• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.54-54
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• 2011

The demand for low-friction, wear and corrosion resistant components, which operate under severe conditions, has directed attentions to advanced surface engineering technologies. The Filtered Vacuum Arc Cathode Deposition (FVACD) process has demonstrated atomically smooth surface at relatively high deposition rates over large surface areas. Preparation of Ti-Si-C-N nanocomposite coatings on (100) Si and stainless steel substrates with tetramethylsilane (TMS) gas pressures to optimize the film preparation conditions. Ti-S-C-N coatings were characterized using X-ray diffraction, X-ray photoelectron spectroscopy, transmission electron microscopy, nanoindentation, Rockwell C indentation and ball-on-disk wear tests. The XRD results have confirmed phase formation information of TiSiCN coatings, which shows mixing of TiN and TiC structure, corresponding to (111), (200) and (220) planes of TiCN. The chemical composition of the film was investigated by XPS core level spectra. The binding energy of the elements present in the films was estimated using XPS measurements and it shows present of elemental information corresponding to Ti2p, N1s, Si 2p and C1. Film hardness and elastic modulus were measured with a nano-indenter, and film hardness reached 40 GPa. Tribological behaviors of the films were evaluated using a ball-on-disk tribometer, and the films demonstrated properties of low-friction and good wear resistance.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.429-429
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• 2012

To investigate the gettering effect of B-doped n-type monocrystalline silicon wafer, we made the p-n junction by diffusing boron into n-type monocrystalline Si substrate and then oxidized the boron doped n-type monocrystalline silicon wafer by in-situ wet and dry oxidation. After oxidation, the minority carrier lifetime was measured by using microwave photoconductance and the sheet resistance by 4-point probe, respectively. The junction depth was analyzed by Secondary Ion Mass Spectrometry (SIMS). Boron diffusion reduced the metal impurities in the bulk of silicon wafer and increased the minority carrier lifetime. In the case of wet oxidation, the sheet resistance value of ${\sim}46{\Omega}/{\Box}$ was obtained at $900^{\circ}C$, depostion time 50 min, and drive-in time 10 min. Uniformity was ~7% at $925^{\circ}C$, deposition time 30 min, and drive-in time 10 min. Finally, the minority carrier lifetime was shown to be increased from $3.3{\mu}s$ for bare wafer to $21.6{\mu}s$ for $900^{\circ}C$, deposition 40 min, and drive-in 10 min condition. In the case of dry oxidation, for the condition of 50 min deposition, 10 min drive-in, and O2 flow of 2000 SCCM, the minority carrier lifetime of 16.3us, the sheet resistance of ${\sim}48{\Omega}/{\Box}$, and uniformity of 2% were measured.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.421.1-421.1
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• 2016

We studied indium-doped zinc oxide (IZO) film grown by atomic layer deposition (ALD) as transparent conductive oxide (TCO). A variety of TCO layer, such as ZnO:Al (AZO), InSnO2(ITO), Zn (O,S) etc, has been grown by various method, such as ALD, chemical vapor deposition (CVD), sputtering, laser ablation, sol-gel technique, etc. Among many deposition methods, ALD has various advantages such as uniformity of film thickness, film composition, conformality, and low temperature deposition, as compared with other techniques. In this study, we deposited indium-doped zinc oxide thin films using diethyl[bis(trimethylsilyl)amido]indium [Et2InN(TMS)2] as indium precursor, DEZn as zinc precursor and H2O as oxidant for ALD and investigated the optical and electrical properties of IZO films. As an alternative, this liquid In precursor would has several advantages in indium oxide thin-film processes by ALD, especially for low resistance indium oxide thin film and high deposition rate as compared to InCp, InCl3, TMIn precursors etc. We found out that Indium oxide films grown by Et2InN(TMS)2 and H2O precursor show ALD growth mode and ALD growth window. We also found out the different growth rate of Indium oxide as the substrate and investigated the effect of the substrate on Indium oxide growth.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.265-275
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• 1999

Titanium nitride and related overlayers produced by arc ion plating (AIP) are applied as commercial coatings in world-wide scale since the middle of 80s. Due to the achievements of low temperature deposition (LTD), they begin now to be used as wear and corrosion-resistant coatings for machine parts, besides applications on cemented carbide and high speed steel cutting tools. On the other side, TiN can be now applied successfully to brass, Al-alloy, ZnAl alloy articles as decorative coating through LTD. Various nitrides, carbonitrides, borides and other refractory compounds, such as (Ti, Al)N, TiCN, CrN, are used as the coatings for special heavy-duty working conditions instead of TiN since 90s. More and more multilayer coatings are applied now substituting single layer ones. Duplex processes are under development.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.8
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• pp.1401-1405
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• 2010

We have successfully demonstrated of metal-insulator-semiconductor (MIS) capacitors with $HfO_2$/p-Si structures. The $HfO_2$ film was grown at $200^{\circ}C$ on H-terminated Si wafer by atomic layer deposition (ALD) system. TEMAHf and $H_2O$ were used as the hafnium and oxygen sources. A cycle of the deposition process consisted of 0.1 s of TEMAHf pulse, 10 s of $N_2$ purge, 0.1 s of $H_2O$ pulse, and 60 s of $N_2$ purge. The 5 nm thick $HfO_2$ layer prepared on Si substrate by ALD exhibited excellent electrical properties, including low leakage currents, no mobile charges, and a good interface with Si.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.12
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• pp.2420-2424
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• 2009

We have successfully demonstrated of metal-insulator-semiconductor (MIS) capacitors with $Al_2O_3/p-Si$ structures. The $Al_2O_3$ film was grown at $200^{\circ}C$ on H-terminated Si wafer by atomic layer deposition (ALD) system. Trimethylaluminum [$Al(CH_3)_3$, TMA] and $H_2O$ were used as the aluminum and oxygen sources. A cycle of the deposition process consisted of 0.1 s of TMA pulse, 10 s of $N_2$ purge, 0.1 s of $H_2O$ pulse, and 60 s of $N_2$ purge. The 5 nm thick $Al_2O_3$ layer prepared on Si substrate by ALD exhibited excellent electrical properties, including low leakage currents, no mobile charges, and a good interface with Si.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.21-24
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• 2000

Properties of thermoelectric power in PbS thin films by chemical bath deposition were investigated The qualified PbS thin film was gained with the amounts of Thiourea($4-8ml/{\ell}$ ), Triethanolamine (1-2ml) and NaOH(l0ml). The molecular ratio of Pb and S was 3 : 7. Satisfied crystallization rate and deposition rate of PbS were greater at $50^{\circ}C$ than at $30^{\circ}C$. The constant of thermoelectric power in PbS was nearly $ 500uv/^{\circ}k$. The PbS thin film was changed from p-type to n-type semiconductor at around $200^{\circ}C$. In case of heat treatment at $300^{\circ}C$, the sample kept the characteristic of p-type semiconductors up to $250^{\circ}C$.

• Journal of the Korean institute of surface engineering
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• v.22 no.1
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• pp.17-25
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• 1989

The structural Charactesties and adhesion of chemically vapor deposited TiN film on stain less steels have been investated as functions of deposition temperature, surface roughness of sub state, and types of substrates. The grain zine and the lattice parameter of TiN film decreased with decreasing roughness of substates. The(200) preferred orientation was developed dominatly and the lattlice parameter decreased as temperature intereased reardless of the surdless roughnessand type of the substrates used. The surface morphology of TiN film changed from bushed crystal to a plate and then to pyamidal dense crystals with an increase in the deposition temperature. The adhesion of TiN films increased with coating thinkness and decreased with surface roughness in general. The calculations using a Bejamin & Weaver's model have been compard. Maximum valuse of adhesion energy calculated using Laguier's model were W304=331Jm-2,w410=113Jm-2,andW430=107jm-2

• Journal of Korea Water Resources Association
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• v.46 no.5
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• pp.531-545
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• 2013

This paper was considered on the applicability of EFDC KUNSAN_SEDTRAN MODEL (2012) to calculate Gunsan Port sediment deposition height efficiently and to use for grasping its aspects quantitatively and providing its prevention measures reasonably based on well-known 3-dimensional EFDC sediment transport module. This model was calibrated and verified with various measured field data of A Report of Hydrological Variation on Kum River Estuary (2004). Due to the model calibration and relevant literature investigation for cohesive sediment parameters, settling velocity (WS), critical deposition stress (TD), reference surface erosion rate (RSE), critical erosion stress (TE) were identified as 2.2E-04m/s, 0.20 $N/m^2$, 0.003 $g/s{\cdot}m^2$, 0.40 $N/m^2$ respectivly on this model. In order to examine the applicability and precision of the model computation, the calculated model data of sediment deposition height at 13 stations for 71 days and suspended-sediment concentration at 2 stations, inner port and outer port for 15 days were compared and analyzed with the measured field data. As a result, the model applicability for sediment deposition height simulation was evaluated as NSE coefficient 0.86 and the precision for suspended-sediment concentration computation was evaluated as time averaged relative error (RE) 23%.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.213-216
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• 2001

The use of a thin film of indium between the ITO and the $n^{+}$-InP contact layers for InP/InGaAs HPTs was studied without degrading its excellent optical transmittance properties. ITO/$n^{+}$-InP ohmic contact was successfully achieved by the deposition of Indium and thermal annealing. The specific contact resistance of about 6.6$\times$$10^{-4}$$\Omega\textrm{cm}^2$ was measured by use of the transmission line method (TLM). However, as the thermal annealing was just performed to ITO/$n^{+}$-InP contact without the deposition of Indium between ITO and $n^{+}$-InP, it exhibited schottky characteristics. In the applications, the DC characteristics of InP/InGaAs HPTs with ITO emitter contacts was compared with that of InP/InGaAs HBTs with the opaque emitter contacts.