• Proceedings of the KSME Conference
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• 2000.04b
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• pp.45-50
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• 2000

A numerical investigation is made of three-dimensional buoyant convection of a Boussinesq-fluid in a vertical cylinder. The top and bottom endwalls are thermally insulated. Flow is driven by the substantial azimuthal variations in thermal boundary conditions. Comprehensive numerical solutions to the Navier-Stokes equations are obtained. The representative Rayleigh number is large, thus, the overall flow pattern is of boundary layer-type. Three-dimensional (low characteristics are described. Specially, the global flow and the heat transfer features are delineated when the severity of azimuthal variation of sidewall temperature n, is intensified. Temperature and velocity fields on the meridional planes and the planes of constant height are presented. The global flow weakens as n becomes large. The pattern of the local Nusselt number on the surface of cylinder is similar regardless of n. The convective gain in heat transfer activities is reduced as n increases.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.132-132
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• 2010

In the nano-scale Si processing, patterning processes based on multilevel resist structures becoming more critical due to continuously decreasing resist thickness and feature size. In particular, highly selective etching of the first dielectric layer with resist patterns are great importance. In this work, process window for the infinitely high etch selectivity of silicon oxynitride (SiON) layers and silicon nitride (Si3N4) with EUV resist was investigated during etching of SiON/EUV resist and Si3N4/EUV resist in a CH2F2/N2/Ar dual-frequency superimposed capacitive coupled plasma (DFS-CCP) by varying the process parameters, such as the CH2F2 and N2 flow ratio and low-frequency source power (PLF). It was found that the CH2F2/N2 flow ratio was found to play a critical role in determining the process window for ultra high etch selectivity, due to the differences in change of the degree of polymerization on SiON, Si3N4, and EUV resist. Control of N2 flow ratio gave the possibility of obtaining the ultra high etch selectivity by keeping the steady-state hydrofluorocarbon layer thickness thin on the SiON and Si3N4 surface due to effective formation of HCN etch by-products and, in turn, in continuous SiON and Si3N4 etching, while the hydrofluorocarbon layer is deposited on the EUV resist surface.

• Journal of the Korean Vacuum Society
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• v.11 no.1
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• pp.22-27
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• 2002

We investigated the crystal structure, resistivity, and chemical states change of the tungsten nitride $(WN_x)$ films prepared by reactive sputtering method with various $N_2$ flow ratios. Crystal structures of $WN_x$ films deposited at the $N_2$ flow ratios of 20%, 40%, and 60% were bcc $\beta$-W, amorphous, and fcc $W_2$N, respectively. Surface roughness of $WN_x$ film was smallest when the $WN_x$ film is amorphous. After the air exposure of $WN_x$ films, $WO_3$ layer was formed at the surface of all samples. Both the nitrogen content of $WN_x$ film and the binding energy of W $4f_{7/2}$ peaks increased with increasing $N_2$ flow ratio. However, after $Ar^+$ ion etching, the shift of W $4f_{7/2}$ peaks was not observed with $N_2$ flow ratio due to the amorphization of the $WN_x$ film surface. The resistivity of $WN_x$ films increased with increasing $N_2$ flow ratio.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.12
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• pp.262-269
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• 2016

This study examined the influent of a sulfur denitrification reactor using nitrified effluent from a batch type reactor. The denitrification efficiency was compared according to the injection type. The nitrogen removal effects were compared with the changes in the EBCT and nitrogen concentration of the influent to determine the optimal operation conditions with the selected injection type. A denitrification efficiency evaluation of a reactor according to the change in injection type and up-flow was performed using a lower organic concentration of the effluent than the down-flow because of the re-precipitation of desorbed microbes and spilled solids. In the up-flow type, organics were controlled by the low concentration than the down-flow type because of solid re-precipitation. The T-N removal efficiency of the up-flow type was 73.3~90.2%, which was more that 10% higher that down-flow type. This means that the up-flow type has a great advantage in removing T-N and organics. The T-N removal efficiency by EBCT at 1hr was 47.3%, and was 88.1% and 90.5% by EBCT 3hr and 5hr, respectively. Therefore, the optimal operation conditions to remove nitrogen was considered to be EBCT for 3hr. After careful consideration of rule of law and T-N removal effects, the T-N load factor in the reactor should remain below $0.443kgT-N/m^3{\cdot}day$ to maintain the legal total nitrogen concentration for discharge, which is 20mg/L.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.97-101
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• 1995

GaN films were prepared on Si(111) substrates by hydride vapor phase epitaxy (HVPE) on HCl-NH$_3$-N$_2$gas system. Effects of HCl gas flow rate on the film investigate under deposition conditions of flow time of 10min, 20min, 30min. The deposition rate increased with increasing HCl gas flow rate in the range of 10cc/min to 40cc/min and deposition time. Strung (00.2) oriented GaN film was obtained at a lower HCl flow rate and improved of the surface morphology.

• Journal of Korea Water Resources Association
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• v.45 no.10
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• pp.969-981
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• 2012

In this study, we analysed hydrologic variability in quantity and onset of annual maximum flow and low flow by impacts of the different phases of ENSO (El Ni$\tilde{n}$o Southern Oscillation) over the Han River Basin. The results show that annual maximum flow has increased statistically significant about 48.3% of all over the watershed. The onset of annual maximum flow was delayed in the west of the Han River basins and in the east of the basins was likely to be rapid onset. Also, this study shows that 7-day low flow was deceased statistically significant about 26.0% of the total area in the Han River Basin, and onset of 7-day low flow tends to be faster in the upper-middle basins of the Han River. The onset of annual maximum flow shows similar pattern during the CT (Cold tongue)/WP (Warm-pool) El Ni$\tilde{n}$o years, but annual maximum flow appeared less in 89.0% of all basins during the CT El Ni$\tilde{n}$o years. In addition, the onset of 7-day low flow tended to be faster about 17 days on average during the WP El Ni$\tilde{n}$o years, and 72.7% of the basins show significant increase during the CT El Ni$\tilde{n}$o years. Consequently, it was found that the different phases of CT/WP El Ni$\tilde{n}$o have effects on sensitivity to variability in quantity and onset of water resources over the Han River Basin. We expect that the present diagnostic study on hydrological variability during different phases of ENSO will provide useful information for long-term prediction and water resources management.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.14 no.4
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• pp.839-846
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• 1994

This paper presents a simultaneous solution algorithm for one-dimensional unsteady flow routing through a dendritic channel system. This simulations solution algorithm is based on the double-sweep method and utilizes separate recursion equations for continuity, momentum and energy equations for each of the individual components of a dendritic channel system. Through separate recursion equations for each of the components. the new algorithm converts a dendritic channel network problem into a single-channel problem. The new algorithm is utilized in conjunction with a linearized unsteady flow model using full dynamic flow equations. The required computer storage for the coefficient matrix of the whole system is reduced significantly from the $2N{\times}2N$ matrix to a $2N{\times}4$ matrix, where N is the number of cross sections used in the computation of flow variables in a dendritic channel system. The algorithm presented in this paper provides an efficient and accurate modeling of unsteady flow events through a dendritic channel system.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.33 no.6
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• pp.568-572
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• 2009

We present a ternary microfluidic multiplexer unit, capable to address three flow channels using a pair of control lines with two different threshold pressure valves. The previous binary multiplexer unit addresses only two flow channels using a pair of control line with identical threshold pressure valves, thus addressing $2^{n/2}$ flow channels using n control lines. The present ternary multiplexer addressing three flow channels using a pair of control lines, however, is capable to address $3^{n/2}$ flow channels using n control lines with two different threshold pressure valves. In the experimental study, we characterized the threshold pressure and the response time of the valves used in the ternary multiplexer. From the experimental observation, we also verified that the present ternary multiplexer unit could be operated by two equivalent valve operating conditions: the different static pressures and dynamic pressures at different duty ratio. And then, $3{\times}3$ well array stacking ternary multiplexers in serial is addressed in cross and plus patterns, thus demonstrating the individual flow channel addressing capability of the ternary multiplexer. Thus, the present ternary multiplexer reduces the number of control lines for addressing flow channels, achieving the high well control efficiency required for simple and compact microfluidic systems.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2007.11a
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• pp.389-392
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• 2007

The study focused on the flow-supply characteristics of the liquid oxidizer $N_2O$ reserved in a tank without any pressurization devices. It was taken accounted that the change of material properties to temperature in the oxidizer tank and the discharge coefficients of both liquid and gas for more precise prediction of the supply mass-flow rate of $N_2O$ oxidizer. To validate the prediction model derived in the study, the experiments were conducted and compare with the theoretical results.

• Journal of Korean Ophthalmic Optics Society
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• v.15 no.4
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• pp.361-366
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• 2010

Purpose: HCD ion plating apparatus by hollow cathod discharge method was fabricated and TiN films were deposited on stainless steel by this apparatus with increasing in $N_2$ gas flow and the fine color changes of TiN films were analyzed. Methods: The spectroradiometer and spectrophotometer were used to observe optically the fine color changes of TiN thin films, and XPS was used to analyze the compositions of TiN thin films with increasing in $N_2$ gas flow. Results: The color coordinate of TiN thin film with $N_2$ 120 sccm gas flow showed (0.382, 0.372) which had the mixed colors of gold and silver, and the color coordinate changed to the increasing value of (x,y) with increasing in $N_2$ gas flow which indicated the deep gold color. It was found that the slopes of the reflectances at 550nm were increased with increasing in $N_2$ gas flow. And from the Ti scans using XPS, it was found that the peak heights of 455 eV derived from TiN composition were increased with increasing in $N_2$ gas flow, while the peak heights of 459 eV from $TiO_2$ composition were decreased. Conclusions: The results obtained above were that the color of TiN film with 120 sccm $N_2$ gas flow had been observed from the mixed color of silver and gold due to TiC, $N_2$, TiN on the surface and TiN, $N_2$ inside film, and the color of TiN films changed a deep gold color with increasing in $N_2$ gas flow due to increasing TiN composition.