• 한국전기전자재료학회논문지
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• 제16권12S호
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• pp.1195-1199
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• 2003

In this study, in order to develop the low temperature sintering ceramics for multilayer piezoelectric transformer, dielectric and piezoelectric properties of PSN-PZT[0.91Pb(Sb$\sub$1/2/Nb$\sub$1/2/)$\sub$0.03/(Zr$\sub$0.495/Ti$\sub$0.505/)$\sub$0.97/O$_3$-0.04Pb(Ni$\sub$1/2/W$\sub$1/2/)O$_3$+0.05BiFeO$_3$+0.3wt％MnO$_2$+0.6wt％CuO〕 ceramics were investigated according to Zr/Ti ratio. As Zr/Ti ratio is increased, electromechanical coupling factor(k$\sub$p/) and dielectric constant increased and then decreased after the ratio of Zr/Ti=50/50. Also, mechanical qualify factor(Q$\sub$m/) decreased and then increased after the ratio of Zr/Ti=50/50.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.326-329
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• 2002

In this study, to develop the low temperature sintering ceramics for multilayer piezoelectric transformer, $0.02Pb(Sb_{1/2}Nb_{1/2})O_{3}-0.13Pb(Ni_{1/3}Nb_{2/3}O_3-0.85Pb(Zr,Ti)O_{3}$ system ceramics were manufactured with the variations of sintering temperature between 1,090 and $1240^{\circ}C$ and its dielectric and piezoelectric characteristics were investigated. With increasing the sintering temperature, electromechanical coupling factor (kp) and mechanical quality factor(Qm) were decreased. At $1,180^{\circ}C$ sintered specimen showed maximum value of 0.535 electromechanical coupling factor (kp). On the other hand,. The specimen sintered at $1,180^{\circ}C$ showed the maximum value of ${\varepsilon}r$=1,571, Qm=1,181 respectively.

• Transactions on Electrical and Electronic Materials
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• 제9권3호
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• pp.91-95
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• 2008

In this study, in order to develop the composition ceramics for low loss multilayer piezoelectric actuator application, $Pb(Zn_{1/2}W_{1/2})O_3-Pb(Mn_{1/3}Nb_{2/3})O_3-Pb(Zr,Ti)O_3$ (abbreviated as PZW-PMN-PZT)ceramics according to the amount of $MnO_2$ addition were fabricated using two-stage calcinations method. And also, their dielectric and piezoelectric properties were investigated. At the 0.2 wt% $MnO_2$ added PZW-PMN-PZT ceramics sintered at $930^{\circ}C$, density, electromechanical coupling factor $k_p$, dielectric constant ${\varepsilon}_r$, piezoelectric $d_{33}$ constant and mechanical quality factor $Q_m$ showed the optimum value of $7.84g/cm^3$, 0.543, 1,392, 318.7 pC/N, 1,536, respectively for low loss multilayer ceramics actuator application.

• 센서학회지
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• 제24권1호
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• pp.15-21
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• 2015

Transparent and conductive multilayer thin films consisting of three alternating layers FZTO/Ag/$WO_3$ have been fabricated by radio-frequency (RF) sputtering for the applications as transparent conducting oxides and the structural and optical properties of the resulting films were carefully studied. The single layer fluorine doped zinc tin oxide (FZTO) and tungsten oxide ($WO_3$) films grown at room temperature are found to have an amorphous structure. Multilayer structured electrode with a few nm Ag layer embedded in FZTO/Ag/$WO_3$ (FAW) was fabricated and showed the optical transmittance of 87.60 % in the visible range (${\lambda}=380{\sim}770nm$), quite low electrical resistivity of ${\sim}10^{-5}{\Omega}cm$ and the corresponding figure of merit ($T^{10}/R_s$) is equivalent to $3.0{\times}10^{-2}{\Omega}^{-1}$. The resultant power conversion efficiency of 2.50% of the multilayer based OPV is lower than that of the reference commercial ITO. Asymmetric D/M/D multilayer is a promising transparent conducting electrode material due to its low resistivity, high transmittance, low temperature deposition and low cost components.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.14-17
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• 1995

In this study, fur the use of portable communication multilayer devices. 0.15wt% V$_2$O$\_$5/ added BiNbO$_4$which is low-fire microwave dielectric ceramic as able to co-fire with high conductors was made into specimens with the additions of Cr$_2$O$_3$0.04, 0.2, 0.4, 0.8, 1.2wt%. These specimens were sintered at 930, 960. 990, 1030$^{\circ}C$ respectively to make the microwave dielectric resonators. These resonators were investigated by measuring the structure and dielectric properties. The density of the specimens was increased by the amounts of the Cr$_2$O$_3$and increased by increasing the temperature. 0.8wt% Cr$_2$O$_3$added and sintered at 960$^{\circ}C$ specimen skewed 49 dielectric constant. Q$.$f values were increased by the amounts of Cr$_2$O$_3$. And Q value was deteriorated by the additions of Cr$_2$O$_3$at sufficiently sintered temperatures. Negative resonant temperature coefficients were moved to positive by the amounts of Cr$_2$O$_3$and returned negative again at 1.2wt%. Temperature characteristics were deteriorated at 1030$^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.662-665
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• 2002

The microwave dielectric properties and the microstructures of $Tm_2O_3$-modified $BiNbO_4$ ceramics were investigated. $Bi_{(1-x)}Tm_xNbO_4$ ceramics combined with orthorhombic and triclinic phases were identified at sintering temperatures of $920{\sim}960^{\circ}C$. The apparent density decreased slightly with the increasing Tm content. Regardless of the Tm content the dielectric constant $(\varepsilon_r)$ of all compositions except x=0.1 in $Bi_{(1-x)}Tm_xNbO_4$ ceramics saturated at the range of 42~44. The $Q{\times}f_0$ values of 6,000-12,000(GHz) were obtained for all compositions when the sintering temperatures were in the range of $920{\sim}960^{\circ}C$. The temperature coefficient of the resonant frequency$(\tau_f)$ can be also adjusted with increasing the amount of the doped Tm from a positive value of $+15ppm/^{\circ}C$ to a negative value of $-20ppm/^{\circ}C$. The $Bi_{(1-x)}Tm_xNbO_4$ ceramics can be possibly applied to multilayer microwave devices with low processing temperatures.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.217-218
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• 2006

In this study, In order to develop the low temperature sintering multilayer piezoelectric actuator, PMN-PNN-PZT system ceramics were manufactured with the sintering temperature, and their microstructure and piezoelectric properties were investigated. At the composition ceramics sintered at $900^{\circ}C$, dielectric constant(${\varepsilone}_r$), electromechanical coupling factor($k_p$), piezoelectric constant($d_{33}$) and mechanical quality factor(Qm) showed the optimal value of 1095, 0.60, 363 and 1055, respectively, for multilayer piezoelectric actuator application.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.232-235
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• 2003

In this study, in order to develop the low temperature sintering ceramics for multilayer piezoelectric transformer, dielectric and piezoelectric properties of PSN-PZT ceramics were investigated as a function of CuO addition, At the 0.6wt% CuO added specimen sintered at $920^{\circ}C$, the most excellent mechanical quality factor and electromechanical coupling factor were obtained.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.339-342
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• 1998

A high performance, high-dielectric stripline filter has been developed. The filter consists of planar resonators and its structure is made of high permittivity multilayer ceramic. The performance is distinctive with its attenuation pole. An equivalent lumped circuit is derived to explain the behavior of the attenuation pole quantitatively. A precise design procedure is also described.

• 한국전기전자재료학회논문지
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• 제19권7호
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• pp.667-672
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• 2006

Ferroelectric $Pb(Zr_{0.52}Ti_{0.48})O_3$ (PZT(52/48)) thick films were fabricated by the screen-Printing method on the alumina substrates, and $PbTiO_3$ (PT) Precursor solution, which prepared by sol-gel method, was spin-coated on the PZT(52/48) thick films to obtain a densification. Its structural and electrical properties of the PZT(52/48) thick films with the treatment of PT precursor solution coating were investigated. The particle size of the thick films was increased with increasing the number of coatings and the thickness of the PZT-6 (6: number of coatings) films was about $60{\mu}m$. The relative dielectric constant increased and the dielectric loss decreased with increasing the number of PT sol coatings. The relative dielectric constant and dielectric loss of the PZT-6 thick film were 475 and 2 %, respectively. The remanent polarization, coercive field and breakdown strength of the PZT-6 film were $32.6{\mu}C/cm^2$, 15 kV/cm and 60 kV/cm, respectively.