• 제목/요약/키워드: N170

검색결과 644건 처리시간 0.045초

Does $N_2O$ react over oxygen vacancy on $TiO_2$(110)?

  • 김보성;김유권
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.196-196
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    • 2011
  • Molecular $N_2O$ has bee known to react over oxygen vacancy on a reduced rutile $TiO_2$(110)-1${\times}$1 surface to desorb as molecular $N_2$ leaving oxygen atom behind. In the present study, we investigated the reaction of $N_2O$ on rutile $TiO_2$(110) using temperature-programmed desorption (TPD). Our results indicate that $N_2O$ does not react over the oxygen vacancy under a typical UHV experimental condition. On a rutile $TiO_2$(110)-1${\times}$1 with a well-defined oxygen vacancy concentration of 5% ($2.6{\times}10^{13}/cm^2$), $N_2O$ desorption features show a monolayer peak maximum at 135 K followed by a small peak maximum at 170 K. When the oxygen vacancy is blocked with $H_2O$, the $N_2O$ peak at 170 K disappears completely, indicating that the peak is due to molecular $N_2O$ interacting with oxygen vacancy. The integrated amount of desorbed $N_2O$ plotted against the amount of adsorbed $N_2O$ however shows a straight line with no offset indicating no loss of $N_2O$ during our cycles of TPD measurements. In addition, our $N_2O$ uptake measurements at 70~100 K showed no $N_2$ (as a reaction product) desorption except contaminant $N_2$. Also, $H_2O$ TPD taken after $N_2O$ scattering up to 350 K indicates no change in the vacancy-related $H_2O$ desorption peak at 500 K showing no change in the oxygen vacancy concentration after the interaction with $N_2O$.

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SiC 기판상에 성장된 AlN 박막을 이용한 AlN 결정 성장에 관한 연구 (A study on the AlN crystal growth using its thin films grown on SiC substrate)

  • 인경필;강승민
    • 한국결정성장학회지
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    • 제28권4호
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    • pp.170-174
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    • 2018
  • AlN 결정은 직경 1인치 크기의 기판이 개발되었고 계속 품질의 향상을 위해 연구되고 있다. 한편 2인치급 기판은 UV LED 칩 제조와 원가 감소를 위해 개발이 필요한 실정이다. 본 연구에서는 PVT 법으로 2인치의 AlN 결정을 SiC 기판상에 성장된 AlN 박막을 종자로 사용하여 성장의 가능성을 보고자 하였다. $10{\mu}m$ 두께의 AlN 박막 결정을 종자결정으로 사용하여 두께 7 mm의 AlN 결정을 성장하였다. 성장된 결정은 금속현미경과 실체현미경, DCXRD를 사용하여 분석하였다.

Activation of MKK6 induces invasive and migrative phenotypes in MCF10A human breast epithelial cells

  • Song, Hyun;Moon, A-Ree
    • 대한약학회:학술대회논문집
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    • 대한약학회 2003년도 Proceedings of the Convention of the Pharmaceutical Society of Korea Vol.2-2
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    • pp.170.2-170.2
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    • 2003
  • Ras expression has been suggested as a marker for tumor aggressiveness of breast cancer, including the degrees of invasion and tumor recurrence. We previously showed that p38 MAPK is a key signaling molecule differentially regulated by H-ras and N-ras, leading to H-ras-specific cell invasive and migrative phenotypes in human breast epithelial cells (Cancer Res: 63, 5454-5461, 2003). In this study, we further investigated the role of p38 MARK pathway in the induction of metastatic potential in MCF10A cells as a "gain of function" study. (omitted)

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다자유도 탄소섬유판 힘/토크 센서 개발 (Development of Multi-Degree of Freedom Carbon Fiber Plate Force/Torque Sensor)

  • 이동혁;김민규;조남규
    • 한국정밀공학회지
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    • 제29권2호
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    • pp.170-177
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    • 2012
  • A force/torque sensor using carbon fiber plate was designed and developed to make the sensor be able to measure a wide range of multi degree of force and torque. Using carbon fiber plate of 0.3 mm thickness, the sensor was designed and developed, which has a ${\mu}N$ level order of resolution and about 0.01 N ~ 390 N of wide measurement range. The elastic deformation part has a tripod plate structure and strain gauges are attached on the part to detect the force/torque. The coefficient of determination for the sensor is over 0.955 by the calibration experiment so that the linearity of the sensor is confirmed to be good. Also, experiments on applying 0.005 ~ 40 kg (0.05 ~ 390 N) to each axis were implemented and the sensor is proved to be safe under a high load. Finally, to verify the function calculating the direction of load vector, the directions of various load vectors which have the same magnitude but different directions and the directions of the calculated load vectors are compared and analyzed to accord well.

이항트리에서 S-에지번호 매김 (The S-Edge Numbering on Binomial trees)

  • 김용석
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2004년도 하계종합학술대회 논문집(1)
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    • pp.167-170
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    • 2004
  • We present a novel graph labeling problem called S-edge labeling. The constraint in this labeling is placed on the allowable edge label which is the difference between the labels of endvertices of an edge. Each edge label should be ${ a_n / a_n = 4 a_{n-l}+l,\;a_{n-1}=0}$. We show that every binomial tree is possible S-edge labeling by giving labeling schems to them. The labelings on the binomial trees are applied to their embedings into interconnection networks.

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