• Bulletin of the Korean Chemical Society
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• 제33권4호
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• pp.1269-1274
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• 2012

A visible light responsive N, Mo co-doped $TiO_2$ were prepared by sol-gel method. X-ray diffraction, TEM, $N_2$ adsorption, UV-vis spectroscopy, photoluminescence, and X-ray photoelectron spectroscopy were used to characterize the prepared $TiO_2$ samples. Doping restrained the phase transformation from anatase to rutile and reduced the particle sizes. The band gap was much narrowed after N, Mo co-doping. The photocatalytic activities were tested in the degradation of an aqueous solution of a reactive dyestuff, methylene blue, under visible light. The photocatalytic activities of doped $TiO_2$ were much higher than that of neat $TiO_2$. The photocatalytic stability of N, Mo co-doped $TiO_2$ was much better than that of N doped $TiO_2$.

• 한국재료학회지
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• 제11권2호
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• pp.71-75
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• 2001

The reaction stability of nickel with side-wall materials of SiO$_2$ and Si$_3$N$_4$ on p-type 4"(100) Si substrate were investigated. Ni on 1300 $\AA$ thick SiO$_2$ and 500 $\AA$ - thick Si$_3$N$_4$ were deposited. Then the samples were annealed at 400, 500, 750 and 100$0^{\circ}C$ for 30min, and the residual Ni layer was removed by a wet process. The interface reaction stability was probed by AES depth Profiling. No reaction was observed at the Ni/SiO$_2$ and Ni/Si$_3$N$_4$, interfaces at 400 and 50$0^{\circ}C$. At 75$0^{\circ}C$, no reaction occurred at Ni/SiO$_2$ interface, while $NiO_x$ and Si$_3$N$_4$ interdiffused at Ni/Si$_3$N$_4$ interface. At 100$0^{\circ}C$, Ni layers on SiO$_2$ and Si$_3$N$_4$ oxidized into $NiO_x$ and then $NiO_x$ interacted with side-wall materials. Once $NiO_x$ was formed, it was not removed in wet etching process and easily diffused into sidewall materials, which could lead to bridge effect of gate-source/drain.

• 청정기술
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• 제17권2호
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• pp.142-149
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• 2011

혼합금속산화물인 AlCoPd (1/1/0.05) 및 AlCoFe (1/1/2) 촉매의 Lean $NO_x$ Trap (LNT) 적용을 위하여 NO 및 $N_2O$에 대한 흡착 및 탈착 특성을 살펴보았다. 이들은 NO 및 $N_2O$에 대해 산화 과정 없이도 NO를 잘 흡착하는 성능을 나타냈다. 산소가 공존하는 복합 성분의 흡착에서는 흡착량이 많이 떨어졌지만 NO의 경우 산소대비 높은 선택성과 흡착능을 유지한 반면 $N_2O$의 선택성과 흡착능은 급격히 떨어지는 양상을 나타냈다. 또한 TPD로 살펴본 탈착 특성에서는 고온 영역에서 NO 및 $N_2O$성분이 분해되며 생성된 산소 성분 등이 높은 온도에서도 촉매에 강하게 결합되어 있는 것으로 파악되었다.

• 한국세라믹학회지
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• 제39권3호
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• pp.272-277
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• 2002

전구체로 ($NH_4)[Al(ethylenediaminetetraacetate)]{\cdot}2H_2O$ 착물을 이용한 수정된 열탄소환원질화법으로 질화알루미늄(AlN) 분말과 휘스커를 합성하였다. 이 분말은 질소분위기에서 별도의 환원용 탄소를 혼합하지 않고 1200$^{\circ}$C에서 1500$^{\circ}$C까지의 온도에서 하소시킨 다름 잔류탄소를 태워 버림으로써 얻어졌다. 이 질화과정을 Al-27 마법각 스핀 핵자기공명, 적외선 분광법 및 X-선 회절법으로 연구했다. 전구체 착물은 열분해되어 ${\rho}$-알루미나와 ${\gamma}$-알루미나로 되었다가 ${\gamma}-{\alpha}$알루미나 전이없이 AlN으로 바뀌었다. ${\gamma}$-알루미나가 AlN으로 바뀌면서 분말의 형상이 유지되는 것으로 보아 이 변환과정에서의 중간체는 알루미늄이나 aluminum suboxides와 같은 기체상이 아니고, 고체상의 $AlO_xN_y$임을 알 수 있다. (0001) 사파이어를 이용하면 AlN 휘스커를 합성할 수 있다.

• 센서학회지
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• 제6권3호
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• pp.200-206
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• 1997

열산화시킨 실리콘 웨이퍼 위에 저압화학기상성장법으로 $SiCl_{2}H_{2}$, $NH_{3}$ 및 $N_{2}O$ 기체를 사용하여 실리콘 옥시나이트라이드($Si_{x}O_{y}N_{z}$) 층을 제작하였다. 세 가지의 다른 조성이 기체 유속비($NH_{3}/N_{2}O$)를 각기 0.2, 0.5 및 2로 변화시키고 $SiCl_{2}H_{2}$의 기체 유속은 고정시킴으로써 얻어졌다. 엘립소메트리와 HFCV(High Frequency Capacitance-Voltage) 측정법을 채택하여 굴절율, 유전율 및 조성의 차이를 각각 조사했다. 실리콘 옥시나이트라이드는 내부에 포함된 실리콘 나이트라이드 성분량에 관계없이 용액 중에서 순수한 실리콘 나이트라이드와 유사한 안정성을 보유했다. 실리콘 옥시나이트라이드 층 알칼리이온 감지성의 크기 순서는 실리콘 나이트라이드 성분량에 영향을 받았다. 보다 나은 알칼리이온 감지성이 실리콘 옥시나이트라이드의 벌크 내에 있는 실리콘 디옥시드의 성분량을 증가시킴으로써 얻어졌다.

• 대한수학회보
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• 제49권6호
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• pp.1311-1326
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• 2012

We are concerned with the multiplicity of semiclassical solutions of the following Schr$\ddot{o}$dinger system involving critical nonlinearity and magnetic fields $$\{-({\varepsilon}{\nabla}+iA(x))^2u+V(x)u=H_u(u,v)+K(x)|u|^{2*-2}u,\;x{\in}\mathbb{R}^N,\\-({\varepsilon}{\nabla}+iB(x))^2v+V(x)v=H_v(u,v)+K(x)|v|^{2*-2}v,\;x{\in}\mathbb{R}^N,$$ where $2^*=2N/(N-2)$ is the Sobolev critical exponent and $i$ is the imaginary unit. Under proper conditions, we prove the existence and multiplicity of the nontrivial solutions to the perturbed system.

• 한국세라믹학회지
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• 제37권1호
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• pp.50-56
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• 2000

Precursor gels with the composition of xZrO2·(100-x)SiO2 systems (x=10, 20 and 30 mol%) were prepared by the sol-gel method. Kinetic parameters, such as activation energy, Avrami's exponent, n, and dimensionality crystal growth value, m, have been simultaneously calculated from the DTA data using Kissinger and Matusita equations. The crystallite size dependence of tetragonal to monoclinic transformation of ZrO2 was investigated using XRD, in relation to the fracture toughness. The crystallization of tetragonal ZrO2 occurred through 3-dimensional diffusiion controlled growth(n=m=2) and the activation energy for crystallization was calculated using Kissinger and Matusita equations, as about 310∼325±10kJ/mol. The growth of t-ZrO2, in proportion to the cube of radius, increased with increasing heating temperature and hteat-treatment time. It was suggested that the diffusion of Zr4+ ions by Ostwald ripening was rate-limiting process for thegrowth of t-ZrO2 crystallite size. The fracture toughness of xZrO2·(100-x)SiO2 systems glass ceramics increased with increasing crystallite size of t-ZrO2. The fracture toughness of 30ZrO2·70SiO2 system glass ceramics heated at 1,100℃ for 5h was 4.84 MPam1/2 at a critical crystaliite size of 40 nm.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1996년도 재료학회 추계학술발표회
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• pp.170-170
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• 1996

• 한국결정학회지
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• 제6권1호
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• pp.27-35
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• 1995

1-tert-butoxycarbonyl-4-[N-(tert-butoxycarbonyl)-N-(ethoxycarbonylmethyl)amino]-3-phenylsulfonylpyrrolidind [C24H36O8N2S;이하 BEP]의 분자 및 결정구조를 X-선 회절법으로 연구하였다. 이 결정의 분자는 C24H36O8N2S, 삼사정계이고 공간군은 P1이다. 단위세포 길이는 a=11.363(8)Å, b=11.589(6)Å, c=11.013(10)Å,α=95.32(6)°,β=98.64(7)°,γ=79.57(5)°,V=1406.8(18)Å3, t=293K, Z=2이다. 구조해석에 사용한 X-선은 CuKα선(λ=1.5418Å)을 사용하였다. 분자구조는 직접법으로 풀었으며 최소자승법으로 정밀화하였다. 최종 신뢰도 R값은 F≥4 σ(F)인 3621개의 회절반점에 대하여 R=9.78% 이었다.

• 한국세라믹학회지
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• 제28권2호
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• pp.130-140
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• 1991

The powders of the system Si3N4-Y2O3-AlN were prepared using Si(OC2H5)4 and YCl3.6H2O together with commercial AlN powder. $\alpha$-Si3N4 was prepared by the carbothermal reduction and nitridation of the hydrolyzed gel at 135$0^{\circ}C$ for 10h in N2 atmosphere. YCl3.6H2O was observed to be changed to Y2O3 during the reaction. $\alpha$-Sialon(X=0.2, 0.4, 0.6) ceramics were obtained by hot-pressing the Si3N4-Y2O3-AlN mixture at 178$0^{\circ}C$ for 1h under 30 MPa. The content of $\alpha$-Sialon increased with increasing metal solubility(x value) and $\alpha$-Sialon single phase was obtained at the metal solubility of 0.6. With increasing metal solubility, flexural strength, fracture toughness and thermal shock resistence were decreased, while the microhardness was increased. Large elongated $\beta$-Si3N4 grains were mainly observed at lower metal solubility. Mechanical prorerties of the sintered ceramics with X=0.2 were measured as follows : flexural strength ; 650 MPa, fracture toughness ; 3.63 MN/m3/2, hardness ; 14.7 GPa, thermal shock resistence temperature ; 58$0^{\circ}C$.