• Korean Chemical Engineering Research
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• 제49권5호
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• pp.505-509
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• 2011

가시광 영역에서 활성을 보이는 광촉매는 태양광을 이용한 광촉매분해, $CO_2$ 변환을 위한 융합 시스템과 물로부터 수소를 생산하는 분야에 있어서의 높은 실현 가능성 때문에 최근 많은 주목을 받고 있다. 현재의 합성방법은 높은 비용과 비재현성, 도핑 물질의 양을 조절하는 어려움 그리고 대량 생산의 불안정성 때문에 상용화의 어려움을 겪고 있다. 본 총설에서는 케임브리지 대학 Lambert 그룹에서 개발된 재현가능하고 컨트롤이 용이한 자연광 활성 음이온 도핑 $TiO_2$ 광촉매에 관해서 요약하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제1권4호
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• pp.202-208
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• 2001

In Recent results suggested that doping $Ta_2O_5$ with a small amount of $TiO_2$ using standard ceramic processing techniques can increase the dielectric constant of $Ta_2O_5$ significantly. In this paper, this concept is studied using RTCVD (Rapid Thermal Chemical Vapor Deposition). Ti-doped $Ta_2O_5$ films are deposited using $TaC_{12}H_{30}O_5N$, $C_8H_{24}N_4Ti$, and $O_2$ on both Si and $NH_3$-nitrided Si substrates. An $NH_3$-based interface layer at the Si surface is used to prevent interfacial oxidation during the CVD process and post deposition annealing is performed in $H_2/O_2$ ambient to improve film quality and reduce leakage current. A sputtered TiN layer is used as a diffusion barrier between the Al gate electrode and the $TaTi_xO_y$ dielectric. XPS analyses confirm the formation of a ($Ta_2O_5)_{1-x}(TiO_2)_x$ composite oxide. A high quality $TaTi_xO_y$ gate stack with EOT (Equivalent Oxide Thickness) of $7{\AA}$ and leakage current $Jg=O.5A/textrm{cm}^2$ @ Vg=-1.0V has been achieved. We have also succeeded in forming a $TaTi_x/O_y$ composite oxide by rapid thermal oxidation of the as-deposited CVD TaTi films. The electrical properties and Jg-EOT characteristics of these composite oxides are remarkably similar to that of RTCVD $Ta_2O_5, suggesting that the dielectric constant of $Ta_2O_5$ is not affected by the addition of $TiO_2$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.392-392
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• 2011

현재의 태양전지에 사용되는 wafer는 원가저감을 위해 점점 얇아지고 있는 추세이다. 하지만 wafer가 얇아질수록 장파장 영역의 광자는 충분히 활용할 수 없게 된다. 대부분의 광자는 50um 지점에 도달하였을 때 그 역할을 다하고 소멸하게 되며, 특히 800nm 이상의 장파장에 대한 generation rate는 wafer 두께에 따라 급격한 차이를 보이게 된다. 따라서 장파장 영역의 광자를 효율적으로 사용할 뿐만 아니라 원가 저감을 위해 더욱 얇아지고 있는 추세의 wafer의 장파장 이용을 보상하기 위해서 TCO를 이용한 back-reflector의 역할은 가장 좋은 해결책이 될 것이다. 본 연구에서는 Macleod를 이용하여 ZnO, Al-doped ZnO, TiN, TiO2와 같은 다양한 TCO 물질에 대한 다양한 simulation을 실시 하여 reflectance 특성을 알아보았다. 상기 simulation결과로써 Al-doped ZnO가 가장 reflectance 특성이 좋게 나타났었으며 이를 이종접합 태양전지에 적용하여 광학적 및 전기적 특성 변화에 대해서 분석하였다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 추계학술대회 초록집
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• pp.80.1-80.1
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• 2010

A strontium titanate ($SrTiO_3$)-based material with a perovskite structure is considered to be one of the promising alternatives to $LaCrO_3$-based materials since $SrTiO_3$ perovskite shows a high chemical stability under both oxidizing and reducing atmospheres at high temperatures. $SrTiO_3$ materials exhibit an n-type semiconducting behavior when it is donor-doped and/or exposed to a reducing atmosphere. In this work, $Sr_{1-x}La_xTi_{1-y}M_yO_3$ materials doped with $La^{3+}$ in A-sites and aliovalent transition metal ions ($M^{n+}$) in B-sites were synthesized by the modified Pechini method. The X-ray diffraction analysis indicated that the materials synthesized by the Pechini process exhibited a single curbic perovskite-type structure without any impurity phases, and are tolerant, to some extent, to cation doping. The sintering behaviors of $Sr_{1-x}La_xTi_{1-y}M_yO_3$ in $H_2/N_2$ and air were characterized by dilatometry and microstructural observations. The electrical conduction mechanism and the dopant effect are discussed based on the defect structures and the electrical conductivities measured at various oxygen partial pressures and temperatures.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.307-307
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• 2012

In this study, we investigated that the resistance switching characteristics of Al-doped MgOx films with increasing Al doping concentration and increasing film thickness. The Al-doped MgOx based ReRAM devices with a TiN/Al-doped MgOx/Pt/Ti/SiO2 were fabricated on Si substrates. The 5 nm, 10 nm, and 15 nm thick Al-doped MgOx films were deposited by reactive dc magnetron co-sputtering at $300^{\circ}C$ and oxygen partial ratio of 60% (Ar: 16 sccm, O2: 24 sccm). Micro-structure of Al-doped MgOx films and atomic concentration were investigated by XRD and XPS, respectively. The Al-doped MgOx films showed set/reset resistance switching behavior at various Al doping concentrations. The process voltage of forming/set is decreased and whereas the initial current level is increased with decreasing thickness of Al-doped MgOx films. Besides, the initial current of Al-doped MgOx films is increased with increasing Al doping concentration in MgOx films. The change of resistance switching behavior depending on doping concentration was discussed in terms of concentration of non-lattice oxygen of Al-doped MgOx.

• 한국재료학회지
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• 제29권5호
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• pp.328-335
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• 2019

Nb-doped $TiO_2$(NTO) coated NiCrAl alloy foam for hydrogen production is prepared using ultrasonic spray pyrolysis deposition(USPD) method. To optimize the size and distribution of NTO particles based on good physical and chemical stability, we synthesize particles by adjusting the weight ratio of the Nb precursor solution(5 wt%, 10 wt% and 15 wt%). The morphological, chemical bonding, and structural properties of the NTO coated NiCrAl alloy foam are investigated by X-ray diffraction(XRD), X-ray photo-electron spectroscopy(XPS), and Field-Emission Scanning Electron Microscopy(FESEM). As a result, the samples of controlled Nb weight ratio exhibit a common diffraction pattern at ${\sim}25.3^{\circ}$, corresponding to the(101) plane, and have chemical bonding(O-Nb=O) at 534 eV. The NTO particles with the optimum weight ratio of N (10 wt%) show a uniform distribution with a size of ~18.2-21.0 nm. In addition, they exhibit the highest corrosion resistance even in the electrochemical stability estimation. As a result, the introduction of NTO coated NiCrAl alloy foam by USPD improves the chemical stability of the NiCrAl alloy foam by protecting the direct electrochemical reaction between the foam and the electrolyte. Thus, the optimized NTO coating can be proposed for excellent protection of NiCrAl alloy foam for hydrocarbon-based steam methane reforming(SMR).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.288-288
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• 2012

In this study, we investigated that the resistance switching characteristics of W-doped NbOx films with increasing W doping concentration. The W-doped NbOx based ReRAM devices with a TiN/W-doped NbOx/Pt/Ti/SiO2 were fabricated on Si substrates. The 50 nm thick W-doped NbOx films were deposited by reactive dc magnetron co-sputtering at $400^{\circ}C$ and oxygen partial pressure of 35%. Micro-structure of W-doped NbOx films and atomic concentration were investigated by XRD, TEM and XPS, respectively. The W-doped NbOx films showed set/reset resistance switching behavior at various W doping concentrations. The process voltage of set/reset is decreased and whereas the initial current level is increased with increasing W doping concentration in NbOx films. The change of resistance switching behavior depending on doping concentration was discussed in terms of concentration of metallic tungsten of oxygen of W-doped NbOx.

• 한국세라믹학회지
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• 제53권4호
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• pp.393-399
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• 2016

We have successfully fabricated 3D (3-dimensional) nanostructures of $TiO_2$ coated with a $g-C_3N_4$ layer via hydrothermal and sintering methods to enhance photoelectrochemical (PEC) performance. Due to the coupling of $TiO_2$ and $g-C_3N_4$, the nanostructures exhibited good performance as the higher conduction band of $g-C_3N_4$, which can be combined with $TiO_2$. To fabricate 3D nanostructures of $g-C_3N_4/TiO_2$, $TiO_2$ was first grown as a double layer structure on FTO (Fluorine-doped tin oxide) substrate at $150^{\circ}C$ for 3 h. After this, the $g-C_3N_4$ layer was coated on the $TiO_2$ film at $520^{\circ}C$ for 4 h. As-prepared samples were varied according to loading of melamine powder, with values of loading of 0.25 g, 0.5 g, 0.75 g, and 1 g. From SEM and TEM analysis, it was possible to clearly observe the 3D sample morphologies. From the PEC measurement, 0.5 g of $g-C_3N_4/TiO_2$ film was found to exhibit the highest current density of $0.12mA/cm^2$, along with a long-term stability of 5 h. Compared to the pristine $TiO_2$, and to the 0.25 g, 0.75 g, and 1 g $g-C_3N_4/TiO_2$ films, the 0.5 g of $g-C_3N_4/TiO_2$ sample was coated with a thin $g-C_3N_4$ layer that caused separation of the electrons and the holes; this led to a decreasing recombination. This unique structure can be used in photoelectrochemical applications.

• 한국재료학회지
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• 제33권6호
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• pp.229-235
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• 2023

An all-perovskite oxide heterostructure composed of SrSnO₃/Nb-doped SrTiO₃ was fabricated using the pulsed laser deposition method. In-plane and out-of-plane structural characterization of the fabricated films were analyzed by x-ray diffraction with θ-2θ scans and φ scans. X-ray photoelectron spectroscopy measurement was performed to check the film's composition. The electrical transport characteristic of the heterostructure was determined by applying a pulsed dc bias across the interface. Unusual transport properties of the interface between the SrSnO₃ and Nb-doped SrTiO₃ were investigated at temperatures from 100 to 300 K. A diodelike rectifying behavior was observed in the temperature-dependent current-voltage (IV) measurements. The forward current showed the typical IV characteristics of p-n junctions or Schottky diodes, and were perfectly fitted using the thermionic emission model. Two regions with different transport mechanism were detected, and the boundary curve was expressed by ln I = -1.28V - 13. Under reverse bias, however, the temperature- dependent IV curves revealed an unusual increase in the reverse-bias current with decreasing temperature, indicating tunneling effects at the interface. The Poole-Frenkel emission was used to explain this electrical transport mechanism under the reverse voltages.

• 한국세라믹학회지
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• 제28권4호
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• pp.261-268
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• 1991

The dielectric properties and microstructure of SrTiO3-based grain boundary layer (GBL) capacitor were investigated, and SrTiO3 GBL capacitor was made by penetrating the Frit (PbO-Bi2O3-B2O3 system). The Nb2O5-doped SrTiO3 ceramics were fired for 4-hours, at 145$0^{\circ}C$ in H2-N2 atomsphere to get semiconductive ceramics. The grain size of SrTiO3 sintered at reduction atmosphere had increased as the amount of Nb2O5 increases and then decreased as the amount of Nb2O5 exceeded 0.2 mole%. Insulating reagents which contained PbO-Bi2O3-B2O3 system frit and oxide mixture were printed on the each semiconductive ceramics and fired at varying temperature and for different holding time. The optimum dielectric properties could be obtained by second heat treatment at 110$0^{\circ}C$ for 1 hour, when frit paste was printed. A SrTiO3-based GBLC had the apparent permitivity of about 3.2$\times$104, the dielectric loss of 0.01~0.02 and the stable temperature coefficient of capacitance. The influence of frit paste on dielectric properties was similiar to that of oxide paste but the stability of temperature property of capacitance was improved.