• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.06a
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• pp.441-444
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• 2007

In this paper, the resonance characteristics of ZnO-based film bulk acoustic resonator (FBAR) devices with high-quality multi-layer reflectors are proposed. The ultrathin Cr film $(300\;\AA-thick)$ between $SiO_2$ film and W film is formed by a sputtering-deposition in order to enhance the adherence at their interfaces. The resonance frequency was observed to vary with the number of the reflectors. This seems to be attributed to the change in the effective thickness of the ZnO film. Also, increasing the number of layers has led to a significant improvement of the series/parallel quality factor.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1189-1192
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• 1993

Organic thin films were fabricated an using interelectrode capacitively coupled type plasma polymerizaion apparatus, and their optical properties were investigated. A deposition rate of styrene thin films is linearly increased, but one or vinyl-pyridine thin films is nonlinearly increased with increasing of polymerization time, pressure and monomer flow rate. The transmittance of single layer thin films is constant, but that of multi-layer appeared irregular peak with increasing of the number of layers. And then the refractive index of organic thin films is various from 1.55 to 1.65 with wavelength, the extinction coefficient indicated $10^{-3}$.

• Journal of the Semiconductor & Display Technology
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• v.22 no.4
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• pp.53-58
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• 2023

The storage capacity of 3D-NAND flash memory has been enhanced by the multi-layer dielectrics. The deposition process has become more challenging due to the tight process margin and the demand for accurate process control. To reduce product costs and ensure successful processes, process diagnosis techniques incorporating artificial intelligence (AI) have been adopted in semiconductor manufacturing. Recently there is a growing interest in process diagnosis, and numerous studies have been conducted in this field. For higher model accuracy, various process and sensor data are required, such as optical emission spectroscopy (OES), quadrupole mass spectrometer (QMS), and equipment control state. Among them, OES is usually used for plasma diagnostic. However, OES data can be distorted by viewport contamination, leading to misunderstandings in plasma diagnosis. This issue is particularly emphasized in multi-dielectric deposition processes, such as oxide and nitride (ON) stack. Thus, it is crucial to understand the potential misunderstandings related to OES data distortion due to viewport contamination. This paper explores the potential for misunderstanding OES data due to data distortion in the ON stack process. It suggests the possibility of excessively evaluating process drift through comparisons with a QMS. This understanding can be utilized to develop diagnostic models and identify the effects of viewport contamination in ON stack processes.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.33-55
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• 2016

PVD(Physical Vapour Deposition)코팅은 70년대 미국의 Multi-arc이란 기업에 의해 질화물계나 탄화물계 피막 증착이 가능한 아크이온플레팅(Arc Ion Plating) 기술이 산업에 소개되어, 주로 내마모나 내구성을 요구하는 금형, 절삭공구, 산업용 부품 분야 등에 적용되면서 꾸준한 성장세를 거듭해 왔다. 최근 들어 PVD기술은 그 수요의 급증과 더불어 보다 진화된 형태의 코팅장치 및 코팅피막들이 산업에 소개 되고 있다. 먼저 절삭가공분야에는 new composition, nano composite, multi-element composition, multi-layer, SML(Self Modification Layer)등의 코팅피막들이 단독 또는 조합된 형태로 개발되어 철계 소재를 대상으로 고경도 소재의 고속가공, 저경도~중경도 소재의 중속~고속 광범위영역에서 동시 절삭을 가능케 하였고, 비철.비금속 소재 절삭용으로 종전의 가스방식의 DLC(a-C:H)코팅을 훨씬 능가하는 ta-C Plus(Ultra super DLC) 코팅이 개발되어 고 Si함량의 Al-Si계 합금, Cu-W계, 고 섬유 CFRP, CFRM 및 반소결 상태의 세라믹 소재들을 황삭에서 정삭까지 단일 공정으로 절삭이 가능한 고성능 공구들이 개발보급되고 있다. 금속 성형분야에는 고장력 강판을 냉간에서 성형 가능한 Lubricative multi-layer coating, 열간 또는 고온에서 성형이 가능한 functional multi layer과 이형성이 더한층 개선된 dimpled(or embossed) functional multi layer 코팅들이 개발되어 산업현장에 빠르게 확산되고 있다. PVD 코팅의 또 다른 주요 적용분야로 의료분야를 들 수 있는데, 이는 코팅의 대다수가 고경도의 생체친화적인 특성을 가진데 착안되었으며, 흔히 현대성 질환이라 일컫는 과민성 체질, 과체중 및 허약체질 환자의 증가와 각종 재해 및 사고의 증가 및 인간 수명 증가에 따른 인공적인 시술의 요구증가에 편승하여 이 분야의 시장 또한 가파르게 성장하고 있다. 또한 대량으로 양산 적용단계에 접어든 자동차 핵심부품들을 비롯해서 각종 산업용, 방산용 기계 부품에도 성능 향상, 내구성 향상, 환경친화성 등 다양한 목적으로 확대 적용되고 있는 사례들을 본 발표를 통해 간략하게나마 소개하고자 한다.

• Environmental Sciences Bulletin of The Korean Environmental Sciences Society
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• v.4 no.1
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• pp.31-42
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• 2000

The dry deposition velocities and fluxes of air pollutants such as SO2(g), O3(g), HNO3(g), sub-micron particulates, NO3(s), and SO42-(s) were estimated according to local meteorological elements in the atmospheric boundary layer. The model used for these calculations was the multiple layer resistance model developed by Hicks et al.1). The meteorological data were recorded on an hourly basis from July, 1990 to June, 1991 at the Austin Cary forest site, near Gainesville FL. Weekly integrated samples of ambient dry deposition species were collected at the site using triple-fiter packs. For the study period, the annual average dry deposition velocities at this site were estimated as 0.87$\pm$0.07 cm/s for SO2(g), 0.65$\pm$0.11 cm/s for O3(g), 1.20$\pm$0.14cm/s for HNO3(g), 0.0045$\pm$0.0006 cm/s for sub-micron particulates, and 0.089$\pm$0.014 cm/s for NO3-(s) and SO42-(s). The trends observed in the daily mean deposition velocities were largely seasonal, indicated by larger deposition velocities for the summer season and smaller deposition velocities for the winter season. The monthly and weekly averaged values for the deposition velocities did not show large differences over the year yet did show a tendency of increased deposition velocities in the summer and decreased values in the winter. The annual mean concentrations of the air pollutants obtained by the triple filter pack every 7 days were 3.63$\pm$1.92 $\mu\textrm{g}$/m3 for SO42-, 2.00$\pm$1.22 $\mu\textrm{g}$/m-3 for SO2, 1.30$\pm$0.59 $\mu\textrm{g}$/m-3 for HNO3, and 0.704$\pm$0.419 $\mu\textrm{g}$/m3 for NO3-, respectively. The air pollutant with the largest deposition flux was SO2 followed by HNO3, SO42-(S), and NO3-(S) in order of their magnitude. The sulfur dioxide and NO3- deposition fluxes were higher in the winter than in the summer, and the nitric acid and sulfate deposition fluxes were high during the spring and summer.

• Transactions on Electrical and Electronic Materials
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• v.5 no.5
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• pp.173-179
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• 2004

The influence of heavily Si impurity doping in the GaN barrier of InGaN/GaN multi-quantum well structures of blue light emitting diodes were investigated by growing samples in metal-organic chemical vapor deposition. The delta-doped sample was compared to the sample with the undoped barrier. The delta-doped sample shows the tunneling behavior and forms the energy level of 0.32 eV for tunneling and the photoemission of the 450-nm band. The photo-luminescence shows the blue-shifted broad band of the radiative transition due to the inclusion of Si delta-doped layer indicating that the delta doping effect acts to form the higher energy level than that of quantum well. The dislocation may provide the carrier tunneling channel and plays as a source of acceptor. During the tunneling of hot carrier, there was no light emission.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.27-29
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• 2005

ZnO and phosphorus doped ZnO thin films (ZnO:P) are deposited by pulsed laser deposition grown on (001) $Al_{2}O_{3}$. ZnO/ZnO:P/ZnO/$Al_{2}O_{3}$ (multi-layer) structure was used for phosphorus doped ZnO fabrication. This multi-layer structure thin film was annealed at $400^{\circ}C$ for 40 min. The electron concentration of that was changed from $10^{19}$ to $10^{16}/cm^{-3}$ after annealing. ZnO thin films with encapsulated structure showed the enhanced structural and optical properties than phosphorus doped ZnO without encapsulated layer. In this study, encapsulated ZnO structure was suggested to enhance electrical, structural and optical properties of phosphorus doped ZnO thin film and it was identified that encapsulated structure could be used to fabricate high quality phosphorus doped ZnO thin film.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.63-66
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• 2003

It is experimentally shown that a $TiO_2$ film on Si(111) substrate was prepared by using the technique of D.C. reaction sputter deposition with $Ar^{+}$ ion beam bombardment, and a layer-like structure was observed from the depth profile of the interface between $TiO_2$ film and Si substrate with Scanning Electron Microscopy and Electron Probe. It was also surprisingly discovered that Ti atoms could be detected at about 9 $\mu$m depth. The $TiO_2$-Si interface bombarded by $Ar^{+}$ ion beams revealed multi-layer structures, a mechanism might be caused by defect diffusion, impurity and matrix relocation. Multi-relocations of impurity and matrix atoms were as a result of profile broadening of the $TiO_2$-Si interface, and the spread due to matrix relocation in this system is shown to exceed much more the spread due to impurity relocation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1356-1361
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• 2004

High temperature superconducting coated conductor has a structure of ///. The buffer layer consists of multi-layer, this study reports the deposition method and optimal deposition conditions of YSZ(Yttria-stabilized zirconia) layer which plays a important part in preventing the elements of substrate from diffusing into the superconducting layer. YSZ layer was deposited by DC reactive sputtering technique using water vapor for oxidizing deposited elements on substrate. To investigate optimal thickness of YSZ film, four YSZ/CeO$_2$/Ni samples with different YSZ thickness(130 nm, 260 nm, 390 nm, and 650 nm) were prepared. The SEM image showed that the surface of YSZ layer was getting to be rougher as YSZ layer was getting thicker and the growth mode of YSZ layer was columnar grain growth. After CeO$_2$ layer was deposited with the same thickness of 18.3 nm on each four samples, YBCO layer was deposited by PLD method with the thickness of 300 nm. The critical currents of four samples were 0, 6 A, 7.5 A, and 5 A respectively. This shows that as YSZ layer is getting thicker, YSZ layer plays a good role as a diffusion barrier but the surface of YSZ layer is getting rougher.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.392-396
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• 1999

Superconducting YBa$_2Cu_3O_{7-{\delta}}$(YBCO) thin films were grown on Hastelloy(Ni-Cr-Mo alloys) with CeO$_2$ buffer layer in-situ by pulsed laser deposition in a multi-target processing chamber. To apply superconducting property on power transmission line, we have deposited YBCO thin film on flexible metallic substrate. However, it is difficult to grow the YBCO films on flexible metallic substrates due to both interdiffusion problem between metallic substrate and superconducting overlayers and non-crystallization of YBCO on amorphous substrate. It is necessary to use a buffer layer to overcome the difficulties. We have chosen CeO$_2$ as a buffer layer which has cubic structure of 5.41 ${\AA}$ lattice parameter and only 0.2% of lattice mismatch with 3.82 ${\AA}$ of a-axis lattice parameter of YBCO on [110] direction of CeO$_2$ In order to enhance the crystallization of YBCO films on metallic substrates, we deposited CeO$_2$ buffer layers with varying temperature and 02 pressure. By XRD, it is observed that dominated film orientation is strongly depending on the deposition temperature of CeO$_2$ layer. The dominated orientation of CeO$_2$ buffer layer is changed from (200) to(111) by increasing the deposition temperature and this transition affects the crystallization of YBCO superconducting film on CeO$_2$ buffered Hastelloy.