• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.6
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• pp.575-579
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• 2008

Al-doped p-type ZnO films were fabricated on n-Si (100) and homo-buffer layers in pure oxygen at $450^{\circ}C$ of by RF magnetron sputtering. Target was ZnO ceramic mixed with 2 wt% $Al_2O_3$. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure and homo-buffer layers are beneficial to Al-doped ZnO films to grow along c-axis. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are ranged from $1.66{\times}10^{16}$ to $4.04{\times}10^{18}\;cm^{-3}$, mobilities from 0.194 to $2.3\;cm^2V^{-1}s^{-1}$ and resistivities from 7.97 to $18.4\;{\Omega}cm$. p-type sample has density of $5.40\;cm^{-3}$ which is smaller than theoretically calculated value of $5.67\;cm^{-3}$. XPS spectra show that Ols has O-O and Zn-O structures and Al2p has only Al-O structure. P-ZnO:Al/n-ZnO:Al junctions were fabricated by magnetron sputtering. V-I curves show that the p-n junctions have rectifying characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.408-409
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• 2007

Al-doped p-type ZnO films were fabricated on n-Si (100) and homo-buffer layers in pure oxygen at $450^{\circ}C$ by RF magnetron sputtering. Target was ZnO ceramic mixed with 2wt% $Al_2O_3$. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure and homo-buffer layers are beneficial to Al-doped ZnO films to grow along c-axis. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are ranged from $1.66{\times}10^{16}\;to\;4.04{\times}10^{18}cm^{-3}$, mobilities from 0.194 to $2.3cm^2V^{-1}s^{-1}$ and resistivities from 7.97 to $18.4{\Omega}cm$. P-type sample has density of $5.40cm^{-3}$ which is smaller than theoretically calculated value of $5.67cm^{-3}$. XPS spectra show that O1s has O-O and Zn-O structures and A12p has only Al-O structure. P-ZnO:Al/n-ZnO:Al junctions were fabricated by magnetron sputtering. V-I curves show that the p-n junctions have rectifying characteristics.

• Journal of Information Display
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• v.8 no.2
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• pp.15-19
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• 2007

We have studied the effect of host materials on the electrophosphorescence properties by comparing three different host materials such as tris(8-hydroxyquinoline)-aluminum (III) $(Alq_3)$, bis(8-hydroxyquinoline)-zinc (II) $(Znq_2)$, and 4,4'-N,N' dicarbazole-biphenyl (CBP) doped with a red-emissive phosphorescent dye, 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum (II) (PtOEP). The EL spectra show a strong red emission (peak at 650 nm) from the triplet excited state of PtOEP and a very weak emission from an electron transport layer of $Alq_3$ and a hole transport layer of N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1-biphenyl-4,4'-diamine (TPD). We find that the triplet exciton lifetime and the quantum efficiency decrease in the order of CBP, $Alq_3$, and $Znq_2$ host materials. The results are interpreted as a poor exciton confinement in $Alq_3$, and $Znq_2$ host compared with in CBP. Therefore, it is very important for the triplet-exciton confinement in the emissive layer for obtaining a high efficiency.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.2
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• pp.73-77
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• 2021

Ga-doped ZnO thin films by RF magnetron sputtering process were synthesized according to the deposition conditions of O2 and Ar atmosphere gases, and rapid heat treatment (RTA) was performed at 600℃ in an N2 atmosphere. The thickness of the deposited ZnO : Ga thin film was measured, the crystal phase was investigated by XRD pattern analysis, and the microstructure of the thin film was observed by FE-SEM and AFM images. The intensity of the (002) plane of the X-ray diffraction pattern showed a significant difference depending on the deposition conditions of the thin films formed by O2 and Ar atmosphere gas types. In the case of a single thin f ilm doped with Ga under O2 conditions, a strong diffraction peak was observed. Under O2 and Ar conditions, in the case of a multilayer thin film with Ga doping, only a peak on the (002) plane with a somewhat weak intensity was shown. In the FE-SEM image, it was observed that the grain size of the surface of the thin film slightly increased as the thickness increased. In the case of a multilayer thin film with Ga doping under O2 and Ar atmosphere conditions, the specific resistance was 6.4 × 10-4 Ω·cm. In the case of a single thin film with Ga doping under O2 atmosphere conditions, the resistance of the thin film decreased. The resistance decreased as the thickness of the Ga-doped ZnO thin film increased to 2 ㎛, showing relatively a low specific resistance of 1.0 × 10-3 Ω·cm.

• Advances in nano research
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• v.9 no.2
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• pp.105-112
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• 2020

Silicene is a two-dimensional (2D) derivative of silicon (Si) arranged in honeycomb lattice. It is predicted to be compatible with the present fabrication technology. However, its gapless properties (neglecting the spin-orbiting effect) hinders its application as digital switching devices. Thus, a suitable band gap engineering technique is required. In the present work, the band structure and density of states of uniformly doped silicene are obtained using the nearest neighbour tight-binding (NNTB) model. The results show that uniform substitutional doping using aluminium (Al) has successfully induced band gap in silicene. The band structures of the presented model are in good agreement with published results in terms of the valence band and conduction band. The band gap values extracted from the presented models are 0.39 eV and 0.78 eV for uniformly doped silicene with Al at the doping concentration of 12.5% and 25% respectively. The results show that the engineered band gap values are within the range for electronic switching applications. The conclusions of this study envisage that the uniformly doped silicene with Al can be further explored and applied in the future nanoelectronic devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.3
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• pp.208-212
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• 2008

This paper reports physical properties of in situ boron doped silicon films made from boron source gas and silane ($SiH_4$) gas in a conventional low-pressure chemical vapor deposition vertical furnace. If the p-type polysilicon is formed by boron implantation into undoped polysilicon, the plasma nitridation (PN) process is added on the oxide in order to suppress boron penetration that can be caused during the thermal treatments used in fabrication. In-situ boron doped polysilicon deposition can complete p-type polysilicon film with only one deposition process and need not the PN process, because there is not interdiffusion of dopant at the intermediate temperatures of the subsequent steps. Since in-situ boron doped polysilicon films have higher work function than that of n-type polysilicon and they are compatible with the underlying oxide, they may be promising materials for improving memory cell characteristics if we make its profit of these physical properties.

• Electrical & Electronic Materials
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• v.10 no.1
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• pp.54-60
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• 1997

The electrical and electromagnetic shielding properties have been investigated in polyaniline free standing films with different degrees of elongation cast from N-methyl 2-pyrrolidone(NMP) solution and camphorsulfonic acid(HCSA) doped polyaniline film. The degree of crystallinity of the crosslinked films increased with increasing the draw ratio. For the case of the oriented films doped with hydrochloric acid, we have the values of conductivities up to 173 S/cm. It is considered that the physical micro-crystalline crosslinking domains act as nucleation sites for the increase of relative crystallinity during stretching. We have obtained the value of conductivity 210 S/cm in the HCSA doped polyaniline film cast from the solvent of m-cresol, which is higher than that of the crosslinking oriented films. The electromagnetic shielding efficiency of HCSA doped polyaniline film obtained 37-41 dB in the frequency range of 10MHz-1GHlz, which is higher than that of the crosslinking oriented films. The higher value of electromagnetic shielding efficiency of HCSA doped polyaniline film suggests strong possibility of electromagnetic shielding material.

• Bulletin of the Korean Chemical Society
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• v.10 no.5
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• pp.418-422
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• 1989

Cadmium-doped indium sesquioxide systems with a variety of CdO mol % were prepared to investigate the effect of doping on the electrical properties of indium sesquioxide. The electrical conductivities of pure $In_2O_3$ and Cd-doped $In_2O_3$ systems were measured in the temperature range from 25 to $1200^{\circ}C$ and $P_O_2$ range from $10^{-7}$ to $10^{-1}$ atm, and the thermoelectric power was measured in the same temperature range. The electrical conductivity and thermopower decreased with increasing CdO mol % indicating that all the samples are n-type semiconductors. The electrical conductivities of pure $In_2O_3$ and lightly doped $In_2O_3$ were considerably affected by the chemisorption $O_2$ at temperatures of 400 to $560^{\circ}C$ and then gaseous oxygen was reversibly chemisorbed at the temperature. The predominant defects in $In_2O_3$ are believed to be triply-charged interstitial indiums at temperatures above $560^{\circ}C$ and oxygen vacancies below $560^{\circ}C$. In Cd-doped $In_2O_3$ systems, cadmium acts as an electron acceptor and inhibits the transfer of lattice indium to interstitial sites, which give rise to the decrease of the electrical conductivity.

• Korean Journal of Metals and Materials
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• v.47 no.12
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• pp.860-865
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• 2009

The effect of Co additive on the electrical properties of Fe-Si alloys prepared by a RF inductive furnace was investigated. The electrical conductivity and Seebeck coefficient were measured as a function of the temperature under an Ar atmosphere to evaluate their applicability to thermoelectric energy conversion. The electrical conductivity of the specimens increased as the temperature increased, showing typical semiconducting behavior. The electrical conductivity of Co-doped specimens was higher than that of undoped specimens and increased slightly as the amount of Co additive increased. This is most likely due to the difference in the carrier concentration and the amount of residual metallic phase ${\varepsilon}$-FeSi (The ${\varepsilon}$-FeSi was detected in spite of an annealing treatment of 100 h at $830^{\circ}C$). Additionally, metallic conduction increased slightly as the amount of Co additive increased. On the other hand, Co-doped specimens showed a lower Seebeck coefficient due to the metallic phase. The power factor of Co-doped specimens was higher than that of undoped specimens. This would be affected more by the electrical conductivity compared to the Seebeck coefficient.

• Journal of the Korean Ceramic Society
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• v.44 no.3 s.298
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• pp.147-151
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• 2007

An improvement for the efficiency of the $Sr_{2}SiO_{4}:Eu$ yellow phosphor under the $450{\sim}470\;nm$ excitation range have been achieved by adding the co-doping element ($Mg^{2+}\;and\;Ba^{2+}$) in the host. White LEDs were fabricated through an integration of an blue (InGaN) chip (${\lambda}_{cm}=450\;nm$) and a blend of two phosphors ($Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor) in a single package. The InGaN-based two phosphor blends ($Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor) LEDs showed three bands at 450 nm, 550 nm and 640 nm, respectively. The 450 nm emission band was due to a radiative recombination from an InGaN active layer. This 450 nm emission was used as an optical transition of the $Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor. As a consequence of a preparation of white LEDs using the $Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor yellow phosphor and CaS:Eu red phosphor, the highest luminescence efficiency was obtained at the 0.03 mol $Ba^{2+}$ concentration. At this time, the white LEDs showed the CCT (5300 K), CRI (89.9) and luminous efficacy (17.34 lm/W).