• Bulletin of the Korean Chemical Society
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• v.33 no.4
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• pp.1269-1274
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• 2012

A visible light responsive N, Mo co-doped $TiO_2$ were prepared by sol-gel method. X-ray diffraction, TEM, $N_2$ adsorption, UV-vis spectroscopy, photoluminescence, and X-ray photoelectron spectroscopy were used to characterize the prepared $TiO_2$ samples. Doping restrained the phase transformation from anatase to rutile and reduced the particle sizes. The band gap was much narrowed after N, Mo co-doping. The photocatalytic activities were tested in the degradation of an aqueous solution of a reactive dyestuff, methylene blue, under visible light. The photocatalytic activities of doped $TiO_2$ were much higher than that of neat $TiO_2$. The photocatalytic stability of N, Mo co-doped $TiO_2$ was much better than that of N doped $TiO_2$.

• Korean Journal of Materials Research
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• v.11 no.2
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• pp.71-75
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• 2001

The reaction stability of nickel with side-wall materials of SiO$_2$ and Si$_3$N$_4$ on p-type 4"(100) Si substrate were investigated. Ni on 1300 $\AA$ thick SiO$_2$ and 500 $\AA$ - thick Si$_3$N$_4$ were deposited. Then the samples were annealed at 400, 500, 750 and 100$0^{\circ}C$ for 30min, and the residual Ni layer was removed by a wet process. The interface reaction stability was probed by AES depth Profiling. No reaction was observed at the Ni/SiO$_2$ and Ni/Si$_3$N$_4$, interfaces at 400 and 50$0^{\circ}C$. At 75$0^{\circ}C$, no reaction occurred at Ni/SiO$_2$ interface, while $NiO_x$ and Si$_3$N$_4$ interdiffused at Ni/Si$_3$N$_4$ interface. At 100$0^{\circ}C$, Ni layers on SiO$_2$ and Si$_3$N$_4$ oxidized into $NiO_x$ and then $NiO_x$ interacted with side-wall materials. Once $NiO_x$ was formed, it was not removed in wet etching process and easily diffused into sidewall materials, which could lead to bridge effect of gate-source/drain.

• Clean Technology
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• v.17 no.2
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• pp.142-149
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• 2011

The adsorption and desorption behaviors of NO and $N_2O$ over two mixed oxide catalysts, AlCoPd (1/1/0.05) and AlCoFe (1/1/2), have been investigated for the lean $NO_x$ trap applications. The catalysts showed good adsorption capabilities for NO and $N_2O$ without needing oxidation step. The adsorption decreased a lot when they are co-adsorbed with oxygen. While NO kept high adsorbability and selectivity with respect to oxygen, those of $N_2O$ decreased sharply. From the TPD results, NO and $N_2O$ are considered to decompose into nitrogen and oxygen in the higher temperature range and the oxygen seems to be strongly attached to the catalysts even at high temperature.

• Journal of the Korean Ceramic Society
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• v.39 no.3
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• pp.272-277
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• 2002

Aluminum nitride (AlN) powders and whiskers were synthesized by a modified carbothermal reduction and nitridation where a ($NH_4)[Al(ethylenediaminetetraacetate)]{\cdot}2H_2O$ complex is used as precursor. The AlN powders were obtained by calcining the complex without mixing any carbon source under a flow of nitrogen in the temperature range 1200∼1500$^{\circ}$C and then burning out the residual carbon. The nitridation process was investigated by $^{27}Al$ magic-angle spinning (MAS) unclear magnetic resonance, infrared spectroscopy and X-ray diffraction. The complex is pyrolyzed, converted to ${\rho}$- and ${\gamma}$- alumina and then nitridated to AlN without ${\gamma}-{\alpha}$ alumina transition. The morphology of ${\gamma}$-alumina, when it was converted to AlN, was retained, strongly indicating that ${\gamma}$-alumina is converted to AlN through solid-state $AlO_xN_y$, not through gaseous intermediates such as aluminum and aluminaum suboxides. AlN whiskers were obtained, when a (0001) sapphire was used as a catalyst.

• Journal of Sensor Science and Technology
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• v.6 no.3
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• pp.200-206
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• 1997

Using $SiCl_{2}H_{2}$, $NH_{3}$ and $N_{2}O$, we have fabricated silicon oxynitride ($Si_{x}O_{y}N_{z}$) layers on thermally oxidized silicon wafer by low pressure chemical vapor deposition. Three different compositions were achieved by controlling gas flow ratios($NH_{3}/N_{2}O$)) to 0.2, 0.5 and 2 with fixed gas flow of $SiCl_{2}H_{2}$. Ellipsometry and high frequency capacitance-voltage(HFCV) measurements were adapted to investigate the difference of the refractive index, dielectric constant, and composition, respectively. Regardless of nitride content, silicon oxynitrides had similar stability to silicon nitrides. The relative standing of alkali ion sensitivity in silicon oxynitride layers was influenced by nitride content. The better alkali ion-sensitivity was achieved by increasing oxide content in bulk of silicon oxynitrides.

• Bulletin of the Korean Mathematical Society
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• v.49 no.6
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• pp.1311-1326
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• 2012

We are concerned with the multiplicity of semiclassical solutions of the following Schr$\ddot{o}$dinger system involving critical nonlinearity and magnetic fields $$\{-({\varepsilon}{\nabla}+iA(x))^2u+V(x)u=H_u(u,v)+K(x)|u|^{2*-2}u,\;x{\in}\mathbb{R}^N,\\-({\varepsilon}{\nabla}+iB(x))^2v+V(x)v=H_v(u,v)+K(x)|v|^{2*-2}v,\;x{\in}\mathbb{R}^N,$$ where $2^*=2N/(N-2)$ is the Sobolev critical exponent and $i$ is the imaginary unit. Under proper conditions, we prove the existence and multiplicity of the nontrivial solutions to the perturbed system.

• Journal of the Korean Ceramic Society
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• v.37 no.1
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• pp.50-56
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• 2000

Precursor gels with the composition of xZrO2·(100-x)SiO2 systems (x=10, 20 and 30 mol%) were prepared by the sol-gel method. Kinetic parameters, such as activation energy, Avrami's exponent, n, and dimensionality crystal growth value, m, have been simultaneously calculated from the DTA data using Kissinger and Matusita equations. The crystallite size dependence of tetragonal to monoclinic transformation of ZrO2 was investigated using XRD, in relation to the fracture toughness. The crystallization of tetragonal ZrO2 occurred through 3-dimensional diffusiion controlled growth(n=m=2) and the activation energy for crystallization was calculated using Kissinger and Matusita equations, as about 310∼325±10kJ/mol. The growth of t-ZrO2, in proportion to the cube of radius, increased with increasing heating temperature and hteat-treatment time. It was suggested that the diffusion of Zr4+ ions by Ostwald ripening was rate-limiting process for thegrowth of t-ZrO2 crystallite size. The fracture toughness of xZrO2·(100-x)SiO2 systems glass ceramics increased with increasing crystallite size of t-ZrO2. The fracture toughness of 30ZrO2·70SiO2 system glass ceramics heated at 1,100℃ for 5h was 4.84 MPam1/2 at a critical crystaliite size of 40 nm.

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.11a
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• pp.170-170
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• 1996

• Korean Journal of Crystallography
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• v.6 no.1
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• pp.27-35
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• 1995

The crystal structure of 1-tert-butoxycarbonyl-4-[N-(tert-butoxycarbonyl)-N-(ethoxycarbonylmethyl)amino]-3-phenylsulfonylpyrrolidind [C24H36O8N2S] has been from single crystal x-ray diffraction study ; C24H36O8N2S triclinic, p1, a=11.363(8)Å, b=11.589(6)Å, c=11.013(10)Å,α=95.32(6)°,β=98.64(7)°,γ=79.57(5)°,V=1406.8(18)Å3, t=293K, Z=2, CuKα(λ=1.5418Å). The molecular structure was solved by diredt method and refined by full-matrix least squares to a final R=9.78% for 3621 unique observed [F≥4σ(F)] reflections and 703 paramenters.

• Journal of the Korean Ceramic Society
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• v.28 no.2
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• pp.130-140
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• 1991

The powders of the system Si3N4-Y2O3-AlN were prepared using Si(OC2H5)4 and YCl3.6H2O together with commercial AlN powder. $\alpha$-Si3N4 was prepared by the carbothermal reduction and nitridation of the hydrolyzed gel at 135$0^{\circ}C$ for 10h in N2 atmosphere. YCl3.6H2O was observed to be changed to Y2O3 during the reaction. $\alpha$-Sialon(X=0.2, 0.4, 0.6) ceramics were obtained by hot-pressing the Si3N4-Y2O3-AlN mixture at 178$0^{\circ}C$ for 1h under 30 MPa. The content of $\alpha$-Sialon increased with increasing metal solubility(x value) and $\alpha$-Sialon single phase was obtained at the metal solubility of 0.6. With increasing metal solubility, flexural strength, fracture toughness and thermal shock resistence were decreased, while the microhardness was increased. Large elongated $\beta$-Si3N4 grains were mainly observed at lower metal solubility. Mechanical prorerties of the sintered ceramics with X=0.2 were measured as follows : flexural strength ; 650 MPa, fracture toughness ; 3.63 MN/m3/2, hardness ; 14.7 GPa, thermal shock resistence temperature ; 58$0^{\circ}C$.