• Journal of Korean Society of Environmental Engineers
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• v.28 no.5
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• pp.501-510
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• 2006

To investigate the effects of MLSS concentration and influent C/N ratio on the nitrogen removal efficiency of alternately intermittently aerated nonwoven fabric filter bioreactors, the MLSS concentrations of the reactors were maintained at approximately 5,500 mg/L, 10,000 mg/L and 15,000 mg/L, and the influent TCOD/TKN ratio was decreased gradually from 5 to 2 by adding $NH_4Cl$. The influent was prepared by diluting a food waste leachate to a TCOD concentration of about 300 mg/L. The results of the experiment showed F/M ratios less than 0.112 g TCOD/g MLSS-day, average TCOD removal efficiencies of above 95%, and an average observed microbial yield coefficient of 0.283 g MLSS/g COD removed. The nitrification efficiencies were computed to be always better than 96% except one case where the nitrification efficiency was 90.5% when the MLSS concentration and the influent TCOD/TKN ratio was 5,500 mg/L and 2, respectively. The denitrification efficiency deteriorated as the influent TCOD/TKN ratio decreased. The average denitrification efficiency at the MLSS concentration of 10,000 mg/L was 10.7% better than that at the MLSS concentration of 5,500 mg/L, and the denitrification rate improved at a rate of 2.66 mg NL as the MLSS concentration increased by 1,000 mg/L. When the MLSS concentration was 15,000 mg/L, however, the average denitrification efficiency was merely 4.6% higher compared to when the MLSS concentration was 5,500 mg/L, and the denitrification rate increased at a rate of 0.75 mg N/L per 1,000 mg/L MLSS increase. Therefore, no strict proportional relationship was found between MLSS concentration and endogenous denitrification rate. The average alkalinity consumption rate was 3.36 mg alkalinity/mg T-N removed, which is similar to the theoretical value of 3.57 mg alkalinity/mg T-N removed, but the rate increased as the influent TCOD/TKN ratio decreased.

• Korean Journal of Plant Tissue Culture
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• v.21 no.4
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• pp.193-200
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• 1994

The effects of sucrose concentration and nitrogen source on shoot growth and in vitro formation of garlic (Allium sativum L. cv Seosan) bulblet were investigated in order to systematize propagation of high quality garlic through a shoot apical meristem culture. Shoot differentiation was not affected by sucrose concentration and nitrogen source, but plantlets which contain medium of NH$_4$- N or NH$_4$ + NO$_3$ were vigorous and healthy in .appearance. Shoot growth was vigorous in changeing of nitrogen source. The best quality of in vitro bulblets was obtained in culture on the medium containing 8% sucrose and NH$_4$ - N, and the formation of bulblet was more effective when plantlets were subjected to cold treatment before use. NH$_4$-N was a major factor for shoot growth and bulblet development, but NO$_3$-N was not and suppressed $K^{+}$absorption. The level of ethylene production was not affected by different nitrogen sources, however this production was enhanced in medium containing a higher concentration of sucrose.e.

• Journal of Korean Society on Water Environment
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• v.30 no.5
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• pp.503-511
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• 2014

The temporal and spatial analyses of total nitrogen (TN) fractionation were conducted in order to understand 1) total nitrogen components in streams and 2) their patterns in rainy and dry seasons. The result showed that the concentration of nitrogen components in stream water was lower in non-urban area and getting higher in urban area. Dissolved total nitrogen (DTN) was 95~97.7% of total nitrogen in streams, and the proportion of dissolved organic nitrogen (DON) and ammonia nitrogen ($NH_3-N$) was higher with increasing urban area. The concentration of total nitrogen and nitrate nitrogen ($NO_3-N$) were highest in winter among four seasons. The result was showed that concentration of $NH_3-N$ was same variation as concentrations of TN and $NO_3-N$ in urban-rural complex and urban areas, except rural areas. During rainy season, concentrations of particulate organic nitrogen (PON) and $NH_3-N$ increased in rural areas and decreased in both urban-rural complex and urban areas. Correlation between total nitrogen components and land uses was positively correlated with site > paddy, and negatively correlated with forest. The variation of total nitrogen concentration was determined by $NO_3-N$ in non-urban areas, by $NO_3-N$ and $NH_3-N$ in urban-rural complex and by $NH_3-N$ in the urban areas.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.244.1-244.1
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• 2013

The p-type GaN which act as a hole injection layer in GaN-based LEDs has fundamental problems. The first one arises from the difficulty in growing a highly doped p-GaN (with a carrier concentration exceeding ~1018 $cm^{-3}$). And the second one is the absence of appropriate metals or conducting oxides having a work function that is larger than that of p-type GaN (7.5 eV). Moreover, the LED efficiency is decreases gradually as the injection current increases (the so-called 'efficiency droop' phenomenon). The efficiency droop phenomenon in InGaN quantum wells (QWs) has been a large obstacle that has hindered high-efficiency operation at high current density. In this study, we introduce the new approaches to improve the light-output power of LEDs by using graphene oxide sheets. Graphene oxide has many functional groups such as the oxygen epoxide, the hydroxyl, and the carboxyl groups. Due to nature of such functional groups, graphene oxide possess a lot of hole carriers. If graphene oxide combine with LED top surface, graphene oxide may supply hole carriers to p-type GaN layer which has relatively low free carrier concentration less than electron concentration in n-type GaN layer. To prove the enhancement factor of graphene oxide coated LEDs, we have investigated electrical and optical properties by using ultra-violet photo-excited spectroscopy, confocal scanning electroluminescence microscopy.

• Journal of Sensor Science and Technology
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• v.23 no.2
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• pp.94-98
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• 2014

Aluminum nitride (AlN) thin films with a TiN buffer layer have been fabricated on SUS430 substrate by RF reactive magnetron sputtering at room temperature under 25~75% $N_2$ /Ar. The characterization of film properties were performed using surface profiler, X-ray diffraction, X-ray photoelectron spectroscopy(XPS), and pressure-voltage measurement system. The deposition rates of AlN films were decreased with increasing the $N_2$ concentration owing to lower mass of nitrogen ions than Ar. The as-deposited AlN films showed crystalline phase, and with increasing the $N_2$ concentration, the peak of AlN(100) plane and the crystallinity became weak. Any change in the preferential orientation of the as-deposited AlN films was not observed within our $N_2$ concentration range. But in the case of 50% $N_2$ /Ar condition, the peak of (002) plane, which is determinant in pressure sensing properties, appeared. XPS depth profiling of AlN/TiN/SUS430 revealed Al/N ratio was close to stoichiometric value (45:47) when deposited under 50% $N_2/Ar$ atmosphere at room temperature. The output signal voltage of AlN sensor showed a linear behavior between 26~85 mV, and the pressure-sensing sensitivity was calculated as 7 mV/MPa.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.308-309
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• 2012

One of the critical issues in the growth of multijunction solar cell is the formation of a highly doped Esaki interband tunnel diode which interconnects unit cells of different energy band gap. Small electrical and optical losses are the requirements of such tunnel diodes [1]. To satisfy these requirements, tens of nanometer thick gallium arsenide (GaAs) can be a proper candidate due to its high carrier concentration in low energy band gap. To obtain highly doped GaAs in molecular beam epitaxy, the temperatures of Si Knudsen cell (K-cell) for n-type GaAs and Be K-cell for p-type GaAs were controlled during GaAs epitaxial growth, and the growth rate is set to 1.75 A/s. As a result, the doping concentration of p-type and n-type GaAs increased up to $4.7{\times}10^{19}cm^{-3}$ and $6.2{\times}10^{18}cm^{-3}$, respectively. However, the obtained n-type doping concentration is not sufficient to form a properly operating tunnel diode which requires a doping concentration close to $1.0{\times}10^{19}cm^{-3}$ [2]. To enhance the n-type doping concentration, n-doped GaAs samples were grown with a lower growth rate ranging from 0.318 to 1.123 A/s at a Si K-cell temperature of $1,180^{\circ}C$. As shown in Fig. 1, the n-type doping concentration was increased to $7.7{\times}10^{18}cm^{-3}$ when the growth rate was decreased to 0.318 A/s. The p-type doping concentration also increased to $4.1{\times}10^{19}cm^{-3}$ with the decrease of growth rate to 0.318 A/s. Additionally, bulk resistance was also decreased in both the grown samples. However, a transmission line measurement performed on the n-type GaAs sample grown at the rate of 0.318 A/s showed an increased specific contact resistance of $6.62{\times}10^{-4}{\Omega}{\cdot}cm^{-2}$. This high value of contact resistance is not suitable for forming contacts and interfaces. The increased resistance is attributed to the excessively incorporated dopant during low growth rate. Further studies need to be carried out to evaluate the effect of excess dopants on the operation of tunnel diode.

• Proceedings of the National Institute of Ecology of the Republic of Korea
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• v.2 no.4
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• pp.259-273
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• 2021

We conducted a study to investigate the characteristics of the carbon cycle of two streams (located in Shig a Prefecture, Japan), having similar size, namely, the Adokawa stream (length: 52 km, area: 305 km², watershed population: 8,000) and the Yasukawa stream (length: 62 km, area: 380 km², watershed population: 120,000), but with different degree of human activity. Samples were collected from these two streams at 14 (Adokawa stream) and 23 (Yasukawa stream) stations in the flowing direction. The dissolved inorganic carbon (DIC) concentration and the stable carbon isotope ratio of DIC (δ¹³C-DIC) were measured in addition to the watershed features and the chemical variables of the stream water. The δ¹³C-DIC (-9.50 ± 2.54‰), DIC concentration (249 ± 76 µM), and electric conductivity (52 ± 13 µS/cm) in Adokawa stream showed small variations from upstream to downstream. However, the δ¹³C-DIC (-8.68 ± 2.3‰) upstream of Yasukawa stream was similar to that of Adokawa stream and decreased downstream (-12.13 ± 0.43‰). DIC concentration (upstream: 272 ± 89 µM, downstream: 690 ± 37 µM) and electric conductivity (upstream: 69 ± 17 µS/cm, downstream: 193 ± 37 µS/cm) were higher downstream than upstream of Yasukawa stream. The DIC concentration of Yasukawa stream was significantly correlated with watershed environmental variables, such as, watershed population density (r = 0.8581, p<0.0001, n = 23), and forest area percentage of the watershed (r = -0.9188, p<0.0001, n = 23). δ¹³C-DIC showed significant negative correlation with the DIC concentration (r = -0.7734, p<0.0001, n = 23), electric conductivity (r = -0.5396, p = 0.0079, n = 23), and watershed population density (r = -0.6836, p = 0.0003, n = 23). Our approach using a stable carbon isotope ratio suggests that DIC concentration and δ¹³C-DIC could be used as indicators for monitoring the health of stream ecosystems with different watershed characteristics.

• Journal of Sensor Science and Technology
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• v.17 no.4
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• pp.256-260
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• 2008

This paper describes the mechanical properties of poly(polycrystalline) 3C-SiC thin films with various doping concentration, in which poly 3C-SiC thin fil's mechanical properties according to the n-doping concentration 1($9.2{\times}10^{15}cm^{-3}$), 3($5.2{\times}10^{17}cm^{-3}$), and 5%($6.8{\times}10^{17}cm^{-3}$) respectively were measured by nano indentation. In the case of $9.2{\times}10^{15}cm^{-3}n$-doping concentration, Young's modulus and hardness were obtained as 270 and 30 GPa, respectively. When the surface roughness according to n-doping concentrations was investigated by AFM(atomic force microscope), the roughness of poly 3C-SiC thin films doped by 5% concentration was 15 nm, which is also the best of them.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.437-438
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• 2008

박막태양전지에서 p-layer, i-layer, n-layer의 thickness와 doping concentration은 가장 기본이 되는 요소이다. 각 layer에서 위 두 가지 요소를 ASA simulator를 이용해서 높은 효율을 갖는 박막태양전지를 설계하기 위해 조절하였다. Simulation결과 p-layer의 thickness는 $9.5*10^{-9}m$, doping concentration은 0.2eV, i-layer의 thickness는 $4.535*10^{-7}m$, n-layer의 thickness는 $2*10^{-8}m$, doping concentration 은 0.1eV에서 최종 11.48%의 효율을 얻을 수 있었다. 본 연구를 통하여 높은 효율의 박막태양전지 설계 시에 도움이 될 수 있을 것이다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.6
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• pp.586-591
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• 2004

We studied the dependence of hot-tarrier-induced degradation characteristics on nitrogen concentration in NO(Nitrided-Oxide) gate of nMOS, under ac and dc stresses. The $\Delta$V$_{t}$ and $\Delta$G$_{m}$ dependence of nitrogen concentration were observed, We observed that device degradation was suppressed significantly when the nitrogen concentration in the gate was increased. Compared to $N_2$O oxynitride, NO oxynitride gate devices show a smaller sensitivity to ac stress frequency. Results suggest that the improved at-hot carrier immunity of the device with NO gate may be due to the significantly suppressed interface state generation and neutral trap generation during stress.ess.