• Applied Microscopy
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• v.46 no.3
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• pp.164-166
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• 2016

Electron channeling contrast imaging (ECCI) is a powerful analyzing tool for identifying lattice defects like dislocations and twin boundaries. By using diffraction-based scanning electron microscopy technique, it enables microstructure analysis, which is comparable to that obtained by transmission electron microscopy that is mostly used in defect analysis. In this report, the optimal conditions for investigating crystal defects are suggested. We could obtain the best ECCI images when both acceleration voltage and probe current are high (30 kV and 20 nA). Also, shortening the working distance (6 mm) enhances the quality of defect imaging.

• Journal of the Korean Society for Heat Treatment
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• v.13 no.3
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• pp.158-162
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• 2000

The high temperature oxidation behavior and the surface defect in Fe-25Mn-1.5A1-0.5C steel was investigated by XRD (X-ray Diffractin) and electron microscopy. The intra- and inter-granular oxides were formed by the selective oxidation of manganese and aluminum, which were identified to MnAl2O4 phase. Aluminum nitride (AlN) was formed in front of these oxides. The ${\gamma}$-matrix was transformed to ${\alpha}$- and ${\varepsilon}$- phases by the selective oxidation of manganese. The surface defect, micro-scab was induced by the difference of the high temperature ductility between the matrix and the inter-granular oxide.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.149-150
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• 2005

Thyristor breakdown voltage variation acceleration aging test was investigated. The breakdown voltage was deceased after 1000 hours acceleration aging test. It temperature rising caused by electric field concentration at the edge beveling region of the thyristor was confirmed using Silvaco device simulation. The local temperature rising is driving force for the defect propagation. Consequently, propagated defects of the beveling region seems to decrease thyristor's breakdown voltage.

• Journal of Chest Surgery
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• v.46 no.2
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• pp.93-97
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• 2013

Background: Minimally invasive cardiac surgery has emerged as an alternative to conventional open surgery. This report reviews our experience with atrial septal defect using the da VinciTM surgical robot system. Materials and Methods: This retrospective study included 50 consecutive patients who underwent atrial septal defect repair using the da VinciTM surgical robot system between October 2007 and May 2011. Among these, 13 patients (26%) were approached through a totally endoscopic approach and the others by mini-thoracotomy. Nineteen patients had concomitant procedures including tricuspid annuloplasty (n=10), mitral valvuloplasty (n=9), and maze procedure (n=4). The mean follow-up duration was $16.9{\pm}10.4$ months. Results: No remnant interatrial shunt was detected by intraoperative or postoperative echocardiography. The atrial septal defects were mainly repaired by Gore-Tex patch closure (80%). There was no operative mortality or serious surgical complications. The aortic cross clamping time and cardiopulmonary bypass time were $74.1{\pm}32.2$ and $157.6{\pm}49.7$ minutes, respectively. The postoperative hospital stay was $5.5{\pm}3.3$ days. Conclusion: The atrial septal defect repair with concomitant procedures like mitral valve repair or tricuspid valve repair using the da VinciTM system is a feasible method. In addition, in selected patients, complete port access can be helpful for better cosmetic results and less musculoskeletal injury.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.105-106
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• 1998

Evaluation of def3ects by etch-ppit formation was studied. A NaOH(30 mol%) etchant was found useful for etch-ppit developpment on ZnSe-based eppilayers grown on (001) gaAs. And a H3ppO4(85 mol%) was used in order to developp etch-ppits on GaN-base eppilayers grown on (0001) Al2O3 After etch-ppit formation on the surfsce. Transmission Electron Microscoppy(TEM) was cppmdicted. By etch-ppit developpment and TEM observation we could determine the defect typpes by etch-ppit configurfations and found origin of etch-ppit in the cse of ZnSe-based materials. Based uppon these results we can do defect identification by etch-ppit test simpply. In the case of GaN-based materials we could evaluate nanoppippe density. however high density of threading dislocations in GaN eppilayers were not revealed by etch-ppit developpment. Based uppon these results we can evaluate the nanoppippe density which difficult to evaluate using TEM beacause of its small size(diameter). And at ppresent status direct matching of etch-ppit density to dislocation density would make severe mistake.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.17-21
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• 2001

We proposed that concentrations of cartier electron as well as ionized donor defects in nonstoichiometric ZnO are proportional to $P^{-1/2}_{O_2}$, whenever they ionizes singly or doubly, by employing the Fermi-Dirac (FD) statistics for ionization of the native thermal defects $Zn_i$ and $V_o$. The effect of acceptor defect, zinc vacancy $V_{Zn}$made by the Frenkel and Schottky disorder reactions, on carrier concentrations was discussed. By application of the FD statistics law to their ionization while the formation of defects is assumed governed by the mass-action law, the calculation results indicate; 1. ZnO shows n-type conductivity with $N_D>$N_A$ and majority concentration of $n{\propto}\;P^{-1/2}_{O_2}$ in a range of $P_{O_2}$, lower than a critical value. 2. As the concentration of acceptor $V_{Zn}$ increases proportional to $P^{1/2}_{O_{2}}$, ZnO made at extremely high $P_{O_{2}}$, can have p-type conductivity with majority concentration of p ${\propto}\;P^{-1/2}_{O_{2}}$. One may not, however, obtain p-type ZnO if the pressure for $N_{D}<$N_{A}$ is too high.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.12a
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• pp.140-140
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• 2007

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.4
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• pp.164-167
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• 2010

Bulk GaN single crystal with 1.5 mm thickness was successfully grown by hydride vapor phase epitaxy (HVPE) technique. Free-standing GaN substrates of $10{\times}10,\;15{\times}15$ mm size were fabricate after lift-off of sapphire substrate and their optical properties were characterized properties for device applications. X-ray diffraction patterns showed (002) and (004) peak, and the FWHM of the X-ray rocking curve (XRC) measurement in (002) was 98 arcsec. A sharp photoluminescence spectrum at 363 nm was observed and defect spectrum at visible range was not detected. The hexagonal-shaped etch-pits are formed on the GaN surface in $200^{\circ}C\;H_3PO_4$ at 5 minutes. The defect density calculated from observed etch-pits on surface was around $5{\times}10^6/cm^2$. This indicates that the fabricated GaN substrates can be used for applications in the field of optodevice, and high power electronics.

• Korean Journal of Mathematics
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• v.29 no.2
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• pp.239-252
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• 2021

The prime target of this paper is to compare some relative (k, n) Nevanlinna defects with relative (k, n) Valiron defects from the view point of integrated moduli of logarithmic derivative of entire and meromorphic functions where k and n are any two non-negative integers.

• Journal of Chest Surgery
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• v.27 no.11
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• pp.902-906
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• 1994

Between May 1991 and August 1993, 16 patients underwent repair of complete atrioventricular septal defect without another major anomaly at Cardiovascular Center,Yonsei University College of Medicine. Ages of the patients ranged from 3 months to 38 years with a mean of 42 months. Among 16, 10 patients[63%] are associated with Down`s syndrome. All patients underwent primary repair except and one who received had been repaire of coactation of aorta and patent ductus arteriosus 2 month before. Preoperative mitral valve regurgitation [MR] was evaluated with Doppler echocardiography and angiography which revealed absent or grade I in 1, grade II in 8, grade III in 4, and grade IV in 3. Operative technique was performed under the moderate hypothermic cardiopulmonary bypass with crystalloid cardioplegia. Intraoperative echocardiography was performed epicardial approach [n=7] in the operative table or transthoracic approach [n=9] at intensive care unit. In all patients except 3, MR were improved. But in 3 patients, was not improved or exagerated comparing preoperative one. All of them were died.One patient was showed MR grade IV in intraoperative echocardiography, we re-repaired atriventricular valve with cardiopulmonary bypass. During follow-up period [at a mean of 11 months after repair], doppler echocardiography was performed in all patients. The follow up echocardiography revealed that the degree of MR in immediate postoperative period was not changed except in two patients in whom it was aggravated. Thus it seems that intraoperative and early postoperative echocardiography was employed important role of survival and can be predictable for long term results.