• Current Optics and Photonics
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• v.3 no.6
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• pp.510-515
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• 2019

In this paper, we introduce a 1.3-㎛ 25-GHz waveguide-integrated vertical PIN type Ge-on-Si photodetector fabricated using a multi-project wafers service based on fringing field analysis in the depletion region. In general, 1.3-㎛ photodetectors fabricated using a commercial foundry service can achieve limited bandwidths because a significant amount of photo-generated carriers are located within a few microns from the input along the device length, and they are influenced by the fringing field, leading to a longer transit time. To estimate the response time, we calculate the fringing field in that region and the transit time using the drift velocity caused by the field. Finally, we compare the estimated value with the measured one. The photodetector fabricated has a bandwidth of 20.75 GHz at -1 V with an estimation error of <3 GHz and dark current and responsivity of 110 nA and 0.704 A/W, respectively.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2000.06a
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• pp.1071-1077
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• 2000

Recently, several attempts have been made to apply high Tc superconductor bearings of thrust type to flywheel energy storage system (FESS) throughout the world. Radial type superconductor bearings, however, have never been tried to the real FESS. KEPRI has developed its own radial type bearings and is now currently applying them to a FESS designed by KIMM, for the first time. In this paper preliminary test results of bearing performance and dynamic behavior of the flywheel rotor system mounted on them are presented. The dynamic properties, i.e, stiffness and damping, of the superconductor bearings were experimentally estimated using the static loading test as well as the impact test. The test revealed that stiffness value of the present superconductor bearings is about 67,700N/m and the damping value 29Ns/m. It was also found out that these bearings have some levitation drift problems due to excessive vibrations encountered while passing through the critical speeds. With recommend backup bearings to limit the vibration amplitudes of the rotor it is predicted that the flywheel rotor will show stable operations in the design speed range.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.2
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• pp.33-37
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• 2003

The new textured surface epitaxial base(TSEB) cell as a high efficiency Si solar cell was fabricated and its eletro-optical characteristics were investigated. The fabricated device showed the open circuit voltage of 0.62 V, the short circuit current of 40 mA, the fill factor of 0.7, and the efficiency of 16% under the incident light of AM-1 100 mW/$cm^2$. The TSEB cell proposed in this paper has the structural superiority in the fabrication of high efficiency solar cell due to the carrier drift transport in the optical absorption region and the formation of back surface field by $P^-/P^+$ epitaxial base, and the low emitter series resistance by insertion of $n^+$ buried contact.

• Journal of Ocean Engineering and Technology
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• v.11 no.1
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• pp.96-96
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• 1997

This paper presents a Inertial Measuring Unit(IMU) for motion measurement of an AUV. The IMU is composed of three parts: inertial sensors with three servo accelerometers and three rate gyros, an analog/digital interface board, and a signal processing board with TMS320C31 DSP processor. The IMU is a class of strap-down inwetial navigation system does not applicable directly to the navigation system in consequence of the AUV and integrated sensors for an integrated navigation system of the AUV. Fast calculstion of direction cosine matrix for the coordinate transformation body to reference is obtained through the DSP processor. A switching algotrithm is used to lessen the low frequency drift effect of the gyros in the vertical plane with use of low pass filtering of the signal of the accelerometers.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.8
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• pp.463-467
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• 2000

In this paper, the new LIGBT structures with trap injection are proposed to improve switching characteristics of the conventional SOI LIGBT. The Simulations are performed in order to investigate the effects of the positiion, whidth and concentration of trap injection region with a reduced minority carrier lifetime using 2D device simulator MEDICI. Their electrical characteristics are analyzed and the optimum design parameters are extracted. As a result of simulation, the turn off time for the model A with the trap injection is $0.78\mus$. These results indicate the improvement of about 2 times compared with the conventional SOI LIGBT because trap injection prevents minority carriers which is stored in the n-drift region during turn off switching. The latching current is $1.5\times10^{-4}A/\mum$ and forward blocking voltage is 168V which are superior to those of conventional structure. It is shown that the trap injection is very effective to reduce the turn off time with a little increasing of on-state voltage drop if its design and process parameters are optimized.

• Structural Engineering and Mechanics
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• v.39 no.4
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• pp.499-520
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• 2011

The effectiveness of a technique for the repair of reinforced concrete members in combination with a technique for the repair of masonry walls of infilled frames, damaged due to cyclic loading, is experimentally investigated. Three single - story, one - bay, 1/3 - scale frame specimens are tested under cyclic horizontal loading, up to a drift level of 4%. One bare frame and two infilled frames with weak and strong infills, respectively, have been tasted. Specimens have spirals as shear reinforcement. The applied repair technique is mainly based on the use of thin epoxy resin infused under pressure into the crack system of the damaged RC joint bodies, the use of a polymer modified cement mortar with or without a fiberglass reinforcing mesh for the damaged infill masonry walls and the use of CFRP plates to the surfaces of the damaged structural RC members, as external reinforcement. Specimens after repair, were retested in the same way. Conclusions concerning the effectiveness of the applied repair technique, based on maximum cycles load, loading stiffness, and hysteretic energy absorption capabilities of the tested specimens, are drawn and commented upon.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.8B
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• pp.1469-1476
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• 2000

We have to consider the drain current as consisting of two components the vertical electric field and the longitudinal electric field because the drain current is almost totally due to the presence of drift in strong inversion of n-MOS FET. Especially the mobility of electrons in the inversion layer is smaller than the bulk mobility because the vertical electric field component that is generated by the effect of the gate voltage is perpendicular to the direction of normal current flow. By the multi-box segmentation technical method that are proposed in this paper we calculated the inversion layer depth and analyzed the vertical electric field component which has an large influence on mobility model.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.12-16
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• 2009

Current sensing in power semiconductors involves sensing of over-current in order to protect the device from harsh conditions. This technique is one of the most important functions in stabilizing power semiconductor device modules. The sense FET is very efficient method with low power consumption, fast sensing speed and accuracy. In this paper, we have analyzed the characteristics of proposed sense FET and optimized its electrical characteristics to apply conventional 450 V power MOSFET by numerical and simulation analysis. The proposed sense FET has the n-drift doping concentration $1.5{\times}10^{14}cm^{-3}$, size of $600{\um}m^2$ with $4.5\;{\Omega}$, and off-state leakage current below $50{\mu}A$. We offer the layout of the proposed sense FET to process actually. The offerd design and optimization methods are meaningful, which the methods can be applied to the power devices having various breakdown voltages for protection.

• Structural Engineering and Mechanics
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• v.53 no.2
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• pp.355-372
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• 2015

This paper identifies the effects of infill wall existence and arrangement in the seismic response of steel frame structures. The methodology followed was based on the utilisation of overall seismic response indicators that distil the complexity of structural response in a single value hence enabling their straightforward comparative and statistical post process. The overall structure damage index after Park/Ang ($OSDI_{PA}$) and the maximum inter-story drift ratio (MISDR) have been selected as widely utilized structural seismic response parameters in contemporary state of art. In this respect a set of 225 Greek antiseismic code (EAK) spectrum compatible artificial accelerograms have been created and a series of non-linear dynamic analyses have been executed. Data were obtained through nonlinear dynamic analyses carried on an indicative steel frame structure with 5 different infill wall topologies. Results indicated the significant overall contribution of infill walls with a reduction that ranged 35-47% of the maximum and 74-81% of the average recorded $OSDI_{PA}$ values followed by an overall reduction of 64-67% and 58-61% for the respective maximum and average recorded MISDR values demonstrating the relative benefits of infill walls presence overall as well as localised with similar reductions observed in 1st level damage indicators.

• ETRI Journal
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• v.35 no.4
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• pp.632-637
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• 2013

In this paper, we propose a superjunction trench gate MOSFET (SJ TGMOSFET) fabricated through a simple p-pillar forming process using deep trench and boron silicate glass doping process technology to reduce the process complexity. Throughout the various boron doping experiments, as well as the process simulations, we optimize the process conditions related with the p-pillar depth, lateral boron doping concentration, and diffusion temperature. Compared with a conventional TGMOSFET, the potential of the SJ TGMOSFET is more uniformly distributed and widely spread in the bulk region of the n-drift layer due to the trenched p-pillar. The measured breakdown voltage of the SJ TGMOSFET is at least 28% more than that of a conventional device.