• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.764-768
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• 2002

Characteristics of ohmic Co/Si/Co contacts to n-type 4H-SiC are investigated systematically. The ohmic contacts were formed by annealing Co/Si/Co sputtered sequentially. The annealings were performed at $800^{\circ}C$ using RTP in vacuum ambient and $Ar:H_2$(9:1) ambient, respectively. The specific contact resistivity$(\rho_c)$, sheet resistance$(R_s)$, contact resistance$(R_c)$, transfer length$(L_T)$ were calculated from resistance$(R_T)$ versus contact spacing(d) measurements obtained from TLM(transmission line method) structure. While the resulting measurement values of sample annealed at vacuum ambient were $\rho_c=1.0{\tiimes}10^{-5}{\Omega}cm^2$, $R_c=20{\Omega}$ and $L_T$ = 6.0 those of sample annealed at $Ar:H_2$(9:1) ambient were $\rho_c=4.0{\tiimes}10^{-6}{\Omega}cm^2$, $R_c=4.0{\Omega}$ and $L_T$ = 2.0. The physical properties of contacts were examined using XRD and AES. The results showed that cobalt silicide was formed on SiC and Co was migrated into SiC.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 B
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• pp.1325-1327
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• 2002

$ITO_{(n)}/Si_{(p)}$ solar cell was fabricated by vaccum deposition method under the resistance heating with substrate temperature kept about 200[$^{\circ}C$] and than their properties are investigated. The cell charateristics can be improved by annealing but are deteriorated at temperature above 650[$^{\circ}C$] for longer than 15[min].

• 대한화학회지
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• 제45권4호
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• pp.312-317
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• 2001

7'-Aldehyde-nucleoside 유사체(2a, 2c)을 6-N-benzoyl-2',3'-O-isopropylideneadenosiner과 uridine으로부터 합성하였다. 2와 Wittig reagent인 ethoxycarbonylmethylene을 축합시켜 ethoxycarbonyl group을 갖는 탄소수를 증가시킨 공액 이중 결합을 지닌 nucleosi de 유사체, ethyl-1',5',6',7',8'-pentadeoxy-1'-(adenin-9-yl)-$\beta$-D-ribo-nnona-5'(E).7'(E)-dienofuranuronate(4b), ethyl-1',5',6',7',8'-pentadeoxy-1'-(uracyl-1-yl)-$\beta$-D-ribo-nona-5'(E),7'(E)-dienofuranuronate(4c)을 얻었다. 또한 2와 CBr4, Ph3P을 반응시켜 공액 이중 결합을 지닌 9-[8',8'-dibromo-5',6',7',8'-tetradeoxy-$\beta$-D-ribo-octa-5'(E),7'(E)-diene]nucleosides (6b,6c) 유사체를 각각 합성하였다.

• 한국산학기술학회논문지
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• 제11권6호
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• pp.2311-2316
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• 2010

디아민으로서 p-phenylene diamine, 4,4'-oxydianiline, 1,4-bis(4-aminophenoxy)benzene에 대해 이염기산으로서 terephthalic acid와 2,2'-bibenzoic acid를 혼합 사용하여, 주쇄에 Biphenyl-2,2'-diyl 구조를 갖는 copolyterephthalamide를 직접중축합법에 의해 합성하였다. 얻어진 공중합체는 $0.46{\sim}0.93dL/g$의 본성점도를 나타내었으며, 이들 대부분은 N,N-dimethylacetamide와 N-methyl-2-pyrrolidone과 같은 범용 유기용매에 용해하였고, 유리전이온도는 $239^{\circ}C$와 $326^{\circ}C$ 사이의 값을 나타냈으며, 질소기류하 10% 열분해 온도는 $410{\sim}485^{\circ}C$였다.

• 태양에너지
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• 제18권1호
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• pp.91-98
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• 1998

밑면이 가열되고 다양한 격판을 가진 실내공간에서의 혼합대류 열전달을 유한체적법을 사용하여 연구하였다. 본 연구에서 사용된 변수는 50$\overline{Nu}=\overline{Nu_n}{\cdot}(1+c(Re/Gr^{1/2})^d)$로 나타낼 수 있다. 여기서 $\overline{Nu_n}$는 순수 자연대류를 나타낸다.

• 약학회지
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• 제22권4호
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• pp.238-241
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• 1978

A simple and convenient method of detecting N, N-dimethy laniline (D.M.A.) residues in ampicillin trihydrate (A.T.) was established. D.M.A. was extracted by chloroform from the chloroform presaturated N/10-ammonia water solution of A.T. and chromatographed on silica gel G thin layer. Blue spot appeared in 15minutes after spray of 2, 6-dichloroquinonechlorimide solution was compared with the blue spot of reference concomitantly processed. The developing solvent was prepared by mixing equal volume of cyclohexane and chloroform. To quantitate the amount of D.M.A. in A.T., T.L.C. was performed with the Eastmann Chromatogram sheet, then color density was measured by Cosmo Superclick densitometer. The developing solvent at this time was cyclohexane-chlorofonn (3+7) mixture. The peak areas obtained with the amount of D.M.A ranging from 0.05 to 2.0 .mu.g were linear to color density. Better sensitive results would be available with the densitometer equipped with monochromator.

• 천문학회지
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• 제23권1호
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• pp.1-13
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• 1990

New uvby photoelectric photometry was carried out for a $\delta$ Scuti variable, HR1170. By applying the Fourier method and the linear least square method, three frequencies were derived: $f_1=10.06134c/d$ ($P_1=0.^d0994$). $f_2=11.91754c/d$ ($P_2=0.^d0839$). $f_3=18.96776c/d$ ($P_3=0.^d0527$). From the observed pulsational constants and from the phase difference and amplitude ratios for color(b-y) and magnitude y. three different pulsation modes (n, l) of $f_1(0,0)$, $f_2(1,2)$, $f_3(3,2)$ are deduced, indicating the existence of nonradial mode in HR1170. Some physical parameters indicate that HR1170 is evolving at the stage of H-shell burning.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권5호
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• pp.497-503
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• 2015

It is essential to acquire an accurate and simple technique for extracting the interface trap density ($D_{it}$) in order to characterize the normally-off gate-recessed AlGaN/GaN hetero field-effect transistors (HFETs) because they can undergo interface trap generation induced by the etch damage in each interfacial layer provoking the degradation of device performance as well as serious instability. Here, the frequency-dependent capacitance-voltage (C-V) method (FDCM) is proposed as a simple and fast technique for extracting $D_{it}$ and demonstrated in normally-off gate-recessed AlGaN/GaN HFETs. The FDCM is found to be not only simpler than the conductance method along with the same precision, but also much useful for a simple C-V model for AlGaN/GaN HFETs because it identifies frequency-independent and bias-dependent capacitance components.

• 한국안전학회지
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• 제16권1호
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• pp.31-36
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• 2001

Surface crack growth characteristics and influence of the stress amplitude in rotary bending fatigue test were evaluated for annealed S35C steel, and than fractal dimensions of fatigue crack paths estimated using the box counting method. The following results that will be helpful to understand the fatigue crack growth mechanism were obtained. (1) Crack growth rate ds/dN and db/dN (s : half crack length at the surface crack, b : crack depth) depended on stress amplitude (${\Delta}{\sigma}/2$), stress intensity factor range (${\Delta}K_A, {\Delta}K_C$) and crack length. (2) At the effect area of 0.3 mm hole notch (s＜0.5 mm) crack growth rate did not depend on these factors. (3) The fractal dimensions (D) increased with stress amplitude (${\Delta}{\sigma}/2$) but decreased with cyclic number.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.916-919
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• 2000

A great deal of research has been done in the field of characterization for piezoelectric thin films after the first report on the measurement for the piezoelectric coefficient of thin films in 1990. The main idea of this research is to provide a distinctive solution for the measurement of both the longitudinal and the transverse piezoelectric d-coefficients, d$\sub$33/ and d$\sub$3l/, of ferroelectric thin films and also thick films. In general, to get these two coefficients of thin films, two different measuring systems are required. Here, we propose the improved method for the evaluation of these two coefficients with single equipment and with the relatively convenient procedure. The two-step loading process of applying the both positive and the negative pressure has been designed to acquire the piezoelectric coefficients. These results have beer calibrated for both the longitudinal and the transverse piezoelectric d-coefficients, d$\sub$33/ and d$\sub$31/, of thin films. In the first stage of the experiments, we have obtained d$\sub$33/ of 108pC/N and d$\sub$31/ of 57pC/N for the PZT thin films.