The Characteristics of $GaAs_{0.35}P_{0.65}$ Epitaxial Layer According to in-situ doping of $NH_3$ gas
(In-situ $NH_3$ doping에 따른 $GaAs_{0.35}P_{0.65}$ 에피막의 특성)
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- Proceedings of the KIEE Conference
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- 1998.07d
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- pp.1249-1251
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- 1998