• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.764-768
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• 2002

Characteristics of ohmic Co/Si/Co contacts to n-type 4H-SiC are investigated systematically. The ohmic contacts were formed by annealing Co/Si/Co sputtered sequentially. The annealings were performed at $800^{\circ}C$ using RTP in vacuum ambient and $Ar:H_2$(9:1) ambient, respectively. The specific contact resistivity$(\rho_c)$, sheet resistance$(R_s)$, contact resistance$(R_c)$, transfer length$(L_T)$ were calculated from resistance$(R_T)$ versus contact spacing(d) measurements obtained from TLM(transmission line method) structure. While the resulting measurement values of sample annealed at vacuum ambient were $\rho_c=1.0{\tiimes}10^{-5}{\Omega}cm^2$, $R_c=20{\Omega}$ and $L_T$ = 6.0 those of sample annealed at $Ar:H_2$(9:1) ambient were $\rho_c=4.0{\tiimes}10^{-6}{\Omega}cm^2$, $R_c=4.0{\Omega}$ and $L_T$ = 2.0. The physical properties of contacts were examined using XRD and AES. The results showed that cobalt silicide was formed on SiC and Co was migrated into SiC.

• Proceedings of the KIEE Conference
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• 2002.07b
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• pp.1325-1327
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• 2002

$ITO_{(n)}/Si_{(p)}$ solar cell was fabricated by vaccum deposition method under the resistance heating with substrate temperature kept about 200[$^{\circ}C$] and than their properties are investigated. The cell charateristics can be improved by annealing but are deteriorated at temperature above 650[$^{\circ}C$] for longer than 15[min].

• Journal of the Korean Chemical Society
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• v.45 no.4
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• pp.312-317
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• 2001

7'-Aldehyde-nucleosides analogue (2a, 2c) were synthesized from 6-N-benzoyl-2',3'-O-isopropylideneadenosine and uridine. The condensation of 2 with ethoxycarbonylmethylene Wittig reagent produced the adenosine and uridine analogues containing extended conjugated diene and ethoxycarbonyl group, ethyl-1',5',6',7',8'-pentadeoxy-1'-(adenin-9-yl)-$\beta$-D-ribo-nona-5'(E),7'(E)-dienofuranuronate (4b) and ethyl-1'. 5',6',7',8'-pentadeoxy-1'-(uracil-1-yl)-$\beta$-D-ribo-nona-5'(E),7'-(E)-dienofuranuronate (4c). 9-[8',8'-dibromo-5',6',7',8' -tetradeoxy-$\beta$-D-ribo-octa-5'(E),7'(E)-diene]nucleosides (6b, 6c) were also prepared from 2 with similar method.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.6
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• pp.2311-2316
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• 2010

Three series of copolyterephthalamides having biphenyl-2,2'-diyl structure in the main chain, were synthesized from p-phenylene-containing diamines such as p-phenylene diamine, 4,4'-oxydianiline or 1,4-bis(4-aminophenoxy)benzene, with mixed diacids of terephthalic acid and 2,2'-bibenzoic acid by the direct polycondensation method. The resulting copolymers had inherent viscosities ranging from 0.46 to 0.93dL/g, and most of them could be readily dissolved in polar aprotic solvents including N,N-dimethyl acetamide and N-methyl-2-pyrrolidone. These copolymers had glass transition temperatures between 239 and $326^{\circ}C$, and their 10% weight loss temperatures were recorded in the range of $410{\sim}485^{\circ}C$ in nitrogen atmosphere.

• Solar Energy
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• v.18 no.1
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• pp.91-98
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• 1998

The study of mixed convection in a room with heated bottom surface and various partitions has been numerically investigated using a finite volume method. The parameters studied here are, 50$\overline{Nu}=\overline{Nu_n}{\cdot}(1+c(Re/Gr^{1/2})^d)$, where $\overline{Nu_n}$ corresponds to pure natural convextion.

• YAKHAK HOEJI
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• v.22 no.4
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• pp.238-241
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• 1978

A simple and convenient method of detecting N, N-dimethy laniline (D.M.A.) residues in ampicillin trihydrate (A.T.) was established. D.M.A. was extracted by chloroform from the chloroform presaturated N/10-ammonia water solution of A.T. and chromatographed on silica gel G thin layer. Blue spot appeared in 15minutes after spray of 2, 6-dichloroquinonechlorimide solution was compared with the blue spot of reference concomitantly processed. The developing solvent was prepared by mixing equal volume of cyclohexane and chloroform. To quantitate the amount of D.M.A. in A.T., T.L.C. was performed with the Eastmann Chromatogram sheet, then color density was measured by Cosmo Superclick densitometer. The developing solvent at this time was cyclohexane-chlorofonn (3+7) mixture. The peak areas obtained with the amount of D.M.A ranging from 0.05 to 2.0 .mu.g were linear to color density. Better sensitive results would be available with the densitometer equipped with monochromator.

• Journal of The Korean Astronomical Society
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• v.23 no.1
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• pp.1-13
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• 1990

New uvby photoelectric photometry was carried out for a $\delta$ Scuti variable, HR1170. By applying the Fourier method and the linear least square method, three frequencies were derived: $f_1=10.06134c/d$ ($P_1=0.^d0994$). $f_2=11.91754c/d$ ($P_2=0.^d0839$). $f_3=18.96776c/d$ ($P_3=0.^d0527$). From the observed pulsational constants and from the phase difference and amplitude ratios for color(b-y) and magnitude y. three different pulsation modes (n, l) of $f_1(0,0)$, $f_2(1,2)$, $f_3(3,2)$ are deduced, indicating the existence of nonradial mode in HR1170. Some physical parameters indicate that HR1170 is evolving at the stage of H-shell burning.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.5
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• pp.497-503
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• 2015

It is essential to acquire an accurate and simple technique for extracting the interface trap density ($D_{it}$) in order to characterize the normally-off gate-recessed AlGaN/GaN hetero field-effect transistors (HFETs) because they can undergo interface trap generation induced by the etch damage in each interfacial layer provoking the degradation of device performance as well as serious instability. Here, the frequency-dependent capacitance-voltage (C-V) method (FDCM) is proposed as a simple and fast technique for extracting $D_{it}$ and demonstrated in normally-off gate-recessed AlGaN/GaN HFETs. The FDCM is found to be not only simpler than the conductance method along with the same precision, but also much useful for a simple C-V model for AlGaN/GaN HFETs because it identifies frequency-independent and bias-dependent capacitance components.

• Journal of the Korean Society of Safety
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• v.16 no.1
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• pp.31-36
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• 2001

Surface crack growth characteristics and influence of the stress amplitude in rotary bending fatigue test were evaluated for annealed S35C steel, and than fractal dimensions of fatigue crack paths estimated using the box counting method. The following results that will be helpful to understand the fatigue crack growth mechanism were obtained. (1) Crack growth rate ds/dN and db/dN (s : half crack length at the surface crack, b : crack depth) depended on stress amplitude (${\Delta}{\sigma}/2$), stress intensity factor range (${\Delta}K_A, {\Delta}K_C$) and crack length. (2) At the effect area of 0.3 mm hole notch (s＜0.5 mm) crack growth rate did not depend on these factors. (3) The fractal dimensions (D) increased with stress amplitude (${\Delta}{\sigma}/2$) but decreased with cyclic number.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.916-919
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• 2000

A great deal of research has been done in the field of characterization for piezoelectric thin films after the first report on the measurement for the piezoelectric coefficient of thin films in 1990. The main idea of this research is to provide a distinctive solution for the measurement of both the longitudinal and the transverse piezoelectric d-coefficients, d$\sub$33/ and d$\sub$3l/, of ferroelectric thin films and also thick films. In general, to get these two coefficients of thin films, two different measuring systems are required. Here, we propose the improved method for the evaluation of these two coefficients with single equipment and with the relatively convenient procedure. The two-step loading process of applying the both positive and the negative pressure has been designed to acquire the piezoelectric coefficients. These results have beer calibrated for both the longitudinal and the transverse piezoelectric d-coefficients, d$\sub$33/ and d$\sub$31/, of thin films. In the first stage of the experiments, we have obtained d$\sub$33/ of 108pC/N and d$\sub$31/ of 57pC/N for the PZT thin films.