• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 추계학술대회 논문집
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• pp.153-156
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• 2003

The multi-layer oxide buffer layer for the coated conductor was deposited on biaxially textured Ni substrates using pulsed laser deposition. Oxygen partial pressure, 4％$H_2$/Ar partial pressure, and deposition temperature were deposition variables investigated to find the optimum deposition conditions. $Y_2$O$_3$seed layer was deposited epitaxially on metal substrate. The full buffer architecture of $Y_2$O$_3$/YSZ/CeO$_2$was successfully prepared on metal substrate.

• 한국전기전자재료학회논문지
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• 제28권1호
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• pp.7-11
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• 2015

In this study, $Si_3N_4$/SnZnO/AZO/Ag/Ti/ITO multi-layer film were prepared on glass substrate by DC/RF magnetron sputtering method. To prevent interfacial reaction between Ag and ITO layer, Ti buffer layer was inserted. Optical properties and sheet resistance were studied depending on laminating times of each multi-layered film especially in visible ray. The simulation program, EMP (essential macleod program), was adopted and compared with experimental data to expect the experimental result. It was found out that the transmittance of the first stacked $Si_3N_4$/SnZnO/AZO/Ag/Ti/ITO multi-layer film was more than 90%. However, with increasing stacking times, the optical properties of $Si_3N_4$/SnZnO/AZO/Ag/Ti/ITO multi-layer film get worse. Consequently, Ti layer is good for oxidation barrier, but too many uses of this layer may have an adverse effect to optical properties of TCO film.

• 한국진공학회지
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• 제12권S1호
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• pp.63-66
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• 2003

It is experimentally shown that a $TiO_2$ film on Si(111) substrate was prepared by using the technique of D.C. reaction sputter deposition with $Ar^{+}$ ion beam bombardment, and a layer-like structure was observed from the depth profile of the interface between $TiO_2$ film and Si substrate with Scanning Electron Microscopy and Electron Probe. It was also surprisingly discovered that Ti atoms could be detected at about 9 $\mu$m depth. The $TiO_2$-Si interface bombarded by $Ar^{+}$ ion beams revealed multi-layer structures, a mechanism might be caused by defect diffusion, impurity and matrix relocation. Multi-relocations of impurity and matrix atoms were as a result of profile broadening of the $TiO_2$-Si interface, and the spread due to matrix relocation in this system is shown to exceed much more the spread due to impurity relocation.

• 센서학회지
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• 제19권6호
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• pp.475-482
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• 2010

Rogowski coil which detects magnetic flux on current changes. It is used for digital integration with watt-hour meter's current sensor, because, Rogowski coil has non-cored or non-magnetic core structure, so that, it cannot be saturated magnetically. This is a study for inventing accurate electric current sensors that have been applied on multi-layer ceramic substrate. We have confirmed its properties from each different layer's materials and pattern sizes by MWS 3D Electromagnetic field analysis program. And, after sensor manufacturing on multi-layer ceramic substrate, we confirmed its sensing quality is reliable as accurate electric current sensor for watt-hour meter.

• 한국전기전자재료학회논문지
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• 제17권4호
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• pp.443-447
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• 2004

In this study, we investigated the necessity of encapsulation layer to maximize flexibility of brittle indium-tin-oxide (ITO) on polymer substrates. And, Young's modulus (E) of encapsulation layer han a significant effect on external bending stress and the coefficient of thermal expansion (CTE) of that han a significant effect on internal thermal stress. To compare the magnitude of total mechanical stress including both bending stress and thermal stress, the mechanical stress of triple-layer structure (substrate / ITO / encapsulation layer or substrate / buffer layer / ITO) can be quantified and numerically analyzed through the farthest cracked island position. As a result, it should be noted that multi-layer structures with more elastic encapsulation material have small mechanical stress compared to that of buffer and encapsulation structure of large Young's modulus material when they were externally bent.

• 반도체디스플레이기술학회지
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• 제16권2호
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• pp.27-31
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• 2017

AZO/Ag/AZO multi-layer films deposited on glass substrate by RF magnetron sputtering and thermal evaporator have a much better electrical properties than Al-doped ZnO thin films. The multi-layer structure consisted of three layers, AZO/Ag/AZO, the electrical and optical properties of AZO/Ag/AZO were changed mainly by thickness of Ag layers. The optimum thickness of Ag layers was determined to be $90{\AA}$ for high optical transmittance and good electrical conductivity. The Ag layers thickness $90{\AA}$ is an optical transmittance greater than 80% of visible light and the obtained multilayer thin film with the low resistivity of $8.05{\times}10-3{\Omega}cm$ and the low sheet resistance $5.331{\Omega}/sq$. Applying to TCO and Solar electrode will improve efficiency.

• 한국전기전자재료학회논문지
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• 제17권12호
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• pp.1356-1361
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• 2004

High temperature superconducting coated conductor has a structure of ///. The buffer layer consists of multi-layer, this study reports the deposition method and optimal deposition conditions of YSZ(Yttria-stabilized zirconia) layer which plays a important part in preventing the elements of substrate from diffusing into the superconducting layer. YSZ layer was deposited by DC reactive sputtering technique using water vapor for oxidizing deposited elements on substrate. To investigate optimal thickness of YSZ film, four YSZ/CeO$_2$/Ni samples with different YSZ thickness(130 nm, 260 nm, 390 nm, and 650 nm) were prepared. The SEM image showed that the surface of YSZ layer was getting to be rougher as YSZ layer was getting thicker and the growth mode of YSZ layer was columnar grain growth. After CeO$_2$ layer was deposited with the same thickness of 18.3 nm on each four samples, YBCO layer was deposited by PLD method with the thickness of 300 nm. The critical currents of four samples were 0, 6 A, 7.5 A, and 5 A respectively. This shows that as YSZ layer is getting thicker, YSZ layer plays a good role as a diffusion barrier but the surface of YSZ layer is getting rougher.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.634-634
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• 2013

Transfer molding methods have a problem that weak adhesion between nanostructures and substrates. It is important to make various nano scale applications, also the stability of nanostructure on substrate is related with device performance. We studied an effect of poly 4-vinylphenol (PVP) as the polymeric adhesion layer between organic nanowires and a Si substrate when the nanowires are transferred by liquid-bridge-mediated nanotransfer molding method (LB-nTM). Their structural stability was examined by optical microscopy, scanning electron microscopy as multiple transfer molding and washing process. Field-effect transistors were fabricated with organic semiconductor nanowires on a polymeric adhesion layer and their electrical properties showed no significant difference as the one without the adhesion layer. As a result, adhesion layer can be used in the washing process and making multi-layer nano-scale patterns.

• 한국전자파학회논문지
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• 제19권7호
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• pp.778-784
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• 2008

본 논문에서는 다층 구조를 이 용하여 다중 대 역(GSM, DCS, PCS, WCDMA, 2.3 GHz WiMAX)에서 동작하며, 다층 구조이므로 공간 재활용이 가능하여 안테나 크기를 효율적으로 줄일 수 있는 칩 안테나를 제안하였다. 또한, 중간층에 air-gap을 삽입하여 병렬 캐피시턴스 성분을 감소시켜 넓은 대역폭을 얻을 수 있었다. 제안한 안테나는 RO4003 유전체(${\varepsilon}_r=3.4$)를 사용한 다층 구조의 PIFA이고, 안테나 부피는 $22{\times}5.5{\times}4.0\;mm^3$이다. 측정 결과, 안테나 효율 45 % 이상인 대역폭은 low-band에서 80 MHz($880{\sim}960\;MHz$)이며, high-band에서 690 MHz($1,710{\sim}2,400\;MHz$)을 보였으며, 안테나의 고차 모드와 최상위 층의 공진으로 인해 high-band에서 넓은 대역폭을 갖게 되는 것으로 사료된다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 하계종합학술대회논문집
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• pp.871-874
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• 1998

A new transmission line parameter extraction method of iC interconnects on silicon substrate is presented. To extract the acurate parameters, the silicon substrate effects were taken into account. Since the electromagnetic fields under the silicon substrate are propagated with slow wave mode, effective dielectric constant and different ground plane with the multi-layer dielectric structures were employed for inductance and capacitance matrix determination. Then accurate signal transients simulation were performed with HSPICE by using the parameters. It was shown that the simulation resutls has an excellent agreement with TDR/TDT measurements.