• Journal of the Korean Vacuum Society
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• v.17 no.3
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• pp.215-219
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• 2008

The bonding structure and composition of silicon nitride (SiNx) films were investigated by using Fourier transform infrared spectroscopy (FT-IR). SiNx films were deposited on Si substrate at $340^{\circ}C$ using a conventional PECVD system. The compositions of Si and N in SiNx films were confirmed by using Rutherford backscattering spectroscopy (RBS) and photoluminescence (PL) analysis. The surface morphology of SiNx films was also analyzed by using atomic force microscopy (AFM). It was found that the contents of NH(at. %) is the reverse related with those of SiH corresponding to the result of FT-IR. we conclude that a quantitative analysis on SiNx films can be possible through a precise detection of the contents of H in SiNx films with a FT-IR analysis only.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.49 no.3
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• pp.40-50
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• 2012

In this paper we propose the fast CU (Coding Unit) mode decision method. To reduce computational complexity and save encoding time of HEVC, we divided CU, PU (Prediction Unit) and TU (Transform Unit) decision process into two stages. In the first stage, because $2N{\times}2N$ PU mode is mostly selected among $2N{\times}2N$, $N{\times}2N$, $2N{\times}N$, $N{\times}N$ PU modes, proposed algorithm uses only $2N{\times}2N$ PU mode deciding depth of each CU in the LCU (Largest CU). And then, proposed method decides exact PU and TU modes at the depth level which is decided in the first stage. In addition, early skip decision rule is applied to the proposed method to obtain more efficient computational complexity reduction. The proposed method reduces computational complexity of the HEVC encoder by simplifying a CU depth decision method. We could obtain about 50% computational complexity reduction in comparison with HM 3.3 HEVC reference software while bitrate compressed by the proposed algorithm increases only 2%.

• Journal of the Korean Mathematical Society
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• v.32 no.3
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• pp.615-623
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• 1995

Consider a function m defined in $R^n$ and the associated convolution operator T given by the Fourier transform $\hat{T} = m\hat{f}$.

• Journal of applied mathematics & informatics
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• v.1 no.1
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• pp.13-20
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• 1994

The goal of this paper is to obtain some information on the best con-stants in some weak-type inequalities an X-valued martingale and its transform by a real predictable sequence uniformly bounded in absolute value by one.

• Journal of applied mathematics & informatics
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• v.7 no.3
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• pp.959-968
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• 2000

The existence of the operator-valued Feynman integral was established when a Wiener functional is given by a Fourier transform of complex Borel measure [1]. In this paper, I investigate a stability of the Feynman integral with respect to the potentials.

• Journal of applied mathematics & informatics
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• v.24 no.1_2
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• pp.529-534
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• 2007

We obtain an explicit expression of the loss probability for the PR/M/1/K queue when the offered load is strictly less than one.

• Journal of the Semiconductor & Display Technology
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• v.16 no.2
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• pp.49-54
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• 2017

In this paper, recent researches on new and renewable energy have been conducted due to problems such as energy exhaustion and environmental pollution, and new researches on high efficiency and high speed switching are needed. Therefore, we compared the efficiency by using high speed switching devices instead of IGBT which can't be used in high speed switching. The experiment was performed theoretically by applying the same parameters of the high speed switching devices which are the Cool MOS of Infineon Co., SiC C3M of Cree, and GaN FET device of Transform, by implementing the DC-DC boost converter and measuring the actual efficiency for output power and frequency. As a result, the GaN FET showed good efficiency at all switching frequency and output power.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.38A no.12
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• pp.1030-1038
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• 2013

The proposed Alamouti coded OFDM effectively cancels Inter Carrier Interference (ICI) due to frequency offset between distributed antennas. The conventional Alamouti coded OFDM schemes to mitigate ICI utilize N-point Inverse Fast Fourier Transform/Fast Fourier Transform (IFFT/FFT) operations for OFDM modulation and demodulation processes with total N subcarriers. However, the performance degrades because ICI is also repeated in N periods due to the property of N-point IFFT/FFT operation. In order to avoid this problem, null data are used at the subcarriers with large ICI and thus, data rate decreases. The proposed scheme employs 2N-point IFFT/FFT instead of N-point IFFT/FFT in order to increase sampling rate. By increasing sampling rate, the amount of interference significantly decreases because the period of ICI also increases. The proposed scheme increases the data rate and improves the performance by reducing amount of ICI and the number of null-data. Furthermore, the gain of the performance and data rate of the proposed scheme is significant with higher modulation such as 16-Quadarature Amplitude Modulation (QAM) or 64-QAM.

• Journal of the Korean Mathematical Society
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• v.59 no.2
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• pp.235-254
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• 2022

Let ℍⁿ be the Heisenberg group and Q = 2n + 2 be its homogeneous dimension. Let 𝓛 = -∆_ℍⁿ + V be the Schrödinger operator on ℍⁿ, where ∆_ℍⁿ is the sub-Laplacian and the nonnegative potential V belongs to the reverse Hölder class $B_{q_1}$ for q₁ ≥ Q/2. Let H^p_𝓛(ℍⁿ) be the Hardy space associated with the Schrödinger operator 𝓛 for Q/(Q+𝛿₀) < p ≤ 1, where 𝛿₀ = min{1, 2 - Q/q₁}. In this paper, we consider the Hardy type estimates for the operator T_𝛼 = V^𝛼(-∆_ℍⁿ + V )^-𝛼, and the commutator [b, T_𝛼], where 0 < 𝛼 < Q/2. We prove that T_𝛼 is bounded from H^p_𝓛(ℍⁿ) into L^p(ℍⁿ). Suppose that b ∈ BMO^𝜃_𝓛(ℍⁿ), which is larger than BMO(ℍⁿ). We show that the commutator [b, T_𝛼] is bounded from H¹_𝓛(ℍⁿ) into weak L¹(ℍⁿ).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.247-250
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• 2001

We studied optical properties of SiON thin-film in the applications of optical waveguide. SiON thin-film was grown in $300^{\circ}C$ by PECVD(plasma enhanced chemical vapor deposition) system. The change of SiON thin-film composition and refractive Index was studied as a function of varying $NH_3$ gas flow rate. As $NH_3$ gas flow rate was increased, Quantity of N and refractive index were increased at the same time. By the results, we could form the SiON thin-film to use of a waveguide with refractive index of 1.6. We analyzed the conditions of the thin-film with FTIR(fourier transform infrared) and OES (optical emission spectroscopy). N-H bonding($3390cm^{-1}$ ) can be removed by thermal annealing. And we could observe the SiH bonding state and quantity by OES analysis in $SiH_4$