A Study on the Oxide Semiconductor $ITO_{(n)}/Si_{(p)}$ Solar Cell(I)

산화물 반도체 $ITO_{(n)}/Si_{(p)}$ 태양전지에 관한 연구(I)

$ITO_{(n)}/Si_{(p)}$ solar cell was fabricated by vaccum deposition method under the resistance heating with substrate temperature kept about 200[$^{\circ}C$] and than their properties are investigated. The cell charateristics can be improved by annealing but are deteriorated at temperature above 650[$^{\circ}C$] for longer than 15[min].