• 제목/요약/키워드: N region

검색결과 3,453건 처리시간 0.029초

A mutational anlaysis of the N-terminal protease of bovine viral diarrhea virus

  • Chon, Seung-ki
    • 대한수의학회지
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    • 제39권4호
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    • pp.772-777
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    • 1999
  • The uncaped genomic RNA of bovine viral diarrhea virus (BVDV) initiates translation by recruitment of eukaryotic translation initiation factors at the internal ribosome entry site (IRES). N-terminal protease ($N^{pro}$) is the first translation product of the open reading frame (ORF). By using the vaccinia virus SP6 RNA polymerase transient expression system, we showed previously that deletion of $N^{pro}$ region reduced translation by 21%. To better understand the biological significance of $N^{pro}$ for translation, we carried out a mutational analysis of the $N^{pro}$ region of BVDV cloned in the intercistronic region of a bicistronic reporter plasmid. We constructed a bicistronic expression vector in which the entire 5 UTR and the mutated $N^{pro}$ region (${\Delta}386-901$, ${\Delta}415-901$ and ${\Delta}657-901$) was cloned between two reporter genes, chloramphenicol acetyltransferase (CAT) and luciferase (LUC). In vivo translation analyses showed that $N^{pro}$ region was dispensible for efficient translation. The results indicate that the $N^{pro}$ region is not essential for BVDV RNA translation and the 3' boundary of BVDV IRES is expanded into $N^{pro}$ region, suggesting that $N^{pro}$ may not play a major role in BVDV replication.

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Functional significance of rSK2 N-terminal region revealed by electrophysiology and Preliminary Structural Studies

  • Narae Shin;Kang, Gil-boo;Eom, Soo-Hyun;Park, Chul-Seung
    • 한국생물물리학회:학술대회논문집
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    • 한국생물물리학회 2003년도 정기총회 및 학술발표회
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    • pp.41-41
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    • 2003
  • Small conductance calcium-activated potassium channels (or SKCa channels) are potassium selective, voltage-independent, and activated by intracellular calcium concentration. These channels play important roles in excitable cells such as neuron in the central nervous system (Vergara et al., 1998). The activity of SKCa channels underlies the slow afterhyperpolarization that inhibits neuronal cell firing (Hille, 1991; Vergara et al.,1998). Until now, N-terminal region of rSK2 isn't characterized. To study the role of N-terminus, we constructed the N-terminal deletion mutant and characterized by electrophysiological means. Interestingly, N-terminal deletion mutant be trafficked to membrane couldn't evoke any ionic currents. Thus, N-terminal region has a role in functional rSK2 channel formation. To elucidate the function of N-terminal region, (His)6-conjugated protein was purified and filtrated by affinity column chromatography. Surprisingly, N-terminal region was shown in tetramer size that was supported by cross-linking result. Thus, we predicted that N-terminal region might be involved in the tetramerization of rSK2.

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The Field Modulation Effect of a Fluoride Plasma Treatment on the Blocking Characteristics of AlGaN/GaN High Electron Mobility Transistors

  • Kim, Young-Shil;Seok, O-Gyun;Han, Min-Koo;Ha, Min-Woo
    • Transactions on Electrical and Electronic Materials
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    • 제12권4호
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    • pp.148-151
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    • 2011
  • We designed and fabricated aluminium gallium nitride (AlGaN)/GaN high electron mobility transistors (HEMTs) with stable reverse blocking characteristics established by employing a selective fluoride plasma treatment on the drainside gate edge region where the electric field is concentrated. Implanted fluoride ions caused a depolarization in the AlGaN layer and introduced an extra depletion region. The overall contour of the depletion region was expanded along the drift region. The expanded depletion region distributed the field more uniformly and reduced the field intensity peak. Through this field modulation, the leakage current was reduced to 9.3 nA and the breakdown voltage ($V_{BR}$) improved from 900 V to 1,400 V.

한외여과에서의 물질전달에 대한 난류촉진물체의 영향 (The Effect of Turbulence Promoters on the Mass Transfer in Ultrafiltration)

  • 오원석;박함용;임교빈;김우식
    • 멤브레인
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    • 제4권4호
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    • pp.221-231
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    • 1994
  • Dextran(Mw.:500,000)용액의 한외여과에 있어서, 현재 나권형 모듈의 유로형성체로 사용되는 난류촉진물체를 적용하여 실험한 결과, 난류촉진물체의 mesh가 증가할수록 막투과 flux가 향상되었으며, 난류영역에서는 층류영역에 비해 순환유속과 난류촉진물체의 사용에 따른 막투과 flux에 대한 영향이 상대적으로 적었다. 난류촉진물체의 사용에 따른 막투과 flux 향상율은 사용한 membrane의 종류에 따라 층류영역의 경우 최대 112%, 난류영역의 경우 50%에 달하였다. 또한 난류촉진물체를 사용함으로써 한외여과막의 고분자 용질에 대한 배제 성능을 높일 수 있었으며, 이러한 flux 및 배제 성능 증가 등의 효과들은 높은 조작압력차와 낮은 순환유속(농도분극이 상대적으로 심한 영역)에서 더욱 두드러졌다. 그러나, 난류촉진물체의 mesh 수와 순환유속이 증가함에 따라 한외여과 cell 내에서의 압력손실도 증가하였으며, 특히 난류영역에서는 그 영향이 매우 심하였으므로 실제 공정 설계시 순환유속과 압력차 및 난류촉진물체 형태에 따른 압력손실을 반드시 고려해 주어야 함을 알 수 있었다. 물질전달계수 예측을 위한 기존의 물질전달 상관관계식을 농도분극층에서의 고분자 물질의 물성변화를 고려하고 경계층 저항 모델에 근거하여 보정하였는 바, 기존의 관계식에 비해 오차를 줄일 수 있었으며, 이때의 관계식은 다음과 같았다.$N_{sh}=0.151(N_{Re})^{0.199}(N_{Sc})^{0.22}(N_{Scm})^{0.197}\;(625 $N_{sh}=0.0165(N_{Re})^{0.428}(N_{Sc})^{0.33}(N_{Scm})^{0.223}\;(5015

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HVPE GaN film의 성장과 결함 (The growth and defects of GaN film by hydride vapor phase epitaxy)

  • 이성국;박성수;한재용
    • 한국결정성장학회지
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    • 제9권2호
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    • pp.168-172
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    • 1999
  • HVPE 법으로 sapphire 기판 위에 두께 9$\mu\textrm{m}$의 GaN film을 성장하였다. Sapphire위에 직접 성장된 GaN film은 crack free로 mirror surface를 나타내었고 dislocation density는 $2{\times}10^9/cm^2$이었다.$SiO_2$ mask pattern을 사용하여 성장된 ELO GaN film도 대부분이 mirror surface를 나타내었으나 표면 일부에서 coalescence가 덜 이루어져 stripe 방향으로 hole이 존재하였다. ELO GaN film의 mask 윗부분은 window 부분에 비해 낮은 dislocation density를 나타냈다. 특히 mask center와 window사이 영역에서는 거의 dislocation이 없었다. ELO GaN film의 dislocation density는 평균 $8{\times}10^7/cm^2$.이었다.

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산모의 요통 실태와 관리에 대한 조사 연구 (A Survey of Characteristics and Management of Low Back Pain in Postpartum Women)

  • 김선엽;남건우
    • 한국전문물리치료학회지
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    • 제9권1호
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    • pp.69-79
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    • 2002
  • Many pregnant women have experienced low back pain (LBP) during pregnancy and after delivery, and it has been an important component in women health. This study was designed to investigate the characteristics and management of the LBP in postpartum women. Eighty-five postpartum women were participated in this survey. Mean age of 85 women was 28.1 years. Of 85 postpartum women, 55.3% (n=47) had LBP after pregnancy. Thirty of 47 women had pain on lumbar region, 17 postpartum women had pain on sacroilium region. Of 85 postpartum women, 74% (n=54) had LBP before pregnancy and 71.8% (n=61) had LBP during pregnancy. Of 47 postpartum women who had LBP, 83% (n=39) had not received medical management for LBP, 12.8% (n=6) took medication, and 4.3% (n=2) performed self-exercise. None of postpartum women had received physical therapy during pregnancy and after delivery for treatment low back pain. The pain in SI region was more severe than in lumbar region after pregnancy according to VAS (visual analog scale) (p<.05). However, there was no significant difference in VAS scores between SI pain and lumbar pain before and during pregnancy (p>.05). Pain region after delivery was related to pain region of pre-pregnancy and during pregnancy (p<.01). Pain level after delivery was related to the pain and night pain level during pregnancy (p<.01).

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Kink-effect 개선을 위한 세 개의 분리된 N+ 구조를 지닌 대칭형 듀얼 게이트 단결정 TFT 구조에 대한 연구 (Single-silicon TFT Structure for Kink-effect Suppression with Symmetric Dual-gate by Three Split floating N+ Zones)

  • 이대연;황상준;박상원;성만영
    • 한국전기전자재료학회논문지
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    • 제18권5호
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    • pp.423-430
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    • 2005
  • In this paper, we have simulated a Symmetric Dual-gate Single-Si TFT which has three split floating $n^{+}$ zones. This structure reduces the kink-effect drastically and improves the on-current. Due to the separated floating $n^{+}$ zones, the transistor channel region is split into four zones with different lengths defined by a floating $n^{+}$ region. This structure allows an effective reduction of the kink-effect depending on the length of two sub-channels. The on-current of the proposed dual-gate structure is 0.9 mA while that of the conventional dual-gate structure is 0.5 mA at a 12 V drain voltage and a 7 V gate voltage. This results show a $80 {\%}$ enhancement in on-current by adding two floating $n^{+}$ zones. Moreover we observed the reduction of electric field In the channel region compared to conventional single-gate TFT and the reduction of the output conductance in the saturation region. In addition we also confirmed the reduction of hole concentration in the channel region so that the kink-effect reduces effectively.

Genetic Organization of the hrp Genes Cluster in Erwinia pyrifoliae and Characterization of HR Active Domains in HrpNEp Protein by Mutational Analysis

  • Shrestha, Rosemary;Park, Duck Hwan;Cho, Jun Mo;Cho, Saeyoull;Wilson, Calum;Hwang, Ingyu;Hur, Jang Hyun;Lim, Chun Keun
    • Molecules and Cells
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    • 제25권1호
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    • pp.30-42
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    • 2008
  • The disease-specific (dsp) region and the hypersensitive response and pathogenicity (hrp) genes, including the hrpW, $hrpN_{Ep}$, and hrpC operons have previously been sequenced in Erwinia pyrifoliae WT3 [Shrestha et al. (2005a)]. In this study, the remaining hrp genes, including the hrpC, hrpA, hrpS, hrpXY, hrpL and hrpJ operons, were determined. The hrp genes cluster (ca. 38 kb) was comprised of eight transcriptional units and contained nine hrc (hrp conserved) genes. The genetic organization of the hrp/hrc genes and their orientation for the transcriptions were also similar to and collinear with those of E. amylovora, showing ${\geq}80%$ homologies. However, ORFU1 and ORFU2 of unknown functions, present between the hrpA and hrpS operons of E. amylovora, were absent in E. pyrifoliae. To determine the HR active domains, several proteins were prepared from truncated fragments of the N-terminal and the C-terminal regions of $HrpN_{Ep}$ protein of E. pyrifoliae. The proteins prepared from the N-terminal region elicited HR, but not from those of the C-terminal region indicating that HR active domains are located in only N-terminal region of the $HrpN_{Ep}$ protein. Two synthetic oligopeptides produced HR on tobacco confirming presence of two HR active domains in the $HrpN_{Ep}$. The HR positive N-terminal fragment ($HN{\Delta}C187$) was further narrowed down by deleting C-terminal amino acids and internal amino acids to investigate whether amino acid insertion region have role in faster and stronger HR activity in $HrpN_{Ep}$ than $HrpN_{Ea}$. The $HrpN_{Ep}$ mutant proteins $HN{\Delta}C187$ (D1AIR), $HN{\Delta}C187$ (D2AIR) and $HN{\Delta}C187$ (DM41) retained similar HR activation to that of wild-type $HrpN_{Ep}$. However, the $HrpN_{Ep}$ mutant protein $HN{\Delta}C187$ (D3AIR) lacking third amino acid insertion region (102 to 113 aa) reduced HR when compared to that of wild-type $HrpN_{Ep}$. Reduction in HR elicitation could not be observed when single amino acids at different positions were substituted at third amino acids insertion region. But, substitution of amino acids at L103R, L106K and L110R showed reduction in HR activity on tobacco suggesting their importance in activation of HR faster in the $HrpN_{Ep}$ although it requires further detailed analysis.

The Electrical Properties of Single-silicon TFT Structure with Symmetric Dual-Gate for kink effect suppression

  • 이덕진;강이구
    • 한국컴퓨터산업학회논문지
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    • 제6권5호
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    • pp.783-790
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    • 2005
  • In this paper, we have simulated a Symmetric Dual-gate Single-Si TFT which has three split floating n+ zones. This structure reduces the kink-effect drastically and improves the on-current. Due to the separated floating n+ zones, the transistor channel region is split into four zones with different lengths defined by a floating n+ region, This structure allows an effective reduction of the kink-effect depending on the length of two sub-channels. The on-current of the proposed dual-gate structure is 0.9mA while that of the conventional dual-gate structure is 0.5mA at a 12V drain voltage and a 7V gate voltage. This result shows a 80% enhancement in on-current. Moreover we observed the reduction of electric field in the channel region compared to conventional single-gate TFT and the reduction of the output conductance in the saturation region. In addition, we also confirmed the reduction of hole concentration in the channel region so that the kink-effect reduces effectively.

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N-Region Addition in Immunoglobulin Kappa Light Chains in B Cell Subsets in Rheumatoid Arthritis: Evidence for Over-expression of TDT in B Lineage

  • Lee, Choong Won;Bridges, S. Louis Jr
    • IMMUNE NETWORK
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    • 제3권2호
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    • pp.89-95
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    • 2003
  • Background: Unusually high amounts of N region addition and CDR3 length diversity were found in immunoglobulin (Ig) light chain Vk and Jk joins in patients with rheumatoid arthritis (RA). We sought to determine whether this finding is due to excessive activity of the enzyme responsible for N region addition (terminal deoxynucleotidyl transferase [TdT]) in B lineage cells in bone marrow or from positive antigenic selection of B cells with long CDR3 lengths. Methods: We used FACS to isolate $IgM^+/IgD^+$ B cells (predominantly naive) and $IgM^-/IgD^-$ B cells (predominantly class-switched) B cells from peripheral blood of a patient with RA known to have enrichment for long Vk CDR3s and from that of two normal controls. RT-PCR of VkIII transcripts was performed, followed by sequencing of individual cDNA clones. We analyzed the CDR3 lengths and N region additions in 97 clones. Results: There was enrichment for long CDR3 lengths (11 or 12 amino acids) in both $IgM^+/IgD^+$ and $IgM^-/IgD^-$ B cells in RA compared to B cell subsets in the normal controls. The $IgM^+/IgD^+$ B cell subset in RA was markedly enriched for N region addition and was similar to that seen in the $IgM^-/IgD^-$ subset. Conclusion: These data suggest that enrichment for N region addition and long CDR3 lengths in RA may result from unusually high or prolonged activity of TdT in bone marrow.