• 제목/요약/키워드: Multi-material interaction

검색결과 78건 처리시간 0.024초

NOX 가스 검출 특성을 이용한 MWCNT/ZnO 복합체 필름 가스 센서의 메커니즘 분석 (The Analysis of Mechanism for the Gas Sensor of MWCNT/ZnO Composites Film Using the NOX Gas Detection Characteristics)

  • 손주형;김현수;박용서;장경욱
    • 한국전기전자재료학회논문지
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    • 제31권3호
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    • pp.188-192
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    • 2018
  • In this study, we fabricated an $NO_X$ gas sensor using a composite film of multi-walled carbon nanotubes (MWCNT)/zinc oxide (ZnO). Carbon nanotubes (CNTs) show good electronic conductivity and chemical-stability, and zinc oxide (ZnO) is a wide band gap semiconductor with a large exciton binding energy. Gas sensors require characteristics such as high speed, sensitivity, and selectivity. The fabricated gas sensor was used to detect $NO_X$ gas at different $NO_X$ concentrations. The sensitivity of the gas sensor increased with increasing gas concentrations. Additionally, while changing the temperature inside the chamber containing the MWCNT/ZnO gas sensor, we obtained the sensitivity and normalized responses for detecting $NO_X$ gas in comparison to ZnO and MWCNT film gas sensors. From the experimental results, we confirmed that the gas sensor sensing mechanism was enhanced in the composite-film gas-sensor and that the electronic interaction between MWCNT and ZnO contributed to the improved sensor performance.

전자기 용접의 충돌 속도에 대한 코일 형상의 영향 (Effect of a Coil Shape on an Impulse Velocity of the Electromagnetic Welding)

  • 박현일;이광석;이진우;이영선;김대용
    • 소성∙가공
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    • 제28권3호
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    • pp.135-144
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    • 2019
  • Electromagnetic impulse welding (EMIW) is a type of solid state welding using the Lorentz force generated by interaction between the magnetic field of the coil and the current induced in the workpiece. Although many experimental studies have been investigated on the expansion and compression welding of tube using the EMIW process, studies on the EMIW process of lap joint between flat sheets are uncommon. Since the magnetic field enveloped inside the tube can be controlled with ease, the electromagnetic technique has been widely used for tube welding. Conversely, it is difficult to control the magnetic field in the flat sheet welding so as to obtain the required welding velocity. The current study analyzed the effects of coil shape on the impulse velocity for suitable flat one-turn coil for the EMIW of the flat sheets. The finite element (FE) multi-physics simulation involving magnetic and structural field of EMIW were conducted with the commercial software LS-DYNA to evaluate the several shape variables, viz., influence of various widths, thicknesses, gaps and standoff distances of the flat one-turn coil on the impulse velocity. To obtain maximum impulse velocity, the flat one-turn coil was designed based on the FE simulation results. The experiments were performed using an aluminum alloy 1050 sheets of 1.0mm thickness using the designed flat one-turn coil. Through the microscopic interfacial analysis of the welded specimens, the interfacial connectivity was observed to have no defects. In addition, the single lap joint tests were performed to evaluate the welding strength, and a fracture occurred in the base material. As a result, a flat one-turn coil was successfully designed to guarantee welding with bond strength equal to or greater than the base material strength.

복합 집속 카메라의 섬광체배열에서 다중산란에 의한 위치 불확실성 (Position Uncertainty due to Multi-scattering in the Scintillator Array of Dual Collimation Camera)

  • 이원호
    • 대한방사선기술학회지:방사선기술과학
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    • 제31권3호
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    • pp.287-292
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    • 2008
  • 방사선 반응에서의 위치정보는 방사선 선원의 영상을 재구성하는데 있어서 매우 중요한 기본정보이다. 이에 대부분의 위치 검출 기술을 이용하여 검출기안에서의 일어난 단일 반응의 위치정보를 알아낼 수 있다. 그러나 섬광체 안에서의 다중산란의 경우 각각의 산란위치를 개별적으로 측정할 수 없고 여러 산란위치의 평균만이 구해질 수 있어서 측정된 방사능의 위치정보에 불확실성이 존재하게 된다. 이 논문에서는 이러한 다중산란에 따른 위치 불확실성을 몬테카를로 시뮬레이션으로 계산하였다. 시뮬레이션 모델은 복합 집속 카메라에 사용된 $50{\times}50{\times}5mm\;LaCl_3$(Ce) 섬광체(pixel크기는 $2{\times}2{\times}5mm$)이다. 복합 집속 카메라는 광전효과와 컴프턴 산란 모두에서 정보를 얻으므로 방사선의 반응에서 부분에너지만 (검출기에) 검출되는 경우와 모든 에너지가 검출 되는 경우를 나누어 위치 불확실성을 계산하였다. 부분에너지만 검출되는 경우 (PED) 위치의 표준편차는 $1{\sim}2mm$ 미만으로 다중산란에 의한 불확실성이 크지 않다는 것을 알 수 있다. PED의 경우 다중산란의 영향이 크지 않으므로 이러한 다중산란은 컴프턴 카메라의 성능에 큰 영향을 미치지 않는다는 것을 알 수 있다. 그러나 모든 에너지가 검출되는 경우 (FED), 122keV입사방사선의 경우를 제외하면, 그 위치의 표준편차가 1차 검출기의 pixel크기에 2배에 달한다. 그러므로 복합 집속 카메라의 코드화된 마스크를 설계하는데 있어 재구성된 영상의 잡음을 방지하기 위해 다중산란에 의한 표준편차가 고려되어야 한다. 모든 입사 방사선에너지에 대하여 FED에 의한 위치 불확실성은 PED에 의한 것 보다 크며 PED 대 FED의 비는 입사방사선의 에너지가 증가함에 따라서 커진다. PED와 FED의 경우 모두 위치의 불확실성이 입사방사선의 에너지에 따라 달라졌다.

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Bayes의 복합 의사결정모델을 이용한 다중에코 자기공명영상의 context-dependent 분류 (Context-Dependent Classification of Multi-Echo MRI Using Bayes Compound Decision Model)

  • 전준철;권수일
    • Investigative Magnetic Resonance Imaging
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    • 제3권2호
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    • pp.179-187
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    • 1999
  • 목적 : 본 논문은 Bayes의 복합 의사결정모델을 이용한 효과적인 다중에코 자기공명영상의 분류방법을 소개한다. 동질성을 갖는 영역 혹은 경계선부위 등 영역을 명확히 분할하기 위하여 영상 내 국소 부위 이웃시스댐상의 주변정보(contextual information)를 이용한 분류 방법을 제시한다. 대상 및 방법 : 통계학적으로이질적 성분들로 구성된 영상을 대상으로 한 주변정보를 이용한 분류결과는 영상내의 국소적으로 정적인 영역들을이웃화소시스탬 내에서 정의되는 상호작용 인자의 메커니즘에 의해 분리함으로서 개선시킬 수 있다. 영상의 분류과정에서 분류결과의 정확도를 향상시키기 위하여 분류대상화소의 주변화소에 대한 분류패턴을 이용한다면 일반적으로 발생하는 분류의 모호성을 제거한다. 그러한 이유는 특정 화소와 인접한 주변의 데이터는 본질적으로 특정 화소와 상관관계를 내재하고 있으며, 만일 주변데이터의 특성을 파악할수 있다면, 대상화소의 성질을 결정하는데 도움을 얻을 수 있다. 본 논문에서는 분류 대상화소의 주변정보와 Bayes의 복합 의사결정모델을 이용한 context-dependent 분류 방법을 제시한다. 이 모델에서 주변 정보는 국소 부위 이웃시스댐으로부터 전이확률(tran­s sition probability)을 추출하여 화소간의 상관관계의 강도를 결정하는 상호인자 값으로 사용한다. 결과 : 본논문에서는 다중에코자기공명영상의 분류를 위하여 Bayes의 복합 의사결정모델을 이용한 분류방법을 제안하였다. 주변 데이터를 고려하지 않는 context-free 분류 방법에 비하여 특히 동질성을 강는 영역 혹은 경계선 부위 등에서의 분류결과가 우수하게 나타났으며, 이는 주변정보를이용한 결과이다. 결론 : 본 논문에서는클러스터링 분석과 복합 의사결정 Bayes 모델을 이용하여 다중에코 자기공명영상의 분류 결과를 향상시키기 위한 새로운 방법을 소개하였다.

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Fluorescence-labelling for analysis of protein in starch using asymmetrical flow field-flow fractionation (AF4)

  • Yoo, Yeongsuk;Choi, Jaeyeong;Zielke, Claudia;Nilsson, Lars;Lee, Seungho
    • 분석과학
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    • 제30권1호
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    • pp.1-9
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    • 2017
  • Starch is a mixture of amylose (AMY) and amylopectin (AMP) which are different in physical properties such as molar mass (M), rms radius ($R_g$) and hydrodynamic diameter ($d_H$). The rheological and functional properties of starch are influenced by various factors including the molecular size, molar mass distribution (MD) and the concentration ratio of AMY and AMP. It is also important to analyze proteinaceous material in starch as they affect the flavor and texture of food to which starch is added. In this study, asymmetrical flow field-flow fractionation (AF4) was employed for separation and quantitation of AMY and AMP in starches (Amaranth, potato, taros and quinoa). AF4 was coupled with a multi-angle light scattering (MALS) and a refractive index (RI) detector for determination of the absolute M, MD and molecular structure. It was found that AMP has the M and $R_g$ ranging $3.7{\times}10^7{\sim}6.5{\times}10^8g/mol$ and 84 ~ 250 nm, respectively. Also the existence of branch was confirmed in higher M. In addition, proteinaceous material in starch was analyzed by AF4 coupled with a fluorescence detector (FS) after fluorescence-labeling. AF4-FS with fluorescence-labelling showed a potential for investigation on existence of proteinaceous material and the interaction between proteinaceous material and polysaccharide in starch.

MM-ALE 유한요소 시뮬레이션을 이용한 수중 어뢰폭발에서의 최악파편의 종단속도 추정 (Estimation of the Terminal Velocity of the Worst-Case Fragment in an Underwater Torpedo Explosion Using an MM-ALE Finite Element Simulation)

  • 최병희;류창하
    • 화약ㆍ발파
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    • 제37권3호
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    • pp.13-24
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    • 2019
  • 본 논문은 명시적 유한요소 해석을 이용하여 군함이나 수상함 아래의 수중에서 어뢰가 폭발할 때의 파편들의 거동을 조사하기 위하여 작성되었다. 본 연구에서는 LS-DYNA에서 라그랑주-오일러 (ALE) 접근법이라 불리는 유체-구조물 상호작용(FSI) 기법을 적용하여 어뢰파편과 선체의 응답을 관찰하였다. 오일러 모델은 공기, 물, 폭약으로 구성되며, 라그랑주 모델은 파편과 선체로 이루어져 있다. 본 모델링의 핵심은 최악파편이 어뢰로부터 가까운 곳(4.5 m)에 위치한 선체에 파공을 일으킬 수 있는지 여부를 파악하는 데 있다. 시뮬레이션은 별도의 두 단계로 수행되었다. 첫 번째의 예비해석에서는 팽창하는 어뢰의 외피가 찢어지는 데 폭약에너지의 30%가 소모된다는 가정 하에 수중폭발 시의 파편속도에 대해 잘 알려져 있는 실험결과를 토대로 최악파편의 초기속도를 결정하였다. 두 번째의 총괄해석에서는 최악파편이 선체에 부딪치기 직전에 보일 것으로 예상되는 파편의 종단속도를 찾고자 하였다. 그 결과, 주어진 조건 하에서 최악파편의 초기속도는 매우 빠른 것으로 나타났다(400 및 1000 m/s). 하지만 충돌이 발생할 때의 파편과 선체 간의 속도차이는 불과 4 m/s 정도로 매우 작았다. 이 결과는 물에 의한 큰 항력의 영향도 있지만 선체에 부여한 비파괴 조건도 영향을 끼쳤을 것으로 보인다. 하지만 적어도 본 논문에서 가정한 해석조건 하에서는 최악파편의 느린 상대속도로 인하여 선체에 파공이 발생하기는 어려운 것으로 나타났다.

Statistical Qualitative Analysis on Chemical Mechanical Polishing Process and Equipment Characterization

  • Hong, Sang-Jeen;Hwang, Jong-Ha;Seo, Dong-Sun
    • Transactions on Electrical and Electronic Materials
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    • 제12권2호
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    • pp.56-59
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    • 2011
  • The characterization of the chemical mechanical polishing (CMP) process for undensified phophosilicate glass (PSG) film is reported using design of experiments (DOE). DOE has been used by experimenters to understand the relationship between the input variables and responses of interest in a simple and efficient way, and it typically is beneficial for determining the appropriatesize of experiments with multiple process variables and making statistical inferences for the responses of interest. The equipment controllable parameters used to operate the machine consist of the down force of the wafer carrier, pressure on the back side wafer, table and spindle speeds (SS), slurry flow (SF) rate, pad condition, etc. None of these are independent ofeach other and, thus, the interaction between the parameters also needs to be understoodfor improved process characterization in CMP. In this study, we selected the five controllable equipment parameters the most recommendedby process engineers, viz. the down force (DF), back pressure (BP), table speed (TS), SS, and SF, for the characterization of the CMP process with respect to the material removal rate and film uniformity in percentage terms. The polished material is undensified PSG which is widely used for the plananization of multi-layered metal interconnects. By statistical modeling and the analysis of the metrology data acquired from a series of $2^{5-1}$ fractional factorial designs with two center points, we showed that the DF, BP and TS have the greatest effect on both the removal rate and film uniformity, as expected. It is revealed that the film uniformity of the polished PSG film contains two and three-way interactions. Therefore, one can easily infer that process control based on a better understanding of the process is the key to success in current semiconductor manufacturing, in which the size of the wafer is approaching 300 mm and is scheduled to continuously increase up to 450 mm in or slightly after 2012.

Statistical Qualitative Analysis on Chemical Mechanical Polishing Process and Equipment Characterization

  • Hong, Sang-Jeen;Hwang, Jong-Ha;Seo, Dong-Sun
    • Transactions on Electrical and Electronic Materials
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    • 제12권3호
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    • pp.115-118
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    • 2011
  • Process characterization of the chemical mechanical polishing (CMP) process for undensified phosphosilicate glass (PSG) film is reported using design of experiments (DOE). DOE has been addressed to experimenters to understand the relationship between input variables and responses of interest in a simple and efficient way. It is typically beneficial for determining the adequate size of experiments with multiple process variables and making statistical inferences for the responses of interests. Equipment controllable parameters to operate the machine include the down force (DF) of the wafer carrier, pressure on the backside of the wafer, table and spindle speed (SS), slurry flow rate, and pad condition. None of them is independent; thus, the interaction between parameters also needs to be indicated to improve process characterization in CMP. In this paper, we have selected the five controllable equipment parameters, such as DF, back pressure (BP), table speed (TS), SS, and slurry flow (SF), most process engineers recommend to characterize the CMP process with respect to material removal rate (RR) and film uniformity as a percentage. The polished material is undensified PSG. PSG is widely used for the plananization in multi-layered metal interconnects. We identify the main effect of DF, BP, and TS on both RR and film uniformity, as expected, by the statistical modeling and analysis on the metrology data acquired from a series of $2^{5-1}$ fractional factorial design with two center points. This revealed the film uniformity of the polished PSG film contains two and three-way interactions. Therefore, one can easily infer that the process control based on better understanding of the process is the key to success in semiconductor manufacturing, typically when the wafer size reaches 300 mm and is continuously scheduled to expand up to 450 mm in or little after 2012.

금속 나노 파티클의 레이저 플라즈모닉 어닐링을 통한 메탈메쉬 전극 형성과 이를 활용한 유연 터치 센서 (Formation of Metal Mesh Electrodes via Laser Plasmonic Annealing of Metal Nanoparticles for Application in Flexible Touch Sensors)

  • 정성민;황윤식;우유미;조용준;김찬혁;안민기;서호석;양찬현;박귀일;박정환
    • 한국전기전자재료학회논문지
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    • 제37권2호
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    • pp.223-229
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    • 2024
  • Laser-induced plasmonic sintering of metal nanoparticles (NPs) holds significant promise as a technology for producing flexible conducting electrodes. This method offers immediate, straightforward, and scalable manufacturing approaches, eliminating the need for expensive facilities and intricate processes. Nevertheless, the metal NPs come at a high cost due to the intricate synthesis procedures required to ensure long-term reliability in terms of chemical stability and the prevention of NP aggregation. Herein, we induced the self-generation of metal nanoparticles from Ag organometallic ink, and fabricated highly conductive electrodes on flexible substrates through laser-assisted plasmonic annealing. To demonstrate the practicality of the fabricated flexible electrode, it was configured in a mesh pattern, realizing multi-touchable flexible touch screen panel.

Effect of Amine Functional Group on Removal Rate Selectivity between Copper and Tantalum-nitride Film in Chemical Mechanical Polishing

  • Cui, Hao;Hwang, Hee-Sub;Park, Jin-Hyung;Paik, Ungyu;Park, Jea-Gun
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.546-546
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    • 2008
  • Copper (Cu) Chemical mechanical polishing (CMP) has been an essential process for Cu wifing of DRAM and NAND flash memory beyond 45nm. Copper has been employed as ideal material for interconnect and metal line due to the low resistivity and high resistant to electro-migration. Damascene process is currently used in conjunction with CMP in the fabrication of multi-level copper interconnects for advanced logic and memory devices. Cu CMP involves removal of material by the combination of chemical and mechanical action. Chemicals in slurry aid in material removal by modifying the surface film while abrasion between the particles, pad, and the modified film facilitates mechanical removal. In our research, we emphasized on the role of chemical effect of slurry on Cu CMP, especially on the effect of amine functional group on removal rate selectivity between Cu and Tantalum-nitride (TaN) film. We investigated the two different kinds of complexing agent both with amine functional group. On the one hand, Polyacrylamide as a polymer affected the stability of abrasive, viscosity of slurry and the corrosion current of copper film especially at high concentration. At higher concentration, the aggregation of abrasive particles was suppressed by the steric effect of PAM, thus showed higher fraction of small particle distribution. It also showed a fluctuation behavior of the viscosity of slurry at high shear rate due to transformation of polymer chain. Also, because of forming thick passivation layer on the surface of Cu film, the diffusion of oxidant to the Cu surface was inhibited; therefore, the corrosion current with 0.7wt% PAM was smaller than that without PAM. the polishing rate of Cu film slightly increased up to 0.3wt%, then decreased with increasing of PAM concentration. On the contrary, the polishing rate of TaN film was strongly suppressed and saturated with increasing of PAM concentration at 0.3wt%. We also studied the electrostatic interaction between abrasive particle and Cu/TaN film with different PAM concentration. On the other hand, amino-methyl-propanol (AMP) as a single molecule does not affect the stability, rheological and corrosion behavior of the slurry as the polymer PAM. The polishing behavior of TaN film and selectivity with AMP appeared the similar trend to the slurry with PAM. The polishing behavior of Cu film with AMP, however, was quite different with that of PAM. We assume this difference was originated from different compactness of surface passivation layer on the Cu film under the same concentration due to the different molecular weight of PAM and AMP.

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