• Title/Summary/Keyword: N170

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Does $N_2O$ react over oxygen vacancy on $TiO_2$(110)?

  • Kim, Bo-Seong;Kim, Yu-Gwon;Li, Z.;Dohnalek, Z.;Kay, B.D.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.196-196
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    • 2011
  • Molecular $N_2O$ has bee known to react over oxygen vacancy on a reduced rutile $TiO_2$(110)-1${\times}$1 surface to desorb as molecular $N_2$ leaving oxygen atom behind. In the present study, we investigated the reaction of $N_2O$ on rutile $TiO_2$(110) using temperature-programmed desorption (TPD). Our results indicate that $N_2O$ does not react over the oxygen vacancy under a typical UHV experimental condition. On a rutile $TiO_2$(110)-1${\times}$1 with a well-defined oxygen vacancy concentration of 5% ($2.6{\times}10^{13}/cm^2$), $N_2O$ desorption features show a monolayer peak maximum at 135 K followed by a small peak maximum at 170 K. When the oxygen vacancy is blocked with $H_2O$, the $N_2O$ peak at 170 K disappears completely, indicating that the peak is due to molecular $N_2O$ interacting with oxygen vacancy. The integrated amount of desorbed $N_2O$ plotted against the amount of adsorbed $N_2O$ however shows a straight line with no offset indicating no loss of $N_2O$ during our cycles of TPD measurements. In addition, our $N_2O$ uptake measurements at 70~100 K showed no $N_2$ (as a reaction product) desorption except contaminant $N_2$. Also, $H_2O$ TPD taken after $N_2O$ scattering up to 350 K indicates no change in the vacancy-related $H_2O$ desorption peak at 500 K showing no change in the oxygen vacancy concentration after the interaction with $N_2O$.

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A study on the AlN crystal growth using its thin films grown on SiC substrate (SiC 기판상에 성장된 AlN 박막을 이용한 AlN 결정 성장에 관한 연구)

  • Yin, Gyong-Phil;Kang, Seung-Min
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.28 no.4
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    • pp.170-174
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    • 2018
  • AlN crystal is been developing in global site for many years and 1 inch diameter wafer was already developed but it is demanding the efforts for the better quality. On the other hand, also the 2-inch size is developing recently to reduce the unit cost for manufacturing and to use to fabrication of the UV LED chips. In this study, we tried to evaluate the possibility of bulk AlN crystals on his thin films by PVT method. The AlN thin film was grown on SiC single crystal 2" wafer by HVPE method. We successfully grew AlN bulk crystal of a thickness of 7 mm using its thin film of a thickness of $10{\mu}m$ as a seed crystal. The resultants of AlN crystals were identified by metallurgical microscope, optical stereographic microscope and DCXRD measurement.

Activation of MKK6 induces invasive and migrative phenotypes in MCF10A human breast epithelial cells

  • Song, Hyun;Moon, A-Ree
    • Proceedings of the PSK Conference
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    • 2003.10b
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    • pp.170.2-170.2
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    • 2003
  • Ras expression has been suggested as a marker for tumor aggressiveness of breast cancer, including the degrees of invasion and tumor recurrence. We previously showed that p38 MAPK is a key signaling molecule differentially regulated by H-ras and N-ras, leading to H-ras-specific cell invasive and migrative phenotypes in human breast epithelial cells (Cancer Res: 63, 5454-5461, 2003). In this study, we further investigated the role of p38 MARK pathway in the induction of metastatic potential in MCF10A cells as a "gain of function" study. (omitted)

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Development of Multi-Degree of Freedom Carbon Fiber Plate Force/Torque Sensor (다자유도 탄소섬유판 힘/토크 센서 개발)

  • Lee, Dong-Hyeok;Kim, Min-Gyu;Cho, Nahm-Gyoo
    • Journal of the Korean Society for Precision Engineering
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    • v.29 no.2
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    • pp.170-177
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    • 2012
  • A force/torque sensor using carbon fiber plate was designed and developed to make the sensor be able to measure a wide range of multi degree of force and torque. Using carbon fiber plate of 0.3 mm thickness, the sensor was designed and developed, which has a ${\mu}N$ level order of resolution and about 0.01 N ~ 390 N of wide measurement range. The elastic deformation part has a tripod plate structure and strain gauges are attached on the part to detect the force/torque. The coefficient of determination for the sensor is over 0.955 by the calibration experiment so that the linearity of the sensor is confirmed to be good. Also, experiments on applying 0.005 ~ 40 kg (0.05 ~ 390 N) to each axis were implemented and the sensor is proved to be safe under a high load. Finally, to verify the function calculating the direction of load vector, the directions of various load vectors which have the same magnitude but different directions and the directions of the calculated load vectors are compared and analyzed to accord well.

The S-Edge Numbering on Binomial trees (이항트리에서 S-에지번호 매김)

  • Kim Yong-Seok
    • Proceedings of the IEEK Conference
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    • 2004.06a
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    • pp.167-170
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    • 2004
  • We present a novel graph labeling problem called S-edge labeling. The constraint in this labeling is placed on the allowable edge label which is the difference between the labels of endvertices of an edge. Each edge label should be ${ a_n / a_n = 4 a_{n-l}+l,\;a_{n-1}=0}$. We show that every binomial tree is possible S-edge labeling by giving labeling schems to them. The labelings on the binomial trees are applied to their embedings into interconnection networks.

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