• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.12
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• pp.14-21
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• 1997

This study was conducte dto fabricate 2GHz circulator using Ca,Sn substituted UIG(yttrium iron garnet)ceramics. When the electric, magnetic and microwave properties were measured in Ca, Sn substituted YIG, the measured perimittivity and perfmeability in microwave frequencies were 16.25, 0.8964. For $Y_{2.4}$C $a_{0.3}$A $n_{0.3}$F $e_{3.5}$A $l_{1.5}$ $O_{12}$ garnet ceramics sintered at 1400.deg. C, the ferrimagnetic resonance line width (.DELTA.H) at 10GHz was 53 Oe and saturation magnetization was 375G. The strip-line circulator was simulated with 3-D FEM (finite element method) software and designed at the center frequency of 2GHz. The fabricated strip-line junction circulator using above YIG ceramics had insertion loss of 1.271dB, return loss of 23.843dB, isolation of 21.751dB at the center frequency 1.855GHz.z.z.z.z.z.z.

• Asian-Australasian Journal of Animal Sciences
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• v.22 no.5
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• pp.667-673
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• 2009

Ninety six intact male sheep (12 months old with mean live weight of about 35 kg) were used to assess the effects of restricted feeding on intake, digestion, nitrogen balance and metabolizable energy (ME). The animals were selected from two known Iranian small and large body size breeds: 48 Sangsari (S) and 48 Afshari (A), and were divided into two equal groups: restricted (R) and a control (C). Each group had 48 sheep (24 each breed). The experiment had a duration of 15 and 75 days adaptation and treatment periods, respectively. The animals were individually placed in metabolism cages and fed a diet based on pelleted concentrate mixture consisting of alfalfa, barley grain, cottonseed meal and barley straw. The animals in group C were fed ad libitum, while animals in group R were fed at maintenance level and maintained a relatively constant live weight. During the experiment, the average daily weight gain (ADG) of S and A animals in R group was 0.34 and -0.25 g/d (0.02 and -0.02 $g/kg^{0.75}/d$), respectively. While that of S and A animals in C group was 174.4 and 194.4 g/d (10.16 and 11.48 $g/kg^{0.75}/d$), respectively. Nitrogen (N) was determined by both measured and regression methods. Animals of R group stayed at about zero N balance (0.01 and -0.00 g $N/kg^{0.75}/d$ for S and A animals, respectively). The N retention of animals of both S and A breeds in C group were similar (0.45 and 0.46 g $N/kg^{0.75}/d$, respectively). Digestible organic matter intake (DOMI) and ME requirement for maintenance (MEm) were measured by both constant weight technique and regression method by regressing N balance on DOMI and ME intake on ADG. The measured DOMI during constant weight was 24.61 and 24.27 g $DOMI/kg^{0.75}/d$ and the calculated DOMI from regression equation was 24.24 and 24.22 g $DOMI/kg^{0.75}/d$, for S and A animals, respectively. The measured MEm was 402 and 401 kJ $ME/kg^{0.75}/d$ and the calculated MEm from regression analysis was 398 and 400 kJ $ME/kg^{0.75}/d$ for S and A breeds, respectively. There were no significant differences between both measured and regression techniques. There was no significant difference between S and A breeds for DOMI, N retention, MEm, digestibility and metabolizability values. Digestibility values for OM, GE and CP and metabolizability were significantly (p<0.05) higher in restricted feeding sheep compared with that of sheep fed ad libitum.

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.193-195
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• 1988

The native oxide films were thermally and anodically formed on the n-GaP substrates grown by SSD method and measured this oxide thickness and the chemical composition and the electrical properties with formation condition. The chemical composition of themally oxidized GaP film was composed of mostly $GaPO_4$ at temperature below $800^{\circ}C$ and mostly $\beta-Ga_{2}O_{3}$ above $800^{\circ}C$. But The chemical composition of anodically oxidized GaPfilm was composed of the mixture of $Ga_{2}O_{3}$ and $P_{2}O_{5}$. The barrier height of Al/oxide/n-Gap which was formed at $700^{\circ}C$ by thermal oxidation method were 1.10eV, 1.03eV in Current-Voltage measurement. Interface charge density were $4{\times}10^{12}q(C/cm^2)$ and $3{\times}10^{12}q(C/cm^2)$ in Capacitance-Voltage measurement respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.4 s.346
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• pp.1-7
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• 2006

AlN thin films have been fabricated by using RF magnetron sputtering method and their crystal orientations, microstructures and piezoelectric properties have been investigated with variation of the $Ar/N_2$ gas ratio and the substrate temperature. Particularly, when the $Ar/N_2$ gas ratio and the substrate temperature are 10/10 (sccm) and $400^{\circ}C$, respectively, the AlN thin film exhibits the highest (002) orientation. The result of the surface roughness measurement by using AFM shows that the surface roughness becomes better as the partial pressure of $N_2$ increases at the substrate temperature of $400^{\circ}C$ and it becomes the smallest value of 2.1 nm when $Ar/N_2$ is 0/20 (sccm). The AFM measurement also shows that when $Ar/N_2$ is 10/10 (sccm) shows that surface roughness becomes better as the substrate temperature increases from room temperature up to $300^{\circ}C$ and then it becomes worse as the substrate temperature goes up from $300^{\circ}C$. At the substrate temperature of $300^{\circ}C$ and $Ar/N_2$=10/10 (sccm), the surface roughness is 3.036 nm. The piezoelectric constant ($d_{33}$) of AlN thin film is measured by Pneumatic probe method. The measurement shows that the AlN thin film with the highest (002) orientation, fabricated at $Ar/N_2$=10/10 (sccm) and the substrate temperature of $400^{\circ}C$, has the best Piezoelectric constant ($d_{33}$) of 6.01 pC/N.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.11a
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• pp.565-566
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• 2008

• Mycobiology
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• v.45 no.4
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• pp.401-408
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• 2017

Colletotrichum gloeosporioides is an economically important fungal pathogen causing substantial yield losses indifferent host plants. To understand the genetic diversity and molecular epidemiology of this fungus, we have developed a novel, high-resolution multi-locus microsatellite typing (MLMT) method. Bioinformatic analysis of C. gloeosporioides unannotated genome sequence yielded eight potential microsatellite loci, of which five, CG1 $(GT)_n$, CG2 $(GT1)_n$, CG3 $(TC)_n$, CG4 $(CT)_n$, and CG5 $(CT1)_n$ were selected for further study based on their universal amplification potential, reproducibility, and repeat number polymorphism. The selected microsatellites were used to analyze 31 strains of C. gloeosporioides isolated from 20 different host plants from India. All microsatellite loci were found to be polymorphic, and the approximate fragment sizes of microsatellite loci CG1, CG2, CG3, CG4, and CG5 were in ranges of 213-241, 197-227, 231-265, 209-275, and 132-188, respectively. Among the 31 isolates, 55 different genotypes were identified. The Simpson's index of diversity (D) values for the individual locus ranged from 0.79 to 0.92, with the D value of all combined five microsatellite loci being 0.99. Microsatellite data analysis revealed that isolates from Ocimum sanctum, Capsicum annuum (chili pepper), and Mangifera indica (mango) formed distinct clusters, therefore exhibited some level of correlation between certain genotypes and host. The developed MLMT method would be a powerful tool for studying the genetic diversity and any possible genotype-host correlation in C. gloeosporioides.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.1
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• pp.33-38
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• 2003

Highly homogeneous PZT powder was prepared by a partial oxalate method using chemicals of (Z $r_{0.53}$ $Ti_{0.47}$) $O_2$, Pb(N $o_3$)$_2$and (COOH)$_2$ㆍ2$H_2O$. N $b_2$ $O_{5}$ addition effect on microstructure and electrical properties of PZT ceramics was investigated. When the precursors were calcined at 71$0^{\circ}C$, a single perovskite phase was obtained. After sintering at 110$0^{\circ}C$, X-ray diffraction Patterns showed coexistence of rhombohedral and tetragonal phases regardless of the N $b_2$ $O_{5}$ content. As the content of N $b_2$ $O_{5}$ increased, grain size decreased but sintered density increased. The electromechanical coupling factor of kp and the piezoelectric constant of $d_{31}$ increased linearly with the content of N $b_2$ $O_{5}$, and those values reached 0.7 and -200, respectively, when 1.2 mol% of N $b_2$ $O_{5}$ is added. is added.ded.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.30 no.10C
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• pp.1007-1016
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• 2005

This paper presents a feature extraction method for shape based retrieval of 3D models. Since the feature descriptor of 3D model should be invariant to translation, rotation and scaling, it is necessary to preprocess the 3D models to represent them in a canonical coordinate system. We use the PCA(Principal Component Analysis) method to preprocess the 3D models. Also, we apply that to make a MBR(Minimum Boundary Rectangle) and a circumsphere. The proposed algorithm is as follows. We generate a circumsphere around 3D models, where radius equals 1(r=1) and locate each model in the center of the circumsphere. We produce the concentric spheres with a different radius($r_i=i/n,\;i=1,2,{\ldots},n$). After looking for meshes intersected with the concentric spheres, we compute the curvature of the meshes. We use these curvatures as the model descriptor. Experimental results numerically show the performance improvement of proposed algorithm from min. 0.1 to max. 0.6 in comparison with conventional methods by ANMRR, although our method uses .relatively small bins. This paper uses $R{^*}-tree$ as the indexing.

• Proceedings of the Korean Vacuum Society Conference
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• 2002.02a
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• pp.166-166
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• 2002

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.8
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• pp.26-34
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• 1997

To develop ultrathin gate oxide for ULSI MOSFETs, for the first time, we fabricated MOS capacitors with 65.angs. thick initial oxide grown by high pressure oxidation (HIPOX) at 700.deg. C in 5 atmosphere $O_{2}$ ambient and then followed by rapid thermal nitridation (RTN) in N$_{2}$O ambient. The dielectric breakdown fields of the initial HIPOX oxide are 13.0 MV/cm and 13.8MV/cm for negative and positive gate bias, respectively and are dependent on nitridation temeprature and time.The lifetimes of the HIPOX oxides extractd by TDDB method are 1.1*10$^{8}$ sec and 3.4 * 10$^{9}$ sec for negative and positive stress current, respectively. The lifetime of the HIPOX oxide dfor negative stress current increases with nitridation time in N$_{2}$O ambient at 1100.deg.C, reaching maximum value stress curretn increases with nitridation time in N$_{2}$O ambient at 1100.deg. C reacing maximum value of 1.2*10$^{9}$ sec for 30 sec of nitridation time, and then subsequently decreases at the longer nitridation time. The lifetimes of the nitrided-HIPOX oxides are longer than 10 years when nitridations are carried out longer than about 50 sec and 12 sec at 1000.deg. C, and 1100.deg. C, respectively.