• Title/Summary/Keyword: N deposition

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Ti Prepared by ionized physical vapor deposition (I-PVD) and TiN prepared by metal-organic chemical vapor deposition(MOCVD) as underlayers of aluminum TiN (Al 박막의 underlayer로서의 Ionized Physical Vapor Deposition (I-PVD) Ti 또는 I-PVD Ti/Metal-Organic Chemical Vapor Deposition TiN)

  • 이원준;나사균
    • Journal of the Korean Vacuum Society
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    • v.9 no.4
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    • pp.394-399
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    • 2000
  • The effects of the type and thickness of underlayer on the crystallographic texture and the sheet resistance of aluminum thin film were studied. Ti and Ti/TiN were examined as the underlayer of aluminum. Ti and TiN were prepared by ionized physical vapor deposition (I-PVD) metalorganic chemical vapor deposition (MOCVD), respectively. The texture and the sheet resistance of metal thin film stacks were investigated at various thicknesses of Ti or TiN, and the sheet resistance was measured after annealing at $400^{\circ}C$ in an nitrogen ambient. For I-PVD Ti underlayer, the excellent texture of aluminum <111> was obtained even at top of 5 nm of Ti. However, the sheet resistance of the metal stack was greatly increased after annealing due to the interdiffusion and reaction of Al and Ti. MOCVD TiN between Ti and Al could suppress the Al-Ti reaction without severe degradation of aluminum <111> texture. Excellent texture of aluminum was obtained for the MOCVD TiN thinner than 4 nm.

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Characteristics of $B_2$Sr_2$$Ca_{n-1}$$Cu_n$$O_x$ Superconducting Thin Films Fabricated by Layer-by-Layer Deposition Method (Layer-by-Layer 증착법으로 제작한 $B_2$Sr_2$$Ca_{n-1}$$Cu_n$$O_x$초전도 박막의 특성)

  • 유선종;천민우;박용필
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2003.05a
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    • pp.518-521
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    • 2003
  • Bi$_2$Sr$_2$Ca$_{n-1}$Cu$_{n}$O$_{x}$ superconducting thin films have been fabricated by atomic layer-by-layer deposition using IBS(Ion Beam Sputtering) method. During the deposition, 90 mol% ozone gas of typical pressure of 1~9 $\times$ 10$^{-5}$ Torr are supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.grown.

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Influence of Deposition Temperature on the Film Growth Behavior and Mechanical Properties of Chromium Aluminum Nitride Coatings Prepared by Cathodic Arc Evaporation Technique

  • Heo, Sungbo;Kim, Wang Ryeol
    • Journal of the Korean institute of surface engineering
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    • v.54 no.3
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    • pp.139-143
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    • 2021
  • Cr-Al-N coatings were deposited onto WC-Co substrates using a cathodic arc evaporation (CAE) system. CAE technique is recognized to be a very useful process for hard coatings because it has many advantages such as high packing density and good adhesion to metallic substrates. In this study, the influence of deposition temperature as a key process parameter on film growth behavior and mechanical properties of Cr-Al-N coatings were systematically investigated and correlated with microstructural changes. From various analyses, the Cr-Al-N coatings prepared at deposition temperature of 450℃ in the CAE process showed excellent mechanical properties with higher deposition rate. The Cr-Al-N coatings with deposition temperature around 450℃ exhibited the highest hardness of about 35 GPa and elastic modulus of 442 GPa. The resistance to elastic strain to failure (H/E ratio) and the index of plastic deformation (H3/E2 ratio) were also good values of 0.079 and 0.221 GPa, respectively, at the deposition temperature of 450℃. Based on the XRD, SEM and TEM analyses, the Cr-Al-N coatings exhibited a dense columnar structure with f.c.c. (Cr,Al)N multi-oriented phases in which crystallites showed irregular shapes (50~100nm in size) with many edge dislocations and lattice mismatches.

Effect of Microstructure of Substrate on the Metallization Characteristics of the Electroless Copper Deposition for ULSI Interconnection Effect of Plasma

  • 홍석우;이용선;박종완
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.03a
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    • pp.86-86
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    • 2003
  • Copper has attracted much attention in the deep submicron ULSI metallization process as a replacement for aluminum due to its lower resistivity and higher electromigration resistance. Electroless copper deposition method is appealing because it yields conformal, high quality copper at relatively low cost and a low processing temperature. In this work, it was investigated that effect of the microstructure of the substrate on the electroless deposition. The mechanism of the nucleation and growth of the palladium nuclei during palladium activation was proposed. Electroless copper deposition on TiN barriers using glyoxylic acid as a reducing agent was also investigated to replace toxic formaldehyde. Furthermore, electroless copper deposition on TaN$\sub$x/ barriers was examined at various nitrogen flow rate during TaN$\sub$x/ deposition. Finally, it was investigated that the effect of plasma treatment of as-deposited TaN$\sub$x/ harriers on the electroless copper deposition.

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Properties of TiN Films Fabricated by Oblique Angle Deposition (빗각 증착으로 제조된 TiN 박막의 특성)

  • Jung, Jae-Hun;Yang, Ji-Hoon;Park, Hye-Sun;Song, Min-A;Jeong, Jae-In
    • Journal of the Korean institute of surface engineering
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    • v.45 no.3
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    • pp.106-110
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    • 2012
  • Oblique angle deposition (OAD) is a physical vapor deposition where incident vapor flux arrives at non-normal angles. It has been known that tilting the substrate changes the properties of the film, which is thought to be a result of morphological change of the film. In this study, OAD has been applied to prepare single and multilayer TiN films by cathodic arc deposition. TiN films have been deposited on cold-rolled steel sheets and stainless steel sheet. The deposition angle as well as substrate temperature and substrate bias was changed to investigate their effects on the properties of TiN films. TiN films were analyzed by color difference meter, scanning electron microscopy, nanoindenter and x-ray diffraction. The color of TiN films was not much changed according to the deposition conditions. The slanted and zigzag structures were observed from the single and multilayer films. The relation between substrate tilting angle (${\alpha}$) and the growth column angle (${\beta}$) followed the equation of $tan{\alpha}=2tan{\beta}$. The indentation hardness of TiN films deposited by OAD was low compared with the ones prepared at normal angle. However, it has been found that $H^3/E^2$ ratio of 3-layer TiN films prepared at OAD condition was a little higher than the ones prepared at normal angle, which can confirm the robustness of prepared films.

The effect of deposition conditions on the adhesion strength of TiN multilayer by D. C. magnetron sputtering (D. C. 마그네트론 스퍼터링에 의한 증착조건이 TiN다층박막의 밀착력에 미치는 영향)

  • 김선규;유정광;이건환;권식철
    • Journal of the Korean institute of surface engineering
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    • v.29 no.4
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    • pp.261-267
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    • 1996
  • The characteristics and adhesion strength of TiN layer deposited by D. C. magnetron sputtering were investigated. Three types of TiN layers were deposited on STS304 stainless steel. Scratch tests were performed to determine the effect of deposition temperature, the thickness of coated TiN layer and the titanium inter-layer on the adhesion strength. TiN multilayer with titanium inter-layer showed the highest critical load in the deposition temperature range of $25^{\circ}C$ to $300^{\circ}C$. Adhesion strength of TiN multilayer with titanium inter-layer was raised from 15N to 20N by raising deposition temperature from $25^{\circ}C$ to $400^{\circ}C$. Adhesion strength was raised from 18N to 38N by increasing the thickness of outer layer of TiN multilayer from 2.1 $\mu\textrm{m}$ to 9.5 $\mu\textrm{m}$.

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The Effect of Deposition Temperature on the Growth behavior of TiN deposited by PECVD (TiN 박막 성장거동에 미치는 증착온도의 영향)

  • Lee, In Woo;Nam, O.H.;Kim, Moon Il
    • Journal of the Korean Society for Heat Treatment
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    • v.6 no.4
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    • pp.223-229
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    • 1993
  • Extensive reseach has been performed on the process condition-micro structure-stress relations of TiN film. The various proposed models are mainly base on physical vapor deposition processes. Especially the study on the micro-structure and deposition condition has not been sufficient in TiN deposited by PECVD. In this study, therefore, we discussed the morphological changes of TiN films by PECVD with different temperature and pressure, and compared it with the structure zone model. We could find out that the oxygen and chlorine contents and the texture coefficient increased with deposition temperature, and the morphology of TiN transformed from Zone 1 to Zone T, but deposition pressure didn't remarkly affected.

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The Effects of Process parameters on TiN Films deposited by Ion Plating Technique (이온 플레이팅의 TiN코팅층에 미치는 작업인자의 영향)

  • 백응승;권식철;이상로;이건환
    • Journal of the Korean institute of surface engineering
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    • v.23 no.2
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    • pp.24-29
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    • 1990
  • The TiN filmms were deposited on the stainless steel substrates by BARE techinique in order to investigate the effects of process parameters such as source-to-substate distance (15-35cm), N2 pressure(4$\times$10-10 -1$\times$10-3mb)and bias voltage(O-2000V), on the deposition rate, the concentration ratio [N/Ti] and the surface color of the films. The deposition rate was deduced from the weight measurement, the [N/ti] ratio by ESCA. The deposition rate decreased with a relationship of=40.2/D2 where D was source-to-substrate distance. The effect of the bias voltage and the N2pressure on the deposition rate, however, appeared negligble. The [N/Ti] ratio was in the narrow range of 0.7 tp 0.8 It increased slightly with the N2 partial pressure and deceased with the source-to-substrate distance. It was confired by ESCA that a significant amount of oxygen and carbon was contaminated after deposition in the top surface of TiN films. The surface color of TiN film was changed from light gold yellow to reddish gold yellow with increasing [N/Ti] ratio.

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Deposition Behaviors of Ti-Si-N Thin Films by RF Plasma-Enhanced Chemical Vapor Deposition. (RF-PECVD법에 의한 Ti-Si-N 박막의 증착거동)

  • 이응안;이윤복;김광호
    • Journal of the Korean institute of surface engineering
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    • v.35 no.4
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    • pp.211-217
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    • 2002
  • Ti-Si-N films were deposited onto WC-Co substrate by a RF-PECVD technique. The deposition behaviors of Ti-Si-N films were investigated by varying the deposition temperature, RF power, and reaction gas ratio (Mx). Ti-Si-N films deposited at 500, 180W, and Mx 60% had a maximum hardness value of 38GPa. The microstructure of films with a maximum hardness was revealed to be a nanocomposite of TiN crystallites penetrated by amorphous silicon nitride phase by HRTEM analyses. The microstructure of maximum hardness with Si content (10 at.%) was revealed to be a nanocomposite of TiN crystallites penetrated by amorphous silicon nitride phase, but to have partly aligned structure of TiN and some inhomogeniety in distribution. and At above 10 at.% Si content, TiN crystallite became finer and more isotropic also thickness of amorphous silicon nitride phase increased at microstructure.

The Chemical Vapor Deposition of TiN on Cemented Tungsten Carbide Cutting Tools (초연합금절단공구상에 TiN의 화학증착피막에 관한 연구)

  • 이상래
    • Journal of the Korean institute of surface engineering
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    • v.15 no.3
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    • pp.138-145
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    • 1982
  • The effects of the simultaneous variations of the ratio of feed gases(H2/N2 Flow ratio), feed gas flow rate (H2/N2, total-flow rate) and partial pressures of TiCl4 (PTiCl41) as well as deposition time and cobalt content of the substrate on the deposition rate of the TiN Coated Cemented Tungsten Carbide Tools were investigated. Deposition was carried out in the temperature range of 930$^{\circ}C$-1080$^{\circ}C$ and an activation energy of 46.5 Kcal/mole can be calculated. Transverse rupture strength was noticeably reduced by the TiN coating on the virgin surfa-ce of Cemented Tungsten Carbide, the extent of which was decreased according to the coa-ting thickness. Microhardness value observed on the work was in the range of 1700∼2000kg/mm, which were in well agreement with the value of bult TiN. The wear resistance of TiN layers was performed by turning test and it was observed that crater and flank resistance remarkably enhanced by TiN coating.

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