• Journal of the Korean Chemical Society
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• v.54 no.1
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• pp.120-124
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• 2010

$TiO_2$ and N-substituted $TiO_{2-x}N_x$ were synthesized by using precipitation method. $TiO_{2-x}N_x$ compound absorbed whole UV light as well as long wavelength of visible light (400 - 700 nm) because of the change of band gap from 3.2 eV to 1.77 eV. Results obtained revealed that $TiO_{2-x}N_x$ showed higher activity than pure $TiO_2$ or P-25 for visible-photocatalytic degradation of 1,4-dichlorobenzene.

• Journal of the Korean Magnetics Society
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• v.10 no.3
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• pp.106-111
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• 2000

The magnetic thin films can be prepared without vacuum process and under the low temperature (<100 $^{\circ}C$) by ferrite plating. We have performed ferrite plating of M $n_{x}$Z $n_{0.22}$F $e_{2.78-x}$ $O_4$(x=0.00~0.08) films and N $i_{x}$Z $n_{0.22}$F $e_{*}$2.78-x/ $O_4$(x=0.00~0.15) films on cover glass at the substrate temperature 90 $^{\circ}C$. The crystal structure of the samples has been identified as a single phase of polycrystal spinel structure by x-ray diffraction technique. The lattice constant in the M $n_{x}$Z $n_{0.22}$F $e_{2.78-x}$ $O_4$films increases but in the N $i_{x}$Z $n_{0.22}$F $e_{*}$2.78-x/ $O_4$films decrease with the composition parameter, x. The saturation magnetization in the M $n_{x}$Z $n_{0.22}$F $e_{2.78-x}$ $O_4$films does not greatly change, in agreement with observations on bulk samples.k samples.k samples.

• Journal of Environmental Science International
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• v.12 no.9
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• pp.997-1004
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• 2003

The objective of this research was to test whether, under controlled laboratory conditions, hybrid SNCR/SCR process improves N $O_{x}$ removal efficiency in comparison with the SNCR only. The hybrid process is a combination of a redesigned existing SNCR with a new downstream SCR. N $O_{x}$ reduction experiments using a hybrid SNCR/SCR process have been conducted in simple NO/N $H_3$/ $O_2$ gas mixtures. Total gas flow rate was kept constant 4 liter/min throughout the SNCR and SCR reactors, where initial N $O_{x}$ concentration was 500 ppm in the presence of 5% or 15% $O_2$. Commercial catalysts, $V_2$ $O_{5}$ -W $O_3$-S $O_4$/Ti $O_2$, were used for SCR N $O_{x}$ reduction. The residence time and space velocity were around 1.67 seconds and 2,400 $h^{-1}$ or 6000 $h^{-1}$ in SNCR and SCR reactors, respectively. N $O_{x}$ reduction of the hybrid system was always higher than could be achieved by SNCR alone at a given value of N $H_{3SLIP}$. Optimization of the hybrid system performance requires maximizing N $O_{x}$ removal in the SNCR process. An analysis based on the hybrid system performance in this lab-scale work indicates that a equipment with N $O_{xi}$ =500 ppm will achieve a total N $O_{x}$ removal of about 90 percent with N $H_{3SLIP}$ $\leq$ 5 ppm only if the SNCR N $O_{x}$ reduction is at least 60 percent. A hybrid SNCR/SCR process has shown about 26∼37% more N $O_{x}$ reduction than a SNCR unit process in which a lower temperature of 85$0^{\circ}C$ turned out to be more effective.be more effective.

• Korean Journal of Materials Research
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• v.11 no.3
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• pp.197-202
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• 2001

M $g_{1-x}$ Z $n_{x}$O thin films with various composition x of ZnO were fabricated by a RF magnetron sputtering method, which is expected to improve the electro-optical properties of the conventional MgO protective layer for AC-PDP. Test panels with the $Mg_{1-x}$Z $n_{x}$O protective layer have been fabricated in order to investigate the effects of ZnO doping on the electrical characteristics of devices such as the discharge voltages and the memory gain. Experimental results revealed that test panels with the $Mg_{1-x}$Z $n_{x}$O(x=0.5at%) protective layer show lower firing and sustain voltages than those seen in panels with MgO protective layer by 20V. resulting in an increasement of the memory coefficient. In addition, it was found that test panels with the $Mg_{1-x}$Z $n_{x}$O protective layer show higher discharge intensity, i. e., higher plasma density, compared with panels with MgO protective layer.ve layer.layer.

• Communications of the Korean Mathematical Society
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• v.18 no.4
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• pp.603-613
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• 2003

When X is a threefold of general type, it is well known h/sup 0/(X, O/sub X/(nK/sub X/)) ≥ 1 for a sufficiently large n. When X(O/sub X/) 〉 0, it is not easy to obtain such an integer n. A. R. Fletcher showed that h/sup 0/(X, O/sub X/(nK/sub X/)) ≥ 1 for n = 12 when X(O/sub X/)=1. We introduce a technique different from A. R. Fletcher's. Using this technique, we also prove the same result as he showed and have a new result.

• Journal of the Korean Vacuum Society
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• v.19 no.5
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• pp.341-346
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• 2010

In this paper, anti-reflection coating was investigated for decreasing the reflection in visible range of 400~650 [nm] through four staked layers of $Si_xO_y$ and $Si_xN_y$ thin films prepared by reactive sputtering method. Si single crystal of 6 [inch] diameter was used as a sputtering target. Ar and $O_2$ gases were used as sputtering gases for reactive sputtering for the $Si_xO_y$ thin film, and Ar and $N_2$ gases were used for reactive sputtering for the $Si_xN_y$ thin film. DC pulse power of 1900 [W] was used for the reactive sputtering. Refractive index and deposition rate were 1.50 and 2.3 [nm/sec] for the $Si_xO_y$, and 1.94 and 1.8 [nm/sec] for the $Si_xN_y$ thin film, respectively. Considering the simulation of the four layer anti-reflection coating structure with the above mentioned films, the $Si_xO_y-Si_xN_y$ stacked four-layer structure was prepared. The reflection measurement result for that structure showed that a "W" shaped anti-reflection was obtained successfully with a reflection of 1.7 [%] at 550 [nm] region and a reflection of 1 [%] at 400~650 [nm] range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.444-447
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• 2000

The spinel L $i_{1-x}$ M $n_2$ $O_4$has been synthesized by the solid-state reaction. L $i_{l-x}$M $n_2$ $O_4$which includes a mixture of LiOH . $H_2O$ and Mn $O_2$prepared by preliminary heating at 35$0^{\circ}C$ for 12hr. L $i_{l-x}$M $n_2$ $O_4$fired at temperature range from 75$0^{\circ}C$ for 48hr. The structure and the electrochemical characteristics of spinel to L $i_{1-x}$ M $n_2$ $O_4$which is fabricated by changing sintering condition from starting materials are investigated. The cyclic voltammetric measurement was performed using 3 electrode cells. Electrode specific capacity and cycle life behavior were tested in a 3.0~4.2V range at a constant current density of 0.45mA/c $m^2$. To improve the cycle performance of spinel L $i_{l-x}$M $n_2$ $O_4$as the cathode of 4V class lithium secondary batteries, spinel phases L $i_{1-x}$ M $n_2$ $O_4$were Prepared at various lithium. The results showed that discharge capacity of L $i_{l-x}$M $n_2$ $O_4$varied at lithium quantity decrease with increasing lithium add quantity. The discharge capacities of L $i_{0.925}$M $n_2$ $O_4$and LiM $n_2$ $O_4$revealed 108 and 117mAh/g, respectively.spectively.y.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.726-729
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• 2000

Though L $a_{1+x}$S $r_{2-x}$M $n_2$ $O_{7}$ n=2 R-P phases have been well known to have CMR effect, it was generally believed that n=1 phase was insulating. But recently monolayered perovskite $Ca_{2-x}$L $n_{x}$Mn $O_4$phase has been reported to show magnetoresistance. In this study, layered perovskite $Ca_{2-x}$L $n_{x}$Mn $O_4$ (x=0, 0.5, Ln=Pr, Nd, Sm, Gd) phases were synthesized by solid state reaction and their structures were refined by Rietveld method. The space groups of $Ca_2$Mn $O_4$, N $d_{0.5}$C $a_{1.5}$Mn $O_4$phases were refined as C2cb and Fmmm, respectively.y.ely.y.y.y.y.y.y.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.436-437
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• 2006

The $Ag/TiO_{2-x}N_x$ nanoparticles were synthesized by photochemical deposition in a $TiO_{2-X}N_X$ suspension system. The prepared products were characterized by means of XRD, Uv-vis and photoluminescence spectra (PL). Its photocatalytic activity was investigated by the decomposition of methylene blue (MB) solution under illumination of visible and ultraviolet light, respectively. Compared to $TiO_{2-x}N_x$, the photocatalytic activity of the as-prepared $Ag/TiO_{2-x}N_x$ is obviously enhanced due to the decreasing recombination of a photoexcitated electron-hole pairs. The Mechanism in which photocatalytic activity is enhanced has been discussed in detail.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.12
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• pp.1028-1032
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• 2009

In this study, the influences of silicon-based gas barrier films fabricated by using a facing target sputtering(FTS) system on the gas permeability for flexible displays have been investigated. Under these optimum conditions on the $SiO_x$ film with oxygen concentration($O_2/Ar+O_2$) of 3.3% and the $SiO_xN_y$ film with nitrogen concentration($N_2/Ar+O_2+N_2$) of 30% deposited by the FTS system, it was found that the films were grown about 4 times higher deposition rate than that of the conventional sputtering system and showed high transmittance about 85% in the visible light range. Particularly, the polyethylene naphthalate(PEN) substrates with the $SiO_x$ and/or $SiO_xN_y$ films showed the enhanced properties of decreased water vapor transmission rate (WVTR) over $10^{-1}\;g/m^2{\cdot}day$ compared with the PEN substrate without any gas barrier films, which was due to high packing density in the Si-based films with high plasma density by FTS process and/or the denser chemical structure of Si-N bond in the $SiO_xN_y$ film.