• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.254-257
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• 2000

We report spectroscopic ellipsometric (SE) measurements on $Cd_{1-x}Mg_x/Te$ (0$\leq$x$\leq$0.43) films grown on GaAs substrate. When compared with previous bulk data, at first, current spectrum shows clear interference oscillations below $E_0$ band gap energy, which means the transparent characteristic of direct transition material below $E_0$ edge. It proves that the film samples used for this work have the most interrupted surface of high quality reported so far by SE. Secondly the best resolution of $E_2$-peak is observed, so we can report clear splitting of E$_2$and $E_0'$ band gap energies. We also performed the multilayer calculation necessary to remove this interference oscillations to observe $E_0'$ band gap energy of $Cd_{1-x}Mg_x/Te$ (x=0.23) film.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.163-166
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• 2005

Multilayer LTCC technology enables RF modules to be reduced dramatically by taking advantage of the three dimension flexibility. Compared to a conventional two dimensional PCB, LTCC allows higher density, reduced size, and lower cost. In this research, BPF based on LTCC for 900MHz ZigBee application was implemented which can replace SAW filter with using the material of the Dupont9599's dielectric constant 7.8. And distributed baud pass filter for 900MHz ZigBee system applications is presented. Using resonator stripline and capacitance, 2nd order band pass filter was designed. Adjusting resonator's length and capacitance is easy to tune at accurate center frequency by shifting band because ZigBee system is using narrow bandwidth, $902MHz^{\sim}928MHz$. Also resonator has no limitation in space, so reducing size is possibile. Designed filter had I.L. 2.8dB at 915MHz and attenuation at 815MHz, 1015MHz was 16dB, 15dB, respectively. Therefore, the sharpe cut-off and good insertion loss for ZigBee system application.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.9
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• pp.931-935
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• 2003

A multilayer two-stage LC bandpass filter using low-temperature cofired-ceramic(LTCC) is proposed in this paper. The proposed bandpass filter is composed of two ceramic substrates with different dielectric constant instead of single ceramic material from top to bottom layer. Inductive elements are designed in a low permitivity ceramic layer to reduce parasitic effects and loss, while capacitive elements are designed in a high permitivity ceramic layer for size reduction. The proposed filter has 950 MHz center &equency, 118 MHz tractional bandwidth, and 3.5 dB insertion loss. And, the total size of this filter is 2.5${\times}$2.5${\times}$l.4mm$^3$. The performance of filter is analyzed by changing coupling capacitance between each resonator.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.364.2-364.2
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• 2014

Magnesium oxide (MgO) thin films have attracted great scientific and technological interest in recent decades. Because of its distinguished properties such as a wide band gap (7.2 eV), a low dielectric constant (9.8), a low refractive index, an excellent chemical, and thermal stability (melting point=$2900^{\circ}C$), it is widely used as inorganic material in diverse areas such as fire resistant construction materials, optical materials, protective layers in plasma display panels, buffer layers of multilayer electronic/photonic devices, and perovskite ferroelectric thin films. Precursor used in the ALD requires volatility, stability, and low deposition temperature. Precursors using a heteroleptic ligands with different reactivity have advantage of selective reaction of the heteroleptic ligands on substrate during ALD process. In this study, we have synethesized new heteroleptic magnesium precursors ${\beta}$-diketonate and aminoalkoxide which have been widely used for the development of precursor because of the excellent volatility, chelating effects by increasing the coordination number of the metal, and advantages to synthesize a single precursor. A newly-synthesized Mg(II) precursor was adopted for growing MgO thin films using ALD.

• Transactions on Electrical and Electronic Materials
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• v.6 no.1
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• pp.18-21
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• 2005

Monolayers of lipids on a water surface have attracted much interest as models of biological membranes, but also as precursors of multilayer systems promising many technical applications. Until now, many methodologies have been developed in order to gain a better understanding of the relationship between the structure and function of the monolayers. Maxwell displacement current (MDC) measurement has been employed to study the dielectric property of Langmuirfilms. MDC flowing across monolayers is analyzed using a rod-like molecular model. A linear relationship between the monolayer compression speed a and the molecular area Am. Compression speed a was about 30, 40, and 50 mm/min. Langmuir-Blodgett(LB) layers of Arachidic acid deposited by LB method were deposited onto slide glass as Y-type film. The structure of manufactured device is Aul Arachidic acid! AI, the number of accumulated layers are $9{\sim}21$. Also, we then examined of the Metal-Insulator-Metal(MIM) device by means of I-V. The I-V characteristics of the device are measured from -3 to+3 V. The insulation property of a thin film is better as the distance between electrodes is larger.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.46-49
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• 2003

Chemical mechanical polishing (CMP) is an essential dielectric planarization in multilayer microelectronic device fabrication. In the CMP process it is necessary to minimize the extent of surface defect formation while maintaining good planarity and optimal material removal rates. The polishing mechanism of W-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. Thus, it is important to understand the effect of oxidizer on W passivation layer, in order to obtain higher removal rate (RR) and very low non-uniformity (NU%) during W-CMP process. In this paper, we compared the effects of oxidizer or W-CMP process with three different kind of oxidizers with 5% hydrogen peroxide such as $Fe(NO_3)_3$, $H_2O_2$, and $KIO_3$. The difference in removal rate and roughness of W in stable and unstable slurries are believed to caused by modification in the mechanical behavior of $Al_3O_3$ particles in presence of surfactant stabilizing the slurry.

• Korean Journal of Materials Research
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• v.5 no.2
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• pp.151-156
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• 1995

Low temperature firing $(Ba, Sr)TiO_{3}$ dielectrics were successfully prepared with lead based glass and those electrical properties were investigated. Different amount of PbO content glass materials were added to dielectrics to investigate the sinterability and its dielectric properties. Also, various compositions of ceramic capacitors were prepared to applicate in multilayer ceramic capacitors. A large amount of experiment has been done with various Pb contented glasses and different sintering temperatures. The sintering temperature of $(Ba,Sr)TiO_{3}$can be reduced from $1350^{\circ}C$to as low as $1050^{\circ}C$ with 4wt% addition of $PbO-ZnO-B_{2}O_{2}$ glass materials. Its dielectric constant at room temperature was up to 8100 with low dielectric loss, 0.005. This ceramic capacitor showed fully fired microstructures with its grain size of 1-3$\mu \textrm{m}$. The sintered body which was sintered at $1150^{\circ}C$ for 2hr with 4wt% $PbO-ZnO-B_{2}O_{2}$ glass material addition satisfied the Z5U specification of the EIAS.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.5
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• pp.337-343
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• 2020

This study investigated the low temperature sintering with various templates of Bi-based lead-free piezoelectric ceramics. The effects of using CuO-coated Na_0.5Bi_4.5Ti₄O₁₅ templates on the sintering behavior as well as the dielectric, ferroelectric, and piezoelectric properties of Bi_1/2(Na_0.78K_0.22)_1/2TiO₃ (BNKT) ceramics have been examined. In comparison with the specimens sintered with the Na_0.5Bi_4.5Ti₄O₁₅ templates without CuO coating, those sintered with the CuO-coated Na_0.5Bi_4.5Ti₄O₁₅ templates showed larger template sizes as well as a larger electric field induced strain (S_max/E_max) of 422 pm/V after sintering at temperatures as low as 975℃. These results are promising for low-cost multilayer ceramic actuator applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.36-36
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• 2007

본 논문에서는 SoP-L(System on Package-Laminates) 기술을 이용하여 이종의 유전율을 가진 유기물 적층 기반의 수동소자를 이용한 GSM/DCS 대역 분리용 diplexer를 설계, 제작하였고 그 특성을 고찰하였다. SoP-L 기술은 LTCC기술과 같은 타 SoP 기술과 비교해서 이종의 물질을 접합하는데 용이하고 공정비용이 저렴하다. 이러한 장점을 이용하여 캐때시터는 유전율 40의 고유전율 재료를 사이에 두고 구성하였고, 인덕터 부문에는 유전율 4률 적용, 정방혈 스파이럴 구조로 두 개 층으로 구성하여 소형화를 이룰 수 있었다. 제작 시에 구리와 유기물을 적층, patterning 하였고, 수직 via hole 을 형성하고 구리의 무전해, 전해 도금 과정을 거쳐 각 소자를 연결하였다. 이러한 과정을 거쳐 제작된 diplexer의 GSM 저역 통과 필터는 0.52 dB이하의 삽입손실과 20 dB 이상의 반사손실을 가지고 DCS 통과 대역 부근에 notch 가 존재하도록 설계함으로써 DCS 통과 대역에서 17 dB 이상의 저지특성을 나타내었다. DCS 고역 통과 필터는 1.2 dB 이하의 삽입손실과 16 dB 이상의 반사손실을 가지며 GSM 통과 대역 부근에 notch를 가지도록 설계하여 GSM 통과대역에서 32 dB 이상의 저지특성을 나타내었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.1
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• pp.24-31
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• 2022

This study investigated microstructures, crystal structures, polarization, dielectric and electromechanical properties of 0.76Bi_1/2Na_1/2TiO₃-0.24SrTiO₃ (BNT-24ST)-based piezoceramcs by adding Li₂CO₃ and B₂O₃ (LB) as sintering aids for low-temperature sintering. All samples were successfully synthesized using conventional solid-state reaction method and sintered at 950, 1,000, 1,050, 1,100 and 1,175℃ for 2 hours. Without LB, specimens required sintering temperatures over 1,175℃ for sufficient densification, while the addition of 0.10-mol LB decreased the sintering temperatures down to 950℃. The average grain size and dielectric properties of BNT-24ST-10LB ceramics were enhanced with increasing sintering temperature. We found that the low-temperature sintered BNT-24ST piezoceramics by adding LB showed the d₃₃*value of 402 pm/V at 4 kV/mm after sintering at 1,050℃, which was better than that of high-temperature fired specimens sintered at 1,175℃ without LB (242 pm/V). We believe that the results of this study promise a candidate for low-cost multilayer ceramic actuator applications.