• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.8
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• pp.62-71
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• 1994

A novel semiconductor device is proposed to be used as a processing element for the implementation of pulse-mode neural networks which consists of alternating n' GaAs quantum wells and undoped AlGaAs barriers sandwitched between n' GaAs cathode and P' GaAs anode and in simple circuit in conjunction with a parallel capacitive and resistive load the trigger circuit generates neuron-like pulse train output mimicking the function of axon hillock of biological neuron. It showed the sigmoidal relationship between the frequency of the pulse-train and the applied input DC voltage. In conjunction with MQWIMD the various neural circuits are proposed especially a neural chip monolithically integrated with photodetectors in order to perfrom the pattern recognition.

• Proceedings of the Korean Vacuum Society Conference
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• 2004.08a
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• pp.127-127
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• 2004

• Journal of the Optical Society of Korea
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• v.1 no.1
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• pp.44-47
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• 1997

The integration of a GaAs/AlGaAs multi-quantum well electroabsorption modulator and a tapered waveguide vertical direction optical interconnect has been performed without the complicated regrowth process. Zn impurity-induced layer disordering of MQW layer is used to achieve the energy transfer between SQW and MQW regions. Light coupled into a SQW region was transferred to an MQW region and an intensity modulation of 10 dB extinction ratio was demonstrated.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.1
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• pp.25-28
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• 2000

The InAs self-assembled quantun dots (SAQDS) were grown on a GaAs(100) substrate using a molecular beam epitaxy (MBE) technique. The InAs QDs were multi-stacked to have various layer structures of 1, 3, 6, 10, 15 and 20 layers, where the thickness of the GaAs spacer and InAs QD layer were 20 monolayers (MLs) and 2 MLs, respectively. The nanostructured feature was characterized by photoluminescence (PL) and scanning transmission electron microscopy (STEM). It was found that the highest PL intensity was obtained from the specimen with 6 stacking layers and the energy of the PL peak was split with increasing the number of stacking layers. The STEM investigation exhibited that the quantum dots in the 6 stacking layer structure were well aligned in vertical columns without any deflect generation, whereas the volcano-like deflects were formed vertically along the growth direction over 10 periods of InAs stacking layers.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.7-7
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• 2011

Quantum beam technology has been expected to develop breakthroughs for nanotechnology during the third basic plan of science and technology (2006~2010). Recently, Green- or Life Innovations has taken over the national interests in the fourth basic science and technology plan (2011~2015). The NIMS (National Institute for Materials Science) has been conducting the corresponding mid-term research plans, as well as other national projects, such as nano-Green project (Global Research for Environment and Energy based on Nanomaterials science). In this lecture, the research trends in Japan and NIMS are firstly reviewed, and the typical achievements are highlighted over key nanotechnology fields. As one of the key nanotechnologies, the quantum beam research in NIMS focused on synchrotron radiation, neutron beams and ion/atom beams, having complementary attributes. The facilities used are SPring-8, nuclear reactor JRR-3, pulsed neutron source J-PARC and ion-laser-combined beams as well as excited atomic beams. Materials studied are typically fuel cell materials, superconducting/magnetic/multi-ferroic materials, quasicrystals, thermoelectric materials, precipitation-hardened steels, nanoparticle-dispersed materials. Here, we introduce a few topics of neutron scattering and ion beam nanofabrication. For neutron powder diffraction, the NIMS has developed multi-purpose pattern fitting software, post RIETAN2000. An ionic conductor, doped Pr2NiO4, which is a candidate for fuel-cell material, was analyzed by neutron powder diffraction with the software developed. The nuclear-density distribution derived revealed the two-dimensional network of the diffusion paths of oxygen ions at high temperatures. Using the high sensitivity of neutron beams for light elements, hydrogen states in a precipitation-strengthened steel were successfully evaluated. The small-angle neutron scattering (SANS) demonstrated the sensitive detection of hydrogen atoms trapped at the interfaces of nano-sized NbC. This result provides evidence for hydrogen embrittlement due to trapped hydrogen at precipitates. The ion beam technology can give novel functionality on a nano-scale and is targeting applications in plasmonics, ultra-fast optical communications, high-density recording and bio-patterning. The technologies developed are an ion-and-laser combined irradiation method for spatial control of nanoparticles, and a nano-masked ion irradiation method for patterning. Furthermore, we succeeded in implanting a wide-area nanopattern using nano-masks of anodic porous alumina. The patterning of ion implantation will be further applied for controlling protein adhesivity of biopolymers. It has thus been demonstrated that the quantum beam-based nanotechnology will lead the innovations both for nano-characterization and nano-fabrication.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.7
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• pp.50-55
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• 1999

We have fabricated optical waveguide which utilizes intermixing of InGaAs/InGaAsP multi quantum well separate confinement heterostructure. The waveguide was fabricated by reactive ion etching technique using $CH_4/H_2$ gas mixture, and the width and depth of the waveguide ware $5{\mu}m$ and $1.2{\mu}m$, respectively. The propagation loss of the waveguide was measured by Fabry-Perot interference phenomena using tunable laser. For the waveguide after $800^{\circ}C$, 30s heat treatment, the measured loss was 3.76dB/cm and 3.95dB/cm for TE and TM mode, respectively. This value is very small compared to other waveguide made by IFVD technique. Hence, this technique can applied to integration of waveguide and electronic devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.293-293
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• 2014

Over last decade InGaN alloy structures have become the one of the most promising materials among the numerous compound semiconductors for high efficiency light sources because of their direct band-gap and a wide spectral region (ultraviolet to infrared). The primary cause for the high quantum efficiency of the InGaN alloy in spite of high threading dislocation density caused by lattice misfit between GaN and sapphire substrate and severe built-in electric field of a few MV/cm due to the spontaneous and piezoelectric polarizations is generally known as the strong exciton localization trapped by lattice-parameter-scale In-N clusters in the random InGaN alloy. Nonetheless, violet-emitting (390 nm) conventional low-In-content InGaN/GaN multi-quantum wells (MQWs) show the degradation in internal quantum efficiency compared to blue-emitting (450 nm) MQWs owing higher In-content due to the less localization of carrier and the smaller band offset. We expected that an improvement of internal quantum efficiency in the violet region can be achieved by replacing the conventional low-In-content InGaN/GaN MQWs with ultra-thin, high-In-content (UTHI) InGaN/GaN MQWs because of better localization of carriers and smaller quantum-confined Stark effect (QCSE). We successfully obtain the UTHI InGaN/GaN MQWs grown via employing the GI technique by using the metal-organic chemical vapor deposition. In this work, 1 the optical and structural properties of the violet-light-emitting UTHI InGaN/GaN MQWs grown by employing the GI technique in comparison with conventional low-In-content InGaN/GaN MQWs were investigated. Stronger localization of carriers and smaller QCSE were observed in UTHI MQWs as a result of enlarged potential fluctuation and thinner QW thickness compared to those in conventional low-In-content MQWs. We hope that these strong carrier localization and reduced QCSE can turn the UTHI InGaN/GaN MQWs into an attractive candidate for high efficient violet emitter. Detailed structural and optical characteristics of UTHI InGaN/GaN MQWs compared to the conventional InGaN/GaN MQWs will be given.

• Nuclear Engineering and Technology
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• v.55 no.7
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• pp.2578-2590
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• 2023

In this work, a 24-month two-batch fuel management strategy for the APR1400 using LEU + has been investigated, where enrichments of 5.9 and 5.2 w/o are utilized in lieu of the conventional 4-5 w/o UO₂ fuel. In addition, an Accident Tolerant Fuel (ATF) clad based on the swaging technology is applied to APR1400 fuel assemblies. In this special ATF clad design, both outer and inner SS316 layers protect the conventional zircaloy clad. Erbia (Er₂O₃) is introduced as a burnable absorber with two-fold goals to lower the critical boron concentration in the long-cycle LEU + loaded core as well as to handle the LEU + fuel in the existing front-end fuel facilities without renewing the license. Two types of fuel assemblies with different loading of gadolinia (Gd₂O₃) are considered to control both the reactivity and the core radial power distribution. The erbia burnable absorber is uniformly admixed with UO₂ in all fuel pins except for the gadolinia-bearing ones. In this study, two core designs were devised with different erbia loading, and core performance and safety parameters were evaluated for each case in comparison with a core design without any burnable absorbers. The core analysis was done using the two-step method. First, cross-sections are generated by the SERPENT 2 Monte Carlo code, and the 3-D neutronic analysis is performed with an in-house multi-physics nodal code KANT.

• Korean Chemical Engineering Research
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• v.54 no.2
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• pp.274-277
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• 2016

Effects of interlayer insertion between multi-quantum well and electron blocking layer of green light emitting diode on diode performances were studied by device simulation. Dependence of Mg doping depth on characteristics of current-voltage, emitting wavelength, leakage current, and external quantum efficiency was investigated, and the optimum diode structure was presented. Device structures with interlayers doped in entire region and up to 30 nm showed remarkable reduced leakage current and effectively relieved efficiency droop which is one of the biggest challenges in green light emitting diode. Furthermore, the most improved characteristics in current-voltage and electroluminescence was obtained by the latter structure.

• Progress in Superconductivity
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• v.7 no.2
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• pp.109-113
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• 2006

The Arithmetic Logic Unit (ALU) is a core element of a computer processor that performs arithmetic and logic operations on the operands in computer instruction words. We have developed and tested an RSFQ multi-bit ALU constructed with half adder unit cells. To reduce the complexity of the ALU, We used half adder unit cells. The unit cells were constructed of one half adder and three de switches. The timing problem in the complex circuits has been a very important issue. We have calculated the delay time of all components in the circuit by using Josephson circuit simulation tools of XIC, $WRspice^{TM}$, and Julia. To make the circuit work faster, we used a forward clocking scheme. This required a careful design of timing between clock and data pulses in ALU. The designed ALU had limited operation functions of OR, AND, XOR, and ADD. It had a pipeline structure. The fabricated 1-bit, 2-bit, and 4-bit ALU circuits were tested at a few kilo-hertz clock frequency as well as a few tens giga-hertz clock frequency, respectively. For high-speed tests, we used an eye-diagram technique. Our 4-bit ALU operated correctly at up to 5 GHz clock frequency.