• Title/Summary/Keyword: N defect

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외부 반송이 있는 생물활성탄담체(BACC) 공정에 의한 오수 중 질소${\cdot}$인의 동시 제거

  • Lee, Ho-Gyeong;Gwon, Sin;Jo, Mu-Hwan
    • 한국생물공학회:학술대회논문집
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    • 2000.04a
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    • pp.414-417
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    • 2000
  • BACC(Biological Activated Carbon Cartridge)process is a newly developed biological process to remove organic compounds, nitrogen, and phosphorus with activated carbon granules in iron fixed-frame cartridge type. The largest defect of previous BACC process was denitrification inefficiency. The removal efficiencies of nitrogen and phosphorous with external recycle ratios $100{\sim}200%$ for synthetic wastewater were $69.8{\sim}90.1%$ and $62.18{\sim}91%$, respectively, since the modified BACC process with external recycle overcame the defect of BACC process. When external recycle ratio was increased more than 300%, T-N removal efficiencies were decreased. In the treatment of a real sewage using modified BACC process, $COD_{Cr}$, removal efficiencies were $96.3{\sim}97.5%$ which was similar to those of the previous BACC process. while T-N removal efficiencies was $88.3{\sim}95.7%$ which were superior to those of the previous BACC process.

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Effect of hydroxyapatite on critical-sized defect

  • Kim, Ryoe-Woon;Kim, Ji-Hyoung;Moon, Seong-Yong
    • Maxillofacial Plastic and Reconstructive Surgery
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    • v.38
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    • pp.26.1-26.6
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    • 2016
  • Background: Xenologous or synthetic graft materials are commonly used as an alternative for autografts for guided bone regeneration. The purpose of this study was to evaluate effectiveness of carbonate apatite on the critical-size bone defect of rat's calvarium. Methods: Thirty-six critical-size defects were created on 18 adult male Sprague-Dawley rat calvaria under general anesthesia. Calvarial bones were grinded with 8 mm in daimeter bilaterally and then filled with (1) no grafts (control, n = 10 defects), (2) bovine bone mineral (Bio-$Oss^{(R)}$, Geistlich Pharma Ag. Swiss, n = 11 defects), and (3) hydroxyapatite ($Bongros^{(R)}$, Bio@ Inc., Seongnam, Korea, n = 15 defects). At 4 and 8 weeks after surgery, the rats were sacrificed and all samples were processed for histological and histomorphometric analysis. Results: At 4 weeks after surgery, group 3 ($42.90{\pm}9.33%$) showed a significant difference (p < 0.05) compared to the control ($30.50{\pm}6.05%$) and group 2 ($28.53{\pm}8.62%$). At 8 weeks after surgery, group 1 ($50.21{\pm}6.23%$), group 2 ($54.12{\pm}10.54%$), and group 3 ($50.92{\pm}6.05%$) showed no significant difference in the new bone formation. Conclusions: $Bongros^{(R)}$-HA was thought to be the available material for regenerating the new bone formation.

Influence of the interface defect density on silicon heterojunction solar cells (실리콘 이종접합 태양전지에서 계면 결함 밀도의 영향)

  • Kim, Chan Seok;Lee, Seunghun;Tak, Sung Ju;Choi, Suyoung;Boo, Hyun Pil;Lee, Jeong Chul;Kim, Donghwan
    • 한국신재생에너지학회:학술대회논문집
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    • 2011.05a
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    • pp.103.1-103.1
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    • 2011
  • 실리콘 이종접합 태양전지에서 계면 결함 밀도는 효율을 결정하는데 가장 중요한 요인으로 작용한다. 계면 결함은 캐리어의 재결합 위치로 작용하여, 계면 결함 밀도가 증가하면 재결합 속도가 증가하게 된다. 흡수층으로 사용되는 실리콘 웨이퍼 (결정질 실리콘)를 가능한 깨끗하게 세정함으로써, 또한 emitter로 쓰이는 비정질 실리콘을 낮은 데미지로 증착하여 계면 결함 밀도를 감소 시킬 수 있다. 이러한 계면 결함 밀도의 감소가 어떠한 변화로 인해 태양전지 특성에 영향을 주는지 시물레이션을 통해 알아보았다. n-type 웨이퍼에 p-type 비정질 실리콘을 emitter로 하여 TCO/p/i/n-type wafer/i/n/TCO/metal의 구조를 적용했고, wafer 전면과 i로 쓰인 무첨가된 비정질 실리콘 간의 계면 결함 밀도를 변수로 적용했다. 그 결과, 계면 결함 밀도가 감소함에 따라 재결합이 감소하여 태양전지 특성이 증가하는 측면도 있지만, 흡수층의 장벽 (barrier height)이 높아져 재결합을 더욱 감소시킴으로 인해 태양전지 특성이 증가함을 알 수 있었다.

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Calculation of Carrier Electron Concentration in ZnO Depending on Oxygen Partial Pressure

  • Kim, Eun-Dong;Park, Jong-Mun;Kim, Sang-Cheol;Kim, Nam-Kyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.05b
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    • pp.222-232
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    • 2000
  • The relationship between carrier electron concentration(n) and atmosphere oxygen partial pressure($P_{O_2}$ for pure ZnO calculated by the mass-action law, well-known as n ${\propto}P^{-1/m}_{O_2}$ where m = 4 or 6 for the single or the double ionization of the native donor defects due to its nonstoichiometry, respectively, is found in competition with the calculation result on the basis that the total defect concentration is the sum of those of unionized and ionized defects. Definitively, it is found inconsistent with the calculation result by employing the Fermi-Dirac(FD) statistics for their ionization processes. By application of the FD statistics law to the ionization while assuming the defect formation is still ruled by the mass-action law, the calculation results shows the concentration is proportional to $P^{-1/2}_{O_2}$ whenever they ionize singly and/or doubly. Conclusively we would like to propose the new theoretical relation n ${\propto}P^{-1/m}_{O_2}$ because the ionization processes of donors in ZnO should be treated with the electronoccupation probability at localized quantum states in its forbidden band created by the donor defects, i.e. the FD statistics

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Infrared Spectra and Electrical Conductivity of The Solid Solutions X MgO + (1-X) ${\alpha}-Nb_2$ $O_5$; 0.01{\leq}X{\leq}0.09

  • Park Zin;Park, Jong Sik;Lee Dong Hoon;Jun Jong Ho;Yo Chul Hyun;Kim Keu Hong
    • Bulletin of the Korean Chemical Society
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    • v.13 no.2
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    • pp.127-131
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    • 1992
  • Changes in network structures of ${\alpha}-Nb_2O_5$ in the X MgO+(1-X) ${\alpha}-Nb_2O_5$ solid solutions occurring as the MgO doping level (X) was varied were investigated by means of infrared spectroscopy and X-ray analysis. X-ray diffraction revealed that all the synthesized specimens have the monoclinic structure. The FT-IR spectroscopy showed that the system investigated forms the solid solutions in which $Mg^{2+}$ ions occupy the octahedral sites in parent crystal lattice. Electrical conductivities were measured as a function of temperature from 600 to $1050{\circ}$ and $P_{O2}$ form $1{\times}10^{-5}$ to $2{\times}10^{-1}$ atm. The defect structure and conduction mechanism were deduced from the results. The $1}n$ value in ${\alpha}{\propto}{P_{O2}^{1}n}}$ is found to be -1/4 with single possible defect model. From the activation energy ($E{\alpha}$ = 1.67-1.73 eV) and the1/n value, electronic conduction mechanism is suggested with a doubly charged oxygen vacancy.

NDE Inspecting Techniques for Wind Turbine Blades Using Terahertz Waves (테라헤르츠파를 이용한 풍력터빈 블레이드 NDE 탐상 평가기법)

  • Im, Kwang-Hee;Kim, Sun-Kyu;Jung, Jong-An;Cho, Young-Tae;Woo, Yong-Deuck
    • Journal of Advanced Engineering and Technology
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    • v.11 no.4
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    • pp.245-251
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    • 2018
  • Terahertz waves (T-ray) was extensively studied for the NDE (nondestructive evaluation) of characterization of trailing edges for a use of turbines composed with composite materials. The used NDE system were consisted of both CW(Continuous wave) and TDS (Time domain spectroscopy). The FRP composites were utilized for two kinds of both trailing edges of wind energy (non-conducting polymeric composites) and carbon fiber composites with conducting properties. The signals of T-ray in the TDS (Time domain spectroscopy) mode resembles almost that of ultrasound waves; however, a terahertz pulse could not penetrate a material with conductivity unlike ultrasound. Also, a method was suggested to obtain the "n" in the materials, which is called the refractive index (n). The data of refractive index (n) could be solved for the trailing edges. The trailing edges were scanned for characterization and inspection. C-scan and B-scan images were obtained and best optimal NDE techniques were suggested for complicated geometry samples by terahertz radiation. Especially, it is found that the defect image of T-ray corresponded with defect locations for the trailing edges of wind mill.

Deep-Level Defects on Nitrogen-Doped ZnO by Photoinduced Current Transient Spectroscopy

  • Choi, Hyun Yul;Seo, Dong Hyeok;Kwak, Dong Wook;Kim, Min Soo;Kim, Yu Kyeong;Lee, Ho Jae;Song, Dong Hun;Kim, Jae Hee;Lee, Jae Sun;Lee, Sung Ho;Yoon, Deuk Gong;Bae, Jin Sun;Cho, Hoon Young
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.421-422
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    • 2013
  • Recently, ZnO has received attentionbecause of its applications in optoelectronics and spintronics. In order to investigate deep level defects in ZnO, we used N-doped ZnO with various of the N-doping concentration. which are reference samples (undoped ZnO), 27%, 49%, and 88%-doped ZnO. Photoinduced current transient spectroscopy (PICTS) measurement was carried out to find deep level traps in high resistive ZnO:N. In reference ZnO sample, a deep trap was found to located at 0.31 (as denoted as the CO trap) eV below conduction band edge. And the CN1 and CN2 traps were located at 0.09, at 0.17 eV below conduction band edge, respectively. In the case of both annealed samples at 200 and $300^{\circ}C$, the defect density of the CO trap increases and then decreases with an increase of N-doping concentration. On the other hands, the density of CN traps has little change according to an increase of N-doping concentration in the annealed sample at $300^{\circ}C$. According to the result of PICTS measurement for different N-doping concentration, we suggest that the CO trap could be controled by N-doping and the CN traps be stabilized by thermal annealing at $300^{\circ}C$.

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Low Reverse Saturation Current Density of Amorphous Silicon Solar Cell Due to Reduced Thickness of Active Layer

  • Iftiquar, S M;Yi, Junsin
    • Journal of Electrical Engineering and Technology
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    • v.11 no.4
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    • pp.939-942
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    • 2016
  • One of the most important characteristic curves of a solar cell is its current density-voltage (J-V) curve under AM1.5G insolation. Solar cell can be considered as a semiconductor diode, so a diode equivalent model was used to estimate its parameters from the J-V curve by numerical simulation. Active layer plays an important role in operation of a solar cell. We investigated the effect thicknesses and defect densities (Nd) of the active layer on the J-V curve. When the active layer thickness was varied (for Nd = 8×1017 cm-3) from 800 nm to 100 nm, the reverse saturation current density (Jo) changed from 3.56×10-5 A/cm2 to 9.62×10-11 A/cm2 and its ideality factor (n) changed from 5.28 to 2.02. For a reduced defect density (Nd = 4×1015 cm-3), the n remained within 1.45≤n≤1.92 for the same thickness range. A small increase in shunt resistance and almost no change in series resistance were observed in these cells. The low reverse saturation current density (Jo = 9.62×10-11 A/cm2) and diode ideality factor (n = 2.02 or 1.45) were observed for amorphous silicon based solar cell with 100 nm thick active layer.

Free Flap Reconstruction of the Foot (유리 피판에 의한 족부 연부 조직 결손의 재건)

  • Kim, Hyoung-Min;Jeong, Chang-Hoon;Song, Seok-Whan;Lee, Gi-Haeng;Yoon, Seok-Joon
    • Archives of Reconstructive Microsurgery
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    • v.11 no.1
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    • pp.29-35
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    • 2002
  • Free flap reconstruction of the foot has become one of the standard procedures at the present time, but choice of a free flap for the soft tissue defect of the foot according to location and size remains controversial. We evaluated the results of free flap reconstruction for the soft tissue defects of the foot. Twenty seven free flaps to the foot were performed between May 1986 and December 2000 in the department of Orthopedic Surgery. Patient age ranged from 3 to 60 years. Male to female distribution was 20:7. Mean follow-up period was 30.5 months which ranged from 12 months to 60 months. The indications for a specific flap depended on the location and extension of the foot defect. In weight-bearing area and amputation stump, the authors chose the sensate (reinnervated) dorsalis pedis flaps (n=7) and sensate radial forearm flaps (n=2). In nonweight-bearing area including dorsum of the foot and area around Achilles tendon, we performed nonsensate (non-reinnervated) free flap reconstructions which included dorsalis pedis flaps (n=5), groin flap (n=1), radial forearm flaps (n=6), scapular flaps (n=4), latissimus dorsi flaps (n=2). Twenty-six flaps transferred successfully (96.3%). The sensate flaps which were performed in weight-bearing area and amputation stumps survived in all cases and recovered protective sensation. Mean two-point discrimination was 26 mm at the last follow up. As a conclusion, the selection of a proper flap depends on the location and extension of the foot defect and patient's age. Fasciocutaneous flap including radial forearm flaps and dorsalis pedis flaps were the best choice in nonweight-bearing area. The sensate free flaps which are performed in the weight-bearing area and amputation stumps can produce better outcome than nonsensate free flap.

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Investigation of Various Radiation Proton Energy Effect on n, p Type Silicon by Positron Annihilation Method (양전자 소멸 측정법으로 양성자 조사에너지 변화에 대한 n, p형 실리콘 구조 특성)

  • Lee, Chong Yong
    • Journal of the Korean Vacuum Society
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    • v.22 no.6
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    • pp.341-347
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    • 2013
  • The n-type and p-type silicon samples were exposed by 40.0, 3.98 MeV proton beams ranging between 0 to $20.0{\times}10^{13}protons/cm^2$. Coincidence Doppler Broadening Positron Annihilation Spectroscopy (CDBPAS) were applied to study of defect characteristics of p type and n type silicon samples. In this investigation the numerical analysis of the spectra was employed to the determination of the shape parameter, S, defined as the ratio between the amount of counts in a central portion of the gamma spectrum and the total counts of whole gamma spectrum. The S-parameter values strongly depend on the irradiated proton beam that indicated the defects generate more, rather than the energy intensity. 40 MeV irradiated proton beam in the n-type silicon at $20.0{\times}10^{13}protons/cm^2$ was larger defects than 3.98 MeV irradiated proton beam. It was analysis between the proton irradiation beams and the proton intensities of the irradiation. Because of the Bragg peak, SRIM results shows mainly in a certain depth of the sample to form the defect by the proton irradiation, rather than the defects to appear for the entire sample.