in $N_2$ are increased with increasing the gap distance and electric field utilization factor. The positive breakdown voltages are higher than the negative breakdown voltages. The nagative basic lightning impulse withstand level of 150[kV] in $N_2$ of about 0.5[MPa] is nearly equal to that in $SF_6$ of 0.15[MPa]. It is seen from the results obtained in this work that $N_2$ can be used as an eco-friendly alternative gas to $SF_6$ in distribution power equipment.