• Microbiology and Biotechnology Letters
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• v.18 no.3
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• pp.309-316
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• 1990

The sequence of a 1795 bp restriction fragment containing the B. circulans F-2 gene for NaC1- dependent $\alpha$-amylase (CI-amylase) is reported. The probable coding region of the gene is 1005 base pairs (335 amino acida) long. The NaC1-dependent $\alpha$-amylase (el-amy) sequence shows an open reading frame (ORF) with the translated molecular weight of about 38, 006, which correspond to a molecular weight of about 35, 000 (Mi). The gene is preceded by the sequence resembling promoter for the vegetative B, subtitis RNA polymerases. These are followed by the sequences resembling a B. subtilis ribosome binding site 5 nucleotides before the first codon of the gene. Homologous regions with other amylases were found. The N-terminal sequences of the mature proteins expressed in E. eoli were identical to the N-terminal sequences which are anaIysed.

• Korean Journal of Microbiology
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• v.30 no.5
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• pp.403-409
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• 1992

For the development of a glucanolytic yeast strain. the seceretion of endo-1.4-$\beta$-D-glucanase (CMCase) of Bacillus subtilis was performed in yeast using glucoamylase gene (STA1) of Saccharomyces diastaticus. A 1.7 kb-DNA fragment of STA1 gene containing authentic promoter, signal sequence, threonine serine-rich (TS) region and N-terminal region (98 amino acids) of mature glucoamylase was ligated to YEp 24. E. coli-yeast shuttle vector. And then. CMCase structural gene of B. subtilis was fused in frame with the 1.7 kb-DNA fragment of STA1 gene, resulting in recombinant plasmid pYES('24. Yeast transformant harboring pYESC24 had no CMCase activity. So. we deleted TS region and N-terminal region of mature glucoamylase existing between signal sequence and CMCase structural gene in pYESC24. consequently constructed recombinant plasmid pYESC11. The yeast transformed with the newly constructed recombinant plasmid pYESC11 efficiently secreted CMCase to extracellular medium. After 4 days culture. total CMCase activity of this transformant was 44.7 units/ml and over 93% of total CMCase activity was detected in culture supernatant.

• Journal of Astronomy and Space Sciences
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• v.38 no.2
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• pp.135-143
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• 2021

We report, for the first time, the afternoon (i.e., from noon to sunset time) observations of the northern mid-latitude E-region field-aligned irregularities (FAIs) made by the very high frequency (VHF) coherent backscatter radar operated continuously since 29 December 2009 at Daejeon (36.18°N, 127.14°E, 26.7°N dip latitude) in South Korea. We present the statistical characteristics of the mid-latitude afternoon E-region FAIs based on the continuous radar observations. Echo signal-to-noise ratio (SNR) of the afternoon E-region FAIs is found to be as high as 35 dB, mostly occurring around 100-135 km altitudes. Most spectral widths of the afternoon echoes are close to zero, indicating that the irregularities during the afternoon time are not related to turbulent plasma motions. The occurrence of afternoon E-regional FAI is observed with significant seasonal variation, with a maximum in summer and a minimum in winter. Furthermore, to investigate the afternoon E-region FAIs-Sporadic E (E_s) relationship, the FAIs have also been compared with E_s parameters based on observations made from an ionosonde located at Icheon (37.14°N, 127.54°E, 27.7°N dip latitude), which is 100 km north of Daejeon. The virtual height of E_s (h'E_s) is mainly in the height range of 105 km to 110 km, which is 5 km to 10 km greater than the bottom of the FAI. There is no relationship between the FAI SNR and the highest frequencies (f_tE_s) (or blanket frequencies (f_bE_s)). SNR of FAIs, however, is found to be related well with (f_tE_s-f_bE_s).

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.15-19
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• 1998

Structural and optical properties of $In_xGa_{1-X}N$ as well as $In_{0.1}Ga_{0.9}N$/GaN single quantum we11 (SQW) grown on sapphire (0001) substrate with an based GaN using rf-plasma assisted MBE have been investigated. The quality of the InXGal.,N fdm was improved as the growth temperature increased. In PL measurements at low temperatures, the band edge emission peaks of $In_xGa_{1-X}N$ was shifted to red region as an indium cell and substrate temperature increased. For $In_{0.1}Ga_{0.9}N$/GaN SQW, the optical emission energy has blue shift about 15meV in PL peak, due to the confined energy level in the well region. And, the FWHM of the $In_{0.1}Ga_{0.9}N$/GaN SQW was larger than that of the bulk Ino,la.9N films. The broadening of FWHM can be explained either as non-uniformity of Indium composition or the potential fluctuation in the well region. Photoconductivity (PC) decay measurement reveals that the optical transition lifetimes of the SQW measured gradually increased with temperatures.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.233-236
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• 2012

In this paper, the output characteristics of GaN-based LED considering blocking layer design variables are analyzed. The basic structure of the LED consists of active region of GaN barrier and InGaN quantum well between AlGaN EBL(Electron Blocking Layer) and AlGaN HBL(Hole Blocking Layer) on GaN buffer layer. The output power, internal quantum efficiency characteristics of LED active region considering Al mole fraction of EBL, thickness of EBL, Al mole fraction of HBL and doping concentration of HBL are analyzed using ISE-TCAD.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.486-487
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• 2007

$Bi_2Sr_2Ca_{n-1}Cu_nO_x$(n=0, 1, 2) thin films have been fabricated by co-deposition at an ultra-low growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was between 655 and $820^{\circ}C$ and the highly condensed ozone gas pressure in vacuum chamber was varied between $2{\times}10^{-6}{\sim}4{\times}10^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.251-254
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• 2012

In this paper, the output characteristics of GaN-based LED considering quantum well structure are analyzed. The basic structure of the LED consists of active region of GaN barrier and InGaN quantum well between AlGaN EBL(Electron Blocking Layer) and AlGaN HBL(Hole Blocking Layer) on GaN buffer layer. The output power, internal quantum efficiency characteristics of LED active region considering thickness of quantum well, number of quantum well and doping of barrier are analyzed using ISE-TCAD.

• Land and Housing Review
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• v.6 no.2
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• pp.79-88
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• 2015

North Korean leader Kim, Jung-Il visited Beijing, China, May 2010, when he made a common recognition with Chinese President Hu Jintao on construction of the Rasun SEZ and the Hwanggumpyong-Wyhwado SEZ for development of Economic cooperation between N.Korea and China and accelerating establishment of SEZs in N.Korea. However, after N.Korea's third nuclear test on Feb. 2013, the relationship between N.Korea and China became a little worse. Recently, three nations' border region near Rasun in N.Korea is reconsidered that it is very important place for collaboration between and among 2, 3 or 4 countries, S.Korea, N.Korea, China and Russia. This thesis examined these changes of cooperation and plans among the countries near the border region and proposed some measures for participation of S.Korea on the projects in the Rasun region.

• Proceedings of the Korea Water Resources Association Conference
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• 2015.05a
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• pp.224-224
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• 2015

The East Asia monsoon is one of the most complex atmospheric phenomena caused by Land-Sea thermal contrast. It plays essential role in fulfilling the water needs of the region but also poses stern consequences in terms of flooding and droughts. This study analyzed the influence of Global Sea Surface Temperature Anomalies (SSTA) on occurrence of droughts in the East Asia monsoon region ($20^{\circ}N-50^{\circ}N$, $103^{\circ}E-149^{\circ}E$). Standardized Precipitation Index (SPI) was employed to characterize the droughts over the region using 30-year (1978-2007) gridded rainfall dataset at $0.5^{\circ}$ grid resolution. Due to high variability in intensity and spatial extent of monsoon rainfall the East Asia monsoon region was divided into the homogeneous rainfall zones using cluster analysis method. Seven zones were delineated that showed unique rainfall regimes over the region. The influence of SSTA was assessed by using lagged-correlation between global gridded SSTA ($0.2^{\circ}$ grid resolution) and SPI of each zone. Sea regions with potential influence on droughts in different zones were identified based on significant positive and negative correlation between SSTA and SPI with a lag period of 3-month. The results showed that SSTA have the potential to be used as predictor variables for prediction of droughts with a reasonable lead time. The findings of this study will assist to improve the drought prediction over the region.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.66-69
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• 2001

Effect of $N_2$ flow rate on properties of GaN thin films grown by plasma-enhanced molecular beam epitaxy(PEMBE) was discussed to optimize the quality of thin films. It was found that at low $N_2$ flow rate indicating high III/V flux ratio, the growth rate of GaN thin films was controlled by $N_2$ flux, and at high $N_2$ flow rate the growth rate was not controlled by $N_2$ flux any longer. It was also found that III/V flux ratio affected film quality. The film grown at higher $N_2$ flow rate showed low background carrier concentration, higher carrier mobility, and narrow FWHM in band-edge emission of low temperature PL. It is thought that the film in more Ga flux region was grown by 2-dimensional layer-by-layer growth mode, and the film in more nitrogen region was grown by 3-D island growth mode. All samples exhibited a good crystallinity.