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http://dx.doi.org/10.5369/JSST.2008.17.4.256

Mechanical properties of polycrystalline 3C-SiC thin films with various doping concentrations  

Kim, Kang-San (School of Electrical Eng., University of Ulsan)
Chung, Gwiy-Sang (School of Electrical Eng., University of Ulsan)
Publication Information
Journal of Sensor Science and Technology / v.17, no.4, 2008 , pp. 256-260 More about this Journal
Abstract
This paper describes the mechanical properties of poly(polycrystalline) 3C-SiC thin films with various doping concentration, in which poly 3C-SiC thin fil's mechanical properties according to the n-doping concentration 1($9.2{\times}10^{15}cm^{-3}$), 3($5.2{\times}10^{17}cm^{-3}$), and 5%($6.8{\times}10^{17}cm^{-3}$) respectively were measured by nano indentation. In the case of $9.2{\times}10^{15}cm^{-3}n$-doping concentration, Young's modulus and hardness were obtained as 270 and 30 GPa, respectively. When the surface roughness according to n-doping concentrations was investigated by AFM(atomic force microscope), the roughness of poly 3C-SiC thin films doped by 5% concentration was 15 nm, which is also the best of them.
Keywords
3C-SiC; Young's modulus; hardness; nano indentation;
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