• Title/Summary/Keyword: Multilayered films

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The Dielectric Properties of the PZT Multilayered Thin Films for FRAM (FRAM 응용을 위한 PZT 다층 박막의 유전 특성)

  • Nam, Sugn-Pill;Lee, Sang-Chul;Lee, Sang-Heon;Bea, Seon-Gi;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 2004.07c
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    • pp.1618-1620
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    • 2004
  • The $Pb(Zr_{0.4}Ti_{0.6})O_3/Pb(Zr_{0.6}Ti_{0.4})O_3$ [PZT(4060)/(6040)] multilayered thin films were deposited by RF Sputtering method on the Pt/Ti/$SiO_2$/Si substrate. This procedure was repeated several times to form PZT(4060)/(6040) heterolayerd thin films. The effects on the structural and dielectric properties of PZT multilayered thin films were investigated. The MFM(Metal Ferroelectric Metal) type capacitors were made using the PZT(4060)/(6040) multilayered thin films deposited with optimum deposition condition. An enhanced dielectric property was observed in the PZT(4060)/(6040) multilayered thin films. The relative dielectric constant and dielectric loss at 100Hz of the PZT(4060)/(6040)-5 multilayered thin films were about 1106 and 0.016, respectively.

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Electrical Properties of the multilayered PZT(4060)/(6040) Thin Films (PZT(4060)/(6040) 다층 박막의 전기적 특성)

  • Nam, Sung-Pill;Lee, Sung-Gap;Bea, Seon-Gi;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 2007.07a
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    • pp.1301-1302
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    • 2007
  • The multilayered $Pb_{1.1}(Zr_{0.4}Ti_{0.6})O_{3}$/$Pb_{1.1}(Zr_{0.6}Ti_{0.4})O_{3}/Pb_{1.1}(Zr_{0.4}Ti_{0.6})O_{3}$[PZT(4060)/(6040)/(4060)] thin films were deposited by RF sputtering method on the Pt/TiO2/SiO2/Si substrate. We investigated the effects of deposition conditions on the structural and electrical properties of the multilayered PZT thin films. All the multilayered PZT thin films showed dense and homogeneous structure without the presence of the rosette structure. The dielectric properties such as dielectric constant, loss, remanent polarization of the multilayered PZT thin film were superior to those of single composition PZT(4060) and PZT(6040) films, and those values for the multilayered PZT(10/20/10) thin film were 903, 1.01% and $25.60{\mu}C/cm^2$. This study suggests that the design of the multilayered PZT thin films capacitor with tetragonal and rhombohedral phase should be an effective method to enhance the dielectric and ferroelectric performance in devices.

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Highly sensitive CO sensing properties of multilayered $TiO_2$ thin films by colloidal templating

  • Moon, Hi-Gyu;Shim, Young-Seok;Jang, Ho-Won;Kim, Jin-Sang;Park, Hyung-Ho;Yoon, Seok-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.17-17
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    • 2010
  • We investigate CO gas sensing properties of multilayered TiO2 thin film gas sensors fabricated by colloidal templating of 300 nm of polymer spheres. Compared with plain films, the multilayered films show enhanced gas sensing with higher sensitivity and faster response. Also, colloidal templating by using smaller spheres (300 nm in diameter) leads to close-packed multilayered TiO2 thin films with very large-scale. This result suggest that understanding and control of the structures on the sensing properties of multilayered TiO2 thin films by colloidal templating is important in developing the films for real applications.

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The Dielectric Properties of $BaTiO_3/SrTiO_3$ Multilayered Thick Films with Laminating times (적층횟수에 따른 $BaTiO_3/SrTiO_3$ 다층후막의 유전특성)

  • Han, Sang-Wook;Kim, Ji-Heon;Lee, Sang-Heon;Bae, Seon-Gi;Lee, Young-Hie
    • Proceedings of the KIEE Conference
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    • 2004.11a
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    • pp.180-182
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    • 2004
  • Polycrystalline $BaTiO_3/SrTiO_3$ powder was prepared by sol-gel process and the multilayered thick films were prepared on the $Al_2O_3$ substrates by screen printing method. The films were sintered at $1400^{\circ}C$ for 2 hours in the air. The structural and dielectric properties were investigated, The X-ray diffraction (XRD) patterns indicate that the BST phase and porocity were formed in the interface of $BaTiO_3/SrTiO_3$ multilayered thick films. The dielectric constant and the dielectric loss of the BT/ST/BT/ST multilayered thick films were about 247 and 0.84% at 1MHz.

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Possibility of Magnetocapacitor for Multilayered Thin Films

  • Hong, Jong-Soo;Yoon, Sung-Wook;Kim, Chul-Sung;Shim, In-Bo
    • Journal of Magnetics
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    • v.17 no.2
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    • pp.78-82
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    • 2012
  • CoNiFe(CNF)/$BaTiO_3(BTO)$/CoNiFe(CNF) multilayered thin films were deposited on Pt/Ti/$SiO_2$/Si substrates by using pulsed laser deposition (PLD) system. We fabricated three different thin films of BTO, BTO/CNF and CNF/BTO/CNF for magneto-capacitor and studied their crystalline structure, surface and interface morphology, and magnetic and electrical properties. When three different structures of multilayered thin film were compared, magnetization of CNF/BTO/CNF thin films was decreased by magnetic and dielectric interaction. Also we confirmed that capacitance of CNF/BTO/CNF multilayered thin film was enhanced as being near tetragonal structure with increasing of c/a ratio because of atomic bonding at interface between BTO dielectric and CNF magnetic materials. Finally, we studied the change of the capacitance of CNF/BTO/CNF multilayered thin film with magnetic field for emergence of magnetocapacitance and suggested a possibility of enhanced capacitance.

Dielectric Properties of PZT(4060/6040) Multilayered Thin Films with Substrate Temperature (기판온도에 따른 PZT(4060)/(6040) 다층 박막의 유전 특성)

  • Han, Sang-Wook;Lee, Sang-Hyun;Lee, Sung-Gab;Bae, Seon-Gi;Lee, Young-Hie
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.667-670
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    • 2004
  • The dielectric properties of PZT(4060)/(6040) multilayered thin films with substrate temperature were investigated. PZT(4060)/(6040) thin films were deposited by RF sputtering method on Pt/Ti/$SiO_2$/Si substrates with different substrate temperature of $200{\sim}700^{\circ}C$. Increasing the substrate temperature, perovskite structure was increased, and PZT (001), (110), (002), (200) peaks were increased. The relative dielectric constant and dielectric loss of PZT(4060)/(6040) multilayered thin films at the substrate temperature of $700^{\circ}C$ were 843 and 2.45, respectively at 1000(Hz).

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Electrochemical Characterization of Multilayered CdTe/PSS Films Prepared by Electrostatic Self-assembly Method

  • Rabbani, Mohammad Mahbub;Yeum, Jeong Hyun;Kim, Jungsoo;Nam, Dae-Geun;Oh, Weontae
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.5
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    • pp.257-261
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    • 2014
  • Multilayered CdTe/PSS films were prepared by the electrostatic self-assembly method in an aqueous medium. Positively-charged cadmium telluride (CdTe) nanoparticles and anionic polyelectrolyte, poly (sodium 4-styrene sulfonate) (PSS) were assembled alternately in order to build up a multilayered film structure. A linear proportion of absorbance to the number of bilayers suggests that an equal amount of CdTe was adsorbed after each dipping cycle, which resulted in the buildup of a homogenous film. The binding energies of elements (Cd and Te) in multilayered CdTe/PSS film shifted from those of the CdTe nanoparticles in the pure state. This result indicates that the interfacial electron densities were redistributed by the strong electrostatic interaction between the oppositely-charged CdTe and PSS. Electrochemical properties of the multilayered CdTe/PSS films were studied in detail by cyclic voltammetry (CV).

A study on the synthesis and mechanical properties of WC/C multilayered films (WC/C 다층박막의 합성 및 기계적 특성에 관한 연구)

  • 명현식;한전건
    • Journal of Surface Science and Engineering
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    • v.35 no.3
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    • pp.121-126
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    • 2002
  • WC/C multilayered films were deposited by arc ion plating and magnetron sputter hybrid system with various $C_2$H$_2$ flow rates and bias voltages. The coatings have been characterized with respect to their chemical composition (Glow Discharge Optical Emission Spectroscopy), hardness(Knoop micro-hardness), residual stress(Laser beam bending) and friction coefficient(Ball on disc type wear test). Deposition rate, microhardness and residual stress of WC/C films were observed to increase with increasing the $C_2$$H_2$ flow rates. The highest hardness and residual stress were measured to be 26.5 GPa and 1.1GPa for, WC/C film deposited at substrate bias of -100V. WC/C multilayered film was obtained very low friction coefficient(~0.1).

Time-Dependent Dielectric Breakdown of a Polycrystalline and a Multilayered $BaTiO_3$ Thin Films (다결정 및 다층구조 $BaTiO_3$ 박막의 Time-Dependent Dielectric Breakdown 특성)

  • Oh, Jeong-Hoon;Song, Man-Ho;Lee, Yun-Hi;Park, Chang-Yub;Oh, Myung-Hwan
    • Proceedings of the KIEE Conference
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    • 1996.07c
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    • pp.1526-1528
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    • 1996
  • The dielectric reliability of a polycrystalline and a multilayered $BaTiO_3$ thin films was evaluated using a time-zero dielectric breakdown (TZDB) and a time-dependent dielectric breakdown (TDDB) techniques. The $BaTiO_3$ thin films were prepared by rf-magnetron sputtering technique on ITO-coated glass substrates. In case of the multilayered $BaTiO_3$ thin film, the dielectric breakdown histogram, which was obtained from the TZDB measurements, showed a typical Weibull distribution. While in case of polycrystalIine $BaTiO_3$ thin film, a randomly distributed dielectric breakdown histogram was observed. The TDDB results of the multilayered $BaTiO_3$ thin film guaranteed about $10^5$ hours-operation under the stress field of 1 MV/cm.

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Electrical Properties of PZT/BT Mulitilayered Films (PZT/BT 박막의 전기적 특성)

  • Lee, Sang-Heon;Nam, Sung-Pil;Lee, Young-Hie;Park, Jae-Jun
    • Proceedings of the KIEE Conference
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    • 2005.11a
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    • pp.189-190
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    • 2005
  • Ploycrystalline $Pb(Zr_{0.5},Ti_{0.5))O_3$ and $BaTiO_3$ powder were prepared by sol-gel process. The alumina substrate were sintered at $1400^{\circ}C$ with bottom electrode of Pt for 2 hours. The Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films with laminating times were fabricated on alumina substrate by screening printing method. The obtained thick films were sintered at $800^{\circ}C$ with upper electrode of Ag paste for 1 hour. Structural properties of Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films were investigated. As a result of the Differential Thermal Analysis(DTA) of Pb(Zr0.5,Ti0.5)O3, exothermic peak was observed at around 650 $^{\circ}C$. The X-ray diffraction (XRD) patterns indicated that BaTiO3 and Pb(Zr0.5,Ti0.5)O3 phases and porosities were formed in the interface of Pb(Zr0.5,Ti0.5)O3 / BaTiO3multilayered thick films.

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