• Title/Summary/Keyword: N region

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A mutational anlaysis of the N-terminal protease of bovine viral diarrhea virus

  • Chon, Seung-ki
    • Korean Journal of Veterinary Research
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    • v.39 no.4
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    • pp.772-777
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    • 1999
  • The uncaped genomic RNA of bovine viral diarrhea virus (BVDV) initiates translation by recruitment of eukaryotic translation initiation factors at the internal ribosome entry site (IRES). N-terminal protease ($N^{pro}$) is the first translation product of the open reading frame (ORF). By using the vaccinia virus SP6 RNA polymerase transient expression system, we showed previously that deletion of $N^{pro}$ region reduced translation by 21%. To better understand the biological significance of $N^{pro}$ for translation, we carried out a mutational analysis of the $N^{pro}$ region of BVDV cloned in the intercistronic region of a bicistronic reporter plasmid. We constructed a bicistronic expression vector in which the entire 5 UTR and the mutated $N^{pro}$ region (${\Delta}386-901$, ${\Delta}415-901$ and ${\Delta}657-901$) was cloned between two reporter genes, chloramphenicol acetyltransferase (CAT) and luciferase (LUC). In vivo translation analyses showed that $N^{pro}$ region was dispensible for efficient translation. The results indicate that the $N^{pro}$ region is not essential for BVDV RNA translation and the 3' boundary of BVDV IRES is expanded into $N^{pro}$ region, suggesting that $N^{pro}$ may not play a major role in BVDV replication.

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Functional significance of rSK2 N-terminal region revealed by electrophysiology and Preliminary Structural Studies

  • Narae Shin;Kang, Gil-boo;Eom, Soo-Hyun;Park, Chul-Seung
    • Proceedings of the Korean Biophysical Society Conference
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    • 2003.06a
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    • pp.41-41
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    • 2003
  • Small conductance calcium-activated potassium channels (or SKCa channels) are potassium selective, voltage-independent, and activated by intracellular calcium concentration. These channels play important roles in excitable cells such as neuron in the central nervous system (Vergara et al., 1998). The activity of SKCa channels underlies the slow afterhyperpolarization that inhibits neuronal cell firing (Hille, 1991; Vergara et al.,1998). Until now, N-terminal region of rSK2 isn't characterized. To study the role of N-terminus, we constructed the N-terminal deletion mutant and characterized by electrophysiological means. Interestingly, N-terminal deletion mutant be trafficked to membrane couldn't evoke any ionic currents. Thus, N-terminal region has a role in functional rSK2 channel formation. To elucidate the function of N-terminal region, (His)6-conjugated protein was purified and filtrated by affinity column chromatography. Surprisingly, N-terminal region was shown in tetramer size that was supported by cross-linking result. Thus, we predicted that N-terminal region might be involved in the tetramerization of rSK2.

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The Field Modulation Effect of a Fluoride Plasma Treatment on the Blocking Characteristics of AlGaN/GaN High Electron Mobility Transistors

  • Kim, Young-Shil;Seok, O-Gyun;Han, Min-Koo;Ha, Min-Woo
    • Transactions on Electrical and Electronic Materials
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    • v.12 no.4
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    • pp.148-151
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    • 2011
  • We designed and fabricated aluminium gallium nitride (AlGaN)/GaN high electron mobility transistors (HEMTs) with stable reverse blocking characteristics established by employing a selective fluoride plasma treatment on the drainside gate edge region where the electric field is concentrated. Implanted fluoride ions caused a depolarization in the AlGaN layer and introduced an extra depletion region. The overall contour of the depletion region was expanded along the drift region. The expanded depletion region distributed the field more uniformly and reduced the field intensity peak. Through this field modulation, the leakage current was reduced to 9.3 nA and the breakdown voltage ($V_{BR}$) improved from 900 V to 1,400 V.

The Effect of Turbulence Promoters on the Mass Transfer in Ultrafiltration (한외여과에서의 물질전달에 대한 난류촉진물체의 영향)

  • Oh, Won-Suhk;Park, Ham-Yong;Lim, Gio-Bin;Kim, Woo-Sik
    • Membrane Journal
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    • v.4 no.4
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    • pp.221-231
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    • 1994
  • The GR51PP(MWCO 50,000) and GR40PP(MWCO 100,000) membranes manufactured by DDS were used in ultrafiltration of dextran(Mw. : 500,000) solution in flat plate ultrafiltration cell filled with various types of turbulence promoters. The flux improvement by using turbulence promoter was higher in laminar flow region than in turbulent flow region. The maximum improvements of permeate flux were foud as 112% and 50% I laminar flow region and turbulent flow region, respectively. Also, the solute rejection of the ultrafiltration membrane was improved by turbulence promoters and its effect was significant in the high transmembrane pressure and laminar flow region. The smaller the spacer mesh size was used, the higher the flux improved, but the pressure drop in ultrafiltration cell also increased. In laminar flow region, pressure drop by the spacer was negligible, but in turbulent flow region it changed significantly depending upon the mesh size of the spacer and therefore, its mesh size must be baken into account in the design of the process. The predicted results of the modified mass transfer correlation had better agreement with experimental results than those of unmodified one, The modified mass transfer correlations for laminar and turbulent flow region are shown as follow. $N_{sh}=0.151(N_{Re})^{0.199}(N_{Sc})^{0.22}(N_{Scm})^{0.197}\;(625 $N_{sh}=0.0165(N_{Re})^{0.428}(N_{Sc})^{0.33}(N_{Scm})^{0.223}\;(5015

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The growth and defects of GaN film by hydride vapor phase epitaxy (HVPE GaN film의 성장과 결함)

  • 이성국;박성수;한재용
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.9 no.2
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    • pp.168-172
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    • 1999
  • The 9 $\mu\textrm{m}$ GaN films on sapphire substrate were grown by Hydride vapor phase epitaxy. Dislocation density of these GaN films was measured by TEM. GaN film with crack free and mirror surface was directly grown on sapphire substrate. The dislocation density of this GaN film was $2{\times}10^9/cm^2$. The surface of GaN film on patterned GaN layer also presented a smooth mirror. But a part of GaN surface included holes because of incomplete coalescence. The dislocation density of GaN film above the mask region was lower than that in the window region. Especially, the dislocation density in the region between mask center and window region was close to dislocation free. The average dislocation density of ELO GaN was $8{\times}10^7/cm^2$.

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A Survey of Characteristics and Management of Low Back Pain in Postpartum Women (산모의 요통 실태와 관리에 대한 조사 연구)

  • Kim, Suhn-Yeop;Nam, Kun-Woo
    • Physical Therapy Korea
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    • v.9 no.1
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    • pp.69-79
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    • 2002
  • Many pregnant women have experienced low back pain (LBP) during pregnancy and after delivery, and it has been an important component in women health. This study was designed to investigate the characteristics and management of the LBP in postpartum women. Eighty-five postpartum women were participated in this survey. Mean age of 85 women was 28.1 years. Of 85 postpartum women, 55.3% (n=47) had LBP after pregnancy. Thirty of 47 women had pain on lumbar region, 17 postpartum women had pain on sacroilium region. Of 85 postpartum women, 74% (n=54) had LBP before pregnancy and 71.8% (n=61) had LBP during pregnancy. Of 47 postpartum women who had LBP, 83% (n=39) had not received medical management for LBP, 12.8% (n=6) took medication, and 4.3% (n=2) performed self-exercise. None of postpartum women had received physical therapy during pregnancy and after delivery for treatment low back pain. The pain in SI region was more severe than in lumbar region after pregnancy according to VAS (visual analog scale) (p<.05). However, there was no significant difference in VAS scores between SI pain and lumbar pain before and during pregnancy (p>.05). Pain region after delivery was related to pain region of pre-pregnancy and during pregnancy (p<.01). Pain level after delivery was related to the pain and night pain level during pregnancy (p<.01).

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Single-silicon TFT Structure for Kink-effect Suppression with Symmetric Dual-gate by Three Split floating N+ Zones (Kink-effect 개선을 위한 세 개의 분리된 N+ 구조를 지닌 대칭형 듀얼 게이트 단결정 TFT 구조에 대한 연구)

  • Lee, Dae-Yeon;Hwang, Sang-Jun;Park, Sang-Won;Sung, Man-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.5
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    • pp.423-430
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    • 2005
  • In this paper, we have simulated a Symmetric Dual-gate Single-Si TFT which has three split floating $n^{+}$ zones. This structure reduces the kink-effect drastically and improves the on-current. Due to the separated floating $n^{+}$ zones, the transistor channel region is split into four zones with different lengths defined by a floating $n^{+}$ region. This structure allows an effective reduction of the kink-effect depending on the length of two sub-channels. The on-current of the proposed dual-gate structure is 0.9 mA while that of the conventional dual-gate structure is 0.5 mA at a 12 V drain voltage and a 7 V gate voltage. This results show a $80 {\%}$ enhancement in on-current by adding two floating $n^{+}$ zones. Moreover we observed the reduction of electric field In the channel region compared to conventional single-gate TFT and the reduction of the output conductance in the saturation region. In addition we also confirmed the reduction of hole concentration in the channel region so that the kink-effect reduces effectively.

Genetic Organization of the hrp Genes Cluster in Erwinia pyrifoliae and Characterization of HR Active Domains in HrpNEp Protein by Mutational Analysis

  • Shrestha, Rosemary;Park, Duck Hwan;Cho, Jun Mo;Cho, Saeyoull;Wilson, Calum;Hwang, Ingyu;Hur, Jang Hyun;Lim, Chun Keun
    • Molecules and Cells
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    • v.25 no.1
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    • pp.30-42
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    • 2008
  • The disease-specific (dsp) region and the hypersensitive response and pathogenicity (hrp) genes, including the hrpW, $hrpN_{Ep}$, and hrpC operons have previously been sequenced in Erwinia pyrifoliae WT3 [Shrestha et al. (2005a)]. In this study, the remaining hrp genes, including the hrpC, hrpA, hrpS, hrpXY, hrpL and hrpJ operons, were determined. The hrp genes cluster (ca. 38 kb) was comprised of eight transcriptional units and contained nine hrc (hrp conserved) genes. The genetic organization of the hrp/hrc genes and their orientation for the transcriptions were also similar to and collinear with those of E. amylovora, showing ${\geq}80%$ homologies. However, ORFU1 and ORFU2 of unknown functions, present between the hrpA and hrpS operons of E. amylovora, were absent in E. pyrifoliae. To determine the HR active domains, several proteins were prepared from truncated fragments of the N-terminal and the C-terminal regions of $HrpN_{Ep}$ protein of E. pyrifoliae. The proteins prepared from the N-terminal region elicited HR, but not from those of the C-terminal region indicating that HR active domains are located in only N-terminal region of the $HrpN_{Ep}$ protein. Two synthetic oligopeptides produced HR on tobacco confirming presence of two HR active domains in the $HrpN_{Ep}$. The HR positive N-terminal fragment ($HN{\Delta}C187$) was further narrowed down by deleting C-terminal amino acids and internal amino acids to investigate whether amino acid insertion region have role in faster and stronger HR activity in $HrpN_{Ep}$ than $HrpN_{Ea}$. The $HrpN_{Ep}$ mutant proteins $HN{\Delta}C187$ (D1AIR), $HN{\Delta}C187$ (D2AIR) and $HN{\Delta}C187$ (DM41) retained similar HR activation to that of wild-type $HrpN_{Ep}$. However, the $HrpN_{Ep}$ mutant protein $HN{\Delta}C187$ (D3AIR) lacking third amino acid insertion region (102 to 113 aa) reduced HR when compared to that of wild-type $HrpN_{Ep}$. Reduction in HR elicitation could not be observed when single amino acids at different positions were substituted at third amino acids insertion region. But, substitution of amino acids at L103R, L106K and L110R showed reduction in HR activity on tobacco suggesting their importance in activation of HR faster in the $HrpN_{Ep}$ although it requires further detailed analysis.

The Electrical Properties of Single-silicon TFT Structure with Symmetric Dual-Gate for kink effect suppression

  • Lee, Deok-Jin;Kang, Ey-Goo
    • Journal of the Korea Computer Industry Society
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    • v.6 no.5
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    • pp.783-790
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    • 2005
  • In this paper, we have simulated a Symmetric Dual-gate Single-Si TFT which has three split floating n+ zones. This structure reduces the kink-effect drastically and improves the on-current. Due to the separated floating n+ zones, the transistor channel region is split into four zones with different lengths defined by a floating n+ region, This structure allows an effective reduction of the kink-effect depending on the length of two sub-channels. The on-current of the proposed dual-gate structure is 0.9mA while that of the conventional dual-gate structure is 0.5mA at a 12V drain voltage and a 7V gate voltage. This result shows a 80% enhancement in on-current. Moreover we observed the reduction of electric field in the channel region compared to conventional single-gate TFT and the reduction of the output conductance in the saturation region. In addition, we also confirmed the reduction of hole concentration in the channel region so that the kink-effect reduces effectively.

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N-Region Addition in Immunoglobulin Kappa Light Chains in B Cell Subsets in Rheumatoid Arthritis: Evidence for Over-expression of TDT in B Lineage

  • Lee, Choong Won;Bridges, S. Louis Jr
    • IMMUNE NETWORK
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    • v.3 no.2
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    • pp.89-95
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    • 2003
  • Background: Unusually high amounts of N region addition and CDR3 length diversity were found in immunoglobulin (Ig) light chain Vk and Jk joins in patients with rheumatoid arthritis (RA). We sought to determine whether this finding is due to excessive activity of the enzyme responsible for N region addition (terminal deoxynucleotidyl transferase [TdT]) in B lineage cells in bone marrow or from positive antigenic selection of B cells with long CDR3 lengths. Methods: We used FACS to isolate $IgM^+/IgD^+$ B cells (predominantly naive) and $IgM^-/IgD^-$ B cells (predominantly class-switched) B cells from peripheral blood of a patient with RA known to have enrichment for long Vk CDR3s and from that of two normal controls. RT-PCR of VkIII transcripts was performed, followed by sequencing of individual cDNA clones. We analyzed the CDR3 lengths and N region additions in 97 clones. Results: There was enrichment for long CDR3 lengths (11 or 12 amino acids) in both $IgM^+/IgD^+$ and $IgM^-/IgD^-$ B cells in RA compared to B cell subsets in the normal controls. The $IgM^+/IgD^+$ B cell subset in RA was markedly enriched for N region addition and was similar to that seen in the $IgM^-/IgD^-$ subset. Conclusion: These data suggest that enrichment for N region addition and long CDR3 lengths in RA may result from unusually high or prolonged activity of TdT in bone marrow.