• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.11
• /
• pp.912-916
• /
• 2001

Fluxmeter is a measuring instrument the magnetic flux intensity by means of an integration of the voltage induced to a search coil to unit time. It also is required to a precise integrator since the voltage induced to a search coil has a differential value of the flux ${\Phi}$ to unit time. In this study, a bias current which is a main problem of the integrator in a drift troublesome depending on the temperature of a FET is investigated. We have confirmed that the temperature dependence of both the bias current of a integrator using the FET and the reversal saturated current of the minor carrier in a P-N junction of a semiconductor were the same. The property of a commercial integrator goes rapidly down with increasing temperature. The bias current of a FET is increased twice as much with 10$^{\circ}C$ increment. As a result, the low drift integrator could be developed by setting the lower temperature up with a pottier device.

• Transactions on Semiconductor Engineering
• /
• v.1 no.1
• /
• pp.9-13
• /
• 2023

An AlGaN/GaN heterojunction-based hydrogen sensor with SnO₂ nanoparticles/Pd catalyst layer was fabricated for room-temperature hydrogen detection. The fabricated sensor exhibited unstable drift in standby current when it was operated at room temperature. The instability in the sensing signal was dramatically improved when the sensor was operated under UV illumination.

• Proceedings of the KIEE Conference
• /
• 2006.10b
• /
• pp.159-162
• /
• 2006

In this paper energy distribution function in $SiH_4$ has been analysed over the E/N range 0.5${\sim}$300Td and Pressure value 0.5, 1.0, 2.5 Torr by a two-term approximation Boltzmann equation method and by a Monte Carlo simulation. The motion has been calculated to give swarm parameters for the electron drift velocity, diffusion coefficient, electron ionization, mean energy and the electron energy distribution function. The electron energy distribution function has been analysed in $SiH_4$ at E/N=30, 50Td for a case of the equilibrium region in the mean electron energy and respective set of electron collision cross sections. The results show that the deduced electron drift velocities, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with theoretical for a rang of E/N values.

• Journal of Korean Port Research
• /
• v.9 no.1
• /
• pp.57-63
• /
• 1995

In this paper we examine the mass transport within the boundary layer near the sea bottom. The fluid domain is seperated into inner and outer region of boundary layers. In outer region, the wave field is assumed to be inviscid and irrotational. When the incident waves enter the arrays of circular cylinders, the scattering of water waves by an array of N bottom mounted vertical circular cylinders is solved using the method proposed by Linton & Evans under the potential theory. In inner region, the Navier-Stokes equation must be satisfied with boundary conditions at the boundary later and bottom is to be represented by the sum of the Eulerian mean drift and the Stokes' drift.

• Proceeding of EDISON Challenge
• /
• 2014.03a
• /
• pp.498-500
• /
• 2014

EDISON 나노물리 사이트에 탑재된 Drift-Diffusion 기반 bulk P/N Junction Diode 특성 해석용 SW를 이용해 P-N접합의 특성을 파악해보았다. n과 p영역에서의 순수 도너와 억셉터 농도를 통해 내부 전위 장벽을 구한다. 구한 내부 전위 장벽을 통해 공핍폭 W를 구할 수 있다. 이 논문에서는 일방접합의 공핍영역폭을 표현하는 식과 시뮬레이션을 통해 얻어진 공핍영역폭을 비교 분석하였다.

• Journal of information and communication convergence engineering
• /
• v.9 no.5
• /
• pp.587-590
• /
• 2011

The absence of deep traps for electrons in the spectrum of $As_{40}Se_{30}S_30$ localized states films obtained by ion sputtering was determined. Bipolar drift of charge carriers was found in amorphous $As_{40}Se_{30}S_30$ films of chalcogenide glassy semiconductors, obtained by ion-plasma sputtering of high-frequency, unlike the films of these materials obtained by thermal evaporation.

• Electrical & Electronic Materials
• /
• v.9 no.6
• /
• pp.564-571
• /
• 1996

We calculated the drift-velocities of electrons and holes of I $n_{0.53}$(A $l_{x}$G $a_{1-x}$ )$_{0.47}$As, which is used for semiconductor materials of high performance HBTs, along with the various doping concentrations and Al mole fractions as well as the electric fields by Monte Carlo experiment. Especially, for the valence bands the accuracy of hole-drift-velocity was improved in the consideration of intervalley scattering due to the inelastic scattering of acoustic phonon. From the results the empirical formulas of the low- and high field mobility of electrons and holes were extracted by using nonlinear least square fitting method. The accuracy of the formulas was proved by comparing the formula of low-field electron mobility as well as drift-velocity of I $n_{0.53}$ G $a_{0.47}$As and of low-field hole mobility of GaAs with the measured values, where the error was below 10%. For the high-field mobilities of electron and hole the results calculated by the formulas were very well matched with the MC experimental results except at the narrow field range where the electrons produced the velocity overshoot and the corresponding error was about 30%.0%. 30%.0%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07b
• /
• pp.1102-1105
• /
• 2003

Energy distribution function for electrons in $SF_6$-Ar mixtures gas used by MCS-BEq algorithm has been analysed over the E/N range $30{\sim}300[Td]$ by a two term Boltzmann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2(%) and 0.5(%) $SF_6$-Ar mixtures were measured by time-of-flight(TOF) method, The results show that the deduced electron drift velocities, Electrons Drift Velocities for a rang of E/N values. As a consequence, it was known that the spatial growth rates and the dielectric behaviors in $SF_6$-Ar mixtures are strongly dependent on the addition rate of $SF_6$ gas but the transport coefficients of electrons are insensitive to the addition rate of $SF_6$ gas. The results obtained from Boltzmann equation method and Monte Carlo simulation have been compared with present and previously obtained data and respective set of electron collision cross sections of the molecules.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1997.11a
• /
• pp.167-172
• /
• 1997

The electron swarm parameters and Energy distribution function have been calculated for electrons motion through CH$_4$ pure gas under the action of uniform electric field for 0.1$\leq$E/N(Td)$\leq$300, at the 300( $^{\circ}$K), using MCS method and Boltzmann transport equation. And then the resulting values of electron drift velocity were compared to experimental data and adjustment made in assumed cross sections until good agreement was obtained. The electron drift velocity is very useful in the fields of study relating to the conductive and dielectric phenomena of gas medium. The electron energy distribution in gas discharge are generally nonmaxwellian , and must be calculated by a numerical solution of the Boltzmann equation which takes in the elastic and inelastic collisions. To analyze the physical phenomena and properties (or electron swarm motion in a gas under the influence of an electric field, the energy distribution function of electrons and the theoretical deriveration of the electron drift velocity are calculated by the Backward Prolongation with respect to the Boltzmann transport equation as a parameter of E/N(Td).

• The Transactions of the Korean Institute of Power Electronics
• /
• v.3 no.2
• /
• pp.125-130
• /
• 1998

This paper describes a novel flux calculator for the estimation of real rotor flux angle which is indispensable to the field oriented control of induction motors. A pure integrator is used to estimate the real rotor flux precisely from voltage and current information. The proposed flux calculator adopts the new drift compensation method to overcome the drift problem of pure integrator. The motor speed is calculated using estimated flux angle and estimated slip frequency. The performance of this approach is verified through the experiment. The experimental results shows stable operation of proposed system even below 1/100 of rated speed.