• Title/Summary/Keyword: N $O_{}$ x/

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Synthesis and Characterization of Tetranuclear Molybdenum(Ⅵ) Complexes with Butylamidoxime Derivatives (부틸아미드옥심 유도체의 몰리브덴(Ⅵ) 사핵 착물의 합성과 성질)

  • Roh, Soo-Gyun;Oh, Sang Oh
    • Journal of the Korean Chemical Society
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    • v.39 no.7
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    • pp.552-558
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    • 1995
  • The tetranuclear complexes, $X_2[M_{O4}O_12{R'C(NH_2)NO}_2](X= n-Bu_4N^+$, $R'=(CH_3)_2CH$, $CH_3CH_2CH_2$, $CH_3SCH_2$; $X=(CH_3)_2CHC(=NH_2)NH_2^+$, $R'=(CH_3)_2CH$; $X = CH_3CH_2CH_2C(=NH_2)NH_2^+$, $R'=CH_3_CH_2CH_2$; $X=CH_3SCH_2C(=NH_2)NH_2^+$, $R'=CH_3SCH_2)$ have been synthesized by the reactions of monomeric and polynuclear complexes with isobutyl-, butyl- and thiomethylacetamidoxime. The prepared complexes were identified by elemental analysis, infrared, $^1H$ NMR and $^{13}C$ NMR spectroscopy. The structure of complex ${(CH_3)_2CHC(NH_2)_2}_2[M_{O4}O_{12}{(CH_3)_2CHC(NH_2)NO}_2]$ was determined by X-ray single crystal diffraction. Crystal data are follows: Monoclinic, $P2_{1/c}$, $a=10.168(3){\AA}$, $b=11.768(1){\AA}$, $c=13.557(1){\AA}$, ${\beta}=102.08(1)^{\circ}$, $V=1586.2(5){\AA}^3$, Z=2, final R=0.026 for 2951($F_0>3s(F_0)$). This complex is composed of a planar cyclic $[Mo_4({\mu}-O)_4]$ and two ${\mu}_4$-amidoximate.

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ON NEGATIVE MOMENTS OF PROSITIVE RANDOM VARIABLES

  • Park, Han Shick
    • The Mathematical Education
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    • v.11 no.1
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    • pp.25-27
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    • 1972
  • 본논문은 n이 음이 아닌 정수로서 X+A>O 일 때, f(x)=(X+A)$^{-n}$ 모양의 확률변수 X의 기대치를 구하는 문제를 연구한 것이다. 이 문제는 이미 CHAO, STRAWDERMAN에 의해서 연구된바 있으나, 여기서는 더욱 간단하게 단순한 결과를 얻었으며 n=1일 때는 양 결과는 일치한다.

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Microstructure and Properties of $(Sr_{1-x}Ca_x)TiO_3$Ceramic Thin film ($(Sr_{1-x}Ca_x)TiO_3$세라믹 박막의 미세구조 및 특성)

  • Kim, Jin-Sa;Lee, Jun-Ung
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.50 no.10
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    • pp.504-508
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    • 2001
  • The$(Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode $(Pt-TiN /SiO_2Si)$ using RF sputtering method at various deposition temperature. The crystallinity of thin films was increased with increased of deposition temperature n the temperature range of 200~500 $[^{\circ}C]$. The capacitance changes almost linearly in temperature ranges of -80~+90$[^{\circ}C]$. All SCT thin films used in the study the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz]. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature.

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Oxygen Adsorption/Desorption Reaction of Pd-$SnO_x$-$Si_3N_4$-$SiO_2$-Si-Al Capacitor (D.C. 전압 인가에 의한 Pd-$SnO_x$-$Si_3N_4$-$SiO_2$-Si-Al 캐패시터의 산소흡착/탈착 반응)

  • Lee, Jae-Hong;Lee, Joo-Hun;Kim, Chang-Kyo
    • Proceedings of the KIEE Conference
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    • 1997.07d
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    • pp.1222-1225
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    • 1997
  • A gaseous oxygen detector has been developed in a configuration of Pd-$SnO_x$-$Si_3N_4$-$SiO_2$-Si-Al with highly resistive $SnO_x$ layer as the oxygen adsorptive element. In this paper, we present the characteristics of the device in response to oxygen adsoption/desorption under applied d.c. bias. Experimental results showed that the oxygen adsorptive response by the device was reduced significantly under a positive gate bias, for all experimental regions of $O_2$ partial pressure. On the other hand, the application of a negative gate bias increased the device's adsorptive response of oxgyen. A device model concerning this electroadsorption/desorption behavior of the device is provided.

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SOME RESULTS ON STARLIKE TREES AND SUNLIKE GRAPHS

  • Mirko, Lepovic
    • Journal of applied mathematics & informatics
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    • v.11 no.1_2
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    • pp.109-123
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    • 2003
  • A tree is called starlike if it has exactly one vertex of degree greate. than two. In [4] it was proved that two starlike trees G and H are cospectral if and only if they are isomorphic. We prove here that there exist no two non-isomorphic Laplacian cospectral starlike trees. Further, let G be a simple graph of order n with vertex set V(G) : {1,2, …, n} and let H = {$H_1$, $H_2$, …, $H_{n}$} be a family of rooted graphs. According to [2], the rooted product G(H) is the graph obtained by identifying the root of $H_{i}$ with the i-th vertex of G. In particular, if H is the family of the paths $P_k_1,P_k_2,...P_k_2$ with the rooted vertices of degree one, in this paper the corresponding graph G(H) is called the sunlike graph and is denoted by G($k_1,k_2,...k_n$). For any $(x_1,x_2,...,x_n)\;\in\;{I_*}^n$, where $I_{*}$ = : {0,1}, let G$(x_1,x_2,...,x_n)$ be the subgraph of G which is obtained by deleting the vertices $i_1,i_2,...i_j\;\in\;V(G)\;(O\leq j\leq n)$, provided that $x_i_1=x_i_2=...=x_i_j=o.\;Let \;G[x_1,x_2,...x_n]$ be characteristic polynomial of G$(x_1,x_2,...,x_n)$, understanding that G[0,0,...,0] $\equiv$1. We prove that $G[k_1,k_2,...,k_n]-\sum_{x\in In}[{\prod_{\imath=1}}^n\;P_k_i+x_i-2(\lambda)](-1)...G[x_1,x_2,...,X_n]$ where x=($x_1,x_2,...,x_n$);G[$k_1,k_2,...,k_n$] and $P_n(\lambda)$ denote the characteristic polynomial of G($k_1,k_2,...,k_n$) and $P_n$, respectively. Besides, if G is a graph with $\lambda_1(G)\;\geq1$ we show that $\lambda_1(G)\;\leq\;\lambda_1(G(k_1,k_2,...,k_n))<\lambda_1(G)_{\lambda_1}^{-1}(G}$ for all positive integers $k_1,k_2,...,k_n$, where $\lambda_1$ denotes the largest eigenvalue.

Coating of NaX Zeolite on the Porous Ceramics (다공성 세라믹스에 NaX 제올라이트의 코팅)

  • 하종필;서동남;김익진
    • Proceedings of the KAIS Fall Conference
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    • 2000.10a
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    • pp.27-29
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    • 2000
  • 다공성 세라믹 기질에 제올라이트의 코팅은 기체 분리용 membrane으로 매우 효과적이다. 수열합성법으로 NaX 제올라이트를 다공성 cordierite와 cordierite, mullite 복합기질의 표면에 코팅하는 과정에서 H₂O/Al₂O₃ 몰비를 500, 1000으로 증가시키면서 코팅 특성의 변화와 코팅 속도를 측정한 결과 몰비가 감소할수록 코팅층에 NaA 제올라이트의 존재비가 증가하였으며, 코팅층의 형성 속도는 증가하였다. H₂O/Al₂O₃ 1000 몰에서는 반응 9일에 매우 치밀하고 균일한 NaX 제올라이트 코팅층을 얻을 수 있었으며, H₂O/Al₂O₃ 1000 몰에서는 반응3일에서 1000 몰의 9일과 같은 결과를 얻을 수 있었다.

The Effects of $SiN_x$ Dielectric Thin Films on SAW Properties of the High Frequency SAW Filter for Cellular Communication System ($SiN_x$유전 보호막이 이동통신용 고주파 SAW필터의 특성에 미치는 영향)

  • Lee, Yong-Ui;Lee, Jae-Bin;Kim, Hyeong-Jun;Kim, Yeong-Jin;Yang, Hyeong-Guk;Park, Jong-Cheol
    • Korean Journal of Materials Research
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    • v.5 no.6
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    • pp.650-656
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    • 1995
  • High frequency SAW filters for cellular communications were fabricated by metallizing 36$^{\circ}$Y-X LiTaO$_3$piezoelectric substrate with IIDT type electrodes. It was found that the center frequency of the filter was lowered than as designed. In order to overcome such a drawback and enable a fine tuning of its center frequency, dielectric SiN$_{x}$ thin films were deposited on LiTaO$_3$substrate by PECVD as passivation layer and then frequency responses were also characterized. As a result, the center frequency of the filter could be shifted to a higher frequency with increasing the thickness of SiN$_{x}$ film, because SAW velocity increased with increasing the ratio of the thickness of dielectric thin film to wavelength. The insertion loss of the filter, however, became larger with increasing the thickness of SiN$_{x}$ film.

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The Characteristics of Multi-layer Structure LED with MgxZn1-xO Thin Films (MgxZn1-xO를 활용한 Multi-layer 구조 LED 특성에 관한 연구)

  • Son, Ji-Hoon;Kim, Sang-Hyun;Jang, Nak-Won;Kim, Hong-Seong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.10
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    • pp.811-816
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    • 2012
  • The effect of co-sputtering condition on the structural properties of $Mg_xZn_{1-x}O$ thin films grown by RF magnetron co-sputtering system was investigated for manufacturing ZnO/MgZnO structure LED. $Mg_xZn_{1-x}O$ thin films were grown with ZnO and MgO target varying RF power. Structural properties were investigated by X-ray diffraction (XRD) and Energy dispersive spectroscopy (EDS). The ZnO thin films have sufficient crystallinity on the high RF power. As RF power of ZnO target increased, the contents of MgO in the $Mg_xZn_{1-x}O$ film decreased. LED was manufactured using ZnO/MgZnO multi-layer on p-GaN/$Al_2O_3$ substrate. Threshold voltage of multi-layer LED was appeared at 8 V, and it was luminesced at wave length of 550 nm.

The Properties of Passivation Films on Al2O3/SiNX Stack Layer in Crystalline Silicon Solar Cells (결정질 실리콘 태양전지의 Al2O3/SiNX 패시베이션 특성 분석)

  • Hyun, Ji Yeon;Song, In Seol;Kim, Jae Eun;Bae, Soohyun;Kang, Yoonmook;Lee, Hae-Seok;Kim, Donghwan
    • Current Photovoltaic Research
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    • v.5 no.2
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    • pp.63-67
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    • 2017
  • Aluminum oxide ($Al_2O_3$) film deposited by atomic layer deposition (ALD) is known to supply excellent surface passivation properties on crystalline Si surface. The quality of passivation layer is important for high-efficiency silicon solar cell. double-layer structures have many advantages over single-layer materials. $Al_2O_3/SiN_X$ passivation stacks have been widely adopted for high- efficiency silicon solar cells. The first layer, $Al_2O_3$, passivates the surface, while $SiN_X$ acts as a hydrogen source that saturates silicon dangling bonds during annealing treatment. We explored the properties on passivation film of $Al_2O_3/SiN_X$ stack layer with changing the conditions. For the post annealing temperature, it was found that $500^{\circ}C$ is the most suitable temperature to improvement surface passivation.

The Relation Between a Visible-light Photocatalytic Activity of TiO2-xNx and NH3 Amount/the Period of Grinding Time (유성 볼밀을 통해 제조된 TiO2-xNx 광촉매의 가시광 활성도와 NH3양 및 분쇄시간과의 상관 관계)

  • Kang, In-Cheol;Ko, Jun-Bin;Han, Jae-Kil;Kim, Kwang-Hee;Choi, Sung-Chang
    • Journal of Powder Materials
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    • v.16 no.3
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    • pp.196-202
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    • 2009
  • A visible-light photoactive $TiO_{2-x}N_x$ photocatalyst was synthesized successfully by means of cogrinding of anatase-$TiO_2(a-TiO_2)$ in $NH_3$ ambient, followed by heat-treatment at $200^{\circ}C$ in air environment. In general, it is well known that the grinding-operation induces phase transformation of a-$TiO_2$ to rutile $TiO_2$. This study investigates the influence of the amount of $NH_3$ gas on the phase transformation rate of a-$TiO_2$ and enhancement of visible-light photocatalytic activity, and also examines the relation between the photocatalytic activity and the period of grinding time. The phase transformation rate of a-$TiO_2$ to rutile is retarded with the amount of NH3 injected. And the visible-light photocatalytic activity of samples, was more closely related to the period of grinding time than $NH_3$ amount injected, which means that the doping amount of nitrogen into $TiO_2$ more effective to mechanical energy than $NH_3$ amount injected. XRD, XPS, FT-IR, UV-vis, Specific surface area (SSA), NOx decomposition techniques are employed to verify above results more clearly.