• Proceedings of the KIEE Conference
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• 2001.07e
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• pp.76-79
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• 2001

Energy distribution function in $SiH_4$ has been analysed over the E/N range $0.5{\sim}300Td$ and Pressure value 0.5, 1.0, 2.5 Torr by a two-term approximation Boltzmann equation method and by a Monte Carlo simulation. The motion has been calculated to give swarm parameters for the electron drift velocity, diffusion coefficient, electron ionization, mean energy and the electron energy distribution function. The electron energy distribution function has been analysed in $SiH_4$ at E/N=30, 50Td for a case of the equilibrium region in the mean electron energy and respective set of electron collision cross sections.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.10a
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• pp.33-35
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• 1988

From the study of mechanism of electrical conduction of film which is made from Polyethylene Terephthalate at very high temperature which is larger than low electric field and glass transition point, we find that there is a extraordinary non ohmic region (I∝V$^n$, 0

• Proceedings of the KIEE Conference
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• 2005.10a
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• pp.97-100
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• 2005

This paper describes the electron transport characteristics in SiH4 has been analysed over the E/N range 0.5${\sim}$300[Td] and Pressure value 0.5, 1, 2.5 [Torr] by a two-term approximation Boltzmann equation method and by a Monte Carlo simulation. The motion has been calculated to give swarm parameters for the electron drift velocity, diffusion coefficient, electron ionization, mean energy and the electron energy distribution function. The electron energy distribution function has been analysed in $SiH_4$ at E/N=30, 50[Td] for a case of the equilibrium region in the mean electron energy and respective set of electron collision cross sections. The results of Boltzmann equation and Monte carlo simulation have been compared with experimental data by Pollock, Ohmori, cottrell and Walker.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.165-168
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• 1999

The electron transport coefficients in mixture gas includes SF/sub 6/ is analysed in range of E/N values from 60∼800(Td) by the Boltzmann method that using a set of electron collision crass sections determined by the researchers. Swarm parameters in the Boltzmann method simulation such as electron drift velocity, ionization and electron attachment coefficients is in nearly agreement with the respective experimental and theoretical for a range of E/N.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.578-580
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• 2005

Energy distribution function for electrons in SF6-Ar mixtures gas used by MCS-BEq algorithm has been analysed over the E/N range 30~300[Td] by a two term Boltzmann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2[%] and 0.5[%] $SF_6$-Ar mixtures were measured by TOF method, The results show that the deduced electron drift velocities, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with theoretical for a rang of E/N values. The results obtained from Boltzmann equation method and Monte Carlo simulation have been compared with present and previously obtained data and respective set of electron collision cross sections of the molecules.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.51 no.1
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• pp.28-32
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• 2002

Energy distribution function for electrons in $SF_6+Ar$ mixtures gas used by MCS-BEq algorithm bas been analysed over the E/N range 30-300[Td] by a two term Boltzmann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2[%] and 0.5[%] $SF_6+Ar$ mixtures were measured by time-of-flight(TOF) method. The results show that the deduced electron drift velocities, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with theoretical for a rang of E/N values.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.176-176
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• 2003

The effects of oxide thickness and gate length of MgO/GaN metal oxide semiconductor field effect transistors (MOSFETs) on I-V, threshold voltage and breakdown voltage characteristics were examined using a drift-diffusion model. The saturation drain current scales in an inverse logarithmic fashion with MgO thickness and is < 10$^{-3}$ A.${\mu}{\textrm}{m}$$^{-1}$ for 0.5 ${\mu}{\textrm}{m}$ gate length devices with oxide thickness > 600 $\AA$ or for all 1 ${\mu}{\textrm}{m}$ gate length MOSFETs with oxide thickness in the range of >200 $\AA$. Gate breakdown voltage is > 100 V for gate length >0.5 ${\mu}{\textrm}{m}$ and MgO thickness > 600 $\AA$. The threshold voltage scales linearly with oxide thickness and is < 2 V for oxide thickness < 800 $\AA$ and gate lengths < 0.6 ${\mu}{\textrm}{m}$. The GaN MOSFET shows excellent potential for elevated temperature, high speed applications.

• Electrical & Electronic Materials
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• v.10 no.4
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• pp.342-348
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• 1997

In this paper, the behavior of electron swarm parameters and energy distribution function of the discharge under high E/N condition in e$^{-10}$ -CF$_{4}$ gas have been analysed over the E/N range from 1-300(Td) by the MCS and BEq methods using set of electron collision cross section determined by the authors. The swarm parameters and energy distribution function have been calculated for the pulsed Townsend, steady-state Townsend and Time of Flight methods. The results gained that the value of electron swarm parameters such as the electron drift velocity, the electron ionization and attachment coefficients and longitudinal diffusion coefficients in agreement with the experimental and theoretical data for a range of E/N. The electron energy distribution function has been explained and analysed in e$^{-10}$ -CF$_{4}$ at E/N : 5, 10, 100, 200, 300(Td) for a case of the equilibrium region in the mean electron energy and respective set of electron collision cross sections. The validity of the results has been confirmed by TOF and SST methods.

• Journal of the Korean Magnetics Society
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• v.22 no.2
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• pp.45-48
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• 2012

Feed-back type 3-axis flux-gate magnetometer using Co-based amorphous ribbon (Metglass$^{(R)}$2714A) was constructed in this work. Measuring range of magnetic field and frequency were ${\pm}100\;{\mu}T$ and dc~10 Hz respectively. For the interface to computer, microcontroller and 24 bit ADC (Analog to Digital Converter) were employed and resolution of digital output was 0.1 nT. Magnetometer noise of analog output was 5 pT/$\sqrt{Hz}$ at 1 Hz. Digital output of the magnetometer showed linearity of $1{\times}10^{-4}$ and the offset drift was smaller than 0.2 nT during 1 h.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.53 no.2
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• pp.65-69
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• 2004

This paper calculates and gives the analysis of electron swarm transport coefficients as described electric conductive characteristics of pure Ar, pure $SiH_4$, Ar-$SiH_4$ mixture gases($SiH_4$-0.5%, 2.5%, 5%) over the range of E/N = 0.01~300[Td], P = 0.1, 1, 5.0 [Torr] by Monte Carlo the backward prolongation method of the Boltzmann equation using computer simulation without using expensive equipment. The results have been obtained by using the electron collision cross sections by TOF, PT, SST sampling, compared with the experimental data determined by the other author. It also proved the reliability of the electron collision cross sections and shows the practical values of computer simulation. Electron swann parameters in argon were drastically changed by adding a small amount of mono-silane. The electron drift velocity in these mixtures showed unusual behaviour against E/N. It had negative slope in the medium range of E/N, yet the slope was not smooth but contained a small hump. The longitudinal diffusion coefficient also showed a corresponding feature in its dependence on E/N. A two-tenn approximation of the Boltzmann equation analysis and Monte Carlo simulation have been used to study electron transport coefficients.