• Bulletin of the Korean Chemical Society
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• 제33권12호
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• pp.4052-4058
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• 2012

The composite photocatalyst, N-$TiO_2$ loaded with $Ni_2O_3$, was prepared by $N_2$ plasma treatment. X-ray diffraction, X-ray fluorescence, $N_2$ adsorption, UV-vis spectroscopy, photoluminescence, and X-ray photoelectron spectroscopy were used to characterize the prepared $TiO_2$ samples. The results indicated that the band gap energy was decreased obviously by nitrogen doping, whereas loading of $Ni_2O_3$ did not influence the band gap and visible light absorption. The photocatalytic activities were tested in the degradation of 2,4,6-trichlorophenol (TCP) under visible light. The photocatalytic activity and stability of composite photocatalyst were much higher than that of catalyst modified with nitrogen or $Ni_2O_3$ alone. The synergistic effect of doping nitrogen and $Ni_2O_3$ over $TiO_2$ was investigated.

• 호남수학학술지
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• 제28권3호
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• pp.395-398
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• 2006

In this note, for any given positive integer n, we determine all the continuous solutions f : R ${\rightarrow}$ R of the integral-functional equation $f^n(x)=n_{_o}{^x}f(t)dt$.

• Kyungpook Mathematical Journal
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• 제57권4호
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• pp.581-600
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• 2017

A classical result of A. Cohn states that, if we express a prime p in base 10 as $$p=a_n10^n+a_{n-1}10^{n-1}+{\cdots}+a_110+a_0$$, then the polynomial $f(x)=a_nx^n+a_{n-1}x^{n-1}+{\cdots}+a_1x+a_0$ is irreducible in ${\mathbb{Z}}[x]$. This problem was subsequently generalized to any base b by Brillhart, Filaseta, and Odlyzko. We establish this result of A. Cohn in $O_K[x]$, K an imaginary quadratic field such that its ring of integers, $O_K$, is a Euclidean domain. For a Gaussian integer ${\beta}$ with ${\mid}{\beta}{\mid}$ > $1+{\sqrt{2}}/2$, we give another representation for any Gaussian integer using a complete residue system modulo ${\beta}$, and then establish an irreducibility criterion in ${\mathbb{Z}}[i][x]$ by applying this result.

• 한국연소학회지
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• 제4권1호
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• pp.27-38
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• 1999

We constructed a wire-cylinder type pulsed corona discharge system for $NO_x$ removal, which was operated in room temperature. A emission spectrometer was built with a boxcar averager and monochrometer equipped with photo-multiplier tube detector. The sensitivity of the emission spectrometer was greatly improved by synchronizing the emission spectrometer with pulsed corona discharge system using a triggered spark-gap switch. $N_2$ spectrum($c^3{\Pi}_u{\rightarrow}X^1{\Sigma}_g{^+}$) was measured in the range of 300 - 450 nm and oxidizing OH radical emission($A^2{\Sigma}^+{\rightarrow}X^2{\Pi}$) was measured in case $N_2$ was supplied with water bubbling. As wet gas composition of inlet $N_2$ supplied in the discharge system increased, the intensity of OH emission was increased and saturated at wet gas composition 50%. We also investigated additive effect of $C_2H_4,\;H_2O,\;H_2O_2$ on the intensity of OR emission and $NO/NO_2/NO_x$ reduction and analysed the related reaction mechanism in corona discharge process. $H_2O_2$ additive increased the intensity of OH emission and $NO/NO_x$ reduction.

• 한국세라믹학회지
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• 제24권5호
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• pp.491-499
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• 1987

Silicon nitride powder synthesized from Kimcheon quartzite and commercial reagents, AlN and Y2O3 powders were used to prepare the partially and fully stabilized Y-${\alpha}$-Sialon ceramics by the pressureless sintering at 1800$^{\circ}C$ for 2 hours in N2 atmosphere. Good mechanical properties of the prepared Y-${\alpha}$-Sialon ceramics were found over 0.4∼0.6 of the Yttrium solubility range, X, in the equation Yx(Si12-4.5x, Al4.5x)(O1.5x, N16-1.5x). The properties of these prepared Y-${\alpha}$-Sialon ceramics were compared with those prepared in the same way from a commercial Toshiba Si3N4 powder.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1999년도 추계학술발표강연 및 논문개요집
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• pp.82-82
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• 1999

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.449-449
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• 2010

유기발광소자(organic light-emitting diodes, OLEDs)는 저공정비용, 경량화, 가용성 및 대면적화 등의 장점으로 조명 분야와 디스플레이 분야로의 응용 가능성으로 인해 크게 주목을 받아 왔다. 이러한 OLED 소자의 고효율, 고휘도 및 저소비전력 등을 구현하기 위해서는 전극으로부터 전하 주입 층으로 효율적인 전하 주입이 요구된다. 즉, 각 전극의 폐르미 준위로부터 전하 전도준위대로의 전하주입 장벽이 없어야 한다. 본 연구에서는 홀 주입장벽이 없는 정공주입 층으로 $MoO_x$(molybdenum oxide)가 도핑된 NPB(N, N'-diphenyl-N, N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine) 층을 사용하여 hole-only 소자를 제작하고 전류-전압 특성을 통해 양극으로부터 홀주입 층으로의 hole-ohmic 특성을 고찰했다. 또한, 전자 주입장벽이 없는 전자주입 층으로 $C_{60}$(fullerene)/LiF(lithum fluoride)의 이종 층을 사용하여 electron-only 소자를 제작하고 음극으로부터 전자주입 층으로의 전자 ohmic 특성을 조사했다. 또한, 전극으로부터 전하주입 층으로 ohmic 특성을 더 자세히 이해하기 위하여 전하주입 층의 자외선 광방출 스펙트럼(ultraviolet photoemission spectra)을 조사했다. 한편, glass/ITO/$MoO_x$-doped NPB (x%: x=0,25, 50 및 75; 5nm)/NPB (63nm)/$Alq_3$ (37nm)/$C_{60}$ (5nm)/LiF (1nm)/Al (100nm)로 구성된 all-ohmic OLED 소자의 발광특성은 $MoO_x$의 도핑 농도가 25%이상일 때 최적의 특성을 보여줬다. 이러한 현상은 정공주입 층에서 p형 도핑 농도의 증가에 따른 정공 농도의 증가에 기인한다. 또한 $MoO_x$의 도핑 농도의 증가에 따라 정공주입 층의 new gap state와 전극의 페르미 준위의 pinning에 기인한다. 25%의 $MoO_x$을 가진 OLED소자는 7.2V의 낮은 전압에서 $58300 cd/m^2$의 높은 휘도를 보여줬다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.340-342
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• 1995

We prepared $LiCo_{1-x}Ni_{x}O_2$ by reacting stoichiometric mixture of LiOH.$H_2O$, $CoCO_3$.$xH_2O$ and $Ni(OH)_2$(mole ratio respectively) and heating at $850^{\circ}C$ for 5n. In the result of X-ray diffraction analysis, along fluctuation of the function of x in $LiCo_{1-x}Ni_{x}O_2$(003) peak and (104) peak indensities and ratio were varied. We awared through XRD that from 0 to 0.5 at x in $LiCo_{1-x}Ni_{x}O_2$ is well formed for hexagonal structure at one step heat treatment($850^{\circ}C$), but if Ni involve at $LiCo_{1-x}Ni_{x}O_2$ hexagonal structure is not well formed. In the result of charge/discharge tests charge/discharge capacity and effiency is different about various cathode. Therefore, the appropriate charge/discharge method must be selected for good characteristics.

• 한국진공학회지
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• 제6권S1호
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• pp.75-79
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• 1997

Optical and mechanical characteristics of $TiO-2, ZrO_2 \;and\; SiO_xN_y$ thin films prepared by ion assisted deposition (IAD) were investigated. IAD films were bombarded by Ar or nitrogen ion beam from a Kaufman ion source while they were grown in as e-beam evaporator. The result shows that the Ae IAD increases the refractive index and packing density of $TiO_2 films close to those of the bulk. For $ZrO_2$ films the Ar IAD increases the average refractive index decreases the negative inhomogeneity of refractive index and reverses to the positive inhomogeneity. The optical properties result from improved packing density and denser outer layer next to air The Ar-ion bombardment also induces the changes in microstructure of $ZrO_2$ films such as the preferred (111) orientation of cubic phase increase in compressive stress and reduction of surface roughness. Inhomogeneous refractive index SiOxNy films were also prepared by nitrogen IAD and variable refractive index of $SiO_xN_y$ film was applied to fabricate a rugate filter.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.87.1-87.1
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• 2012

넓은 밴드갭 (3.37eV)과 높은 엑시톤 결합에너지 (60meV)를 가지는 ZnO 물질은 ultra violet light 센서 및 light emitting diode (LED)의 재료로써 많은 연구가 진행되고 있다. 특히 나노와이어 구조를 이용하여 소자를 만들 경우 양자효과와 1차원적 캐리어 수송경로 효과로 인하여 그 특성을 보다 향상 시킬 수 있다. 나노와이어를 이용한 이종접합 p-n 다이오드를 제작하기 위하여 ZnO와 격자상수가 비슷한 GaN, NiO, CoO와 같은 물질들이 나노구조 접합에 많이 쓰이고 있지만, 격자상수 차이로 인해서 접합부분 캐리어 수송효율이 떨어지는 단점을 가지고 있다. n-type과 p-type ZnO를 만들어 동종 접합을 만들 경우 이러한 문제점을 극복할 수 있지만, 도핑되지 않은 ZnO가 n-type을 특성을 나타내기 때문에 안정적인 p-type ZnO 합성에 대한 연구가 필수적이다. 본 연구에서는 안정적인 p-type ZnO 합성을 위해서 수열합성법을 이용하여 phosphorus (P) 도핑을 하였고, 나노와이어 diode 구조를 만들었다. P 도핑으로 인한 격자상수 변화는 x-ray diffraction (XRD)를 사용하여 확인하였고, x-ray photoelectron spectroscopy (XPS)를 통해 도핑 원소를 분석하였으며, 이때의 recification ratio, turn-on voltage 등의 전기적 특성을 평가하였다.