• Korean Journal of Veterinary Research
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• v.44 no.4
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• pp.625-635
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• 2004

Trichnuris suis does not excrete eggs during larval stage as well as in particular adult stage, It is impossible to diagnose by use of fecal examination method in those periods. Therefore, serological diagnostic method can be very useful for those stages. In order to produce monoclonal antibody, specific somatic and secretory-excretory (SE) antigens of T. suis were identified and analyzed by SDS-PAGE and Western blot. Monoclonal antibody-producing hybridoma cells were cloned, which were made of popliteal lymph node of BALB/c mice immunized with a 45 kDa somatic antigen of T. suis. Five clones (1B9, 2C4, n2C5, 2D7 and 2D8) showing strong responses to T. suis antigens were selected and the isotype identified. All monoclonal antibodies were IgG1 isotype and the light chains were k chain. Established monoclonal antibodies reacted specifically to somatic and SE antigens of T. suis and did not cross-reacted to antigens of ascaris suum, trichuris vulpis, or Trichinella spiralis. The sensitivity of somatic and SE antigens against these monoclonal antibodies were significant (p<0.01) associated with those of positive and negative sera.

• Bulletin of the Korean Chemical Society
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• v.15 no.12
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• pp.1108-1112
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• 1994

25-Acetoxy-26,27,28-trimethoxycalix[4]arene was synthesized by the treatment of calix[4]arene trimethyl ether with acetyl chloride in the presence of NaH. The solution conformation was inferred as a partial cone conformation based on the $^1H$-and $^{13}C$ NMR spectra. The crystal structure has been determined by X-ray diffraction method. The crystals are monoclinic, space group $P2_1$/n, a=8.186 (1), b=17.137 (2), c=19.878 (3) ${\AA}$, ${\beta}$=95.67 (1)$^{\circ}$, Z=4, V=2774.90 ${\AA}^3$, $D_c$= 1.22 g $cm^{-3}$, $D_m$=1.23 g $cm^{-3}$. The intensity data were collected on an Enraf-Noninus CAD-4 Diffractometer with a graphite monochromated $Cu-K{\alpha}$ radiation. The structure was solved by direct method and refined by full-matrix least-squares methods to a final R value of 0.054 for 3675 observed reflections. The molecule possesses a partial cone conformation with one flattened phenyl unit, in which one anisol ring, distal to the ester ring, is inverted. The acetoxyphenyl ring is flattened.

• Transactions of Materials Processing
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• v.20 no.2
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• pp.110-117
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• 2011

The purpose of this work is to develop of a press forming process for mobile phone battery cover as an alternative to the current manufacturing process by laser welding. This press forming process consists of a combination of bending, side pressing and side bending operations. The dimensional error for each process was investigated by finite element(FE) analysis and the Taguchi optimization method. The spreading of the cover width in the side pressing process was adjusted by modifying the blank shape with a notch. The over-bending method was adopted to compensate the spring-back which occurs after bending. Forming experiments were performed to verify the reliability of the developed press forming process. In addition, the strength of the product was evaluated to verify the suitability of the battery cover manufactured with this new press forming process. The results of the forming experiments indicate that the dimensional accuracy of the battery cover is within the required tolerance. The strength of the battery cover was evaluated to 547N which is larger than required strength of 400N.

• Proceedings of the KOSOMBE Conference
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• v.1997 no.05
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• pp.119-122
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• 1997

In this paper, we represented the variation of heart cavity area in the space domain by 3-d rendering. We arranged the 2-d sequence of ultrasonic image acquired in the time domain as volumetric data, and extracted heart cavity region from 3-d data. For the segmentation of 3-d volume data, we extracted the cavity region using the method of expanding the cavity region that is same statistical property. By shading which is using light and object normal vector, we visualized the volume data on image plane.

• Asian-Australasian Journal of Animal Sciences
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• v.22 no.3
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• pp.428-432
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• 2009

40 goat kid ribcages were held for 7 days in storage conditions ($4^{\circ}C$) and used to determine the effects of three different packaging methods (atmospheric air, vacuum and modified atmosphere package (MAP) 10:70:20 mixture of $N_2:O_2:CO_2$) on meat quality of the chops. L* was affected by the packaging method being lighter than MAP chops. The coordinate a* significantly increased during storage time. For MAP-packed chops and those kept in atmospheric air, b* increased markedly during storage time whereas it remained unaffected throughout storage when in vacuum packages. Final pH values ranged from 5.6 to 5.8 and no effects were found for either storage time or packaging method. WHC means were lowest for the three packaging methods on day 7 of storage and highest on day 1. Storage time increased water loss in vacuum treatments. Trained panel colour acceptability was lower at 3, 5 and 7 days than on day 1 of storage for atmospheric air treatment and vacuum packaging, while for the MAP treatment average values on days 5 and 7 were lower than those observed on days 1 or 3. Trained panel odour was lower for atmospheric air and vacuum packages at 3, 5, and 7 days storage than at 1 day, while no differences were found in trained panel odour acceptability for MAP packages. With reference to consumers, the MAP proposed in the present study is the chosen method for storing goat meat, rather than vacuum or atmospheric air packaging.

• Proceedings of the KIEE Conference
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• 2003.07e
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• pp.124-126
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• 2003

The results of investigations of $Ag_2Se$ single crystal is presented. $Ag_2Se$ crystal was grown by the Bridgman method. The $Ag_2Se$ single crystal was an orthorhombic structure with lattice constance a=4.1686 $\AA$, b=9.0425 $\AA$, c=8.0065 $\AA$. Hall effect shows a n-type conductivity in the $Ag_2Se$ single crystal. The electrical resistivity values was $1.25{\times}10^3ohm^{-1}cm^{-1}$ and electron mobility was $-5.48{\times}10^3cm^2/V{\cdot}sec$ at room temperature(RT).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.116-117
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• 2006

I-D ZnO nanostructures were fabricated by thermal evaporation method on Si(100), GaN and $Al_2O_3$ substrates without a catalyst at the reaction temperature of $700^{\circ}C$. Only pure Zn powder was used as a source material and Ar was used as a carrier gas. The shape and growth direction of synthesized ZnO nanostructures is determined by the crystal structure and the lattice mismatch between ZnO and substrates. The ZnO nanostructure on Si substrate were inclined regardless of their substrate orientation. The origin of ZnO/Si interface is highly lattice-mismatched and the surface of the Si substrate inevitably has the $SiO_2$ layer. The ZnO nanostructure on the $Al_2O_3$ substrate was synthesized into the rod shape and grown into particular direction. For the GaN substrate, however, ZnO nanostructure with the honeycomb-like shape was vertically grown, owing to the similar lattice parameter with GaN substrate.

• Journal of Korean Society of Environmental Engineers
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• v.22 no.11
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• pp.1995-2005
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• 2000

The use of heterotrophic denitrification as an alternative method for supplying alkalinity during sulfur-utilizing autotrophic denitrification was evaluated by examining the effects of external carbon source (both type and concentration) and HRT on denitrification efficiency. Concentrations of $NO_3{^-}-N$ and $COD_{Cr}$ of nitrified landfill leachate used for experiment were 700-900mg/L and 900-2500mg/L. respectively, All experiment was conducted with sulfur packed bed reactors (SPBRs) which were operated at $35^{\circ}C$. The fraction of $NO_3{^-}-N$ removed by heterotrophic denitrification ($HDNR_{fraction}$) to balance the alkalinity consumption by autotrophic denitrification varied with the type of external carbon source. When methanol and sodium acetate was added at theoretical HDNRfraction value. 100% denitrification was achieved without alkalinity addition. However, glucose and molasses require $HDNR_{fraction}$ value greater than theoretical value for complete denitrification. The EBCT and volumetric loading rate at which 100% denitrification efficiency could be achieved were 6.76 h and $2.84kg-NO_3{^-}-N/m^3{\cdot}d$, respectively, based on the fact that 100% denitrification occurred within the bottom 11.5 cm layer of the SPBR. The maximum nitrogen removal rate occurred with 89% removal efficiency at loading rate of $5.05kg-NO_3{^-}-N/m^3{\cdot}d$. However, at short EBCT, clogging of SPBR was observed with excess growth of heterotrophic denitrifiers. This problem may be eliminated by back washing or by separating of heterotrophic denitrification from sulfur-utilizing denitrification.

• Journal of Astronomy and Space Sciences
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• v.23 no.3
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• pp.209-216
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• 2006

Ion acoustic solitary wave in a plasma consisting of electrons and ions with an external magnetic field is reinvestigated using the Sagdeev's potential method. Although the Sagdeev potential has a singularity for n < 1, where n is the ion number density, we obtain new solitary wave solutions by expanding the Sagdeev potential up to ${\delta}n^4$ near n = 1. They are compressiv (rarefactive) waves and shock type solitary waves. These waves can exist all together as a superposed wave which may be used to explain what would be observed in the solar wind plasma. We compared our theoretical results with the data of the Freja satellite in the study of Wu et al. (1996). Also it is shown that these solitary waves propagate with a subsonic speed.

• Current Applied Physics
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• v.18 no.11
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• pp.1436-1440
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• 2018

SiN and SiCN film production using plasma-enhanced atomic layer deposition (PE-ALD) is investigated in this study. A developed high-power and high-density multiple inductively coupled plasma (multi-ICP) source is used for a low temperature PE-ALD process. High plasma density and good uniformity are obtained by high power $N_2$ plasma discharge. Silicon nitride films are deposited on a 300-mm wafer using the PE-ALD method at low temperature. To analyze the quality of the SiN and SiCN films, the wet etch rate, refractive index, and growth rate of the thin films are measured. Experiments are performed by changing the applied power and the process temperature ($300-500^{\circ}C$).